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Molecular hosts for triplet emitters in organic light-emitting diodes and the corresponding working principle

science China Chemistry 2010年第8期53卷 1679-1694页

作者： MI BaoXiu1,2,GAO ZhiQiang1,LIAO ZhangJin2,HUANG Wei2 & CHEN Chin Hsin3 1Jiangsu engineering center for Flat-Panel Displays & solid-state Lighting School of materials science & engineering,Nanjing University of Posts & Telecommunications,Nanjing 210046,China 2Key Laboratory for Organic electronics & Information Displays (KLOEID),Institute of Advanced materials (IAM),Nanjing University of Posts & Telecommunications,Nanjing 210046,China 3Display Institute,Microelectronics and Information Systems research center,National Chiao Tung University Hsinchu,Hsinchu,300 China 1. Jiangsu Engineering Center for Flat-Panel Displays & Solid-State Lighting School of Materials Science & Engineering Nanjing University of Posts & Telecommunications Nanjing 210046 China2. Key Laboratory for Organic Electronics & Information Displays (KLOEID) Institute of Advanced Materials (IAM) Nanjing University of Posts & Telecommunications Nanjing 210046 China3. Display Institute Microelectronics and Information Systems Research Center National Chiao Tung University Hsinchu Hsinchu 300 China

This paper summarizes the mechanism and routes for excitation of triplet emitters in dopant emission based phosphorescent organic light-emitting diodes (PhOLEDs),providing a comprehensive overview of recent progress in molecular hosts for triplet emitters in ***,based on the nature of different hosts,e.g.,hole transporting,electron transporting or bipolar materials,in which the dopant emitters can be hosted to generate phosphorescence,the respective device performances are summarized and *** are given to the relationships among the molecular structure,thermal stability,triplet energy,carrier mobility,molecular orbital energy level and their corresponding device performances.

关键词： phosphorescent organic light-emitting diodes (OLEDs) working principle electrophosphorescence hosts triplet emitter

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Doping dependence of spin dynamics in electron-doped Ba(Fe1−xCox)2As2

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Physical Review B 2010年第5期82卷 054515-054515页

作者： K. Matan S. Ibuka R. Morinaga Songxue Chi J. W. Lynn A. D. Christianson M. D. Lumsden T. J. Sato Neutron Science Laboratory Institute for Solid State Physics University of Tokyo 106-1 Shirakata Tokai Ibaraki 319-1106 Japan TRIP JST 5 Sanbancho Chiyoda Tokyo 102-0075 Japan NIST Center for Neutron Research National Institute of Standards and Technology Gaithersburg Maryland 20899 USA Department of Materials Science and Engineering University of Maryland College Park Maryland 20742 USA Oak Ridge National Laboratory Oak Ridge Tennessee 37831 USA

The spin dynamics in single crystal, electron-doped Ba(Fe1−xCox)2As2 has been investigated by inelastic neutron scattering over the full range from undoped to the overdoped regime. We observe damped magnetic fluctuations in the normal state of the optimally doped compound (x=0.06) that share a remarkable similarity with those in the paramagnetic state of the parent compound (x=0). In the overdoped superconducting compound (x=0.14), magnetic excitations show a gaplike behavior, possibly related to a topological change in the hole Fermi surface (Lifshitz transition) while the imaginary part of the spin susceptibility χ″ prominently resembles that of the overdoped cuprates. For the heavily overdoped, nonsuperconducting compound (x=0.24) the magnetic scattering disappears, which could be attributed to the absence of a hole Fermi-surface pocket observed by photoemission.

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Neutron diffraction studies on the multiferroic conical magnet Ba2Mg2Fe12O22

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Physical Review B 2010年第17期81卷 174418-174418页

作者： Shintaro Ishiwata Daisuke Okuyama Kazuhisa Kakurai Masakazu Nishi Yasujiro Taguchi Yoshinori Tokura Cross-Correlated Materials Research Group (CMRG) and Correlated Electron Research Group (CERG) RIKEN-ASI Wako 351-0198 Japan Department of Applied Physics and Quantum-Phase Electronics Center (QPEC) University of Tokyo Hongo Tokyo 113-8656 Japan Quantum Beam Science Directorate Japan Atomic Energy Agency Tokai Ibaraki 319-1195 Japan Institute for Solid State Physics University of Tokyo Kashiwanoha Kashiwa Chiba 277-8581 Japan Multiferroics Project ERATO Japan Science and Technology Agency (JST) University of Tokyo Tokyo 113-8656 Japan

Magnetic structure of a multiferroic Y-type hexaferrite Ba2Mg2Fe12O22 with helical-spin structures propagating along [001] below 195 K has been extensively studied, using polarized and unpolarized neutron diffractions under transverse magnetic fields B (⊥[001]) up to 4.5 T. At zero magnetic field, a longitudinal-conical spin state was found to emerge below about 50 K, which enables the low-B control of electric polarization P. The magnetic phase diagram was investigated as a function of transverse B and coexistence of several phases with different helical-spin periodicity was confirmed at low-B region. Furthermore, by using the polarized neutron diffraction under transverse B, we verified that the ferroelectric phase with the largest P value with a commensurate k0 vector of (0, 0, 3/2) has a transverse-conical spin structure, in which the spin component perpendicular to B shows every 90° rotation with translation along the k0 direction. The relation between the transverse-conical spin structure and P as a function of the transverse B was discussed in terms of the inverse Dzyaloshinskii-Moriya model.

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Braille Displays: A 4 V Operation, Flexible Braille Display Using Organic Transistors, Carbon Nanotube Actuators, and Organic Static Random‐Access Memory (Adv. Funct. Mater. 21/2011)

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Advanced Functional materials 2011年第21期21卷

作者： Kenjiro Fukuda Tsuyoshi Sekitani Ute Zschieschang Hagen Klauk Kazunori Kuribara Tomoyuki Yokota Takushi Sugino Kinji Asaka Masaaki Ikeda Hirokazu Kuwabara Tatsuya Yamamoto Kazuo Takimiya Takanori Fukushima Takuzo Aida Makoto Takamiya Takayasu Sakurai Takao Someya Department of Applied Physics The University of Tokyo 7‐3‐1 Hongo Bunkyo‐ku Tokyo 113‐8656 Japan Department of Electrical and Electronic Engineering The University of Tokyo 7‐3‐1 Hongo Bunkyo‐ku Tokyo 113‐8656 Japan Max Planck Institute for Solid State Research Heisenbergstr. 1 70569 Stuttgart Germany Research Institute for Cell Engineering National Institute of Advanced Industrial Science and Technology (AIST) Midorigaoka 1‐8‐31 Ikeda Osaka 563‐8577 Japan Functional Chemicals R&D Laboratories Nippon Kayaku Co. Ltd. 3‐26‐8 Shimo Kita‐ku Tokyo 115‐8588 Japan Department of Applied Chemistry Hiroshima University 1‐4‐1 Kagamiyama Higashi‐Hiroshima Hiroshima 739‐8527 Japan Functional Soft Matter Engineering Laboratory Advanced Science Institute RIKEN 2‐1 HirosawaWako Saitama 351‐0198 Japan Department of Chemistry and Biotechnology The University of Tokyo 7‐3‐1 Hongo Bunkyo‐ku Tokyo 113‐8656 Japan VLSI Design & Education Center The University of Tokyo 4‐6‐1 Komaba Meguro‐ku Tokyo 153‐8505 Japan Institute of Industrial Science The University of Tokyo 4‐6‐1 Komaba Meguro‐ku Tokyo 153‐8505 Japan Institute for Nano Quantum Information Electronics The University of Tokyo 4‐6‐1 Komaba Meguro‐ku Tokyo 153‐8505 Japan Core Research for Evolutional Science and Technology Sanban‐cho Bldg 4F 5 Sanban‐cho Chiyoda‐ku Tokyo 102‐0075 Japan

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Substrates Influence on the Structure and Static Electromagnetic Properties of FeCoB-SiO2 Thin Films

Substrates Influence on the Structure and Static Electromagn...

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2009 International Conference on Applied Superconductivity and Electromagnetic Devices(应用超导与电磁装置技术国际会议 ASEME 2009)

作者： L. Zhang Z. W. Zhu L. J. Deng Engineering Research Center of Electromagnetic Wave Absorbing Materials Ministry of Education School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology of China Chengdu China

The microstructure and electromagnetic properties of FeCoB-SiO2 thin films which were deposited on different substrates (silicon, glass and Mylar) by using magnetron sputtering were studied. X-Ray Diffraction revealed that FeCo nanocrystalline only precipitated in FeCoB-SiO2 thin films on silicon and glass substrates, and the FeCoB-SiO2 films on Mylar substrate were amorphous. The surface images obtained by atomic microscopy (AFM) indicated that films on Mylar substrate with biggest particle size (about 120-150 nm), and agglomerated particle was discovered. The static electromagnetic properties, including resistivity and saturation magnetization for the films on different substrates, had also been investigated. The films sputtered on glass showed highest resistivity (2140 μΩcm) and a biggest saturation magnetization (4 πMs = 13 kG).

关键词： static electromagnetic properties resistivity Mylar substrate amorphous

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Ferromagnetism and spin-glass transitions in the Heusler compounds Ru2−xFexCrSi

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Physical Review B 2009年第22期79卷 224423-224423页

作者： Masahiko Hiroi Tsugumi Rokkaku Kazuhisa Matsuda Toru Hisamatsu Iduru Shigeta Masakazu Ito Takuo Sakon Keiichi Koyama Kazuo Watanabe Shintaro Nakamura Tsutomu Nojima Tomohito Nakano Lin Chen Tetsuya Fujiwara Yoshiya Uwatoko Hirotaka Manaka Norio Terada Department of Physics and Astronomy Graduate School of Science and Engineering Kagoshima University Kagoshima 890-0065 Japan Center for Geo-Environmental Science Faculty of Engineering and Resource Science Akita University Tegata-Gakuenmachi Akita City 010-8502 Japan High Field Laboratory for Superconducting Materials Institute for Materials Research Tohoku University Katahira Sendai 980-8577 Japan Center for Low Temperature Science Tohoku University Katahira Sendai 980-8577 Japan Department of Physics Kyushu University Fukuoka 812-8581 Japan Institute for Solid State Physics University of Tokyo Kashiwanoha Kashiwa Chiba 277-8581 Japan Graduate School of Science and Engineering Yamaguchi University Yamaguchi 753-8512 Japan Department of Electrical and Electronics Engineering Graduate School of Science and Engineering Kagoshima University Kagoshima 890-0065 Japan

The results of a comprehensive study of the structural, magnetic, and magnetotransport properties of the Heusler compounds Ru2−xFexCrSi are presented. The Fe-rich compounds (x≥1.5) exhibit a usual ferromagnetic transition. The Ru-rich compound (x=0.1) does not show ferromagnetism but exhibits a peak in magnetic susceptibility at TN∗=30 K. Nevertheless, specific-heat measurements show that there is no antiferromagnetic transition at TN∗ nor at any other temperatures. With further decreasing temperature strong irreversible behavior occurs below a temperature Tg. It is proposed that these results can be interpreted as successive spin-glass transitions at TN∗ and Tg. The compounds with intermediate x (=0.3 and 0.5) are found to be ferromagnetic. Both the saturation magnetization and the Curie temperature TC increase with increasing x. However, being different from the Fe-rich compounds, hysteresis of the magnetization is observed and this suggests that the ferromagnetism has glassy character. In lower-temperature range fairly large negative magnetoresistance are observed. These results are suggestive of a magnetically inhomogeneous ferromagnetic state, that is, the formation of ferromagnetic clusters.

关键词： chromium alloys Curie temperature ferromagnetic materials iron alloys magnetic hysteresis magnetic susceptibility magnetic transitions magnetoresistance ruthenium alloys silicon alloys specific heat spin glasses

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Effects of high-dose Ge ion implantation and post-implantation annealing on ZnO thin films

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Chinese Physics B 2007年第4期16卷 1119-1124页

作者：薛书文祖小涛苏海桥郑万国向霞邓宏杨春容 Department of Applied Physics University of Electronic Science and Technology of China Chengdu 610054 China Department of Physics Zhanjiang Normal College Zhanjiang 524048 China Laser Fusion Research Center China Academy of Engineering Physics Mianyang 621900 China School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology of China Chengdu 610054 China

This paper reports that ion implantation to a dose of 1 ×10^17 ions/cm^2 was performed on c-axis-orientated ZnO thin films deposited on （0001） sapphire substrates by the sol-gel technique. After ion implantation, the as-implanted ZnO films were annealed in argon ambient at different temperatures from 600 - 900 ℃. The effects of ion implantation and post-implantation annealing on the structural and optical properties of the ZnO films were investigated by x-ray diffraction （XRD）, photoluminescence （PL）. It was found that the intensities of （002） peak and near band edge （NBE） exitonic ultraviolet emission increased with increasing annealing temperature from 600- 900 ℃. The defect related deep level emission （DLE） firstly increased with increasing annealing temperature from 600 - 750 ℃, and then decreased quickly with increasing annealing temperature. The recovery of the intensities of NBE and DLE occurs at ～850℃ and ～750℃ respectively. The relative PL intensity ratio of NBE to DLE showed that the quality of ZnO films increased continuously with increasing annealing temperature from 600 - 900 ℃.

关键词： ZnO thin films thermal annealing ion implantation photoluminescence

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Effects of High Temperature Anneals and 60Co Gamma Ray Irradiation on Strained Silicon-on-Insulator (sSOI)

Effects of High Temperature Anneals and 60Co Gamma Ray Irrad...

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IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

作者： K. Park M. Canonico G.K. Celler M. Seacrist J. Chan J. Gelpey K.E. Holbert S. Nakagawa M. Tajima D.K. Schroder School of Materials Center for Solid State Electronics Research Arizona State University Tempe AZ USA Freescale Semiconductor Inc. Tempe AZ USA Soitec US Peabody MA USA MEMC Electronics Materials Inc. Saint Peters MO USA Mattson Technology Canada Inc. Vancouver BC Canada Department of Electrical Engineering Arizona State University Tempe AZ USA Institute of Space and Astronautical Science Sagamihara Japan Department of Electrical Engineering Center for Solid State Electronics Research Arizona State University Tempe AZ USA

Strained silicon-on-insulator (sSOI) was exposed to high-temperature (1200-1350degC) annealing and high-dose 60 Co gamma-ray irradiation (51.5 kGy) to study the tenacity of the bond between the strained Si film and the underlying buried oxide. All samples were characterized by UV Raman, pseudo-MOSFET (psi-MOSFET) current-voltage, Hall mobility, and photoluminescence (PL) to verify any change in strain. UV Raman, PL and psi-MOSFET measurements show no strain relaxation for the high temperature annealed samples and only very slight relaxation for the gamma-ray irradiated samples. In previous studies, the stability of the strain with thermal processing and nano-patterning was analyzed with optical or X-ray methods.

关键词： Temperature Annealing Capacitive sensors Strain measurement Silicon on insulator technology Bonding Semiconductor films Hall effect Photoluminescence Stability analysis

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The domain structure and electric properties of double-side seed layers PT/PZT/PT thin films

The domain structure and electric properties of double-side ...

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18th International Symposium on Integrated Ferroelectrics (ISIF 2006)

作者： Wang, Longhai Yu, Jun Wang, Yunbo Gao, Junxiong Zhao, Suling Wang, Zhihong Zeng, Huizhong Department of Electronic Science and Technology Huazhong University of Science and Technology Wuhan 430074 China Center for Materials Research and Analysis Wuhan University of Technology Wuhan 430070 China School of Microelectronics and Solid State Electronics University of Electronic Science and Technology of China Chengdu 610054 China

The multilayer PbTiO3/PbZr0.3Ti0.7O3/PbTiO3(PT/PZT/PT) thin films were prepared by a Sol-Gel method on the Pt(111)/Ti/SiO2/Si(100) substrate for FeRAM application. The XRD patterns exhibits a perfect perovskite-phase with strong (111)-preferred orientation. The domain structures were investigated by scanning force microscopy. The out-of-plane polarization (OPP), in-plane polarization (IPP), the OPP amplitude and OPP phase images were obtained. The domain of the films has a complex structure with c-domain and deviated - c-domain which direction deviated from the vertical direction of surface of the film. The complex domain structure is related to the orientation of the crystal grains in the film. The results of ferroelectric, fatigue, dielectric and leakage current density indicate that the thin film has a better property. It has larger saturation polarization Pmax of 57.6 C/cm2 at an applied voltage of 10 V, higher remnant polarization Pr of 32.3 C/cm2 for a the conceive voltage (Vc) of 2.5 V. After 1010 cycles, it still has more than 80% remnant polarization. The dielectric constants decreased with the frequency increased, and the decrease became slightly up to 1 MHz. The dielectric loss increased with the frequency increased, and there are no abrupt changes in the scan region. The leakage current mechanism of the thin film can be modeled in terms of SCLC theory.

关键词： Thin films

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Developing an atomic-level understanding of the mechanisms that govern CO2 sequestration mineral carbonation reaction processes

Developing an atomic-level understanding of the mechanisms t...

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2005 TMS Annual Meeting

作者： McKelvy, Michael J. Chizmeshya, Andrew V. G. Diefenbacher, Jason Béarat, Hamdallah Carpenter, R.W. Wolf, George Gormley, Deirdre Center for Solid State Science Arizona State University Tempe AZ 85287 United States Science and Engineering of Materials Graduate Program Arizona State University Tempe AZ 85287 United States Department of Chemistry and Biochemistry Arizona State University Tempe AZ 85287 United States

Mineral carbonation is an emerging CO2 sequestration candidate technology, which produces environmentally benign and geologically stable materials. The primary challenge is economically viable process development. Serpentine and olivine minerals are candidate feedstock materials of interest, due to their wide availability, low-cost, and rapid mineral carbonation potential. Cost-effectively enhancing their carbonation reactivity is critical to reducing mineral sequestration process cost. We will discuss our recent research into the mechanisms that govern serpentine and olivine mineral carbonation reaction processes, including in situ observations of the mineral carbonation process and a novel mechanistic approach to enhance carbonation reactivity that avoids the cost of mineral activation. Our goal is to develop the necessary atomic-level understanding to engineer improved carbonation materials and processes to reduce process cost.

关键词： Chemical reactions

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