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Software Engineering, Social Network Analysis and Intelligent Computing (SSAIC), Asia-Pacific Conference on

作者： Hai Lin Xianshan Dong Wei Su Qinwen Huang Agam Tomar School of Mechanics and Construction Engineering Jinan University Guangzhou China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China MOE Key lab of Disaster Forecast and Control in Engineering Guangzhou China Faculty of Engineering and Mathematical Sciences University of Western Australia Australia

ISBN: (数字)9798350393682

ISBN: (纸本)9798350393699

In order to discuss the influence of the number of sheets on acceleration and frequency curve of sample surface, the finite element model of clamp, SOP sample and metal sheet is firstly established with Solidworks. Different number of sheets are laid on the surface of SOP sample. Then changing the number of the paper sheets, harmonic response analysis is converted based on modal analysis. The influence of different number of sheet on acceleration and frequency curve is discussed. The results show the relation between acceleration-frequency curve of different thickness of paper, which provides reference for packaging design.

关键词： Solid modeling Social networking (online) Modal analysis Metals Packaging Harmonic analysis Numerical simulation

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Research on Fault Diagnosis and Detection of On-Line Monitoring Equipment Based on Internet of Things

Research on Fault Diagnosis and Detection of On-Line Monitor...

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作者： Lu, Guiping Liang, Jiaran Shentu, Zeyu Wu, Wenxiong He, Minghao Xiao, Zhiyong Li, Jianke Beijing Institute of Technology Zhuhai Zhuhai Guangdong519088 China The Fifth Electronics Research Institute of Ministry of Industry and Information Technology Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou Guangdong510610 China

In order to quickly and accurately identify one of the many equipment that has stopped working or a working environment has changed due to errors. A method based on the Internet of things online monitoring equipment is designed to observe whether equipment is working normally. Through the design of an intelligent collection card with a variety of sensors, information will be collected and transmitted to a collection server, and finally uploaded to a cloud, so that experimental conditions can be traced back to whether experimental conditions have been artificially changed or whether equipment has been not operated properly. Through the data analysis of a software operation platform, the current status of electrical safety testing equipment and the results of testing data can be monitored online, and then the fault of electrical safety equipment can be diagnosed. That is, the real-time monitoring and fault diagnosis of electrical safety equipment and the unified management of on-line equipment. © 2021, The Author(s), under exclusive license to Springer Nature Switzerland AG.

关键词： Failure analysis

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A Novel Capacitive Sensor Featuring Surface Microstructure and Ion Gels for Measuring Full Pressure with High-Sensitivity

SSRN

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SSRN 2023年

作者： Fan, Leijin Liu, Yuantao Yang, Xiaofeng Sun, Hu Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The 5th Electronics Research Institute Ministry of Industry and Information Technology Guangzhou511370 China School of Aerospace Engineering Xiamen University Xiamen361005 China

Compared with positive pressure measurement, which is widely used in many fields, negative pressure measurement is often ignored. However, realizing full pressure measurement, that is, positive and negative pressure measurement, with high sensitivity and wide measurement range, is one of the most urgent development directions and key challenges faced by flexible pressure sensors. To overcome this challenging problem, a highly sensitive full-pressure capacitive sensor with surface microstructure and ion gels is introduced in this paper. The sensing mechanism of the sensor is implemented by detecting the capacitance change caused by the change in the contact area between the ion gel and the electrode due to the internal and external pressure difference. The PVA/KOH basic gel material is used to resist shear deformation, and the uniform microstructure on the gel surface is achieved by the template method. How to maximize the sensitivity of positive and negative pressure measurements is discussed by carefully evaluating the design parameters of the sensor. The fabricated sensor has a wide measurement range (-100 to 250 kPa) with high sensitivity (S = 15.6 nF/kPa) in the negative pressure region and (S = 5.2 nF/kPa) in the positive pressure region. In addition, the sensor exhibits fast response, cycle stability, and low measurement limit, which further enhances its performance advantages. In order to validate the application potential of the sensor, the paper conducts experimental verification using the relationship between wind pressure measurement results and the angle of contact with the sensor, as well as the relationship between vehicle speed and wind pressure magnitude. The results show that the designed sensor has potential application prospects in full pressure measurement. © 2023, The Authors. All rights reserved.

关键词： Capacitive sensors

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Stirred-Electrodeposition Construction of Porous Fe-Doped Nise Nanoclusters as a Bifunctional Catalyst for Water Splitting

SSRN

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SSRN 2023年

作者： Mo, Dingdiao Zhang, Jiaxing Chen, Guoxiang Huang, Zihao Liu, Xiangao Cai, Weitong Cui, Jie Su, Wei School of Materials and Energy Guangdong University of Technology Guangdong Guangzhou510006 China Analytical and Testing Center South China University of Technology Guangzhou510640 China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Guangdong University of Technology China

Transition metal selenisation is a promising approach for improving the catalytic activity for overall water splitting. However, electrodeposited NiSe electrocatalysts have not exhibited excellent overall water-splitting performance. Herein, a simple stirring-electrodeposition strategy was developed to reconfigure the catalyst morphology, and the proportion of the Fe dopant (Ni/Fe) was adjusted to synthesize a Fe-doped NiSe electrocatalyst with a 3D nanocluster morphology (named Ni0.5Fe0.5Ses/NF). This morphology combined the advantages of porous 3D nanoclusters, which have large specific surface areas, more exposed active sites and accelerated electron transfer rates compared to the 2D NiSe catalysts synthesized by electrodeposition. In addition, XPS characterization confirmed that Fe doping optimized the electronic structure of NiSe. The changes occurring in the surface compositions of NiSe/NF and Ni0.5Fe0.5Se-s/NF during the oxygen evolution reaction (OER) were also characterized by in situ Raman spectroscopy, which revealed that Fe doping enabled faster surface reconstruction of the electrocatalyst and confirmed that the active sites were NiOOH species. DTF calculations showed that Fe doping raised the d-states of the Ni atoms in Ni0.5Fe0.5Se-s/NF closer to the Fermi level than those of the Ni atoms in NiSe/NF, which led to significant improvement in the electrical conductivity. Benefiting from these properties, Ni0.5Fe0.5Se-s/NF required low overpotentials of only 185/266 mV and 101/271 mV at 10 and 300 mA cm-2 to drive the OER and HER in 1 M KOH solutions, respectively, and the assembled Ni0.5Fe0.5Se-s/NF||Ni0.5Fe0.5Se-s/NF system only required an ultralow potential of 1.48 V at 10 mA cm-2 to catalyze stable water splitting for more than 60 h. This work provides a new strategy for designing advanced bifunctional electrocatalysts to achieve overall water splitting. © 2023, The Authors. All rights reserved.

关键词： Selenium compounds

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Simulation Analysis of Mechanical Response of Wire Bonding in SiP under Thermal-mechanical-electrical Coupling Load 3

Simulation Analysis of Mechanical Response of Wire Bonding i...

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3rd IEEE International Conference on Integrated Circuits, Technologies and applications, ICTA 2020

作者： Chen, Fangzhou Chen, Si Zhou, Bin Huang, Yun Qin, Fei Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China Beijing University of Technology Beijing China

ISBN: (纸本)9781728180328

The heat dissipation of chips rise the risk for reliability of the system in package (SiP). Sequential coupling FEM simulation method was adopted to evaluate the reliability of SiP. The sub-model technology was used to analyze the thermo-mechanical response of gold wire leads in the whole SiP device. Based on the simulation, the stress and temperature distribution of the lead wires are obtained. The maximum value is compared with the ultimate strength to evaluate the reliability of the product under working conditions. © 2020 IEEE.

关键词： System-in-package

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Research on mechanism of improving the cut-off frequency of terahertz Schottky diodes in air-bridge structures by structure optimization

Research on mechanism of improving the cut-off frequency of ...

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International Conference on (ICEPT) electronic Packaging technology

作者： Yuebo Liu Ke Zhang QiuLing Qiu Xi Luo Xiaoting Chen Ruihan Liu Honghui Liu Reliability Physics and Application Technology of Electronic Component Key Laboratory China Electronic Product Reliability and Environmental Testing Research Institute (CEPREI) Guangzhou China Reliability Research and Analysis Centre China Electronic Product Reliability and Environmental Testing Research Institute (CEPREI) Guangzhou China Components and materials sector data center China Electronic Product Reliability and Environmental Testing Research Institute (CEPREI) Guangzhou China State Key Laboratory of High Power Semiconductor Lasers Changchun University of Science and Technology Changchun China School of Materials Science and Engineering Xiamen University of Technology Xiamen China School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan China Testing technology Research Center China Electronic Product Reliability and Environmental Testing Research Institute (CEPREI) Guangzhou China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

In the realm of air bridge structures for Schottky barrier diodes operating in the millimetre wave or terahertz band, cut-off frequency serves as a critical metric for gauging device performance. This research holds significance in guiding device design and enhancing performance by refining the device's architecture, thereby reducing capacitance values and elevating cut-off frequency without adding complexity to the manufacturing process. In this study, we investigate how the shape and spacing of mesas or pads impact device capacitance through electrostatic field simulations, leveraging Maxwell's capacitance matrix and mutual capacitance matrix. Simulation analysis and experimental validation reveal that devices with circular Schottky contact electrode pads and minimal pad area exhibit lower capacitance values. Furthermore, we observe that the capacitance of the device initially decreases and then increases with the length of the air bridge. An optimal air bridge length exists that minimizes the capacitance of the device. This research offers valuable insights for refining these devices.

关键词： Electrodes Performance evaluation Schottky diodes Shape Atmospheric modeling Cutoff frequency Schottky barriers

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Influence of the acceptor-Type trap on the characteristic of the short-channel GaN MOS-HEMT 15

Influence of the acceptor-Type trap on the characteristic of...

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15th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2020

作者： Shi, Yijun Fu, Zhiwei Yao, Bin Chen, Si Chen, Yiqiang Zhou, Bin Huang, Yun Wang, Zhizhe Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510610 China

ISBN: (纸本)9781728162355

In this work, the influences of the acceptor-Type trap (located at GaN/insulator interface and GaN buffer layer) on the threshold voltage and 2-dimension electron gas (2DEG) density are analyzed for short-channel GaN MOS-HEMT. Particularly, the influence of the acceptor-Type trap on short-channel effect in short-channel GaN MOS-HEMT is analyzed and modeled for the first time. The analyzed results have shown that the acceptor-Type trap plays an important role on the threshold voltage, 2DEG density, and short-channel effect. The calculated results are well supported by the numerical simulation and experimental measurement, which verified the correctness and accuracy of the presented model to predict the dependence of threshold voltage, 2DEG density, and short-channel effect on acceptor-Type trap. © 2020 IEEE.

关键词： Gallium nitride

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Phonon Transport Across Gan-Diamond Interface: The Nontrivial Role of Pre-Interface Vacancy-Phonon Scattering

SSRN

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SSRN 2023年

作者： Yang, Chao Wang, Jian Ma, Dezhi Li, Zhiqiang He, Zhiyuan Liu, Linhua Fu, Zhiwei Yang, Jia-Yue School of Energy and Power Engineering Shandong University Jinan250100 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510610 China Optics & Thermal Radiation Research Center Institute of Frontier and Interdisciplinary Science Shandong University Qingdao266237 China

Diamond substrate with superior thermal conductivity has been the most promising heat sink to solve the heat dissipation issues in GaN-based power electronics. The phonon transport behaviors across the GaN-diamond interface crucially determine the thermal performance and still remain largely unexplored especially considering the presence of pre-interface vacancies. Herein, the influence of localized high-concentration Ga/N atomic vacancies on phonon transport across the GaN-diamond interface is fully investigated using non-equilibrium molecular dynamics. The calculated interface thermal resistance (ITR) of the perfect GaN-diamond interface at room temperature is approximately 1.5 m2·K/GW, consistent with prediction of the diffusion mismatch model. After introducing the Ga/N vacancies at a concentration of 30%, the existence of vacancy-phonon scattering increases the interfacial thermal resistance (ITR) by up to 67%. Analyzing the phonon density of states and the spectral heat current, the heat flux contributed by GaN high-frequency phonons decreases after introducing vacancy defects. This is attributed that the vacancy-phonon scattering in GaN enhances anharmonic phonon scattering, and the phonon energy is redistributed among different phonon modes. Moreover, the collective vibration of propagation phonons is disrupted randomly by the vacancy-phonon scattering. This work aims to understand the influence of vacancy-phonon scattering on the phonon transport across GaN-diamond interface and provide helpful guidance to engineering such interface for better heat dissipation performance. © 2023, The Authors. All rights reserved.

关键词： Diamonds

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Experimental Evaluation of Dynamic On-resistance and Switching Performance of Cascode GaN HEMTs

Experimental Evaluation of Dynamic On-resistance and Switchi...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Yao Li Xuan He Liang He Zhiyuan He Yiqiang Ni Xiaobiao Han Jun Liu School of Electrical Engineering University of South China Hengyang China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits School of Electronics and Information Engineering Anhui University Hefei China

ISBN: (数字)9798350329988

ISBN: (纸本)9798350329995

The dynamic on-resistance degradation and switching performance of a commercial 650 V cascode GaN power device are evaluated. A double-pulse test platform is used to investigate the dynamic on-resistance behaviors with various off-state drain bias voltages, drain currents, and off-state stress times under hard-switching conditions. To evaluate switching performance, an Si-based metal-oxide-semiconductor field-effect transistor (MOSFET) is used as a reference for comparing dynamic on-resistance and switching energy loss with cascode GaN high-electron-mobility transistors (HEMT). The test results indicate that higher off-state drain bias and drain current lead to more severe dynamic on-resistance degradation. Moreover, with a higher switching speed, the cascode GaN HEMT demonstrates a reduced switching energy loss compared to that of the Si-based MOSFET.

关键词： Degradation Performance evaluation MOSFET Energy loss Switches HEMTs Transistors Stress Switching circuits Testing

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Degradation Mechanism and Failure Analysis of Planar Type SiC MOSFETs Under Cyclic Stress of Surge Current 13

Degradation Mechanism and Failure Analysis of Planar Type Si...

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13th International Conference on reliability, Maintainability, and Safety, ICRMS 2022

作者： Lin, Yihang Chen, Y.Q. Geng, Kuiwei Hou, Bo School of Microelectronics South China University of Technology 777 Xinye Avenue Guangzhou511442 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The No.5 Electronics Research Institute The Ministry of Industry and Information Technology Guangzhou Guangzhou China Sino-Singapore International Joint Research Institute No. 8 Fenghuang San Road Guangzhou Knowledge City Guangzhou510700 China

ISBN: (数字)9781665486903

ISBN: (纸本)9781665486903

The degradation behavior of planar silicon carbide metal oxide semiconductor field effect transistors (SiC MOSFETs) in terms of electrical characteristics is explored in this work under cyclic stress of surge current. Before and after surge current stress, planar-type SiC MOSFET is subjected to scanning electron microscope (SEM)-based failure analysis. During the surge current cyclic stress investigations, the accumulation of oxide trap charge and interface trap density leads to a drop in the threshold voltage(Vth) under surge current stress, according to the experimental data. The on-resistance(Rds(on)) displays the opposite tendency to the Vth during surge current cycling. The fact that it is a degradation phenomenon induced by the combined effect of Vth and package degradation caused by repetitive cycle thermal stress of the device is confirmed by testing. According to SEM studies, the major reason of SiC MOSFET failure following surge current cycling stress is that the surge current causes the Aluminum (Al) at the source terminal to melt and subsequently enter into the gate terminal, resulting in a gate-source short circuit and device failure. © 2022 IEEE.

关键词： Silicon carbide

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