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A study of ultra shallow junctions by diffusion from self-aligned silicides 19

19th European solid state Device Research Conference, ESSDERC 1989

作者： Jiang, H. Osburn, C.M. Xiao, Z.-G. Smith, P. McGuire, G. Rozgonyi, G.A. Dept. of Electrical and Computer Engineering North Carolina State University RaleighNC United States Royal Institute of Technology Electrum Solid State Electronics Kista Sweden Microelectronics Center of North Carolina Box 12889 Research Triangle ParkNC United States Dept. of Materials Science North Carolina State University RaleighNC United States

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STUDY OF LOW-ENERGY ION DAMAGE AT THE Si/SiO2 INTERFACE

STUDY OF LOW-ENERGY ION DAMAGE AT THE Si/SiO2 INTERFACE

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The Second International Conference on solid state and Integrated Circuit Technology

作者： M.H.Chu S.Ashok Cypress Semiconductors San JoseCAUSA. Center for Electronic Materials and Processing and Engineering Science Program The Pennsylvania State University University ParkPA 16802USA

The influence of low-energy ion damage on the Si/SiO interface has been studied with atomic hydrogen and Ar implantation into device-quality thermal SiO grown on ptype *** principal effects of H implantation are creation of fixed positive charges and interface traps,neutralization of acceptor dopants in Si by H and change in the SiO dielectric *** study also includes recovery of damage by thermal anneal as well as Ar ion implantation damage,and is of interest in assessing the influence of ionassisted processing on the Si/SiO interface.

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A Study of Ultra Shallow Junctions by Diffusion from Self-aligned Silicides

A Study of Ultra Shallow Junctions by Diffusion from Self-al...

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European Conference on solid-state Device Research (ESSDERC)

作者： H. Jiang C.M. Osburn Z-G. Xiao P. Smith G. McGuire G.A. Rozgonyi Solid State Electronics Royal Institute of Technology Kista Sweden Department of Electrical and Computer Engineering North Carolina State University Raleigh NC USA Microelectronics Center of North Carolina NC USA Department Materials Science North Carolina State University Raleigh NC USA Dept. of Materials Science North Carolina State University Raleigh NC 27695 USA

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Poster contributions

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Hyperfine Interactions 1989年第1期47卷 433-589页

作者： A. Houlton J. Silver J. Guillin M. H. Desbois M. Lacoste D. Astruc F. Varret H. A. Goodwin D. Onggo Y. Maeda Y. Takashima H. Ohshio K. Toriumi M. Sorai P. Poganiuch P. Gütlich L. Wiehl U. Krafczyk A. Hauser H. Spiering M. Bardhan T. Birchall C. S. Frampton P. Kapoor Marion Tiedtke Gerhard Wortmann D. Petridis N. Gangas A. Simopoulos A. Kostikas N. H. J. Gangas A. Simgpoulos A. Meagher M. Billenstein R. Doerfler O. Leupold D. L. Nagy G. Ritter Gary J. Long Charles Gleitzer J. M. Fiddy I. Hall F. Grandjean G. J. Long U. Russo Z. Kucharski J. Suwalski Cz. Budrowski J. Vetrone Y. Calage R. Tortevois H. Fourari F. J. Berry M. I. Sarson C. Meyer K. Nagorny M. Łukasiak J. Panfil A. Bermudez R. Wordel F. E. Wagner A. A. Tyrer Y. Yoshida P. Fratzl W. Miekeley G. Vogl S. M. Dubiel Z. Homonnay K. Süvegh Cs. Szeles A. Vertes A. S. Saleh S. H. Mahmood J. E. Frackowiak R. Kmieć A. Z. Hrynkiewicz K. Krolas K. Tomala W. Adlassnig W. Potzel J. Moser W. Schiessl U. Potzel C. Schäfer M. Steiner G. M. Kalvius David W. Allen John S. Brooks Gavin L. Williams T. Nishida S. Saruwatari M. Hans G. K. Wolf M. Ghafari W. Keune C. T. Limbach U. Gonser A. Pösinger M. Reissner W. Steiner M. Kopcewicz S. M. Fries W. Zych D. Gryffroy R. E. Vandenberghe E. De Grave B. Huck J. Landes J. Hesse A. Labarta X. Obradors J. Tejada J. Pebler J. Pszczola K. Krop J. Zink Fernande Grandjean Dwayne E. Tharp O. Alan Pringle William J. James W. Lottermoser Elke Baum W. Treutmann G. Amthauer M. M. Abd-Elmeguid K. Gaebler W. Ludorf H. Micklitz R. D. Taylor V. Manns B. Scholz K. P. Schletz M. Braun E. F. Wassermann M. B. Madsen S. Linderoth S. Mørup M. D. Bentzon J. M. Knudsen E. Murad U. Schwertmann N. Choleva B. Lundgreen C. T. Jacobsen H. G. Jensen M. Olsen O. Kruse T. Ericsson U. Wagner S. v. Brandis H. Müller-Karpe J. Riederer M. Tellenbach C. Ulbert D. Hanzel Darko Hanzel H. Bilinski V. Nöthig G. Wiesinger S. S. Ismail P. Bottig H. H. A. Smit R. C. Thiel L. J. De Jongh S. Wells S. W. Charles A. D. Alhasan J. M. Williams A. Krämer J. Jing J. Van Wonterghem M Department of Chemistry and Biological Chemistry University of Essex Wivenhoe Park England UA-CNRS 807 Université du Maine Le Mans Cedex France UA-CNRS 35 Université Bordeaux I Talence Cedex France School of Chemistry University of New South Wales Kensington Australia Department of Chemistry Faculty of Science Kyushu University Fukuoka Japan Institute for Molecular Science Aichi Japan Chemical Thermodynamics Laboratory Faculty of Science Osaka University Osaka Japan Institut für Anorganische Chemie und Analytische Chemie Johannes-Gutenberg-Universität Mainz FRG Department of Chemistry McMaster University Hamilton Canada Institut für Atom- und Festkörperphysik Freie Universität Berlin Berlin 33 Germany Department of Physics NRC “Demokritos” Athens Greece “Demokritos” National Research Center for Physical Sciences Institute of Materials Science Aghia Paraskevi Attikis Greece Demokritos NRCPS Aghia Paraskevi Attikis Greece Athens Greece Laboratory of Applied Physics Technical University of Denmark Lyngby Denmark Adran Ffiscg CPGC Bangor G.B. Physikalisches Institute Universität Erlangen-Nürnberg Erlangen FRG Robert Bosch GmbH Nürnberg FRG Department of Chemistry University of Missouri-Rolla Rolla USA Department of Physics University of Liverpool Liverpool UK Departments of Chemistry Physics and the Graduate Centre for Materials Research University of Missouri-Rolla Rolla USA Laboratoire de Chimie du Solide Minéral Associé au CNRS No. 158 Service de Chimie Minérale Université de Nancy I Vandoeuvre-lez-Nancy Cedex France Institute de Physique Université de Liège Belgium Dipartimento di Chimica Inorganica Metallorganica ed Analytica Universita di Padova Italy Institute of Atomic Energy Otwock Poland Technical University of Warsaw Noakowskiego 3 Poland Department of Chemistry University of Birmingham Birmingham UK Institute of Physical Chemistry University of Hamburg Hamburg 13 FRG Laboratoire de Spectrométrie Physique Université de Grenob

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CONTROL OF ION-BOMBARDMENT ENERGY IN THE LOW-TEMPERATURE DEPOSITION OF HIGHLY TRANSPARENT AND CONDUCTING IN2O3 AND ZNO THIN-FILMS BY ACTIVATED REACTIVE EVAPORATION

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JOURNAL OF VACUUM science & TECHNOLOGY A-VACUUM SURFACES AND FILMS 1988年第3期6卷 2015-2019页

作者： LAU, WS Center for Electronic Materials and Devices Engineering Science Program The Pennsylvania State University University Park Pennsylvania 16802

Highly transparent and conducting In2O3 and ZnOfilms have been successfully deposited at temperatures as low as 2?V? 1?s? 1) for In2O3. However, for the case of ZnO, it was found that there is no such a minimum ion bo... 详细信息

Highly transparent and conducting In₂O₃ and ZnOfilms have been successfully deposited at temperatures as low as <70?°C by activated reactive evaporation. Ways to control the anode‐to‐film potential, which can be used as a rough measure of ion bombardment energy, are discussed. It was found that a minimum anode‐to‐film voltage of ～20 V is necessary for high mobility (～18 cm²?V^? ¹?s^? ¹) for In₂O₃. However, for the case of ZnO, it was found that there is no such a minimum ion bombardment energy. X‐ray diffraction data on low‐temperature deposited In₂O₃ and ZnOfilms are also presented, showing that ZnOfilms are in general easier to crystallize than In₂O₃films. A postulate was also made that microvoids can be filled up more easily in the case of zinc oxide deposition because the low sticking coefficient of zinc allow its vapor to go around corners more easily and thus the process is not pure physical vapor deposition but has a substantial component that behaves like a surface rate‐limited chemical vapor deposition process. Hence the explanation is simply that very little energy is necessary to get ZnOfilms with an electron mobility of ～40 cm²?V^? ¹?s^? ¹ by activated reactive evaporation. This is, however, not the case for sputtering and thus this may have an important implication that there can be less ion damage on some sensitive substrates for low‐temperature deposition of ZnO by activated reactive evaporation.

关键词： Zinc oxide films Sputter deposition II-VI semiconductors Thin films Evaporation

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THE USE OF FAR-INFRARED CERAMIC HEATERS FOR RADIATION HEATING OF GLASS IN VACUUM DEPOSITION PROCESSES

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JOURNAL OF VACUUM science & TECHNOLOGY A-VACUUM SURFACES AND FILMS 1988年第1期6卷 163-165页

作者： LAU, WS Center for Electronic Materials and Devices Engineering Science Program The Pennsylvania State University University Park Pennsylvania 16802

W. S. Lau; The use of far‐infrared ceramic heaters for radiation heating of glass in vacuum deposition processesThe use of far‐infrared ceramic heaters for radi

关键词： Ceramics Heaters Vacuum deposition

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Direct Measurement of Counterion Distribution around Cylindrical Micelles by Small-Angle X-Ray Scattering

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Physical Review Letters 1988年第5期61卷 645-645页

作者： C. F. Wu S. H. Chen L. B. Shih J. S. Lin Department of Nuclear Engineering and Center for Materials Science and Engineering Massachusetts Institute of Technology Cambridge Massachusetts 02139 Polymer Research Department S. C. Johnson & Son Inc. Racine Wisconsin 53403 Solid State Division Oak Ridge National Laboratory Oak Ridge Tennessee 37831

Small-angle x-ray scattering was used to measure the distribution of Cs+ counterions around the surface of cylindrical micelles. The scattering intensity distribution was compared with that calculated by use of the analytical solutions of a nonlinear Poisson-Boltzmann (PB) equation in a cell model. Quantitative agreement was obtained for the cases without added salt. The addition of other monovalent salts did not modify the counterion distribution significantly in accordance with the prediction of the numerical solution of the PB equation.

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OUT-OF-PRODUCTION MICRO-ELECTRONICS - AN ACHILLES HEEL OF DEFENSE SYSTEMS

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NAVAL ENGINEERS JOURNAL 1988年第5期100卷 69-72页

作者： MACKENZIE, CM WOOTTEN, R HOY, K NEELY, J KOSCO, D SMITH, W C. Malcolm Mackenzie:is the Materials and Parts Availability Control program manager at U.S. Army Laboratory Command Adelphi Md. Mr. Mackenzie has a B.S. degree in mechanical engineering from Northwestern University an M.S. degree in the same field from the University of Michigan and an M.B.A. from East Texas State University. Richard Wootten:is project officer of the U.S. Army Material Command's Materials and Parts Availability Control Information Data System Project Adelphi Md. Mr. Wootten holds an associate's degree in mechanical engineering from Northern Virginia Community College and a Bachelor of Science in Electronics Engineering from The University of Alabama. Kevin Hoy:is manager of the Microelectronics Obsolescence Management Program at the Naval Avionics Center Indianapolis. Mr. Hoy holds both bachelor and master of science degrees in mathematics from Purdue University. James Neely:is leader of the Materials Management Team Industrial Materials Division in the Directorate of Manufacturing Air Force Systems Command Dayton Ohio. Mr. Neely holds a bachelor's degree in political science from The University of Georgia and a master of science degree in public administration from The University of Missouri. Don Kosco:is an electronics engineer currently involved with introducing new technologies into weapons systems. He is in the Directorate of Reliability Maintainability and Technology Policy HQ Air Force Logistics Command Dayton Ohio. Mr. Kosco holds a bachelor of engineering degree from Widener University a master's in systems engineering from The Air Force Institute of Technology and an MBA from the University of Texas at San Antonio. William Smith:is head of the Plans Branch in the Office of Policy and Plans Defense Electronics Supply Center (DESC) Dayton Ohio. He was for many years manager ofDESC's Diminishing Manufacturing Sources (DMS) Program. Mr. Smith holds a bachelor of arts degree in political science from Indiana University.

Both the timely manufacture of defense systems and their subsequent on-line operability depend upon the availability of component parts. The growing problem of microelectronic component nonavailability is casting a shadow over logistics support to these systems. This paper will discuss the causes of the problem and provide some examples of cases confronted by the DoD logistics community. It will also identify some actions which have been taken in the past to manage the issue as well as initiatives now underway. Finally it will look at what lies ahead.

关键词： Microelectronics

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HIGHLY TRANSPARENT AND CONDUCTING ZINC-OXIDE FILMS DEPOSITED BY ACTIVATED REACTIVE EVAPORATION

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JOURNAL OF ELECTRONIC materials 1987年第3期16卷 141-149页

作者： LAU, WS FONASH, SJ 1. Center for Electronic Materials and Devices Engineering Science Program The Pennsylvania State University 16802 University Park PA

Highly transparent and conducting undoped zinc oxide films have been obtained with a best resistivity of ～1.1 × 10-3 Ω cm, a carrier density of ～1.5 × 1020 cm?3 and a mobility of ～38 cm2V?1s ?1. These we... 详细信息

Highly transparent and conducting undoped zinc oxide films have been obtained with a best resistivity of ～1.1 × 10^-3 Ω cm, a carrier density of ～1.5 × 10²⁰ cm^?3 and a mobility of ～38 cm²V^?1s ^?1. These were produced by activated reactive evaporation at a deposition rate of 2 to 8?/s with a substrate temperature ≤200° C. The films deposited by this process were found to have resistivities that were thickness independent and also were relatively insensitive to deposition parameters. In terms of conductivity, it was found that films deposited at higher temperatures (T > 300°+ C) were always inferior to the films deposited below 200° C. High temperature vacuum annealing (350° C) significantly degraded the resistivity of the undoped films deposited at low temperature; this was attributable to a drop in both the electron concentration and the mobility. Aluminum doping was found to be able to stabilize the electron concentration while the drop in mobility was found to be related to the choice of substrate.

关键词： Zinc oxide films highly transparent films conducting films high temperature stability

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PREPARATION OF HIGH-TC SUPERCONDUCTING OXIDES BY THE AMORPHOUS CITRATE PROCESS

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JOURNAL OF THE AMERICAN CERAMIC SOCIETY 1987年第12期70卷 C375-C377页

作者： CHU, C DUNN, B Department of Materials Science and Engineering Solid State Science Center University of California Los Angeles California 90024 Member the American Ceramic Society.

The high-T c superconducting oxide Yba 2 Cu 3 O 7–y has been prepared by the amorphous citrate process. A citrate-nitrate solution was prepared at room temperature and dehydrated at around 80°C to yield a solid precursor material. The precursor was fired to high temperature to form the desired compound. The decomposition mechanism was studied with thermogravimetric analysis and X-ray diffraction. Intermediate products were formed during the decomposition reactions. Nearly phase-pure Yba 2 Cu 3 O 7-y powders were obtained by firing the precursor in air to 900°Cfor2 h. Sintered samples were typically over 90% dense and exhibited good superconducting properties.

关键词： SUPERCONDUCTING materials

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