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International Conference on (ICEPT) electronic Packaging technology

作者： Ying Shi Shaohua Yang Fugen Wu Huafeng Dong State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment and School of Materials and Energy Guangdong University of Technology Guangzhou P.R. China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory No.5 Electronics Research Institute of Ministry of Industry and Information Technology (MIIT) Guangzhou P.R. China School of Physics and Optoelectronic Engineering Guangdong University of Technology Guangzhou P.R. China

electronic products and devices including personal computers, servers and mobile phones are moving towards high performance and high integration to meet the demands of users. As the core components in electronic products and devices, the reliability and stability of printed circuit board assemblies (PCBAs) are urgently needed to be ensured. Inspired by these requirements, printed circuit board assemblies with ball grid arrays (BGAs), which have better electrical performance, are becoming the preferred choice for many electronic products and devices. Herein, the morphology and chemical composition of blind via cracks in BGA-PCBAs were mainly investigated by scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) to determine their failure mechanism. Tthe temperature distribution, stress and strain at various power levels were analyzed by performing finite element simulations of typical BGA solder ball and blind via structures. Our findings indicated that the stresses concentrated at the connection between the blind via and the inner copper layer, which coincided with the failure site of the blind via. Meanwhile, the shear force would increase with the enhancement of chip power consumption and blind via temperature. Besides, this study provides critical insights for ensuring the reliability of BGA-PCBA, which will help manufacturers improve the fabricating methods of BGA-PCBs, thus greatly promoting the performance and stability of electronic products and devices.

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An R-SIFT Image Matching Intelligent Algorithm Applied to Hardware Trojan Detection

An R-SIFT Image Matching Intelligent Algorithm Applied to Ha...

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2021 International Conference on Cloud Computer, IoT and Intelligence System, CCIIS 2021

作者： Sun, Chen Liang, Pujiang Li, Lingling Ma, Jingjing Jiao, Licheng Liu, Fang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou511370 China Key Laboratory of Intelligent Perception and Image Understanding of Ministry of Education International Research Center for Intelligent Perception and Computation Joint International Research Laboratory of Intelligent Perception and Computation School of Artificial Intelligence Xidian University Xi'an710071 China

Malicious modification, deletion or addition of some modules in the integrated circuits (ICs) will cause the chip to be attacked, which is called Hardware Trojans (HTs). Reverse engineering (RE) is a classic destructive method and widely used in HTs detection. However, RE is very time-consuming and error prone. In this paper, based on RE, we propose the R-SIFT algorithm to match image and reformulate the Trojan detection problem as change detection problem. For the R-SIFT algorithm, the ratio of exponentially weighted averages (Roewa) operator is introduced into the scale-invariant feature transform (SIFT) algorithm. Experiments show that the proposed method has 7 to 56 times more matching points than the original SIFT can be effectively applied to HTs detection. © Published under licence by IOP Publishing Ltd.

关键词： Reverse engineering

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reliability evaluation of supercapacitors based on pseudo-failure calendar lifetime distribution

Reliability evaluation of supercapacitors based on pseudo-fa...

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12th International Conference on Quality, reliability, Risk, Maintenance, and Safety Engineering (QR2MSE 2022)

作者： P. Yu G. Wang Y. Huang C. Huang G. Lu School of Electric Power Engineering South China University of Technology Guangzhou People's Republic of China Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou People's Republic of China Technology and Planning Office China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou People's Republic of China

Supercapacitors are new types of electrical energy storage components with an electric double layer. Ageing characteristics, lifetime and reliability evaluation are of great significance for quality evaluation and rational use. This paper focused on the pseudo-failure calendar lifetime distribution and reliability evaluation of supercapacitors. High-temperature accelerated calendar ageing test of supercapacitors is carried out, and equivalent series resistance and capacitance were tested. Pseudo-lifetime is calculated and distribution is fitted. Fitting results showed that the pseudo-lifetime of supercapacitors is more in line with Weibull distribution. Finally, the reliability curve and its bounds with 95% confidence are made, as a result of the reliability evaluation of supercapacitors.

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Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design

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science China(Information sciences) 2021年第4期64卷 238-240页

作者： Jianjian WANG Jinshun BI Gang LIU Hua BAI Kai XI Bo LI Sandip MAJUMDAR Lanlong JI Ming LIU Zhangang ZHANG Institute of Microelectronics Chinese Academy of Sciences School of Electronics and Information Engineering Tianjin Polytechnic University Beijing Relitech Co. Ltd. Department of Science and Technology ICFAI University Tripura Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute

Dear editor,Non-volatile static random access memory (nvS RAM) with a 6-transistor 2-ferroelectric capacitor (6T2C) structure has been proposed, which meets requirements such as high operating speed and non-volatile m... 详细信息

关键词： Information Systems and Communication Service

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Analysis of Internal Atmosphere of InGaAs Detectors with Different Degassing Conditions

Analysis of Internal Atmosphere of InGaAs Detectors with Dif...

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System reliability and Safety Engineering (SRSE), International Conference on

作者： Canxiong Lai Wen Sun Shaohua Yang Bin Zhou Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics Shanghai China

ISBN: (纸本)9781665401616

the internal atmosphere composition of the cavity package of InGaAs detector has an important impact on its reliability. In this paper, the internal atmosphere contents of the detectors prepared at different degassing conditions are analyzed. The results show that vacuum baking at a relatively low temperature such as 45°C can reach an acceptable internal atmosphere level. Higher baking temperature °fif ((db further reduce the moisture content to about 1000ppmv, which would make the detector more reliable for long-term operation and thus be an ideal choice for degassing. Besides vacuum baking, the degassing effectiveness of nitrogen gas washing is also confirmed to be acceptable, although the moisture and oxygen contents are higher than those of vacuum baking.

关键词： Vacuum systems Atmosphere Moisture Detectors reliability engineering Indium gallium arsenide Temperature control

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Hardware Trojan Detection Based on SRC

Hardware Trojan Detection Based on SRC

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Youth Academic Annual Conference of Chinese Association of Automation (YAC)

作者： Chen Sun Liye Cheng Liwei Wang Yun Huang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (数字)9781728176840

ISBN: (纸本)9781728176857

The security of integrated circuits (IC) plays a very significant role on military, economy, communication and other industries. Due to the globalization of the integrated circuit (IC) from design to manufacturing process, the IC chip is vulnerable to be implanted malicious circuit, which is known as hardware Trojan (HT). When the HT is activated, it will modify the functionality, reduce the reliability of IC, and even leak confidential information about the system and seriously threatens national security. The HT detection theory and method is hotspot in the security of integrated circuit. However, most methods are focusing on the simulated data. Moreover, the measurement data of the real circuit are greatly affected by the measurement noise and process disturbances and few methods are available with small size of the Trojan circuit. In this paper, the problem of detection was cast as signal representation among multiple linear regression and sparse representation-based classifier (SRC) were first applied for Trojan detection. We assume that the training samples from a single class do lie on a subspace, and the test samples can be represented by the single class. The proposed SRC HT detection method on real integrated circuit shows high accuracy and efficiency.

关键词： Integrated circuits Training Size measurement Hardware Trojan horses Security Noise measurement

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Electromagnetic Pattem Extraction and Classification of Integrated Circuit under Different Operation State 12

Electromagnetic Pattem Extraction and Classification of Inte...

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12th International Workshop on the Electromagnetic Compatibility of Integrated Circuits, EMC COMPO 2019

作者： Chen, Rongquan Wang, Yulong Zhang, Hang Li, Zeyi Shao, Weiheng Fang, Wenxiao Xiao, Meizhen Wang, Lei Tian, Xinxin He, Zhiyuan Liu, Hengzhou Xu, Xuecheng Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9781728142616

Extracting electromagnetic patterns by near field scanning can provide concrete information about a device under test (DUT), which benefits a lot when locating EMI sources. In this paper, we extracted the electromagnetic pattern of DUT under different operation state and classify the pattern with a machine learning algorithm for simplifying post-process procedure and better EMC engineering. The result showed different operation state lead to different electromagnetic emission. © 2019 IEEE.

关键词： Electromagnetic compatibility

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Boosted Energy Storage Densities in Lead-Free Na0.5bi0.5tio3-Based Thick Film Ceramics Via the Compositional and Microstructural Tailoring

SSRN

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SSRN 2024年

作者： Niu, Xiang Jiang, Yuleng Liang, Wei Liu, Huanwei Jian, Xiaodong Chen, Xianyi Zeng, Wenhan Xu, Mingtao Qie, Dan Zhu, Zichun Liu, Yufeng Tang, Yi Gong, Weiping Zhao, Xiaobo Yao, Yingbang Liang, Bo Tao, Tao Lu, Sheng-Guo Guangdong Provincial Research Center on Smart Materials and Energy Conversion Devices Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter School of Materials and Energy Guangdong University of Technology Guangzhou510006 China School of integrated Circuits Guangdong University of Technology Guangzhou510006 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The 5th Electronics Research Institute The Ministry of Industry and Information Technology Guangzhou510610 China School of Physics and Optoelectronic Engineering Guangdong University of Technology Guangzhou510006 China Department of Materials Science and Engineering National University of Singapore 9 Engineering Drive 1 Singapore117575 Singapore Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices Huizhou University Guangdong Huizhou516001 China

Developing ecologically benign lead-free dielectrics with overall outstanding energy storage properties (ESP) is a fundamentally significant demand and challenge for the applications in pulse power systems. Herein, a new type of lead-free (0.74-x)Bi0.5Na0.5TiO3-0.06BaTiO3-0.2SrTiO3-xBi(Mg0.5Zr0.5)O3 (NBT-xBMZ) relaxor ferroelectric thick film ceramics were designed and prepared via compositional and microstructural optimization. Doping Bi(Mg0.5Zr0.5)O3 (BMZ) effectively widened the bandgap, introduced polar nanoregions, enhanced the relaxor ferroelectric characteristics, improved the impedances, and ultimately improved the dielectric breakdown strength (DBS) as well as the ESP. As confirmed by both the selected area electron diffraction patterns and the Rietveld refinement of X-ray diffraction patterns, multiphase coexistence structure was successfully constructed, resulting in merged polarization and delayed polarization saturation. Multiphase coexistence structure, pinched polarization-electric field hysteresis loops and ultrahigh DBS collectively boost the ESP. Remarkably, a recoverable energy storage density of 15.79 J/cm3 and an energy storage efficiency of 92.86% were achieved in NBT-0.22BMZ thick film. Benefiting from the microstructural optimization, excellent thermal stability (20–160 °C), frequency stability (1–200 Hz), and fatigue endurance (> 104 cycles) were realized for the same composition. Additionally, the NBT-0.22BMZ thick film also exhibited a large power density of 582.47 MW/cm3 and an ultrafast discharge speed of ~44.0 ns. This work provides a novel strategy to develop next-generation dielectric capacitors with superior energy storage properties for applications in advanced pulse power systems. © 2024, The Authors. All rights reserved.

关键词： Polarization

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Degradation behavior and mechanism of SiC power MOSFETs by total ionizing dose irradiation under different gate voltages

Degradation behavior and mechanism of SiC power MOSFETs by t...

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Workshop on Wide Bandgap Power Devices and applications in Asia (WiPDA Asia)

作者： Kexin Gao Yiqiang Chen Shuaizhi Zheng Min Liao Xinbing Xu Meng Lu Xiangtan University Hunan China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou Guangdong China

ISBN: (纸本)9781665448178

In this work, the degradation behavior of the SiC power MOSFETs under total ionizing dose (TID) irradiation at different gate voltages was investigated. To simulate the radiation environment, 60CO was used as the $\gamma$ -ray source, the dose rate was 50rad/s, and the cumulative absorbed dose was 1M Rad. The experimental results show that when a gate voltage is impressed to the test device, the threshold voltage is obviously negative shift, the output characteristic and capacitance curve also have negative shift phenomenon. Meanwhile, the device with positive gate voltage has more obvious shift than negative bias voltage. Furthermore, the blocking characteristics of the device had a noticeable change after irradiation, it means that the TID effect has an effect on the body diode. Changes in gate capacitance were also analyzed. The reason for this degradation could be that the high-energy particle radiation exciting plenty of electron-hole pairs in the oxide layer of MOSFET, the electrons flow out of the metal electrode after radiation, and the holes are captured by the oxide layer to form a new interface trap charge. This paper may have some reference value for the application of SiC power MOSFET in aerospace.

关键词： Degradation Performance evaluation MOSFET Silicon carbide Photonic band gap Asia Logic gates

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Degradation mechanism of D-mode GaN HEMT based on high temperature reverse bias stress

Degradation mechanism of D-mode GaN HEMT based on high tempe...

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Workshop on Wide Bandgap Power Devices and applications in Asia (WiPDA Asia)

作者： Meng Lu Yiqiang Chen Min Liao Chang Liu Shuaizhi Zheng Kexin Gao Xiangtan University Xiangtan China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou Guangzhou China

ISBN: (纸本)9781665448178

This paper systematically discusses the degradation of reliability of depleted gallium nitride devices under short to long-term high temperature reverse bias (HTRB) stress. The electrical parameters of the device during the whole process were obtained by the stress-measure-stress alternation experimental scheme. We believe that the Schottky barrier decreases and the channel conduction resistance increases in the process of high temperature and high field stress. This conclusion can be verified by the gate-lag characteristics. It is a new phenomenon that capacitor degradation can be divided into three stages in the experiment. Further analysis shows that the device has three processes: dielectric layer consumption-AlGaNlGaN layer interface donor state increase-AlGaN barrier layer degradation FN emission and trap-assisted tunneling. There is also a positive correlation between capacitance and gate leakage. When the channel is rapidly depleted, the capacitance decreases gradually and the leakage reaches saturation. Current saturation is mainly because the external voltage has little effect on the longitudinal electric field between Schottky electrode and Ohm electrode, but has a great effect on the transverse electric field. The conclusion of this paper will be of reference significance to the manufacturing process and the life of the device under normal operation.

关键词： Degradation Electrodes Temperature Asia HEMTs Capacitance reliability

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