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Seebeck Coefficient in a Cuprate Superconductor: Particle-Hole Asymmetry in the Strange Metal Phase and Fermi Surface Transformation in the Pseudogap Phase

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Physical Review X 2022年第1期12卷 011037-011037页

作者： A. Gourgout G. Grissonnanche F. Laliberté A. Ataei L. Chen S. Verret J.-S. Zhou J. Mravlje A. Georges N. Doiron-Leyraud Louis Taillefer Institut Quantique Département de physique and RQMP Université de Sherbrooke Sherbrooke Québec Canada Laboratory of Atomic and Solid State Physics Cornell University Ithaca New York USA Kavli Institute at Cornell for Nanoscale Science Ithaca New York USA Materials Science and Engineering Program/Mechanical Engineering University of Texas-Austin Austin Texas USA Department of Theoretical Physics Institute Jožef Stefan Ljubljana Slovenia Collège de France 11 place Marcelin Berthelot Paris France Center for Computational Quantum Physics Flatiron Institute New York New York USA CPHT CNRS Ecole Polytechnique IP Paris Palaiseau France DQMP Université de Genève Geneva Switzerland Canadian Institute for Advanced Research Toronto Ontario Canada

We report measurements of the Seebeck effect in both the ab plane (Sa) and along the c axis (Sc) of the cuprate superconductor La1.6−xNd0.4SrxCuO4 (Nd-LSCO), performed in magnetic fields large enough to suppress superconductivity down to low temperature. We use the Seebeck coefficient as a probe of the particle-hole asymmetry of the electronic structure across the pseudogap critical doping p⋆=0.23. Outside the pseudogap phase, at p=0.24>p⋆, we observe a positive and essentially isotropic Seebeck coefficient as T→0. That S>0 at p=0.24 is at odds with expectations given the electronic band structure of Nd-LSCO above p⋆ and its known electronlike Fermi surface. We can reconcile this observation by invoking an energy-dependent scattering rate with a particle-hole asymmetry, possibly rooted in the non-Fermi-liquid nature of cuprates just above p⋆. Inside the pseudogap phase, for p

关键词： Superconductivity Strongly correlated systems

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Solvent engineering in perovskite nanocrystal colloid inks for super-fine electrohydrodynamic inkjet printing of color conversion microstructures in micro-LED displays

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Chinese Chemical Letters 2025年第8期36卷

作者： Wang, Shuli Kong, Xuemin Cai, Siting Luo, Yunshu Gu, Yuxuan Fan, Xiaotong Chen, Guolong Yang, Xiao Chen, Zhong Lin, Yue Fujian Engineering Research Center for Solid-State Lighting Department of Electronic Science School of Electronic Science and Engineering Xiamen University Xiamen 361102 China College of Internet of Things Engineering Wuxi Taihu University Wuxi 214026 China Department of Physics and Electronic Engineering Jinzhong University Jinzhong 030606 China Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM) Xiamen 361102 China

Super-fine electrohydrodynamic inkjet (SIJ) printing of perovskite nanocrystal (PNC) colloid ink exhibits significant potential in the fabrication of high-resolution color conversion microstructures arrays for full-color micro-LED displays. However, the impact of solvent on both the printing process and the morphology of SIJ-printed PNC color conversion microstructures remains underexplored. In this study, we prepared samples of CsPbBr3 PNC colloid inks in various solvents and investigated the solvent's impact on SIJ printed PNC microstructures. Our findings reveal that the boiling point of the solvent is crucial to the SIJ printing process of PNC colloid inks. Only does the boiling point of the solvent fall in the optimal range, the regular positioned, micron-scaled, conical PNC microstructures can be successfully printed. Below this optimal range, the ink is unable to be ejected from the nozzle;while above this range, irregular positioned microstructures with nanoscale height and coffee-ring-like morphology are produced. Based on these observations, high-resolution color conversion PNC microstructures were effectively prepared using SIJ printing of PNC colloid ink dispersed in dimethylbenzene solvent.

关键词： Color conversion microstructures arrays Electrohydrodynamic inkjet printing Micro-LED display Perovskite nanocrystal Solvent

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Evidence for particle acceleration approaching PeV energies in the W51 complex

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science Bulletin 2024年第18期69卷 2833-2841页

作者： LHAASO Collaboration Zhen Cao F.Aharonian Axikegu Y.X.Bai Y.W.Bao D.Bastieri X.J.Bi Y.J.Bi W.Bian A.V.Bukevich Q.Cao W.Y.Cao Zhe Cao J.Chang J.F.Chang A.M.Chen E.S.Chen H.X.Chen Liang Chen Lin Chen Long Chen M.J.Chen M.L.Chen Q.H.Chen S.Chen S.H.Chen S.Z.Chen T.L.Chen Y.Chen N.Cheng Y.D.Cheng M.Y.Cui S.W.Cui X.H.Cui Y.D.Cui B.Z.Dai H.L.Dai Z.G.Dai Danzengluobu X.Q.Dong K.K.Duan J.H.Fan Y.Z.Fan J.Fang J.H.Fang K.Fang C.F.Feng H.Feng L.Feng S.H.Feng X.T.Feng Y.Feng Y.L.Feng S.Gabici B.Gao C.D.Gao Q.Gao W.Gao W.K.Gao M.M.Ge L.S.Geng G.Giacinti G.H.Gong Q.B.Gou M.H.Gu F.L.Guo X.L.Guo Y.Q.Guo Y.Y.Guo Y.A.Han M.Hasan H.H.He H.N.He J.Y.He Y.He Y.K.Hor B.W.Hou C.Hou X.Hou H.B.Hu Q.Hu S.C.Hu D.H.Huang T.Q.Huang W.J.Huang X.T.Huang X.Y.Huang Y.Huang X.L.Ji H.Y.Jia K.Jia K.Jiang X.W.Jiang Z.J.Jiang M.Jin M.M.Kang I.Karpikov D.Kuleshov K.Kurinov B.B.Li C.M.Li Cheng Li Cong Li D.Li F.Li H.B.Li H.C.Li Jian Li Jie Li K.Li S.D.Li W.L.Li W.L.Li X.R.Li Xin Li Y.Z.Li Zhe Li Zhuo Li E.W.Liang Y.F.Liang S.J.Lin B.Liu C.Liu D.Liu D.B.Liu H.Liu H.D.Liu J.Liu J.L.Liu M.Y.Liu R.Y.Liu S.M.Liu W.Liu Y.Liu Y.N.Liu Q.Luo Y.Luo H.K.Lv B.Q.Ma L.L.Ma X.H.Ma J.R.Mao Z.Min W.Mitthumsiri H.J.Mu Y.C.Nan A.Neronov L.J.Ou P.Pattarakijwanich Z.Y.Pei J.C.Qi M.Y.Qi B.Q.Qiao J.J.Qin A.Raza D.Ruffolo A.Sáiz M.Saeed D.Semikoz L.Shao O.Shchegolev X.D.Sheng F.W.Shu H.C.Song Yu.V.Stenkin V.Stepanov Y.Su D.X.Sun Q.N.Sun X.N.Sun Z.B.Sun J.Takata P.H.T.Tam Q.W.Tang R.Tang Z.B.Tang W.W.Tian C.Wang C.B.Wang G.W.Wang H.G.Wang H.H.Wang J.C.Wang Kai Wang Kai Wang L.P.Wang L.Y.Wang P.H.Wang R.Wang W.Wang X.G.Wang X.Y.Wang Y.Wang Y.D.Wang Y.J.Wang Z.H.Wang Z.X.Wang Zhen Wang Zheng Wang D.M.Wei J.J.Wei Y.J.Wei T.Wen C.Y.Wu H.R.Wu Q.W.Wu S.Wu X.F.Wu Y.S.Wu S.Q.Xi J.Xia G.M.Xiang D.X.Xiao G.Xiao Y.L.Xin Y.Xing D.R.Xiong Z.Xiong D.L.Xu R.F.Xu R.X.Xu W.L.Xu L.Xue D.H.Yan J.Z.Yan T.Yan C.W.Yang C.Y.Yang F.Yang F.F.Yang L.L.Yang M.J.Yang R.Z.Yang W.X.Yang Y.H.Yao Z.G.Yao L.Q.Yin N.Yin X.H.You Z.Y.You Y.H.Yu Q.Yuan H.Yue H.D.Zeng T.X.Zeng W.Zeng M.Zha B.B.Zhang F.Zhang H.Zhang 不详 Key Laboratory of Particle Astrophysics&Experimental Physics Division&Computing Center Institute of High Energy PhysicsChinese Academy of SciencesBeijing 100049China University of Chinese Academy of Sciences Beijing 100049China TIANFU Cosmic Ray Research Center ChengduChina Dublin Institute for Advanced Studies 31 Fitzwilliam Place2 DublinIreland Max-Planck-Institut for Nuclear Physics P.O.Box 103980Heidelberg 69029Germany School of Physical Science and Technology&School of Information Science and Technology Southwest Jiaotong UniversityChengdu 610031China School of Astronomy and Space Science Nanjing UniversityNanjing 210023China Center for Astrophysics Guangzhou UniversityGuangzhou 510006China Tsung-Dao Lee Institute&School of Physics and Astronomy Shanghai Jiao Tong UniversityShanghai 200240China Institute for Nuclear Research of Russian Academy of Sciences Moscow 117312Russia Hebei Normal University Shijiazhuang 050024China University of Science and Technology of China Hefei 230026China State Key Laboratory of Particle Detection and Electronics China Key Laboratory of Dark Matter and Space Astronomy&Key Laboratory of Radio Astronomy Purple Mountain ObservatoryChinese Academy of SciencesNanjing 210023China Research Center for Astronomical Computing Zhejiang LaboratoryHangzhou 311121China Key Laboratory for Research in Galaxies and Cosmology Shanghai Astronomical ObservatoryChinese Academy of SciencesShanghai 200030China School of Physics and Astronomy Yunnan UniversityKunming 650091China Key Laboratory of Cosmic Rays(Tibet University) Ministry of EducationLhasa 850000China National Astronomical Observatories Chinese Academy of SciencesBeijing 100101China School of Physics and Astronomy(Zhuhai)&School of Physics(Guangzhou)&Sino-French Institute of Nuclear Engineering and Technology(Zhuhai) Sun Yat-sen UniversityZhuhai 519000&Guangzhou 510275GuangdongChina Institute of Frontier and Interdisciplinary Science Shandong UniversityQingdao 266237China APC UniversitéParis Cité

Theγ-ray emission from the W51 complex is widely acknowledged to be attributed to the interaction between the cosmic rays(CRs)accelerated by the shock of supernova remnant(SNR)W51C and the dense molecular clouds in the adjacent star-forming region,***,the maximum acceleration capability of W51C for CRs remains *** on observations conducted with the Large High Altitude Air Shower Observatory(LHAASO),we report a significant detection ofγrays emanating from the W51 complex,with energies from 2 to 200 *** LHAASO measurements,for the first time,extend theγ-ray emission from the W51 complex beyond 100 TeV and reveal a significant spectrum bending at tens of *** combining the"π^(0)-decay bump"featured data from Fermi-LAT,the broadbandγ-ray spectrum of the W51 region can be well-characterized by a simple pp-collision *** observed spectral bending feature suggests an exponential cutoff at~400 TeV or a power-law break at~200 TeV in the CR proton spectrum,most likely providing the first evidence of SNRs serving as CR accelerators approaching the PeV ***,two young star clusters within W51B could also be theoretically viable to produce the most energeticγrays observed by *** findings strongly support the presence of extreme CR accelerators within the W51 complex and provide new insights into the origin of Galactic CRs.

关键词： UHE c-ray Cosmic rays SNR W51C Star clusters

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aflow++: a C++ framework for autonomous materials design

arXiv

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arXiv 2022年

作者： Oses, Corey Esters, Marco Hicks, David Divilov, Simon Eckert, Hagen Friedrich, Rico Mehl, Michael J. Smolyanyuk, Andriy Campilongo, Xiomara van de Walle, Axel Schroers, Jan Kusne, A. Gilad Takeuchi, Ichiro Zurek, Eva Nardelli, Marco Buongiorno Fornari, Marco Lederer, Yoav Levy, Ohad Toher, Cormac Curtarolo, Stefano Department of Mechanical Engineering and Materials Science Duke University DurhamNC27708 United States Center for Autonomous Materials Design Duke University DurhamNC27708 United States LIFT American Lightweight Materials Manufacturing Innovation Institute DetroitMI48216 United States Institute of Ion Beam Physics and Materials Research Helmholtz-Zentrum Dresden-Rossendorf Dresden01328 Germany Theoretical Chemistry Technische Universität Dresden Dresden01062 Germany Institute of Solid State Physics Technische Universität Wien WienA-1040 Austria School of Engineering Brown University ProvidenceRI02912 United States Department of Mechanical Engineering and Materials Science Yale University New HavenCT06511 United States Materials Measurement Science Division National Institute of Standards and Technology GaithersburgMD20899 United States Department of Materials Science and Engineering University of Maryland College ParkMD20742 United States Department of Chemistry State University of New York at Buffalo BuffaloNY14260 United States Department of Physics Department of Chemistry University of North Texas DentonTX76203 United States Santa Fe Institute Santa FeNM87501 United States Department of Physics Science of Advanced Materials Program Central Michigan University Mount PleasantMI48859 United States Department of Physics NRCN P.O. Box 9001 Beer-Sheva84190 Israel Department of Materials Science and Engineering Department of Chemistry and Biochemistry University of Texas at Dallas RichardsonTX75080 United States

The realization of novel technological opportunities given by computational and autonomous materials design requires efficient and effective frameworks. For more than two decades, aflow++ (Automatic-Flow Framework for materials Discovery) has provided an interconnected collection of algorithms and workflows to address this challenge. This article contains an overview of the software and some of its most heavily-used functionalities, including algorithmic details, standards, and examples. Key thrusts are highlighted: the calculation of structural, electronic, thermodynamic, and thermomechanical properties in addition to the modeling of complex materials, such as high-entropy ceramics and bulk metallic glasses. The aflow++ software prioritizes interoperability, minimizing the number of independent parameters and tolerances. It ensures consistency of results across property sets — facilitating machine learning studies. The software also features various validation schemes, offering real-time quality assurance for data generated in a high-throughput fashion. Altogether, these considerations contribute to the development of large and reliable materials databases that can ultimately deliver future materials systems. © 2022, CC BY.

关键词： Quality assurance

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Charge and spin state of dilute Fe in NaCl and LiF

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Physical Review B 2022年第17期106卷 174108-174108页

作者： H. P. Gunnlaugsson A. Mokhles Gerami H. Masenda S. Olafsson R. Adhikari K. Johnston K. Naicker G. Peters J. Schell D. Zyabkin K. Bharuth-Ram P. Krastev R. Mantovan D. Naidoo I. Unzueta ISOLDE Collaboration University of Iceland Dunhaga 3 IS-107 Reykjavík Iceland School of Particles and Accelerators Institute for Research in Fundamental Sciences (IPM) P.O. Box 19395-5531 Tehran Iran European Organization for Nuclear Research (CERN) CH-1211 Geneva Switzerland School of Physics University of the Witwatersrand Johannesburg 2050 South Africa Institute for Semiconductor and Solid State Physics Johannes Kepler University Altenbergerstr. 69 Linz Austria School of Chemistry and Physics University of KwaZulu-Natal Durban 4001 South Africa Institute for Materials Science and Center for Nanointegration Duisburg-Essen (CENIDE) University of Duisburg-Essen 45141 Essen Germany Chair Materials for Electrical Engineering and Electronics Institute of Materials Science and Engineering Institute of Micro and Nanotechnologies MacroNano® TU Ilmenau Gustav-Kirchhoff-Strasse 5 98693 Ilmenau Germany Institute for Nuclear Research and Nuclear Energy Bulgarian Academy of Sciences 72 Tsarigradsko Chaussee Boulevard Sofia 1784 Bulgaria CNR-IMM Unit of Agrate Brianza Via Olivetti 2 I-20864 Agrate Brianza (MB) Italy Department of Applied Physics School of Engineering Gipuzkoa University of the Basque Country (UPV/EHU) Plaza Europa 1 20018 San Sebastian Spain

There is an apparent mismatch between electron paramagnetic resonance and Mössbauer spectroscopy results on the charge and spin states of dilute Fe impurities in NaCl; Mössbauer spectroscopy data have been interpreted in terms of high-spin Fe2+, while electron paramagnetic resonance studies suggest low-spin Fe1+. In the present study, the charge and spin states of dilute substitutional Fe impurities in NaCl and LiF have been investigated with Mn57→Fe57 emission Mössbauer spectroscopy. A scheme is proposed which takes into account the effects of nearest-neighbor distances and electronegativity difference of the host atoms on the Mössbauer isomer shift and allows for the unequivocal differentiation between high-spin Fe2+ and high/low-spin Fe1+ in Mössbauer spectroscopy. From these considerations, the Mössbauer results are found to be consistent with dilute Fe impurities in NaCl and LiF in a low-spin Fe1+ state. These conclusions are supported by theoretical calculations of isomer shifts and formation energies based on the density-functional theory. The experimental results furthermore suggest that charge compensation of dilute Mn2+ dopants in NaCl and LiF is achieved by Na vacancies and F− interstitials, respectively.

关键词： Defects Impurities Spin Density functional calculations Mössbauer emission spectroscopy

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Nonlinear co-generation of graphene plasmons for optoelectronic logic operations

arXiv

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arXiv 2022年

作者： Li, Yiwei An, Ning Lu, Zheyi Wang, Yuchen Chang, Bing Tan, Teng Guo, Xuhan Xu, Xizhen He, Jun Xia, Handing Wu, Zhaohui Su, Yikai Liu, Yuan Rao, Yunjiang Soavi, Giancarlo Yao, Baicheng University of Electronic Science and Technology of China Chengdu China School of Physics and Electronics Hunan University Changsha China Research Centre for Optical Fibre Sensing Zhejiang Laboratory Hangzhou China State Key Laboratory of Advanced Optical Communication Systems and Networks Shanghai Jiao Tong University Shanghai China Guangdong and Hong Kong Joint Research Center for Optical Fiber Sensors Shenzhen University Shenzhen China Research Center of Laser Fusion China Academic of Engineering Physics Mianyang621900 China Institute of Solid State Physics Friedrich Schiller University Jena Jena Germany Abbe Center of Photonics Friedrich Schiller University Jena Jena Germany

Surface plasmons in graphene provide a compelling strategy for advanced photonic technologies thanks to their tight confinement, fast response and tunability. Recent advances in the field of all-optical generation of graphene’s plasmons in planar waveguides offer a promising method for high-speed signal processing in nanoscale integrated optoelectronic devices. Here, we use two counter propagating frequency combs with temporally synchronized pulses to demonstrate deterministic all-optical generation and electrical control of multiple plasmon polaritons, excited via difference frequency generation (DFG). Electrical tuning of a hybrid graphene-fibre device offers a precise control over the DFG phase-matching, leading to tunable responses of the graphene’s plasmons at different frequencies across a broadband (0 ~ 50 THz) and provides a powerful tool for high-speed logic operations. Our results offer insights for plasmonics on hybrid photonic devices based on layered materials and pave the way to high-speed integrated optoelectronic computing circuits. © 2022, CC BY.

关键词： Graphene

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Comprehensive study of crystalline AlN/sapphire templates after high-temperature annealing with various sputtering conditions

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Journal of Semiconductors 2020年第12期41卷 94-100页

作者： Wen Gu Zhibin Liu Yanan Guo Xiaodong Wang Xiaolong Jia Xingfang Liu Yiping Zeng Junxi Wang Jinmin Li Jianchang Yan Research and Development Center for Solid-State Lighting Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application Beijing 100083China Advanced Ultraviolet Optoelectronics Co.Ltd Changzhi 046000China Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Youwill Hitech Co.Ltd Beijing 100083China

High-quality AlN/sapphire templates were fabricated by the combination of sputtering and high-temperature(HT)*** influence of sputtering parameters including nitrogen flux,radio frequency power,and substrate temperature on the crystalline quality and surface morphology of annealed AlN films were *** lower substrate temperature,lower power,and lower N2 flux,the full width at half maximum of the X-ray rocking curve for AlN(0002)and(102)were improved to 97.2 and 259.2 arcsec after high-temperature *** happens because the increased vacancy concentration of sputtered AlN films can facilitate the annihilation of dislocations by increasing the recovery rate during HT *** and step-bunching morphologies were clearly observed with optimized sputtering conditions.

关键词： sputter annealing AlN dislocation density

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High performance lateral Schottky diodes based on quasi-degenerated Ga_2O_3

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Chinese Physics B 2019年第3期28卷 54-59页

作者： Yang Xu Xuanhu Chen Liang Cheng Fang-Fang Ren Jianjun Zhou Song Bai Hai Lu Shulin Gu Rong Zhang Youdou Zheng Jiandong Ye School of Electronic Science and Engineering Nanjing UniversityNanjing 210093China Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics Nanjing UniversityNanjing 210093China Research Institute of Shenzhen Nanjing UniversityShenzhen 518057China State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices The 55th Research Institute of China Electronics Technology Group CorporationNanjing 210016China

Ni/β-Ga_2 O_3 lateral Schottky barrier diodes(SBDs) were fabricated on a Sn-doped quasi-degenerate n^+-Ga_2 O_3(201)bulk substrate. The resultant diodes with an area of 7.85 ×10^(-5) cm^2 exhibited excellent rectifying characteristics with an ideality factor of 1.21, a forward current density(J) of 127.4 A/cm2 at 1.4 V, a specific on-state resistance(R_(on,sp)) of1.54 mΩ·cm^2,and an ultra-high on/off ratio of 2.1 ×10^(11) at±1 V. Due to a small depletion region in the highly-doped substrate, a breakdown feature was observed at-23 V, which corresponded to a breakdown field of 2.1 MV/cm and a power figure-of-merit(VB2/R_(on)) of 3.4×10~5 W/cm^2. Forward current-voltage characteristics were described well by the thermionic emission theory while thermionic field emission and trap-assisted tunneling were the dominant transport mechanisms at low and high reverse biases, respectively, which was a result of the contribution of deep-level traps at the metal-semiconductor interface. The presence of interfacial traps also caused the difference in Schottky barrier heights of 1.31 eV and 1.64 eV respectively determined by current-voltage and capacitance-voltage characteristics. With reduced trapping effect and incorporation of drift layers, the β-Ga_2 O_3 SBDs could further provide promising materials for delivering both high current output and high breakdown voltage.

关键词： β-Ga2O3 Schottky diode transport mechanism quasi-degeneration rectifier

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Icosahedral silicon boride: A potential hybrid photovoltaic-thermoelectric for energy harvesting

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Physical Review materials 2021年第11期5卷 115402-115402页

作者： Kang Xia Qun Chen Hao Gao Xiaolei Feng Jianan Yuan Cong Liu Simon A. T. Redfern Jian Sun Department of Applied Physics College of Science Nanjing Forestry University Nanjing 210037 China National Laboratory of Solid State Microstructures School of Physics and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China Center for High Pressure Science and Technology Advanced Research Beijing 100094 China Department of Earth Sciences University of Cambridge Downing Street Cambridge CB2 3EQ United Kingdom Asian School of the Environment and School of Materials Science and Engineering Nanyang Technological University Singapore 639798

Boron-rich compounds have attracted significant attention due to their promising and diverse physical properties, which include ultrahardness, resistance to oxidation and corrosion, and even superconductivity. Here, using a crystal structure search method based on first-principles calculations, we find a boron-rich silicon compound SiB12 that is stable under moderate pressure of around 20 GPa, and which we predict is recoverable to ambient pressure. This silicon boride, with space group Pnnm, is structurally related to the γ−B28 boron phase. Specifically, the SiB12 structure is formed by replacing the B2 pairs in γ−B28 with silicon atoms. Our calculations show that this Pnnm SiB12 phase exhibits good thermal stability at moderate pressures above 20 GPa and temperatures to 900 K. We suggest this structure has dynamic stability at ambient pressure and remains stable to temperatures as high as 2000 K. Impressively, this SiB12 phase possesses good light absorption and thermoelectrical properties, which are enhanced by its small and indirect band gap, doubly degenerate bands, and low lattice thermal conductivity. Our predictions should stimulate further investigations of this class of boron-rich semiconductors, especially in view of their superior photovoltaic and thermoelectric properties which may be beneficial in energy applications.

关键词： Crystal structure Hardness Pressure effects Functional materials Photovoltaic absorbers Thermoelectrics First-principles calculations

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二维材料最新研究进展

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物理化学学报 2021年第12期37卷 1-151页

作者：常诚陈伟陈也陈永华陈雨丁峰樊春海范红金范战西龚成宫勇吉何其远洪勋胡晟胡伟达黄维黄元季威李德慧李连忠李强林立凌崇益刘鸣华刘楠刘庄 Kian Ping Loh 马建民缪峰彭海琳邵明飞宋礼苏邵孙硕谭超良唐智勇王定胜王欢王金兰王欣王欣然 Andrew T.S.Wee 魏钟鸣吴宇恩吴忠帅熊杰熊启华徐伟高尹鹏曾海波曾志远翟天佑张晗张辉张其春张铁锐张翔赵立东赵美廷赵伟杰赵运宣周凯歌周兴周喻朱宏伟张华刘忠范 Institute of Science and Technology Austria Am Campus 13400 KlosterneuburgAustria Department of Chemistry National University of Singapore3 Science Drive 3117543Singapore Department of Chemistry The Chinese University of Hong KongShatinNew TerritoriesHong KongChina Key Laboratory of Flexible Electronics and Institute of Advanced Materials Nanjing Tech UniversityNanjing 211816China School of Life Sciences Shanghai UniversityShanghai 200444China Centre for Multidimensional Carbon Materials Institute for Basic ScienceUlsan 44919Korea School of Chemistry and Chemical Engineering Shanghai Jiao Tong UniversityShanghai 200240China School of Physical and Mathematical Sciences Nanyang Technological UniversitySingapore 637371Singapore Department of Chemistry City University of Hong KongKowloonHong KongChina Department of Electrical and Computer Engineering and Quantum Technology Center University of MarylandCollege ParkMaryland 20742USA School of Materials Science and Engineering Beihang UniversityBeijing 100191China Department of Materials Science and Engineering City University of Hong KongKowloonHong KongChina Center of Advanced Nanocatalysis(CAN) Hefei National Laboratory for Physical Sciences at the MicroscaleDepartment of Applied ChemistryUniversity of Science and Technology of ChinaHefei 230026China College of Chemistry and Chemical Engineering State Key Laboratory of Physical Chemistry of Solid SurfacesCollaborative Innovation Center of Chemistry for Energy Materials(iChEM)Xiamen UniversityXiamen361005Fujian ProvinceChina State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China Advanced Research Institute of Multidisciplinary Science Beijing Institute of TechnologyBeijing100081China Beijing Key Laboratory of Optoelectronic Functional Materials&Micro-Nano Devices Department of PhysicsRenmin University of ChinaBeijing 100872China School of Optical and Electronic Information Wuhan National Laboratory

research on two-dimensional(2D) materials has been explosively increasing in last seventeen years in varying subjects including condensed matter physics, electronic engineering, materials science, and chemistry since the mechanical exfoliation of graphene in 2004. Starting from graphene, 2D materials now have become a big family with numerous members and diverse categories. The unique structural features and physicochemical properties of 2D materials make them one class of the most appealing candidates for a wide range of potential applications. In particular, we have seen some major breakthroughs made in the field of 2D materials in last five years not only in developing novel synthetic methods and exploring new structures/properties but also in identifying innovative applications and pushing forward commercialisation. In this review, we provide a critical summary on the recent progress made in the field of 2D materials with a particular focus on last five years. After a brief backgroundintroduction, we first discuss the major synthetic methods for 2D materials, including the mechanical exfoliation, liquid exfoliation, vapor phase deposition, and wet-chemical synthesis as well as phase engineering of 2D materials belonging to the field of phase engineering of nanomaterials(PEN). We then introduce the superconducting/optical/magnetic properties and chirality of 2D materials along with newly emerging magic angle 2D superlattices. Following that, the promising applications of 2D materials in electronics, optoelectronics, catalysis, energy storage, solar cells, biomedicine, sensors, environments, etc. are described sequentially. Thereafter, we present the theoretic calculations and simulations of 2D materials. Finally, after concluding the current progress, we provide some personal discussions on the existing challenges and future outlooks in this rapidly developing field.

关键词： Two-dimensional materials Transition metal dichalcogenides Phase engineering of nanomaterials electronics Optoelectronics Catalysis Energy storage and conversion

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