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The effect of Mn substitution on the electrochemical and magnetic properties of LaCrO3 nanofibers

Ceramics International 2025年

作者： Song, Chao Su, Wang Luo, Hanqiong Wang, Yin Hai, Wenfeng Wu, Tong Hu, Quanli Liu, Jinghai Inner Mongolia Key Lab of Solid State Chemistry for Battery Inner Mongolia Engineering Research Center of Lithium-Sulfur Battery Energy Storage College of Chemistry and Materials Science Inner Mongolia Minzu University Tongliao 028-000 China

The LaCr1-xMnxO3 (x = 0.1, 0.3, 0.5, 0.7, and 0.9) nanofibers were prepared by a simple electrospinning and annealing approach. These samples have been characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy to obtain their structure, morphology, composition, and elemental oxidation state. X-ray diffraction patterns show the crystal structure transition from Pnma orthorhombic to R 3‾ c rhombohedral structure with the increment of Mn proportion. X-ray photoelectron spectroscopy studies prove the existence of La³⁺, Cr³⁺, Cr⁴⁺, Cr⁶⁺, Mn³⁺, and Mn⁴⁺ species in the fabricated materials. The effects of Mn substitution in LaCrO3 on the electrochemical and magnetic properties were investigated. LaCr0.3Mn0.7O3 nanofibers possessed superior electrochemical performance to the other LaCr1-xMnxO3 nanofibers. The introduction of Mn into LaCrO3 weakened the antiferromagnetic interaction of Cr³⁺-O-Cr³⁺ and motivated the ferromagnetic double exchange interaction of Cr³⁺-O-Mn³⁺ and Mn³⁺-O-Mn⁴⁺. Density functional theory simulations were carried out to further elucidate the electronic properties of LaCr1-xMnxO3 nanofibers. LaCr0.9Mn0.1O3 NFs possess semiconducting nature in spin-down states and metallic nature in spin-up channels. The absence of a Fermi level gap was observed in LaCr0.7Mn0.3O3 NFs, LaCr0.5Mn0.5O3 NFs, LaCr0.3Mn0.7O3 NFs, and LaCr0.1Mn0.9O3 NFs. This study manifests that the Mn substitution in LaCrO3 NFs is a very useful and practical a

关键词： Magnetic property Nanofiber Perovskite Substitution Supercapacitors

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Intercalation and hybrid heterostructure integration of two-dimensional atomic crystals with functional organic semiconductor molecules

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Nano research 2020年第11期13卷 2917-2924页

作者： Wen He Han Zang Songhua Cai Zhangyan Mu Cheng Liu Mengning Ding Peng Wang Xinran Wang Key Laboratory of Mesoscopic Chemistry School of Chemistry and Chemical EngineeringNanjing UniversityNanjing210093China National Laboratory of Solid State Microstructures Nanjing UniversityNanjing210093China School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures Nanjing UniversityNanjing210093China Jiangsu Key Laboratory of Artificial Functional Materials College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093China Department of Applied Physics The Hong Kong Polytechnic UniversityHung Hom999077KowloonHong KongChina Research Center for Environmental Nanotechnology(ReCENT) Nanjing UniversityNanjing210023China

Van der Waals(vdW)integration affords semiconductor heterostructures without constrains of lattice matching and opens up a new realm of functional devices by design.A particularly interesting approach is the electrochemical intercalation of two-dimensional(2D)atomic crystal and formation of superlattices,which can provide scalable production of novel vdW ***,this approach has been limited to the use of organic cations with non-functional aliphatic chains,therefore failed to take the advantage of the vast potentials in molecular functionalities(electronic,photonic,magnetic,etc.).Here we report the integration of 2D crystal(MoS_(2),WS_(2),highly oriented pyrolytic graphite(HOPG),WSe_(2) as model systems)with electrochemically inert organic molecules that possess semiconducting characteristics(including perylene-3,4,9,10-tetracarboxylic dianhydride(PTCDA),pentacene and fullerene),through on-chip electrochemical *** unprecedented long-range spatial feature of intercalation has been achieved,which allowed facile assembly of a vertical MoS_(2)-PTCDA-Si *** intercalated heterostructure shows significant modulation of the lateral transport,and leads to a molecular tunneling characteristic at the vertical *** general intercalation of charge neutral and functional molecules defines a versatile platform of inorganic/organic hybrid vdW heterostructures with significantly extended molecular functional building blocks,holding great promise in future design of nano/quantum devices.

关键词： transition metal dichalcogenide electrochemical intercalation perylene-3,4,9,10-tetracarboxylic dianhydride(PTCDA) organic semiconductor inorganic/organic heterostructure

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LHAASO-KM2A detector simulation using Geant4

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Radiation Detection Technology and Methods 2024年第3期8卷 1437-1447页

作者： Zhen Cao F.Aharonian Q.An Axikegu Y.X.Bai Y.W.Bao D.Bastieri X.J.Bi Y.J.Bi J.T.Cai Q.Cao W.Y.Cao Zhe Cao J.Chang J.F.Chang A.M.Chen E.S.Chen Liang Chen Lin Chen Long Chen M.J.Chen M.L.Chen Q.H.Chen S.H.Chen S.Z.Chen T.L.Chen Y.Chen N.Cheng Y.D.Cheng M.Y.Cui S.W.Cui X.H.Cui Y.D.Cui B.Z.Dai H.L.Dai Z.G.Dai Danzengluobu X.Q.Dong K.K.Duan J.H.Fan Y.Z.Fan J.Fang K.Fang C.F.Feng L.Feng S.H.Feng X.T.Feng Y.L.Feng S.Gabici B.Gao C.D.Gao L.Q.Gao Q.Gao W.Gao W.K.Gao M.M.Ge L.S.Geng G.Giacinti G.H.Gong Q.B.Gou M.H.Gu F.L.Guo X.L.Guo Y.Q.Guo Y.Y.Guo Y.A.Han H.H.He H.N.He J.Y.He X.B.He Y.He Y.K.Hor B.W.Hou C.Hou X.Hou H.B.Hu Q.Hu S.C.Hu D.H.Huang T.Q.Huang W.J.Huang X.T.Huang X.Y.Huang Y.Huang Z.C.Huang X.L.Ji H.Y.Jia K.Jia K.Jiang X.W.Jiang Z.J.Jiang M.Jin M.M.Kang T.Ke D.Kuleshov K.Kurinov B.B.Li Cheng Li Cong Li D.Li F.Li H.B.Li H.C.Li H.Y.Li J.Li Jian Li Jie Li K.Li W.L.Li W.L.Li X.R.Li Xin Li Y.Z.Li Zhe Li Zhuo Li E.W.Liang Y.F.Liang S.J.Lin B.Liu C.Liu D.Liu H.Liu H.D.Liu J.Liu J.L.Liu J.Y.Liu M.Y.Liu R.Y.Liu S.M.Liu W.Liu Y.Liu Y.N.Liu R.Lu Q.Luo H.K.Lv B.Q.Ma L.L.Ma X.H.Ma J.R.Mao Z.Min W.Mitthumsiri H.J.Mu Y.C.Nan A.Neronov Z.W.Ou B.Y.Pang P.Pattarakijwanich Z.Y.Pei M.Y.Qi Y.Q.Qi B.Q.Qiao J.J.Qin D.Ruffolo A.Sáiz D.Semikoz C.Y.Shao L.Shao O.Shchegolev X.D.Sheng F.W.Shu H.C.Song Yu.V.Stenkin V.Stepanov Y.Su Q.N.Sun X.N.Sun Z.B.Sun P.H.T.Tam Q.W.Tang Z.B.Tang W.W.Tian C.Wang C.B.Wang G.W.Wang H.G.Wang H.H.Wang J.C.Wang K.Wang L.P.Wang L.Y.Wang P.H.Wang R.Wang W.Wang X.G.Wang X.Y.Wang Y.Wang Y.D.Wang Y.J.Wang Z.H.Wang Z.X.Wang Zhen Wang Zheng Wang D.M.Wei J.J.Wei Y.J.Wei T.Wen C.Y.Wu H.R.Wu S.Wu X.F.Wu Y.S.Wu S.Q.Xi J.Xia J.J.Xia G.M.Xiang D.X.Xiao G.Xiao G.G.Xin Y.L.Xin Y.Xing Z.Xiong D.L.Xu R.F.Xu R.X.Xu W.L.Xu L.Xue D.H.Yan J.Z.Yan T.Yan C.W.Yang F.Yang F.F.Yang H.W.Yang J.Y.Yang L.L.Yang M.J.Yang R.Z.Yang S.B.Yang Y.H.Yao Z.G.Yao Y.M.Ye L.Q.Yin N.Yin X.H.You Z.Y.You Y.H.Yu Q.Yuan H.Yue H.D.Zeng T.X.Zeng W.Zeng M.Zha B.B.Zhang F.Zhang H.M.Zhang H.Y.Zhang J.L.Zhang L.X.Zhang Li Zhang P.F.Zhang P.P.Zhang R.Zhang S.B.Zh Key Laboratory of Particle Astrophysics&Experimental Physics Division&Computing Center Institute of High Energy PhysicsChinese Academy of SciencesBeijing100049China University of Chinese Academy of Sciences Beijing100049China TIANFU Cosmic Ray Research Center ChengduSichuanChina Dublin Institute for Advanced Studies 31 Fitzwilliam Place2 DublinIreland Max-Planck-Institute for Nuclear Physics 69029Heidelberg103980Germany State Key Laboratory of Particle Detection and Electronics BeijingChina University of Science and Technology of China Hefei230026AnhuiChina School of Physical Science and Technology&School of Information Science and Technology Southwest Jiaotong UniversityChengdu610031SichuanChina School of Astronomy and Space Science Nanjing UniversityNanjing210023JiangsuChina Center for Astrophysics Guangzhou UniversityGuangzhou510006GuangdongChina Hebei Normal University Shijiazhuang050024HebeiChina Key Laboratory of Dark Matter and Space Astronomy&Key Laboratory of Radio Astronomy Purple Mountain ObservatoryChinese Academy of SciencesNanjing 210023JiangsuChina Tsung-Dao Lee Institute&School of Physics and Astronomy Shanghai Jiao Tong UniversityShanghai 200240China Key Laboratory for Research in Galaxies and Cosmology Shanghai Astronomical ObservatoryChinese Academy of SciencesShanghai 200030China Key Laboratory of Cosmic Rays(Tibet University) Ministry of EducationLhasa 850000TibetChina National Astronomical Observatories Chinese Academy of SciencesBeijing 100101China School of Physics and Astronomy(Zhuhai)&School of Physics(Guangzhou)&Sino-French Institute of Nuclear Engineering and Technology(Zhuhai) Sun Yat-sen UniversityGuangzhouZhuhai 510275519000GuangdongChina School of Physics and Astronomy Yunnan UniversityKunming 650091YunnanChina Institute of Frontier and Interdisciplinary Science Shandong UniversityQingdao 266237ShandongChina APC UniversitéParis CitéCNRS/IN2P3CEA/IRFUObservatoire de ParisParis 11975205France Department of Engineering Phys

KM2A is one of the main sub-arrays of LHAASO,working on gamma ray astronomy and cosmic ray physics at energies above 10 *** simulation is the important foundation for estimating detector performance and data *** is a big challenge to simulate the KM2A detector in the framework of Geant4 due to the need to track numerous photons from a large number of detector units(>6000)with large altitude difference(30)and huge coverage(1.3).In this paper,the design of the KM2A simulation code G4KM2A based on Geant4 is *** process of G4KM2A is optimized mainly in memory consumption to avoid memory *** simplifications are used to significantly speed up the execution of *** running time is reduced by at least 30 times compared to full detector *** particle distributions and the core/angle resolution comparison between simulation and experimental data of the full KM2A array are also presented,which show good agreement.

关键词： LHAASO KM2A Simulation GEANT4

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Impact of the ground-state 4f symmetry for anisotropic cf hybridization in the heavy-fermion superconductor CeNi2Ge2

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Physical Review B 2023年第16期108卷 165121-165121页

作者： H. Fujiwara Y. Nakatani H. Aratani Y. Kanai-Nakata K. Yamagami S. Hamamoto T. Kiss A. Yamasaki A. Higashiya S. Imada A. Tanaka K. Tamasaku M. Yabashi T. Ishikawa A. Yasui H. Yamagami J. Miyawaki A. Miyake T. Ebihara Y. Saitoh A. Sekiyama Division of Materials Physics Graduate School of Engineering Science Osaka University Toyonaka Osaka 560-8531 Japan RIKEN SPring-8 Center Sayo Hyogo 679-5148 Japan Spintronics Research Network Division Institute for Open and Transdisciplinary Research Initiatives Osaka University Yamadaoka 2-1 Suita Osaka 565-0871 Japan Department of Physical Sciences Ritsumeikan University Kusatsu Shiga 525-8577 Japan Faculty of Science and Engineering Konan University Kobe 658-8501 Japan Faculty of Science and Engineering Setsunan University Neyagawa Osaka 572-8508 Japan Department of Quantum Matter ADSM Hiroshima University Higashi-hiroshima Hiroshima 739-8530 Japan Materials Sciences Research Center Japan Atomic Energy Agency Sayo Hyogo 679-5148 Japan Japan Synchrotron Radiation Research Institute Sayo Hyogo 679-5198 Japan Faculty of Science Kyoto Sangyo University Kyoto 603-8047 Japan The Institute for Solid State Physics (ISSP) The University of Tokyo Kashiwa Chiba 277-8581 Japan Department of Physics Shizuoka University Shizuoka 422-8529 Japan

We report the ground-state symmetry of Ce 4f states in the heavy-fermion superconductor CeNi2Ge2, yielding anisotropic cf hybridization between Ce 4f states and conducting electrons. By analyzing linear dichroism in soft x-ray absorption and core-level hard x-ray photoemission spectra, the 4f symmetry is determined as Σ-type Γ7, promoting predominant hybridization with the conducting electrons originating from the Ge site. The band structures probed by soft x-ray angle-resolved photoemission indicate that Ge 4p components contribute to band renormalization through anisotropic hybridization effects, suggesting that control of the electronic structures of a Ge orbital helps to achieve the exotic phenomena in CeNi2Ge2.

关键词： Electronic structure Heavy-fermion systems Strongly correlated systems Unconventional superconductors Angle-resolved photoemission spectroscopy Polarization-dependent photoemission spectroscopy X-ray absorption spectroscopy

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Screen-printed Water-soluble Resistors for Wearable electronics: An Analysis of the Fabrication Process

Screen-printed Water-soluble Resistors for Wearable Electron...

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Electronic Components and Technology Conference (ECTC)

作者： K. U. S. Somarathna B. Garakani D. L. Weerawarne G. S. Khinda A. Burns A. Alizadeh M. D. Poliks The State University of New York Binghamton USA Materials Science and Engineering Program The State University of New York Binghamton USA Center for Advanced Microelectronics Manufacturing The State University of New York Binghamton USA GE Global Research General Electric Niskayuna USA

Screen-printing of functional materials is a well-established process in the printed electronics industry. Recent advancements of flexible electronics demand screen-printing of a wide range of functional materials on flexible and stretchable polymeric substrates. The printability, quality of the printed structures, and their reliability during storage and usage are determined by the key fabrication process parameters such as the material properties, printing parameters, curing conditions, and environmental factors. Therefore, proper analysis of distinctive fabrication processes is crucial for problem-solving and process improvements in order to ensure optimum outcomes. In the present study, a low-cost, disposable, multilayer Sweat Rate Electrode (SRE) was fabricated on a flexible and highly stretchable Thermoplastic Polyurethane (TPU) substrate by screen-printing, using a Silver-filled conductive ink and a water-based Carbon-filled conductive ink. Exposure to low humidity and high temperature adversely affected the fabrication process and the robustness of the SRE. These challenges were overcome by better control of environmental conditions in the printing atmosphere and proper selection of the materials, printing parameters, curing conditions, and fabrication process flow. We demonstrate the fabrication of a defect-free, robust SRE on TPU substrate.

关键词： Fabrication Printing Resistors Ink Curing Nonhomogeneous media Robustness

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Characterization of 3D DNA Assemblies Using Cryogenic Electron Microscopy

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Chemical research in Chinese Universities 2020年第2期36卷 227-236页

作者： WANG Mingyang DUAN Jialin DAI Lizhi XIN Xiaodong WANG Fangfang LI Zheng TIAN Ye School of Materials Science and Engineering Xiangtan UniversityXiangtan 411105P.R.China Shenzhen Research Institute Nanjing UniversityShenzhen 518057P.R.China College of Engineering and Applied Sciences National Laboratory of Solid State MicrostructuresCollaborative Innovation Center ofAdvanced MicrostructuresJiangsu Key Laboratory of Artificial Functional MaterialsNanjing UniversityNanjing 210093P.R.China National Facility for Protein Science in Shanghai Zhangjiang LabShanghai 201210R R.China School of Physics and Optoelectronic Engineering Ludong UniversityYantai 264025P.R.China Chemistry and Biomedicine Innovation Center Nanjing UniversityNanjing 210023R R.China

DNA nanotechnology utilizes DNA double strands as building units for self-assembly of DNA *** specific base-pairing interaction between DNA molecules is the basis of these *** decades of development,this technology has been able to construct complex and programmable *** the increase in delicate nature and complexity of the synthesized nanostructures,a characterization technology that can observe these structures in three dimensions has become necessary,and developing such a technology is considerably *** assemblies have been studied using different characterization methods including atomic force microscopy(AFM),scanning electron microscopy(SEM),and transmission electron microscopy(TEM).However,the three-dimensional(3D)DNA assemblies always collapse locally due to the dehydration during the drying *** electron microscopy(cryo-EM)can overcome the challenge by maintaining three-dimensional morphologies of the cryogenic samples and reconstruct the 3D models from cryogenic samples accordingly by collecting thousands of two-dimensional(2D)projection images,which can restore their original morphologies in ***,we have reviewed several typical cases of 3D DNA-assemblies and highlighted the applications of cryo-EM in characterization of these *** comparing with some other characterization methods,we have shown how cryo-EM promoted the development of structural characterization in the field of DNA nanotechnology.

关键词： DNA nanotechnology DNA-assembly Cryogenic electron microscopy

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Recent trend in MOF-derived hollow nanostructures for energy conversion and storage applications: Prospects and environmental consequences

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Coordination Chemistry Reviews 2025年 541卷

作者： Ajmal, Zeeshan Tu, Xiang Mendhe, Avinash C. Umer, Sundus Jangra, Sahil Pradeep, Hareesh Helal, Mohamed H. Singh, Karanpal Khan, Muhammad Zubair Rosaiah, P. Qadeer, Abdul Ding, Pengkai Mohapatra, Debananda Hussain, Iftikhar Al Zoub, Wail Ali, Shafaqat Shuhang, Wang Zhang, Kaili State Key Laboratory of Environmental Criteria and Risk Assessment National Engineering Laboratory for Lake Pollution Control and Ecological Restoration State Environmental Protection Key Laboratory for Lake Pollution Control Chinese Research Academy of Environmental Science Beijing China Department of Electronic Engineering Institute for Wearable Convergence Electronics Kyung Hee University 1732 Deogyeong-daero Giheung-gu Yongin 17104 South Korea Department of Chemistry School of Science Tianjin Key Laboratory of Molecular Optoelectronic Science Tianjin University Tianjin 300072 China Department of Applied Science School of Advanced Engineering UPES Dehradun 248007 India University of Calicut Malappuram Tirur - Calicut Rd Kerala Thenhipalam 673635 India Center for Scientific Research and Entrepreneurship Northern Border University Arar 73213 Saudi Arabia Centre of Research Impact and Outcome Chitkara University Punjab Rajpura 140417 India Department of Materials Science and Engineering Pak-Austria Fachhochschule: Institute of Applied Sciences and Technology Mang Khyber Pakhtunkhwa Haripur 22621 Pakistan Department of Physics Saveetha School of Engineering Saveetha Institute of Medical and Technical Sciences (SIMATS) Thandalam Chennai 602 105 India of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology (UNIST) Ulju-gun Ulsan 44919 South Korea Department of Mechanical Engineering City University of Hong Kong 83 Tat Chee Avenue Hong Kong School of Materials Science and Engineering Yeungnam University Gyeongsan 38541 South Korea Department of Environmental Sciences Government College University Faisalabad Faisalabad 38000 Pakistan Department of Biological Sciences and Technology China Medical University Taichung 40402 Taiwan

Metal-organic frameworks (MOFs), typically referred as porous coordination polymers, represent an innovative class of inorganic-organic hybrid materials that are precisely constructed via highly organized self-assembly of metal ions or clusters alongside organic ligands from the precursor. The MOF can be conceptually framed as a “one-for-all” material, owing to its remarkable ability to fine-tune compositions without compromising their original structural integrity. The inherent versatility of MOFs allows them to be quickly and selectively transformed into their corresponding solid and hollow metal oxides, metal sulfides, or carbonaceous nanostructures simply by manipulating thermal conditions. These MOF-derived nanoporous hollow structural materials, including metal oxides, sulfides, and carbons, exhibit high surface areas and an interconnected pore structure, which are critical factors that contribute to enhanced electrochemical performance across a multitude of applications in the field of energy storage and conversion. Gaining a comprehensive and fundamental understanding of the MOF and MOF-derived hollow nanostructure formation mechanisms, coupled with post-synthesis modifications, is crucial for enhancing the structural, textural, and morphological control during the synthesis processes. Therefore, this timely review article meticulously underscores the essential design principles, innovative synthetic strategies, and a wide range of energy storage-conversion applications, illuminating the intricate hollow nanostructure structure-activity relationship that fundamentally underlies their impressive efficacy in energy storage systems. In addition, the discussion encompasses various ongoing challenges within this field while outlining potential prospects that may arise as MOF research progresses. © 2025 Elsevier B.V.

关键词： Energy conversion Energy storage MOF-derived hollow structures MOFs

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Two-dimensional Indium Oxide at the Epitaxial Graphene/SiC Interface: Synthesis, Structure, Properties, and Devices

arXiv

引用

arXiv 2025年

作者： Turker, Furkan Xu, Bohan Dong, Chengye Labella, Michael Nayir, Nadire Sheremetyeva, Natalya Trdinich, Zachary J. Zhang, Duanchen Adabasi, Gokay Pourbahari, Bita Auker, Wesley E. Wang, Ke Baykara, Mehmet Z. Meunier, Vincent Bassim, Nabil van Duin, Adri C.T. Crespi, Vincent H. Robinson, Joshua A. Department of Materials Science and Engineering The Pennsylvania State University United States Center for 2-Dimensional and Layered Materials The Pennsylvania State University United States Department of Physics The Pennsylvania State University United States Two-Dimensional Crystal Consortium The Pennsylvania State University United States Materials Research Institute The Pennsylvania State University United States Paul-Drude-Institute for Solid State Electronics Leibniz Institute within Forschungsverbund BerlineV Department of Physics Engineering Istanbul Technical University Turkey Department of Mechanical Engineering The Pennsylvania State University United States Department of Engineering Science and Mechanics The Pennsylvania State University United States Department of Mechanical Engineering University of California Merced United States Department of Materials Science and Engineering McMaster University United States Canadian Centre for Electron Microscopy McMaster University United States Department of Chemistry The Pennsylvania State University United States

High-quality two-dimensional (2D) dielectrics are crucial for fabricating 2D/3D hybrid vertical electronic devices such as metal-oxide-semiconductor (MOS) based Schottky diodes and hot electron transistors, the production of which is constrained by the scarcity of bulk layered wide bandgap semiconductors. In this research, we present the synthesis of a new 2D dielectric, monolayer InO2, which differs in stoichiometry from its bulk form, over a large area (>300 µm2) by intercalating at the epitaxial graphene (EG)/SiC interface. By adjusting the lateral size of graphene through optical lithography prior to the intercalation, we tune the thickness of InO2 where predominantly (~85%) monolayer InO2 is formed. The preference for monolayer formation of InO2 is explained using ReaxFF reactive molecular dynamics and density functional theory (DFT) calculations. Additionally, the band gap of InO2 is calculated to be 4.1 eV, differing from its bulk form (2.7 eV). Furthermore, MOS-based Schottky diode measurements on InO2 intercalated EG/n-SiC demonstrate that the EG/n-SiC junction transforms from ohmic to a Schottky junction upon intercalation, with a barrier height of 0.87 eV and a rectification ratio of ~105. These findings introduce a new addition to the 2D dielectric family, showing significant potential for monolayer InO2 to be used as a barrier in vertical electronic devices. Copyright © 2025, The Authors. All rights reserved.

关键词： Schottky barrier diodes

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Electrochemical performance of a three-layer electrode based on Bi nanoparticles,multi-walled carbon nanotube composites for simultaneous Hg(Ⅱ)and Cu(Ⅱ)detection

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Chinese Chemical Letters 2020年第10期31卷 2752-2756页

作者： Qiwen Bao Gang Li Zhengchun Yang Peng Pan Jun Liu Jiayuan Chang Jun Wei Ling Lin School of Precision Instrument and Optoelectronic Engineering the State Key Laboratory of Precision Measuring Technology and InstrumentsTianjin University Tianjin 300072China School of Electrical and Electronic Engineering Tianjin Key Laboratory of Film Electronic&Communication DevicesAdvanced Materials and Printed Electronics CenterTianjin University of TechnologyTianjin 300384China Agency for Science Technology and Research(A*STAR)Singapore Institute of Manufacturing TechnologySingapore 638075Singapore

Electrochemical analysis is a promising technique for detecting biotoxic and non-biodegradable heavy *** article proposes a novel composite electrode based on a polyaniline(PANi)fra mework doped with bismuth nanoparticle@graphene oxide multi-walled carbon nano tubes(Bi NPs@GO-MWCNTs)for the simultaneous detection of multiple heavy metal *** electrodes are prepared on screenprinted electrodes(SPCEs)using an efficient dispensing *** used a SM200 SX-3 A dispenser to load a laborato ry-specific ink with optimized viscosity and adhesion to draw a pattern on the work *** SPCE was used as substrate to facilitate cost-effective and more convenient real-time detection *** techniques,such as cyclic voltammetry and differential pulse voltammetry,were used to demonstrate the sensing capabilities of the proposed sensor,The sensitivity,limit of detection,and linear range of the PANi-Bi NPs@GO-MWCNT electrode are 2.57×10^(2)μA Lμmol^(-1) cm^-2,0.01 nmol/L,and 0.01 nmol/L-5 mmol/L and 0.15×10^(-1)μALμmol^(-1) cm^-2,0.5 nmol/L,and 0.5 nmol/L-5 mmol/L for mercury ion(Hg(Ⅱ))and copper ion(Cu(Ⅱ))detection,*** addition,the electrode exhibits a good selectivity and repeatability for Hg(Ⅱ)and Cu(Ⅱ)sensing when tested in a complex heavy metal ion *** constructed electrode system exhibits a detection performance superior to similar methods and also increases the types of heavy metal ions that can be ***,the proposed device can be used as an efficient sensor for the detection of multiple heavy metal ions in complex environments.

关键词： Bismuth nanoparticle Multi-walled carbon nanotube Electrochemical sensor Hg(Ⅱ) Cu(Ⅱ)

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Gapped nodal planes drive a large topological Nernst effect in a chiral lattice antiferromagnet

arXiv

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arXiv 2024年

作者： Khanh, Nguyen Duy Minami, Susumu Hirschmann, Moritz M. Nomoto, Takuya Jiang, Ming-Chun Yamada, Rinsuke Heinsdorf, Niclas Yamaguchi, Daiki Hayashi, Yudai Okamura, Yoshihiro Watanabe, Hikaru Guo, Guang-Yu Takahashi, Youtarou Seki, Shinichiro Taguchi, Yasujiro Tokura, Yoshinori Arita, Ryotaro Hirschberger, Max Saitama Wako351-0198 Japan Department of Applied Physics and Quantum-Phase Electronics Center The University of Tokyo Tokyo113-8656 Japan Department of Physics The University of Tokyo Tokyo113-8656 Japan Research Center for Advanced Science and Technology Institute of Industrial Science The University of Tokyo Tokyo153-8904 Japan Department of Physics Center for Theoretical Physics National Taiwan University Taipei10617 Taiwan Blusson Quantum Matter Institute University of British Columbia VancouverBCV6T 1Z4 Canada Max Planck Institute for Solid State Research Heisenbergstrasse 1 Stuttgart70569 Germany Physics Division National Center for Theoretical Sciences Taipei10617 Taiwan Institute of Engineering Innovation The University of Tokyo Tokyo113-8656 Japan Tokyo College The University of Tokyo Tokyo113-8656 Japan

The electronic structure of compensated antiferromagnets (CAF) has drawn attention for its ability to create large responses, reminiscent of ferromagnets and suitable for data storage and readout, despite (nearly) net-zero spontaneous magnetization. Many of the striking experimental signatures predicted for CAF - such as giant thermoelectric Nernst effects - are enhanced when two or more electronic bands are nearly degenerate in vicinity of the Fermi energy. Here, we use thermoelectric and electric transport experiments to study the electronic structure of the layered, chiral metal CoNb3S6 in its all-in-all-out CAF ground state and report near-degeneracies of electron bands at the upper and lower boundaries of the first Brillouin zone. Considering non-symmorphic spin-space group symmetries in the non-relativistic approximation for the ordered phase, these near-degeneracies are approximately protected by a lattice translation combined with spin rotation, and are vestiges of nodal planes enforced by a screw axis symmetry in the paramagnetic state. Hot spots of emergent, or fictitious, magnetic fields are formed at the slightly gapped nodal plane, generating the spontaneous Hall and Nernst effects in this CAF. Taking into account more than six hundred Wannier orbitals, our model quantitatively reproduces the observed spontaneous Nernst effect, emphasizes the role of proximate symmetries in the emergent responses of CAF, and demonstrates the promise of ab-initio search for functional responses in a wide class of materials with reconstructed unit cells due to spin or charge order. © 2024, CC BY.

关键词： Electronic structure

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