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Crystallographic and magnetic properties of van der Waals layered FePS_3 crystal

Chinese Physics B 2019年第5期28卷 202-205页

作者： Qi-Yun Xie Min Wu Li-Min Chen Gang Bai Wen-Qin Zou Wei Wang Liang He Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province Nanjing University of Posts & Telecommunications National Laboratory of Solid State Microstructures Nanjing University Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials Collaborative Innovation Center of Advanced MicrostructuresSchool of Electronic Science and Engineering Nanjing University Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University

The crystallographic and magnetic properties are presented for van der Waals antiferromagnetic FePS_3. High-quality single crystals of millimeter size have been successfully synthesized through the chemical vapor transport method. The layered structure and cleavability of the compound are apparent, which are beneficial for a potential exploration of the interesting low dimensional magnetism, as well as for incorporation of FePS_3 into van der Waals heterostructures. For the sake of completeness, we have measured both direct current(dc) and alternating current(ac) magnetic *** paramagnetic to antiferromagnetic transition occurs at approximately T_N 115 K. The effective moment is larger than the spin-only effective moment, suggesting that an orbital contribution to the total angular momentum of the Fe^(2+) could be present. The ac susceptibility is independent of frequency, which means that the spin freezing effect is *** anisotropy of out-of-plane and in-plane susceptibility has been shown, demonstrating the Ising-type magnetic order in FePS_3 system.

关键词： FePS3 van der Waals crystals single crystal antiferromagnetism

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Atomic Structure of Cu49Hf42Al9 Metallic Glass with High Glass-Forming Ability and Plasticity

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Acta Metallurgica Sinica(English Letters) 2019年第7期32卷 803-807页

作者： Kai Li Yu-Jen Chou Fang-Liang Gao Guo-Qiang Li State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 China Engineering Research Center on Solid-State Lighting and Its Informationisation of Guangdong Province South China University of Technology Guangzhou 510640 China Department of Electronic Materials School of Materials Science and Engineering South China University of Technology Guangzhou 510640 China Department of Materials University of Oxford Parks Road Oxford OXI 3PH UK

Electron diffraction was used to study the local atomic structure of Cu49Hf42Al9 metallic glasses (MGs). The amorphous nature of the MG was fully retained after the compression test. The partial radial distribution functions (PRDFs) of the MG structure obtained from the atomic model using reverse Monte Carlo and density functional theory optimization display that the peaks of the first nearest-neighbour distances for Cu-Cu, Hf-Cu and Hf-Hf atomic pairs were located at 2.56 A, 2.78 A and 3.23 A, respectively. The wide distribution of PRDF for Hf-Hf atomic pair explained the high plasticity of the material.

关键词： Metallic glass Radial distribution function Electron diffraction Density functional theory Atomic structure

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Tunable coordination-responsive metal-phenolic membranes for selective and efficient Pb(II) remediation with low-chemical regenerant in actual wastewaters

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Journal of Cleaner Production 2025年 516卷

作者： Liu, Zhanqi Zhang, Manyu Wang, Shuo Qiu, Hui Song, Yaran Sun, Qina Jiao, Tifeng Zhang, Qingrui State Key Laboratory of Metastable Materials Science and Technology Hebei Key Laboratory of Heavy Metal Deep-remediation in Water and Resource Reuse Hebei Province Engineering Research Center for Harmless Synergistic Treatment and Recycling of Municipal Solid Waste Yanshan University Qinhuangdao066004 China China

Heavy metal contamination in industrial wastewater, particularly lead (Pb(II)), poses significant environmental and health challenges. Conventional membrane technologies, like nanofiltration and ultrafiltration, struggle with selectivity and separation recovery in complex wastewater streams. To address this, we present an advanced metal-phenolic network (MPN) membrane that leverages the tunable coordination chemistry of Tannic Acid (TA) and metal complexes to address these limitations. The TA-MPN membrane demonstrates exceptional performance, achieving 6–15 times higher selectivity for Pb(II) than commercial polyamide membranes, even in the presence of competing ions such as Cd(II), Zn(II), Cr(VI) and Ni(II). In electroplating wastewater applications, the membrane reduces Pb(II) levels to below 0.1 mg/L with a capacity of 80 L/m2 and removal efficiency exceeding 95 %, meeting stringent GB21900-2008 standards. Furthermore, the membrane exhibits outstanding regenerability, maintaining consistent performance over 10 regeneration cycles using extremely low doses of 0.1 % HCl. An economic analysis reveals a preparation cost of 22.6 USD/m2 and a treatment cost of 0.227 USD per ton of wastewater, demonstrating its cost-effectiveness. The findings establish the TA-MPN membrane as a scientifically robust solution for selective and cost-effective Pb(II) remediation and recovery, effectively addressing the limitations of conventional membranes while advancing scalable and sustainable technologies for heavy metal treatment. © 2025 Elsevier Ltd

关键词： Membrane technology

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Enhanced corrosion resistance of titanium bipolar plates for PEMFC by N/Ti co-doped a-C pseudo-multilayer coating

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Diamond and Related materials 2025年 156卷

作者： Wang, Zhengde Li, Jin Lv, Jianxiang Zhang, Bin State Key Laboratory of Solid Lubrication Lanzhou Institute of Chemical Physics Chinese Academy of Sciences Lanzhou730000 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China Baotou Research Institute of Rare Earths Baotou014000 China

As a key component of PEMFC, the Ti bipolar plates exhibit unsatisfactory corrosion resistance and surface electric conductivity under operating conditions. Herein, a N/Ti co-doped a-C pseudo-multilayer coating was successfully deposited on Ti bipolar plates using our home-made PVD system. Such modified Ti bipolar plates fully comply with the DOE 2025 target for PEMFC. We attributed the excellent performance to the unique pseudo-multilayer coating, which maintains structural continuity without noticeable delamination, featuring a dense microstructure and exceptional corrosion resistance. Moreover, the injection of N2 not only reduced the sputtering yield of Ti target but also facilitated the transition from sp2 to sp3 hybridization state in a-C and the conversion of Ti–C to Ti–N bonds, consequently improving the coating's corrosion resistance and durability. Our work provides an effective coating strategy to enhance both corrosion resistance and electrical conductivity of Ti bipolar plates. © 2025 Elsevier B.V.

关键词： Corrosion resistant coatings

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Coexistence of ferromagnetism and topology by charge carrier engineering in the intrinsic magnetic topological insulator MnBi4Te7

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Physical Review B 2021年第7期104卷 075134-075134页

作者： Bo Chen Dinghui Wang Zhicheng Jiang Bo Zhang Shengtao Cui Jingwen Guo Hangkai Xie Yong Zhang Muhammad Naveed Yu Du Xuefeng Wang Haijun Zhang Fucong Fei Dawei Shen Zhe Sun Fengqi Song National Laboratory of Solid State Microstructures Collaborative Innovation Center of Advanced Microstructures and College of Physics Nanjing University Nanjing 210093 China Atomic Manufacture Institute (AMI) Nanjing 211805 China Center for Excellence in Superconducting Electronics State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China National Synchrotron Radiation Laboratory University of Science and Technology of China 230029 Hefei China School of Electronic Science and Engineering Nanjing University Nanjing 210093 China

Intrinsic magnetic topological insulators (MTIs) MnBi2Te4 and MnBi2Te4/(Bi2Te3)n are expected to realize the high-temperature quantum anomalous Hall effect and dissipationless electrical transport. However, there is still a lack of ideal MTI candidates with magnetic ordering of the ferromagnetic (FM) ground state. Here, we show a MTI sample of Mn(Bi0.7Sb0.3)4Te7 which holds the coexistence of a FM behavior state and topological nontriviality. The dramatic modulation of the magnetism is induced by a charge carrier engineering process via the Sb substitution in the MnBi4Te7 matrix with antiferromagnetic ordering. The evolution of magnetism in Mn(Bi1−xSbx)4Te7 is systematically investigated by our magnetic measurements and theoretical calculations. The clear topological surface states of the FM sample of Mn(Bi0.7Sb0.3)4Te7 are further verified by angle-resolved photoemission spectroscopy. The demonstration of the intrinsic FM-MTI of Mn(Bi0.7Sb0.3)4Te7 in this paper sheds light on further material optimization of intrinsic MTIs and paves the way for further studies to clarify the relationships between topology, magnetism, and charge carriers in topological materials.

关键词： Density of states Magnetism Topological insulators Angle-resolved photoemission spectroscopy

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二维纳米材料的相变:设计策略和催化应用的最新进展（英文）

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science China materials 2025年第1期 65-85页

作者：吴泽棋钮峰陈达黄岳祥刘贵高周勇涂文广朱熹邹志刚 College of Materials and Chemistry China Jiliang University National Special Superfine Powder Engineering Research Center School of Chemistry and Chemical Engineering Nanjing University of Science and Technology School of Science and Engineering The Chinese University of Hong Kong (Shenzhen) Jiangsu Key Laboratory for Nano Technology National Laboratory of Solid State Microstructures Collaborative Innovation Center of Advanced Microstructures School of Physics Nanjing University

二维(2D)纳米材料的相变会导致其电子和光学特性发生重大变化,为其开辟新的应用领域提供可能.最近, 2D纳米材料相工程的有效策略引起了广泛关注.本文综述了2D纳米材料相变的最新进展及其在催化领域的应用.首先,简要介绍了相变的基本概念...

二维(2D)纳米材料的相变会导致其电子和光学特性发生重大变化,为其开辟新的应用领域提供可能.最近, 2D纳米材料相工程的有效策略引起了广泛关注.本文综述了2D纳米材料相变的最新进展及其在催化领域的应用.首先,简要介绍了相变的基本概念,以及相变引起的显著电子和光学特性.以诱导相变的因素不同,将相变材料分为以下几种关键类型:(i)掺杂,(ii)外场,(iii)光照射,(iv)应变效应,(v)高能粒子激发,以及(vi)热处理.此外,还讨论了基于相变的二维纳米材料的催化领域的应用.最后,总结了控制2D纳米材料相变所涉及的技术挑战,并探讨了在该领域开发新应用的潜在机会.

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Reversible and Nonvolatile Manipulation of the Spin-Orbit Interaction in Ferroelectric Field-Effect Transistors Based on a Two-Dimensional Bismuth Oxychalcogenide

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Physical Review Applied 2022年第4期18卷 044073-044073页

作者： Ming-Yuan Yan Shuang-Shuang Li Jian-Min Yan Li Xie Meng Xu Lei Guo Shu-Juan Zhang Guan-Yin Gao Fei-Fei Wang Shan-Tao Zhang Xiaolin Wang Yang Chai Weiyao Zhao Ren-Kui Zheng National Laboratory of Solid State Microstructures College of Engineering and Applied Science & Jiangsu Key Laboratory of Artificial Functional Materials & Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 People’s Republic of China School of Materials Science and Engineering and Jiangxi Engineering Laboratory for Advanced Functional Thin Films Nanchang University Nanchang 330031 People’s Republic of China Department of Applied Physics The Hong Kong Polytechnic University Hong Kong 999077 People’s Republic of China College of Science Hohai University Nanjing 211189 People’s Republic of China Hefei National Laboratory for Physical Sciences at the Microscale University of Science and Technology of China Hefei 230026 People’s Republic of China Key Laboratory of Optoelectronic Material and Device Department of Physics Shanghai Normal University Shanghai 200234 People’s Republic of China Institute for Superconducting and Electronic Materials & ARC Centre of Excellence in Future Low-Energy Electronics Technologies Innovation Campus University of Wollongong New South Wales 2500 Australia School of Physics and Materials Science Guangzhou University Guangzhou 510006 People’s Republic of China

The spin-orbit interaction (SOI) offers a nonferromagnetic scheme to realize spin polarization through utilizing an electric field. Electrically tunable SOIs through electrostatic gates have been investigated; however, the relatively weak and volatile tunability limits their practical applications in spintronics. Here, we demonstrate the nonvolatile electric field control of the SOI via constructing ferroelectric Rashba architectures, i.e., two-dimensional Bi2O2Se/Pb(Mg1/3Nb2/3)O3-PbTiO3 ferroelectric field-effect transistors. The experimentally observed weak antilocalization (WAL) cusp in Bi2O2Se films implies the Rashba-type SOI that arises from the asymmetric confinement potential. Significantly, taking advantage of the switchable ferroelectric polarization, the WAL-to-weak-localization-transition trend reveals the competition between spin relaxation and the dephasing process, and the variation of carrier density leads to a reversible and nonvolatile modulation of the spin-relaxation time and the spin-splitting energy of Bi2O2Se films by this ferroelectric gating. Our work provides a scheme to achieve nonvolatile control of the Rashba SOI with the utilization of ferroelectric remanent polarization.

关键词： Electric field effects Magnetoelectric effect Spin-orbit coupling 2-dimensional systems Ferroelectrics Field-effect transistors Semiconductor compounds Two-dimensional electron system

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Noble gas as a functional dopant in ZnO

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npj Computational materials 2019年第1期5卷 822-827页

作者： Oleksandr I.Malyi Kostiantyn V.Sopiha Clas Persson Centre for Materials Science and Nanotechnology Department of PhysicsUniversity of OsloP.O.Box 1048BlindernNO-0316 OsloNorway Ångström Solar Center Solid State ElectronicsDepartment of Engineering SciencesUppsala UniversityBox 534SE-75121 UppsalaSweden

Owing to fully occupied orbitals,noble gases are considered to be chemically inert and to have limited effect on materials properties under standard ***,using first-principles calculations,we demonstrate herein that the insertion of noble gas(***,Ne,or Ar)in ZnO results in local destabilization of electron density of the material driven by minimization of an unfavorable overlap of atomic orbitals of the noble gas and its surrounding ***,the noble gas defect(interstitial or substitutional)in ZnO pushes the electron density of its surrounding atoms away from the ***,the host material confines the electron density of the noble *** a consequence,the interaction of He,Ne,or Ar with O vacancies of ZnO in different charge states q(ZnO:VO^(q))affects the vacancy stability and their electronic ***,we find that the noble gas is a functional dopant that can delocalize the deep in-gap VO^(q) states and lift electrons associated with the vacancy to the conduction band.

关键词： dopant noble vacancy

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Critical topology and pressure-induced superconductivity in the van der Waals compound AuTe2Br

arXiv

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arXiv 2022年

作者： Cheng, Erjian Shi, Xianbiao Yan, Limin Huang, Tianheng Liu, Fengliang Ma, Wenlong Wang, Zeji Jia, Shuang Sun, Jian Zhao, Weiwei Yang, Wenge Xu, Yang Li, Shiyan State Key Laboratory of Surface Physics Department of Physics Fudan University Shanghai200438 China State Key Laboratory of Advanced Welding Joining and Flexible Printed Electronics Technology Center Harbin Institute of Technology Shenzhen518055 China Key Laboratory of Micro-Systems and Micro-Structures Manufacturing Ministry of Education Harbin Institute of Technology Harbin150001 China Center for High Pressure Science and Technology Advanced Research Shanghai201203 China National Laboratory of Solid State Microstructures School of Physics Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210093 China Department of Physics Nanchang University Nanchang330031 China ICQM School of Physics Peking University Beijing100871 China CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of Science Beijing100190 China Sauvage Laboratory for Smart Materials School of Materials Science and Engineering Harbin Institute of Technology Shenzhen China School of Physics and Electronic Science East China Normal University Shanghai200241 China Collaborative Innovation Center of Advanced Microstructures Nanjing210093 China Shanghai Research Center for Quantum Sciences Shanghai201315 China

The study on quantum spin Hall effect and topological insulators formed the prologue to the surge of research activities in topological materials in the past decade. Compared to intricately engineered quantum wells, three-dimensional weak topological insulators provide a natural route to the quantum spin Hall effect, due to the adiabatic connection between them and a stack of quantum spin Hall insulators, and the convenience in exfoliation of samples associated with their van der Waals-type structure. Despite these advantages, both theoretical prediction and experimental identification of weak topological insulators remain scarce. Here, based on first-principles calculations, we show that AuTe2Br locates at the boundary between a strong and a weak topological insulating state. More interestingly, the critical topology of AuTe2Br persists up to an applied pressure of ~ 15.4 GPa before a structural phase transition accompanied by a change of electronic topology and the onset of superconductivity. Our results establish AuTe2Br as a new candidate for weak topological insulators with the potential to realize various other topological phases of matter. Copyright © 2022, The Authors. All rights reserved.

关键词： Tellurium compounds

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Nonreciprocal Single-Photon Band Structure

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Physical Review Letters 2022年第20期128卷 203602-203602页

作者： Jiang-Shan Tang Wei Nie Lei Tang Mingyuan Chen Xin Su Yanqing Lu Franco Nori Keyu Xia College of Engineering and Applied Sciences National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210023 China School of Physics Nanjing University Nanjing 210023 China RIKEN Quantum Computing Center RIKEN Cluster for Pioneering Research Wako-shi Saitama 351-0198 Japan Center for Joint Quantum Studies and Department of Physics School of Science Tianjin University Tianjin 300350 China School of Electronic Science and Engineering Nanjing University Nanjing 210023 China Physics Department The University of Michigan Ann Arbor Michigan 48109-1040 USA Jiangsu Key Laboratory of Artificial Functional Materials Nanjing University Nanjing 210023 China Key Laboratory of Intelligent Optical Sensing and Manipulation (Nanjing University) Ministry of Education Nanjing 210023 China

We study a single-photon band structure in a one-dimensional coupled-resonator optical waveguide that chirally couples to an array of two-level quantum emitters (QEs). The chiral interaction between the resonator mode and the QE can break the time-reversal symmetry without the magneto-optical effect and an external or synthetic magnetic field. As a result, nonreciprocal single-photon edge states, band gaps, and flat bands appear. By using such a chiral QE coupled-resonator optical waveguide system, including a finite number of unit cells and working in the nonreciprocal band gap, we achieve frequency-multiplexed single-photon circulators with high fidelity and low insertion loss. The chiral QE-light interaction can also protect one-way propagation of single photons against backscattering. Our work opens a new door for studying unconventional photonic band structures without electronic counterparts in condensed matter and exploring its applications in the quantum regime.

关键词： Cavity quantum electrodynamics Light propagation, transmission & absorption Quantum description of light-matter interaction Topological effects in photonic systems

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