Encapsulated Ag(Ti) films on oxidized silicon were obtained by nitridation of Ag(19 at.% Ti) alloys in a flowing NH 3 ambient at temperatures between 400-700°C for various times. Upon annealing at temperatures ...
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Encapsulated Ag(Ti) films on oxidized silicon were obtained by nitridation of Ag(19 at.% Ti) alloys in a flowing NH 3 ambient at temperatures between 400-700°C for various times. Upon annealing at temperatures ≥ 350°C Ti segregates to the surface and alloy/SiO 2 interface. At the free surface Ti reacts with the ammonia to form a TiN(O) surface layer. The Ti that diffuses to the interface dissociates the SiO 2 and subsequently reacts with the freed Si and O to form a TiO/Ti 5 Si 3 interfacial bilayer structure. RBS data indicated that the dealloying and hence the encapsulation increases with increasing temperature up to 600°C, whereafter it levels off. Residual Ti concentrations of ~1 at.% was measured at temperatures ≥ 600°C. Resistivity values of ~3 μΩ-cm were measured in the encapsulated Ag alloys. The results suggest that resistivity is controlled by the residual Ti concentration.
Single crystal Si0.63Ge0.36C0.01 and amorphous Si0.65Ge0.27C0.08 layers have been oxidized in a wet ambient at 700 °C and 900 °C. The oxide growth has been studied using Rutherford backscattering spectrometr...
Single crystal Si0.63Ge0.36C0.01 and amorphous Si0.65Ge0.27C0.08 layers have been oxidized in a wet ambient at 700 °C and 900 °C. The oxide growth has been studied using Rutherford backscattering spectrometry and transmission electron microscopy. A reference sample of Si0.63Ge0.37 was also oxidized in order to determine the influence of C on the oxidation behavior. The lower C content alloy behaved similar to the SiGe alloy. Uniform Si1-xGexO2 was obtained at 700 °C whereas SiO2 was formed at 900 °C, and Ge piled up underneath the oxide. In both cases, C was not detected in the oxide layer. The amorphous Si0.65Ge0.27C0.08 alloy behaved significantly different at both oxidation temperatures in comparison with the crystalline Si0.63Ge0.36C0.01 and Si0.63Ge0.37. Negligible oxidation occurred at 700 °C whereas SiO2 was obtained at 900 °C and the rejected Ge distributed uniformly throughout the SiGeC alloy. It is proposed that fast Ge diffusion during oxidation at 900 °C resulted from diffusion at grain boundaries, since crystallization of the amorphous SiGeC layer occurred in conjunction with oxidation, leading to nucleation of ∼5 nm nanocrystals.
Cu(90 nm)/Ti(20 nm) bilayers and Cu(Ti 27 at.%) alloy films were deposited on SiO2 and annealed in an NH3 ambient at temperatures 400–700° C for 30 min. During annealing Ti segregated to both the free surface an...
Cu(90 nm)/Ti(20 nm) bilayers and Cu(Ti 27 at.%) alloy films were deposited on SiO2 and annealed in an NH3 ambient at temperatures 400–700° C for 30 min. During annealing Ti segregated to both the free surface and the alloy/SiO2 interface. At the surface Ti reacted with NH3 to form TiN, whereas at the interface the Ti reacted with the SiO2 to form a TiO/Ti5Si3 structure. High resolution energy dispersive x-ray analysis revealed the presence of interfacial Cu between the Ti-silicide and Ti-oxide layers at temperatures greater than 450°C. Using Cu-Ti alloy films enhanced the Si02 consumption rate by a factor of 3-4 compared to that of pure Ti. It is suggested that the interfacial Cu is responsible for the increased rate. It is plausible that an interfacial Cu2O component has a catalytic effect on the Ti- SiO2 reaction.
A radius of curvature technique has been employed to measure the in-plane biaxial stress in the superficial silicon layer and the buried oxide layer in a silicon-on-insulator (SOI) wafer. The wafer was processed by th...
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A radius of curvature technique has been employed to measure the in-plane biaxial stress in the superficial silicon layer and the buried oxide layer in a silicon-on-insulator (SOI) wafer. The wafer was processed by the separation by implanted oxygen (SIMOX) method. The stresses with and without the formation of TiSi2 will be presented.
作者：
Tonjes, David J.Heil, James H.Black, John A.David J. Tonjes is a doctoral candidate in coastal oceanography at the Marine Sciences Research Center
University at Stony Brook through its Waste Management Institute (Waste Management Institute Marine Sciences Research Center University at Stony Brook 11794–5000). Under a grant from the Town Board he is a technical adviser to the commissioner of waste management of the town of Brookhaven New York in solid waste planning regulatory compliance and environmental site monitoring. Tonjes has a B.A. in liberal arts from St. John's College an M.S. in computer science from New York Institute of Technology and an M.S. in technological systems management from the University at Stony Brook. James H. Heil is commissioner of waste management for the town of Brookhaven (Department of Waste Management
Town of Brookhaven 3233 Rte. 112 Medford NY 11763). Heil received a B.S. from Manhattan College and an M.S. from New York University in civil engineering and is a licensed professional engineer in New York. He is a former president of the New York State Solid Waste Management Association. John A. Black is the coordinator of the environmental science program at Suffolk County Community College (Environmental Science Program
Suffolk County Community College Selden NY 11784). He is currently the chair of the Ecology Committee of the Pine Barrens Advisory Committee for Suffolk County and is a member of the Suffolk County Pine Barrens Review Commission. Black received a B.S. in chemistry from Adephi University an M.S. in public administration from the University at Stony Book an M. S. from Hofstra University and a Ph. D. from Adlephi in marine sciences.
Stiff diagrams arc a multivariate method of analysis used to describe the chemical state of ground water. The use of Stiff diagrams to describe multiconstituent contamination sites, such as landfills, has distinct adv...
Vertical zone melt (VZM) bulk GaAs ingots have been zone refined (ZR) and zone leveled (ZL) to reduce EL2 deep donor levels and impurity concentrations with the intent of improving properties for gamma ray detectors. ...
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Vertical zone melt (VZM) bulk GaAs ingots have been zone refined (ZR) and zone leveled (ZL) to reduce EL2 deep donor levels and impurity concentrations with the intent of improving properties for gamma ray detectors. ZR and ZL GaAs ingots had background impurity levels and deep donor EL2 concentrations near or below detectable limits. The crystallinity of the material was slightly superior to commercial liquid encapsulated Czochralski (LEC) material, and nearly equivalent to commercial vertical gradient freeze (VGF) material. However, the homogeneity of the electrical properties for the ZL and ZR VZM material was inferior to commercially available material. Resulting gamma ray spectra was poor from detectors fabricated with the ZL or ZR VZM material.
Cu(Ti 27 at. %) and Cu(Cr 26 at. %) codeposited on silicon dioxide substrates were annealed in a flowing NH3 ambient at 400 - 600°C for 30 min. The Ti segregates to both the surface to form a TiN(O) layer and to ...
Cu(Ti 27 at. %) and Cu(Cr 26 at. %) codeposited on silicon dioxide substrates were annealed in a flowing NH3 ambient at 400 - 600°C for 30 min. The Ti segregates to both the surface to form a TiN(O) layer and to the alloy/SiO2 interface to form a Ti-oxide/Ti-silicide bilayer. The Cr seems to migrate only to the free surface to form a CrNx layer. A 45 nm - thick Al film was deposited after nitridation, whereupon a second anneal was performed to evaluate these nitride layers as diffusion barriers. It was found that the Ti-nitride was stable up to 500°C as compared to Cr-nitride at 600°C.
We studied interfacial phase formation between copper and copper-alloy films on SiO2 in order to understand how to improve adhesion. CuCr and CuTi alloy and bilayer films on SiO2 were annealed from 400-600°C for ...
We studied interfacial phase formation between copper and copper-alloy films on SiO2 in order to understand how to improve adhesion. CuCr and CuTi alloy and bilayer films on SiO2 were annealed from 400-600°C for 30 min in an N2 + H2 (5%) ambient. The bilayer systems exhibited refractory metal migration from the interface to the surface where they oxidized. In the CuTi bilayer system, an oxidized interfacial Ti layer was observed. Both CuCr and CuTi alloy systems exhibited refractory metal segregation to the interface and surface. Rutherford backscattering spectrometry and Auger electron spectroscopy were used for elemental depth profiling.
Energy selected imaging with a Zeiss 912 ω-filter TEM was used to examine grain boundary solute distributions in an Si3N4/SiC(w) ceramic densified with Y2O3 + Al2O3 sintering aid. These results are compared to bounda...
Energy selected imaging with a Zeiss 912 ω-filter TEM was used to examine grain boundary solute distributions in an Si3N4/SiC(w) ceramic densified with Y2O3 + Al2O3 sintering aid. These results are compared to boundary region solute distributions in the same materials determined by field emission small probe electron energy loss spectroscopy and related methods. The intrinsic higher incident flux of the FEG small probe methods renders them the most useful for high spatial resolution local chemical width measurement. Energy selected imaging is fast and relatively simple for determining elemental distributions in boundaries at low magnifications. The methods are complementary.
Copper films generally exhibit poor adhesion on dielectrics. It has been shown that the addition of refractory metals promotes adhesion via an interfacial reaction or better wetting to the dielectric. We investigate t...
Copper films generally exhibit poor adhesion on dielectrics. It has been shown that the addition of refractory metals promotes adhesion via an interfacial reaction or better wetting to the dielectric. We investigate the adhesion of Cu-refractory metal (Cr, Ti) alloy films and bilayers on various silicon oxide substrates (SiO2, PSG, BPSG) after annealing in the temperature range 400-600°C by conventional furnace using N2/H2 forming gas. Rutherford backscattering spectrometry (RBS) was used to determine the interfacial reaction characteristics. The efficacy of a variation of the standard Scotch™ tape testing was evaluated. We found that the combined Scotch™ tape/scribe adhesion test revealed excellent qualitative bonding information and could be correlated well to RBS characterization. We were able to optimize the sample configurations and chemical compositions to achieve the best adhering film.
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