作者：
T. S. CaleG. B. RauppDepartment of Chemical
Bio and Materials Engineering and Center for Solid State Electronics Research Arizona State University Tempe Arizona 85287‐6006
The integro‐differential equations which describe free molecular flow in long rectangular trenches in the absence of deposition and to both low pressure chemical vapor deposition (LPCVD) and physical vapor deposition...
The integro‐differential equations which describe free molecular flow in long rectangular trenches in the absence of deposition and to both low pressure chemical vapor deposition (LPCVD) and physical vapor deposition (PVD) are derived. A pseudosteady state assumption is implicit in the formulation, i.e., the feature dimensions change slowly relative to the time required for the flux to redistribute in response to the changes. Numerical solution of the governing equations provides film and deposition rate profiles as a function of deposition time until the trench is completely filled. Solutions are discussed for selected values of the sticking coefficient from zero to unity. The calculated film profiles are consistent with empirical results which typically show poor uniformity in PVD and step coverage increasing with decreasing sticking coefficient in LPCVD. Film profiles compare well with Monte Carlo based simulations of deposition processes.
作者：
T. S. CaleG. B. RauppChemical
Bio and Materials Engineering Department and Center for Solid State Electronics Research Arizona State University Tempe Arizona 85287‐6006
A Clausing‐like integral equation is derived which applies to both low pressure chemical vapor deposition (CVD) and physical vapor deposition (PVD) in cylindrical contact holes; i.e., over the full range of sticking ...
A Clausing‐like integral equation is derived which applies to both low pressure chemical vapor deposition (CVD) and physical vapor deposition (PVD) in cylindrical contact holes; i.e., over the full range of sticking coefficient (0–1). A steady state assumption is implicit in the formulation. In the absence of film deposition, the flux to the surface is spatially uniform. Analytical expressions are presented for the initial deposition profiles for PVD (unity sticking coefficient). Numerical inversions of the integral equations provide initial deposition profiles for CVD (low sticking coefficients). Initial deposition profiles exhibit poor uniformity in PVD and high uniformity in CVD, in agreement with empirical evidence. The results provide a test for proposed Monte Carlo simulations which are based on the same assumptions.
TiSi2 thin films were formed on crystalline and amorphous silicon substrates obtained by Ge+ and Ge++B+ implantation and optional subsequent annealing. Transmission electron microscopy, X-ray diffraction and electrica...
TiSi2 thin films were formed on crystalline and amorphous silicon substrates obtained by Ge+ and Ge++B+ implantation and optional subsequent annealing. Transmission electron microscopy, X-ray diffraction and electrical resistivity analysis revealed that the silicide formed on amorphous Si has more tendency to have a C54 structure rather than the metastable C49 structure. Also, the grain size is smaller and the silicide/silicon interface is smoother for silicides formed on amorphous Si. Comparison between implanted and unimplanted, (100) and (111) Si substrates indicated that the origin of the differences can be attributed to the latent energy stored in amorphous silicon, which favors the silicide with fine grains and promotes the transformation to the C54 phase. Non-random distribution of planar defects in C49 grains has been observed by plan-view TEM. A proposal that these defects are transformation stress induced microtwins is presented.
Robust room temperature ferromagnetism is obtained in single phase Gallium Phosphide doped with Cu2+ prepared by simple solidstate reaction route. The saturation magnetization at 300 K is 1.5 × 10-2 emu/g and th...
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