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IEEE Electron Device Letters 2024年第6期45卷 964-967页

作者： Qi, Wei Zhou, Feng Ma, Teng Xu, Weizong Zhou, Dong Ren, Fangfang Chen, Dunjun Zhang, Rong Zheng, Youdou Lu, Hai Nanjing University School of Electronic Science and Engineering Nanjing210093 China China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou511370 China

Achieving high-performance fully-vertical GaN devices on low-cost and large-scale foreign substrates are highly attractive for the development of device technology. In this work, by performing pulsed laser lift-off and laser annealing techniques, high-performance fully-vertical GaN Schottky barrier diodes (SBDs) with superior N-face ohmic contact characteristics are demonstrated. The resulting device exhibits low specific contact resistivity of 3.51×10-5Ω · cm2 and differential specific on-resistance of 0.58 mΩ· cm2, as well as intact anode Schottky contact. In particular, this device demonstrates robust electrothermal robustness, such as the largest surge current density of 15.6 kA/cm2 to date. Moreover, by implementing N-implanted termination, the breakdown voltage of the device is remarkably enhanced from 240 to 523 V, which is competitive with the state-of-the-art quasi-vertical SBDs. These results reveal the notable potential of pulsed laser lift-off/annealing combined with N-implanted termination for realizing fully-vertical devices. © 1980-2012 IEEE.

关键词： Anodes

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New Convenient Composite Probes With 0°/180° Hybrid Couplers For Near-field Scanning Measurements

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IEEE Sensors Journal 2025年第11期25卷 18982-18988页

作者： Wang, Lei Wang, Rui-Qi Luo, Chengyang Lu, Guoguang CEPREI Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China Shaanxi University of Science and Technology School of electronic information and artificial intelligence China

In this work, we propose two new convenient composite probes with 0°/180° hybrid couplers for near-field scanning measurements. The proposed probes (denoted as A and B) integrate a U-shaped loop as the driven element and a parallel U-shaped loop as the parasitic element, two different 0°/180° hybrid couplers, two interconnected vias, and a pair of 50 Ω strip-lines. The design leverages the driven and parasitic U-shaped loops to concurrently detect electric-field (E-field) and magnetic-field (H-field) components and improve detection sensitivity, thereby extending the probes' capability to capture a wider spectrum of electromagnetic fields. The integrated 0°/180° hybrid couplers enable precise differentiation and superposition of outputs from the driven loop, effectively isolating the E-field and H-field responses. Crucially, this architecture permits direct connectivity to oscilloscopes, eliminating dependence on vector network analyzers (VNAs) for electromagnetic component sensing. The design, simulation, measurement, and characterization of two Probes A and B are detailed. Measurement results demonstrate these probes' enhanced sensitivity and dual-field measurement capability. The ability of directly link to oscilloscopes, bypassing the need for a VNA, makes these probes highly suitable for practical interference source location testing. © 2001-2012 IEEE.

关键词： Electric field measurement

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Electromagnetically-induced-absorption-like ground state cooling in a hybrid optomechanical system

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Chinese physics B 2025年第4期34卷 413-421页

作者： Yaoyong Dong Xuejun Zheng Denglong Wang Peng Zhao School of Electromechanical Engineering Guangdong University of TechnologyGuangzhou 510003China School of Mechanical Engineering and Mechanics Xiangtan UniversityXiangtan 411105China School of Physics and Optoelectronics Xiangtan UniversityXiangtan 411105China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510610China

We present a scheme for the electromagnetically-induced-absorption(EIA)-like ground state cooling in a hybrid optomechanical system which is combined by two-level quantum systems(qubits)and a high-Q optomechanical *** the weak qubit-cavity coupling,the system exhibits an EIA-like effect and this effect is caused by quantum destructive interference that is distinct from the conventional EIA effect driven by quantum constructive *** importantly,the EIA-like cooling mechanism can significantly enhance the cooling rate of the hybrid system,enabling the final phonon number beyond the classical cooling limit in the strong optomechanical coupling ***,the cooling effects of the EIA case is better than that of the normalmode splitting case under the same optomechanical coupling strength and qubit dissipation rate.

关键词： electromagnetically induced absorption ground state cooling optomechanics

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Proton induced radiation effect of SiC MOSFET under different bias

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Chinese physics B 2023年第10期32卷 708-715页

作者：张鸿郭红霞雷志锋彭超马武英王迪孙常皓张凤祁张战刚杨业吕伟王忠明钟向丽欧阳晓平 School of Material Science and Engineering Xiangtan UniversityXiangtan 411105China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Electronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510610China Northwest Institute of Nuclear Technology Xi'an 710024China

Radiation effects of silicon carbide metal–oxide–semiconductor field-effect transistors(SiC MOSFETs)induced by 20 MeV proton under drain bias(V_(D)=800 V,V_(G)=0 V),gate bias(V_(D)=0 V,V_(G)=10 V),turn-on bias(V_(D)=0.5 V,V_(G)=4 V)and static bias(V_(D)=0 V,V_(G)=0 V)are *** drain current of SiC MOSFET under turn-on bias increases linearly with the increase of proton fluence during the proton *** the cumulative proton fluence reaches 2×10^(11)p·cm^(-2),the threshold voltage of SiC MOSFETs with four bias conditions shifts to the left,and the degradation of electrical characteristics of SiC MOSFETs with gate bias is the most *** the deep level transient spectrum test,it is found that the defect energy level of SiC MOSFET is mainly the ON2(E_(c)-1.1 eV)defect center,and the defect concentration and defect capture cross section of SiC MOSFET with proton radiation under gate bias increase *** comparing the degradation of SiC MOSFET under proton cumulative irradiation,equivalent 1 MeV neutron irradiation and gamma irradiation,and combining with the defect change of SiC MOSFET under gamma irradiation and the non-ionizing energy loss induced by equivalent 1 MeV neutron in SiC MOSFET,the degradation of SiC MOSFET induced by proton is mainly caused by ionizing radiation *** results of TCAD analysis show that the ionizing radiation damage of SiC MOSFET is affected by the intensity and direction of the electric field in the oxide layer and epitaxial layer.

关键词： proton silicon carbide metal–oxide–semiconductor field-effect transistor(SiC MOSFET) degradation defect ionization radiation damage

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IC-LOGO: A Custom Dataset and Benchmark for Integrated Circuit Logo Detection Task 6

IC-LOGO: A Custom Dataset and Benchmark for Integrated Circu...

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6th International Conference on Artificial Intelligence and Computer applications, ICAICA 2024

作者： Zhao, Yue Luo, Jun Wang, Zhizhe Zhang, Qiuzhen China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9798350377255

In order to enable computers to automatically detect the logo information of Integrated Circuit (IC) images and assist users in searching for the required IC manufacturer information based on the logo images, this article conducted research and analysis on the existing public datasets in the field of logo detection, and found that the existing public datasets cannot meet the specific research and application needs of this article. Therefore, the Integrated Circuit Logo (IC-LOGO) image dataset is presented in this article. The dataset contains 971 internal logo images from 17 manufacturers and 2091 external logo images from 30 manufacturers. Furthermore, the logo images were precisely positioned and annotated. Finally, a benchmark containing 8 different object detection networks was used to test the IC-LOGO dataset. The results show that all detectors trained on the dataset could detect the region and category of LOGO precisely and robustly. © 2024 IEEE.

关键词： Image annotation

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Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation

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Chinese physics B 2023年第2期32卷 525-534页

作者：张鸿郭红霞雷志锋彭超张战刚陈资文孙常皓何玉娟张凤祁潘霄宇钟向丽欧阳晓平 School of Material Science and Engineering Xiangtan UniversityXiangtan 411105China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510610China Northwest Institute of Nuclear Technology Xi'an 710024China

Experiments and simulation studies on 283 MeV I ion induced single event effects of silicon carbide(SiC) metal–oxide–semiconductor field-effect transistors(MOSFETs) were carried out. When the cumulative irradiation fluence of the SiC MOSFET reached 5×10^(6)ion·cm^(-2), the drain–gate channel current increased under 200 V drain voltage, the drain–gate channel current and the drain–source channel current increased under 350 V drain voltage. The device occurred single event burnout under 800 V drain voltage, resulting in a complete loss of breakdown voltage. Combined with emission microscope, scanning electron microscope and focused ion beam analysis, the device with increased drain–gate channel current and drain–source channel current was found to have drain–gate channel current leakage point and local source metal melt, and the device with single event burnout was found to have local melting of its gate, source, epitaxial layer and substrate. Combining with Monte Carlo simulation and TCAD electrothermal simulation, it was found that the initial area of single event burnout might occur at the source–gate corner or the substrate–epitaxial interface, electric field and current density both affected the lattice temperature peak. The excessive lattice temperature during the irradiation process appeared at the local source contact, which led to the drain–source channel damage. And the excessive electric field appeared in the gate oxide layer, resulting in drain–gate channel damage.

关键词： heavy ion silicon carbide metal–oxide–semiconductor field-effect transistors(SiC MOSFET) drain–gate channel drain–source channel single event burnout TCAD simulation

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Influence of temperature on the total ionizing dose effects in Al2O3-doped optical fibers

Influence of temperature on the total ionizing dose effects ...

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2023 Advanced Fiber Laser Conference, AFL 2023

作者： Ma, Teng He, Yujuan Lei, Zhifeng Zhang, Hong Peng, Chao Zhang, Zhangang Liu, Yuebo Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou511370 China

ISBN: (纸本)9781510677661

This article investigates the influence of temperature on the total ionizing dose (TID) effects in optical fibers. Radiation induced attenuation (RIA) spectra at 1310 nm were measured in G652, OM, PM1016-C, and homemade B1-R fibers during and after γ-irradiation at different temperatures. The B1-R fibers were doped with varying Al2O3 content in their core and coating layers. Experimental results show that the B1-R fibers have significant lower losses compared with the other three fibers. At a temperature of 25° and a TID does of 50 kGy, the B1-R fiber showed an RIA of only 1.35 dB/Km, while the other three fibers exhibit a minimum loss exceeding 6.44 dB/Km. Furthermore, the B1-R fiber withstood an irradiation does 100 times higher than other optical fibers. For a fixed temperature, the attenuation in B1-R fibers recovered quickly after irradiation, reaching their minimum values approximately 15 days post-irradiation, whereas the other three optical fibers required more than 25 days to recover. This study also delves into the underlying mechanisms contributing to the radiation resistance of B1-R optical fibers. The findings presented in this work offer critical insights for the development of high-performance, radiation resistant fibers, rendering them suitable for deployment in challenging deep space environments characterized by intense radiation conditions. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Irradiation

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Giant negative electrocaloric effect measured by indirect method in X-ray irradiated P(VDF-TrFE)films

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Journal of Materiomics 2024年第3期10卷 624-631页

作者： Bo Li Bin Yang Hong Zhang Jiajia Zhang Qianjin Wang Weishu Liu Department of Materials Science and Engineering Southern University of Science and TechnologyShenzhenGuangdong 518055China Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and TechnologyShenzhenChina College of Physics and Electronic Information Yunnan Normal UniversityYunnan Kunming 650500China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510610China

Flexible solid-state cooling devices with high efficiency are attracted to ferroelectric polymers with excellent negative electrocaloric(EC)*** is challenging to obtain a large negative EC effect in ferroelectric polymers due to the lack of tunable techniques.A giant negative EC response was obtained in the poly(vinylidene fluoride-trifluoroethylene)copolymers(P(VDF-TrFE),70/30,in mole ratio)irra-diated with high-energy *** irradiated P(VDF-TrFE)films showed an adiabatic temperature change of-13.5 K at 40 MV/m under a dose of 5 Mrad(1 Mrad=10^(4) J/kg)obtained by the indirect *** significant negative EC effect is attributed to the enhancement of crystalline due to the entry of polymer molecules into the amorphous to crystalline structure and the reduction of heat ca-pacity due to the increase of *** addition,X-ray irradiation improves the dielectric coefficient from 15 to *** research indicates that irradiation can modify the negative EC properties of ferro-electric polymers for solid-state cooling.

关键词： Negative electrocaloric effects X-rays radiation P(VDF-TrFE)films

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RESEARCH ON THE reliability OF WIRE BONDING IN HUMID ENVIRONMENTS 13

RESEARCH ON THE RELIABILITY OF WIRE BONDING IN HUMID ENVIRON...

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13th International Conference on Quality, reliability, Risk, Maintenance, and Safety Engineering, QR2MSE 2023

作者： Zhang, Xiaowen Ling, Xiaolin Gao, Ru Science and Technology on Reliability Physics and Application of Electronic Component Laboratory 110 DongGuangZhuang Road Guangzhou China

ISBN: (纸本)9781839539848

In order to study the reliability of bonding wire under the condition of humidity environment, a testing structure chip was designed and three samples were subjected to humid test at 85℃/85% RH. During the experiment, all three samples showed an increase in leakage current. Through on-site observations, it was found that the leakage current occurred initially, when the experiment continued, the test structure failed due to the detachment of bonding wires from the bonding pad. The failure analysis showed that the surface of the passivation layer between adjacent aluminium pads was covered with impurities, including carbon (C), sodium (Na), aluminium (Al), tungsten (W), and chlorine (Cl) elements. The presence of these conductive elements resulted in leakage between two adjacent aluminium pads on the chip surface that had different electronic potentials. The detachment of bonding wires from the bonding pad is attributed to a chemical reaction caused by vapors. This reaction corrodes the metal aluminium on the bonding pad, leading to the formation of aluminium oxide, causing the gold wire to detach from the pad, and the lifetime of the bonding wire solder joints has been calculated. © The Institution of Engineering & technology 2023.

关键词： Aluminum oxide

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An overview of traditional and deep learning based image segmentation methods

An overview of traditional and deep learning based image seg...

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2024 International Conference on Image Processing and Artificial Intelligence, ICIPAl 2024

作者： Li, Mengxuan Luo, Jun Li, Xiangning Zhao, Yue Xidian University Xi’an China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (纸本)9781510681514

Image segmentation remains a challenging problem in computer vision. Various segmentation methods have been developed, including traditional methods based on threshold, edge, region, and morphology, as well as novel methods based on deep learning. The segmentation precision is continuously improving, and its applications are expanding. Starting with traditional image segmentation methods, we organized their performance and practical application in relation to the demand for segmentation of IC surface defects. We then tested the segmentation of the IC surface defects database we created. However, the final result was unsatisfactory. Therefore, we are continuing to explore segmentation models based on deep learning and summarise their performance evaluation to explore the possibility of applying them to the segmentation of IC surface defects. © 2024 SPIE.

关键词： Image segmentation

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