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System reliability and Safety Engineering (SRSE), International Conference on

作者： Ning Li Zhijian Chen Xiaowen Zhang South China University of Technology Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou Guangzhou China

In this paper, electromigration (EM) activation energy versus temperature in advanced damascene copper lines has been studied. EM experiments have been carried out on fully back-end processed samples under the condition of different temperatures and current densities. The metal line test structures used have the four-terminal Kelvin configuration and the lines length is 800µm with the minimum design rule width. The specific location of failure was observed by scanning electron microscope (SEM) and the failure mechanism was analyzed. The mechanical stress of the test structure was measured by Raman spectroscopy and the effect of mechanical stress on the reliability of metal electromigration was studied. It is found that the activation energy decreases slowly with the decrease of the test temperature. When the activation energy acquired under high temperature environment was extrapolated to operation condition by quadratic polynomial fitting, the activation energy under the environment temperature of 300°C is different from the value under the operation condition. Meanwhile, when predicting the EM lifetime, the results is that the EM lifetime under the operation condition decreased to 18% compared to that under the environment temperature of 300°C.

关键词： Electromigration Scanning electron microscopy Raman scattering Life estimation Safety Copper reliability

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Three-Point Bending Test and Finite Element Analysis of Flexible Termination Multilayer Ceramic Capacitors

Three-Point Bending Test and Finite Element Analysis of Flex...

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International Conference on (ICEPT) electronic Packaging technology

作者： Fangzhou Chen Xiaodong Chen Jiahao Liu Jianyu Wu Hao Zhao Peijiang Liu Zhaoning Sun Wancun Tian Rui Cao Science and Technology on Reliability Physics and Application of Electronic Component Laborator China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China Reliability Research and Analysis Center (RAC) China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China China Aerospace Components Engineering Center China Academy of Space Technology Beijing China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

Flexible Termination Multilayer Ceramic Capacitors (FTMLCCs) introduce a flexible electrode layer composed of resin and conductive filler on top of the typical three-layer electrode structure. This flexible layer can absorb significant bending deformation, thus protecting the internal ceramic structure without increasing the capacitor size or compromising its capacitance. In this study, FTMLCC of 1812 product was chosen as the research subject to quantitatively analyze the protective effect of the flexible electrode and the failure mechanism of cracking under bending loads. Simulation analysis was conducted to study the stress and strain distribution of the capacitor after three-point bending. Additionally, bending tests were performed on Multi-layer ceramic capacitors(MLCC) containing flexible electrodes, and a impedance analyzer was employed to address the issue of online monitoring of FTMLCC failures. By combining stress-strain testing to confirm the strain magnitude of the Printed Circuit Board(PCB) during bending, the strain result of PCB in experiments were compared with numerical simulation results to validate the rationality of the numerical model. The failure point of capacitor is located by infrared thermal imaging technology. The electrode structure, the defects of the flexible layer and the failure mode of FTMLCC were studied by metallographic analysis.

关键词： Electrodes Printed circuits Failure analysis Bending Ceramic capacitors Nonhomogeneous media Ceramics

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Investigation on the Degradation Mechanism of A1GaN/GaN HEMTs Under the Effect of Microwave Pulses at Different Powers

Investigation on the Degradation Mechanism of A1GaN/GaN HEMT...

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Prognostics and System Health Management Conference (PHM-Qingdao)

作者： Fanfeng Yang Min Liao Binjian Zeng Peiliang Yang Yiqiang Chen College of Materials Science and Engineering Xiangtan University Xiangtan China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou China

We have investigated the effect of microwave pulse stress of different powers on A1GaN/GaN HEMTs. The dc characteristics of the devices were first scrutinized. The results indicate that the electrical characteristics of the devices are degraded after stress. The saturation drain-source current decreases from 681.8 mA to 246.5 mA, a decrease of 63.8 63.8%, at the power 40 dBm. And at the power 45 dBm, the saturation drain-source current drops even more, from 662.3 mA to 176.7 mA, a drop of 73.3 73.3%. The stress results in significant positive drift of threshold voltage and decrease of gate leakage current. And the degradation is more obvious with increasing microwave pulses power. Then, the internal defects of the device are characterized by low-frequency noise method, and the mechanism of device degradation is discussed. At the power of 45 dBm, the internal defect density of the device doubles, resulting in more electrons being captured at the channel. This is useful for the reliability level of future devices and practical applications.

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Enhanced Piezoelectric and Pyroelectric Response in P(Vdf-Trfe) Based Sensor Via X-Ray Irradiation

SSRN

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SSRN 2023年

作者： Yang, Bin Zhang, Hong Wang, Qianjin Li, Bo Liu, Weishu College of Physics and Electronic Information Yunnan Normal University Yunnan Kunming650500 China Department of Materials Science and Engineering Southern University of Science and Technology Guangdong Shenzhen518055 China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510610 China

Given the inherent limitations of sensing technologies, this study aimed to investigate the transformative effect of high-energy X-rays on the enhancement of piezoelectric and pyroelectric properties of poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE), 70/30%) films. Our investigation showed a remarkable improvement in the pyroelectric and piezoelectric responses in the P(VDF-TrFE) films after irradiation. When irradiated with 1 Mrad X-rays, the P(VDF-TrFE) films exhibit a pyroelectric coefficient of 252 μC m-2 K-1, which is three times higher than that of non-irradiated films, and the piezoelectric coefficient increased to 33 pC N-1. The sensitivity to temperature changes was measured to be 15.66 V K-1 from 0.05 K to 5 K, respectively. In addition, the pressure sensitivity in the range from 0.025 to 10 kPa and 10 to 50 kPa were determined to be 3.62 V kPa-1 and 0.63 V kPa-1. This considerable increase in performance is primarily due to a significant improvement in crystallinity, which increased from 45% to 80%. Consequently, our results strongly suggest that the application of X-rays to P(VDF-TrFE) films is a reliable and effective method to improve both pyroelectric and piezoelectric responses. © 2023, The Authors. All rights reserved.

关键词： Irradiation

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On Latent Defect Acceleration

On Latent Defect Acceleration

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electronics Design Automation (ISEDA), International Symposium of

作者： Yawei Jin Yang Zhang Hong Zhang Chen Chen Xiaoling Lin Yongsheng Sun Yu Huang Cong Li Hailong You School of Microelectronic Xidian University Xi'an China HiSilicon Technologies Co. Ltd Shenzhen China The Science and Technology on Reliability Physics and Application of Electronic Component Laborator China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou Guangdong Province China

ISBN: (数字)9798350352030

ISBN: (纸本)9798350352047

With the widespread application of chips in mission-critical and safety-critical fields, ensuring that chips do not fail during operation has become crucial. However, the increasing number of hard-to-detect latent defects within chips is one of the main factors affecting the quality and reliability of the chip. In this paper, we propose a method to generate latent defect acceleration patterns based on path critical defect locations. When the latent defect appears in different defect locations of the path, the delay of the path will be affected differently. In the proposed method, defect criticality is used to measure the impact of latent defects at different locations on path delay. Critical latent defect locations of the path are selected based on the value of defect criticality. Then the user-defined-faultmodel (UDFM) is used to generate the latent defect acceleration pattern with the goal of maximizing the electrical activity of the critical latent defect location in the path. Experimental results show that the patterns generated using our method achieves an average of 34.9% increase in current through path critical latent defect locations compared to transition patterns.

关键词： Semiconductor device measurement Design automation Mission critical systems reliability engineering Silicon Delays

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Using Load Transient Waveform to Analyze Fault Propagation Mechanism in DC-DC Switching Power Supply

Using Load Transient Waveform to Analyze Fault Propagation M...

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Progress in Electromagnetic Research Symposium (PIERS)

作者： Junliang Wan Pengfei Yu Qiang-Ming Cai Xin Cao Longjian Zhou Haoran Li Yuyu Zhu Jun Fan School of Information Engineering Southwest University of Science and Technology Mianyang China Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component Guangzhou China Robot Technology Used for Special Environment Key Laboratory of Sichuan Province Mianyang China Tianfu Institute of Research and Innovation Southwest University of Science and Technology (SWUST-TIRI) China

ISBN: (数字)9798350375909

ISBN: (纸本)9798350375916

The degradation of certain components within DC-DC power supplies can lead to abnormal performance, resulting in the occurrence of faults. The degradation of components can cause changes in output voltage and current, and the different degradation characteristics of components have different impacts on the characteristics of output parameters. Therefore, it is necessary to master this impact relationship, that is, the fault propagation mechanism can be used to effectively diagnose faults and manage health. Studying the fault propagated mechanism is an important prerequisite for fault diagnosis. Output terminals of DC-DC power supply are usually connected in parallel with electrolytic capacitors. The function of electrolytic capacitors is to filter, filtering out most of the AC part of the output voltage, and reducing the ripple of the output voltage. Electrolytic capacitors are the most vulnerable components to failure in switching power supplies, with approximate 60% of failed components being electrolytic capacitors. Therefore, the fault propagation mechanism of electrolytic capacitors is a key research topic. Most research focuses on the fault propagation mechanism based on steady-state output signals. This article studies the fault propagation mechanism based on transient output signals. Through experimental testing, the impact of parameter degradation of electrolytic capacitors on the transient waveform of output voltage and the mapping relationship between capacitor degraded parameters and transient waveform are studied. The method is to analyze the voltage waveform when the current step changes using equivalent degradated experiments of capacitors. Its advantage lies in the fact that transient waveforms are more sensitive than steady-state waveforms and require lower sampling rates, making it easier to analyze the degradated characteristics of electrolytic capacitors. For power supplies with simple structures, data is collected through simulation. For commerc

关键词： Degradation Resistance Power supplies Capacitors Voltage Switches Capacitance

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A Reconfigurable Active-RC Filter with Variable Gain and An RC-Reused Tuning Circuit

A Reconfigurable Active-RC Filter with Variable Gain and An ...

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IEEE Asia-Pacific Conference on Circuits and Systems

作者： Shan Gao Zhi-Jian Chen Xiangfeng Sun Siyuan Yang Bin Li Xiao-Ling Lin School of Microelectronics South China University of Technology Guangzhou China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory Guangzhou China

A 3 rd -order reconfigurable fully differential active-RC low pass filter (LPF) is presented in this paper. It provides Butterworth response with tunable 3dB-bandwidth from 200KHz to 40MHz and variable gain from OdB to 30dB in 1dB steps. The Tuning circuit presented in this paper is more area-saving by using the R-C array of the filter instead of additional R-C array. The filter is designed in SMIC 55nm CMOS technology and dissipates 6.5mW for a supply voltage of 1.3V. Post-simulation shows that the 3 rd -order harmonic intercept point (IIP3) is larger than 24.4dBm and spurious-free dynamic range (SFDR) is 57.7dB while the gain and bandwidth of the filter are set to OdB and 14MHz respectively.

关键词： Wireless communication Low-pass filters Bandwidth Voltage Receivers CMOS technology Harmonic analysis

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An Investigation of Time Dependent Dielectric Breakdown (TDDB) on Carbon Nanotube Field-Effect Transistors (CNTFETs)

An Investigation of Time Dependent Dielectric Breakdown (TDD...

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International Conference on (ICEPT) electronic Packaging technology

作者： Tang Chao Rui Gao Chao Li Long Wei Yichi Zhang Zhizhe Wang Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou Institute of Technology Xidian University Guangzhou China National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

As technology nodes continue to scale down, silicon-based integrated circuits have approached physical limits. In order to sustain Moore's Law, new materials have become a major focus of research in the field of integrated circuits, with carbon-based integrated circuits considered one of the most promising new materials due to their superior electrical characteristics. Currently, reliability is a primary concern constraining the development of carbon-based integrated circuits. Time-dependent dielectric breakdown (TDDB) is a common reliability issue in field-effect transistors, and it is also prevalent in CNTFETs. This paper employs the measure-atress-measure (MSM) method to investigate the TDDB phenomenon in CNTFETs, applying 3 different constant electrical stress on multiple devices and extract the time to breakdown (tbd). Experiment results show tbd follows weibull distribution, same as silicon MOSFETs, but with a much smaller voltage accelerate factor of 16.91 compare to the typical values of silicon. It is speculated this might be due to the inferior oxide/CNT interface quality compared to silicon allows generated trap to form a leakage path under relatively low electric filed stress.

关键词： Integrated circuits MOSFET Silicon Time measurement CNTFETs Dielectric breakdown Transistors

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Electromagnetically-induced-absorption-like ground state cooling in a hybrid optomechanical system

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Chinese physics B 2025年第4期 423-432页

作者：董耀勇郑学军王登龙赵鹏 School of Electromechanical Engineering Guangdong University of Technology School of Mechanical Engineering and Mechanics Xiangtan University School of Physics and Optoelectronics Xiangtan University Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute

We present a scheme for the electromagnetically-induced-absorption(EIA)-like ground state cooling in a hybrid optomechanical system which is combined by two-level quantum systems(qubits) and a high-Q optomechanical cavity. Under the weak qubit-cavity coupling, the system exhibits an EIA-like effect and this effect is caused by quantum destructive interference that is distinct from the conventional EIA effect driven by quantum constructive interference. More importantly,the EIA-like cooling mechanism can significantly enhance the cooling rate of the hybrid system, enabling the final phonon number beyond the classical cooling limit in the strong optomechanical coupling regime. Meanwhile, the cooling effects of the EIA case is better than that of the normalmode splitting case under the same optomechanical coupling strength and qubit dissipation rate.

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Analysis of Internal Atmosphere of InGaAs Detectors with Different Degassing Conditions 3

Analysis of Internal Atmosphere of InGaAs Detectors with Dif...

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3rd International Conference on System reliability and Safety Engineering, SRSE 2021

作者： Lai, Canxiong Sun, Wen Yang, Shaohua Zhou, Bin Sci. and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics Shanghai China

ISBN: (纸本)9781665401609

the internal atmosphere composition of the cavity package of InGaAs detector has an important impact on its reliability. In this paper, the internal atmosphere contents of the detectors prepared at different degassing conditions are analyzed. The results show that vacuum baking at a relatively low temperature such as 45°C can reach an acceptable internal atmosphere level. Higher baking temperature °fif ((db further reduce the moisture content to about 1000ppmv, which would make the detector more reliable for long-term operation and thus be an ideal choice for degassing. Besides vacuum baking, the degassing effectiveness of nitrogen gas washing is also confirmed to be acceptable, although the moisture and oxygen contents are higher than those of vacuum baking. © 2021 IEEE.

关键词： Semiconducting indium gallium arsenide

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