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International Conference on (ICEPT) electronic Packaging technology

作者： Haozhong Wang Hongtao Chen Junshan Xiang Xiaofeng Yang Sauvage Laboratory for Smart Materials Harbin Institute of Technology (Shenzhen) Shenzhen China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

Cu/SiO 2 hybrid bonding technology is proposed as a solution for the increasing demand of 3D packaging for higher I/O density and higher bandwidth applications. In this paper, a numerical approach to investigate the stress distribution of fine-pitch die-to-die hybrid bonding (D2D-HB) is proposed. The Finite Element Analysis (FEA) tool is used to build the model of the bonding process of D2D-HB. The influence of design parameters and conditions on the evolution of the stress on the Cu-Cu bonding interface and the dielectric layer interface during the bonding process is investigated. The results show that, the peak pressure on the Cu-Cu interface and the peak tensile force on the SiO 2 -SiO 2 interface can reach up to 85.26 MPa and 183.37 MPa during heating stage, respectively. During cooling stage, the pressure on the Cu-Cu interface changes into tensile force, and the tensile force on the SiO 2 -SiO 2 interface changes into pressure. In addition, the simulation results of the Cu-Cu bonding area are also displayed and discussed. For all the D2D-HB design studied in this research, up to 97.5% of Cu bonding area could be obtained. The simulation results will provide not only theoretical support for hybrid bonding technology.

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Proper Orthogonal Decomposition and Long Short-Term Memory Neural Network-Based Multiphysics Digital Twin Model for electronic Device Online Condition Monitoring

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IEEE Transactions on Instrumentation and Measurement 2025年 74卷

作者： Wang, Le-Tian Wang, Da-Wei Zhang, Bo-Wen Yang, Xiao-Feng Zhao, Wen-Sheng Hangzhou Dianzi University Innovation Center for Electronic Design Automation Technology School of Electronics and Information Hangzhou310018 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The 5th Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou511370 China

Digital twin (DT), a virtual representation of a real-world object, has great potential in online condition monitoring and operation management of electronic devices. Although numerical simulation methods, such as the finite element method and method of moment, can accurately evaluate the performance of electronic devices, they are usually time-consuming and computationally intensive, making real-time monitoring challenging. In this work, a multiphysics DT modeling approach for electronic devices is proposed, where the proper orthogonal decomposition (POD) method is first employed to reduce the problem order, and then, the long short-term memory (LSTM) neural network is trained based on the reduced-order model to obtain the DT model. Furthermore, to deal with the difficulty of obtaining the initial physical states for DT model, an adaptive compensation method is developed, enabling the online monitoring to start from unknown initial states. Through building the thermal and mechanical DT models of an integrated microsystem and comparing modeling efficiency and model accuracy with traditional approaches, the performance of the proposed modeling method is verified. Finally, a prototype online thermal monitoring system for a multichip module is developed by combining its DT model with a measurement platform. Results indicate that the model performs well in online condition monitoring of multichip module even starting from a random unknown initial state. © 1963-2012 IEEE.

关键词： Multichip modules

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reliability study of Through Glass Vias under high current density

Reliability study of Through Glass Vias under high current d...

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International Conference on (ICEPT) electronic Packaging technology

作者： Junshan Xiang Hongtao Chen Haozhong Wang Xiaofeng Yang Sauvage Laboratory for Smart Materials Harbin Institute of Technology (Shenzhen) Shenzhen China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

Through glass vias (TGVs) interconnection technology based on glass interposer shows a great application prospect in RF devices, MEMS packaging and other fields due to its excellent high-frequency electrical characteristics, outstanding mechanical stability, and lower cost. Electromigration is one of the common failure modes in electronic components, so it is important to study the reliability of TGV interconnection structures under high current density. In this paper, the electromigration of an RDL-TGV has been investigated by finite element simulation and experiment. Simulation results show that RDL-TGV junction is the most vulnerable area for failure. The experimental results show that the electromigration voids are concentrated on the RDL side near the TGV-RDL junction. The growth mechanism of the electromigration voids in the RDL-TGV structure is summarized. The results of simulation and experiment can provide guidance for the study of electromigration reliability of TGV interconnection.

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reliability of gold wire leads for MEMS gyroscopes under a thermo-mechanical coupling field

Reliability of gold wire leads for MEMS gyroscopes under a t...

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IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

作者： Yingyu Xu Chunhua He Qinwen Huang Guizhen Yan School of Computer Guangdong University of Technology Guangzhou China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Institute of Microelectronics Peking University Beijing China

ISBN: (数字)9798350359831

ISBN: (纸本)9798350359848

In this study, we investigate the vibration characteristics and failure modes of gold wire leads in MEMS gyroscopes under high-temperature and thermal-shock conditions through simulation and experimental analysis. The simulation results indicate a gradual degradation in the intrinsic frequencies of the leads as the temperature rises from -40 °C to 120 °C. The simulation results are verified by testing the intrinsic frequency with a percentage error of less than 2%. The average temperature drift of the intrinsic frequency is approximately - 8.82 Hz/°C. When comparing the intrinsic frequency changes before and after burn-in and thermal-shock tests, it is evident that the mechanical degradation of the gold wire leads is limited under the severe thermo-mechanical coupling field, with frequency fluctuations ranging from 0.01% to 17%. There is no occurrence of a lead fracture or solder joint failure. The main failure modes are lead collapse and short-circuit failure due to the fatigue of long leads. Minimizing the span and height of the leads can reduce the risk of fatigue and short-circuit failures.

关键词： Micromechanical devices Couplings Gold Simulation Thermomechanical processes Fatigue Gyroscopes

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Investigation of Off-state Stress Time-Dependent Dynamic On-resistance of Commercial High Voltage GaN HEMTs

Investigation of Off-state Stress Time-Dependent Dynamic On-...

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IEEE Conference on Industrial electronics and applications (ICIEA)

作者： Yao Li Hui Tang Ke Zhang Yiqiang Ni Liang He Zhiyuan He Yijun Shi Jun Liu School of Electrical Engineering University of South China Hengyang China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

The effects of off-state stress time on dynamic on-resistance are investigated in a commercial 650 V GaN power device. A modified double pulse test (DPT) circuit is used to evaluate the dynamic on-resistance degradation with various stress value and time under hard-switching conditions. Our experimental results reveal partial recovery behaviors of dynamic on-resistance with stress voltage increasing. The dynamic on-resistance degradation gets more severe as stress voltage initially increases. Then the dynamic on-resistance reaches a peak value and begins to decrease as the stress voltage further increases. Furthermore, we find that the turning point of maximum dynamic on-resistance occurs at a lower stress voltage with longer stress time. It indicates that stress time is a very important factor affecting the degree of dynamic on-resistance degradation.

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Analytical and Measurement-Based Method for Voltage Fault Injection of CAN Chip Security

Analytical and Measurement-Based Method for Voltage Fault In...

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International Conference on electronics technology (ICET)

作者： Naiye Wang Chenbing Qu Bo Hou Liwei Wang Chen Sun Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China School of Computational Science and Electronics Hunan Institute of Engineering Xiangtan China

The need for CAN chip dependability is growing urgent due to the widespread use of CAN bus in numerous sectors and professions. This word presents an analytical method of voltage fault injection measurement-based CAN chip security. The automatic hardware FI test method based on the prototype system is proposed to detect the fault error in abnormal environment. The signal trigger and control module is designed to test automation process. In addition, the extended parameter model is established for shortening test time and automatic statistical analysis of a number of test data. The results show that the test circuit system CAN realize the voltage random fault test and automatic analysis in the range of $1.5 \sim 5.5\mathrm{V}$, which provides a more accurate and comprehensive basis for improving the security of CAN chip.

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New Diagnostics for Inferring Multiple Fault Scenarios and Accurate Fault Localization

New Diagnostics for Inferring Multiple Fault Scenarios and A...

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IEEE Conference on Global Communications (GLOBECOM)

作者： Huisi Zhou Wei Hu Dan Zhu Liwei Wang School of Cybersecurity Northwestern Polytechnical University Xi’an China Research & Development Institute of Northwestern Polytechnical University in Shenzhen China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory Guangzhou China

ISBN: (数字)9798350351255

ISBN: (纸本)9798350351262

For many high-tech fields such as mobile communication systems, network management, and satellite and space applications, it is vital to discover faulty components of manufactured devices in a timely manner to ensure safety. Model-based diagnosis is a crucial element in fault diagnosis. It aims to find the possible causes of the observed unexpected behaviors of a system when assuming all of its components work correctly. In this paper, we propose two diagnostics, namely, the Improved Model-Based Diagnosis (IMBD) and the Localization-Based Diagnosis (LBD), to address the research challenge that massive candidate diagnoses are needed in the traditional model-based diagnosis approach for repairing the faulty system. Our diagnostics realizes a simulator to simulate the single-fault scenarios, through which we can reason about the scenarios where multiple faults occur and find which components are more likely to fail in the multiple-fault system. Experiments using the ISCAS-85 benchmarks indicate that LBD is superior to IMBD and SAT-based approaches for accurate fault localization.

关键词： Fault diagnosis Location awareness Accuracy Satellites Benchmark testing Cognition Safety Global communication

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Sub-Safety Recognition and reliability Evaluation for Motor Drive System in High Speed Trains 31st

Sub-Safety Recognition and Reliability Evaluation for Motor ...

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31st European Safety and reliability Conference, ESREL 2021

作者： Meng, Linghui Zhou, Zhenwei He, Shilie China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou Guangdong511370 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou Guangdong511370 China

ISBN: (纸本)9789811820168

The concept of sub-safety for high-speed trains is put forward for the first time. As trains run for a long time, train systems constantly age and degrade and enter a state of sub-safety. It is important to recognize the sub-safety state in a timely manner in order to implement safety control measures to prevent the system from entering a faulty state. Firstly, this paper analyzed the main faults of the devices in a high-speed train’s motor-drive system and their failure mechanisms. Secondly, a sub-health state was proposed for the main devices of the system. Then a degradation and state transition model for the devices was established based on the Markov theory. Finally, using the reliability model for the system, the reliability was evaluated and the sub-safety state was determined. © ESREL 2021. Published by Research Publishing, Singapore.

关键词： Railroads

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Fault Diagnosis of Avionics System Based on Improved CNN and BiLSTM 23

Fault Diagnosis of Avionics System Based on Improved CNN and...

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Proceedings of the 2023 6th International Conference on Algorithms, Computing and Artificial Intelligence

作者： He Li Danni Hong Zhenwei Zhou Xiangning Li Junbin Liu Guangzhou Institute of Technology Xidian University China and China Electronic Product Reliability and Environmental Testing Institute China Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Institute China School of Mechano-Electronic Engineering Xidian University China

ISBN: (纸本)9798400709203

This paper presents a novel approach for diagnosing faults in aerospace systems by leveraging the power of Word2vec to transform text data into word vectors. Using improved Convolutional Neural Network(CNN) and bi-directional LSTM models to extract fault feature information from the input data, introducing an attention mechanism to focus more on key feature information in the data, and employing a dropout regularization method to prevent the model from being overfitted. Our model considers local features, as well as contextual information, which fully extracts the feature information of the text to classify the fault data. Compared with other methods, the proposed method outperforms other techniques and significantly reduces the manual dependence of fault classification, saves the troubleshooting time of maintenance personnel, and achieves the optimum in accuracy, recall and f1-score performance indicators, which demonstrates the effectiveness of our approach.

关键词： Avionics system

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The Effect of Pore Defects on the Interfacial Thermal Resistance of GaN-Diamond Heterostructure

The Effect of Pore Defects on the Interfacial Thermal Resist...

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International Conference on (ICEPT) electronic Packaging technology

作者： Chao Yang Pengfei Zhao Jian Wang Dezhi Ma Zhiyuan He Zhiwei Fu Jia-Yue Yang School of Energy and Power Engineering Shandong University Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Jinan China School of Microelectronics Faculty of Electronic and Information Engineering Xi'an Jiaotong University Xi'an China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China School of Energy and Power Engineering Shandong University Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China School of Energy and Power Engineering Shandong University Optics & Thermal Radiation Research Center Institute of Frontier and Interdisciplinary Science Shandong University Jinan China

Heat transfer across the GaN-diamond interface is very important in the thermal management of GaN electronics on diamond substrates. The influence of various defects caused by manufacturing processes on the thermal resistance of the GaN-diamond interface is still unclear. In this work, we use non-equilibrium molecular dynamics simulations to investigate the effect of possible pore defects on GaN-diamond interfacial heat transport. Square pores of different sizes are introduced at the GaN-diamond interface. By changing the pore cross-sectional area, we found that the introduction of pore defects will significantly increase the interfacial thermal resistance compared with the case without defects. Pores can also cause more significant stress and strain on the edge atoms at the interface and may hinder the normal transmission of phonons. At the same time, we calculated the phonon density of states (PDOS) corresponding to different pore sizes to analyze the reason for the change in interfacial thermal resistance. PDOS calculation results show that the higher porosity leads to the enhancement of phonon scattering at the interface. The low-frequency phonons that are more easily transmitted through the interface are scattered into high-frequency phonons, increasing the thermal resistance of the interface.

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