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2020 International Conference on Applied physics and Computing, ICAPC 2020

作者： Su, Wei Luo, Wenhao Dong, Xianshan Liu, Renhuai MOE Key lab of Disaster Forecast and Control in Engineering Guangzhou 510632 China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability Environmental Testing Research Institute Guangzhou510610 China School of Mechanics and Construction Engineering Jinan University Guangzhou510632 China

In this paper, the locally thinned three-way structure under internal pressure is analyzed based on the theory of plastic strengthening effect and limit analysis. A finite element model is presented through ANSYS commercial software to simulate the mechanical properties of orthogonal and oblique three-way structures. This paper systematically analyses how the shape and size of the thinning effect the plastic limit load of the pipe and what is the typical failure mode of plastic failure. Some valuable conclusions are drawn, which provide a useful reference for the design and production of the tee pipe. © 2020 Institute of physics Publishing. All rights reserved.

关键词： Finite element method

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Performance-based reliability Prediction of Power Supply Considering Degradation Uncertainties

Performance-based Reliability Prediction of Power Supply Con...

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System reliability and Safety Engineering (SRSE), International Conference on

作者： Hao Niu Shaohua Yang Wenyuan Liao Canxiong Lai Wen Sun Science and Technology on Reliability Physics and Application of Electronic Component Laboratory No.5 Electronics Research Institute of Ministry of Industry and Information Technology (MIIT) Guangzhou China Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics Shanghai China

ISBN: (纸本)9781665401616

reliability prediction is an effective approach to find weak links and evaluate whether the product satisfies its reliability requirement during the design phase. For the highly reliable product, it is far difficult to predict its reliability level according to the traditional method that largely relies on historical data from reliability handbooks. This paper proposes a performance-based reliability prediction method, which makes use of degradation to reflect product's health conditions. Additionally, a degradation model considering multivariate uncertainties such as operation conditions and parameter randomness is proposed to describe soft failures induced by degradation. A case study of power supply is illustrated to show the effectiveness and feasibility of the proposed method and degradation model for reliability prediction.

关键词： Degradation Uncertainty Power supplies Sensitivity analysis Predictive models Maintenance engineering reliability engineering

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Analytical and Measurement-Based Method for Diagnosing the Fault of Channels in TSV-Based 3D ICs

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Journal of physics: Conference Series 2022年第1期2242卷

作者： Chenbing Qu Linting Zheng Liwei Wang Chen Sun Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou 511370 China

Three-dimensional integrated circuits (3D ICs) based on through silicon via (TSV) technology can effectively solve many bottlenecks in the development of ICs. It has rapidly developed into a key cutting-edge technology representing the medium and long-term sustainable development of microelectronics industry. Process fluctuation causes TSV process defects, resulting in the change of structural parameters of RDL and TSV interconnection structure. Finally, it leads to the degradation of performance parameters and functional failure of 3D interconnection and devices. Aiming at the high-resistance and open-circuited faults of 3D ICs, this paper develops an analysis method based on micro nano machining and detection technology. The electrical characteristics and images of typical chain TSV interconnections are analyzed by scanning electron microscope high-resolution imaging. The mechanism of fault diagnosis is based on potential difference and electron transfer.

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Influence of the acceptor-type trap on the characteristic of the short-channel GaN MOS-HEMT

Influence of the acceptor-type trap on the characteristic of...

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International Conference on Solid-State and Integrated Circuit technology

作者： Yijun Shi Zhiwei Fu Bin Yao Si Chen Yiqiang Chen Bin Zhou Yun Huang Zhizhe Wang The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

In this work, the influences of the acceptor-type trap (located at GaN/insulator interface and GaN buffer layer) on the threshold voltage and 2-dimension electron gas (2DEG) density are analyzed for short-channel GaN MOS-HEMT. Particularly, the influence of the acceptor-type trap on short-channel effect in short-channel GaN MOS-HEMT is analyzed and modeled for the first time. The analyzed results have shown that the acceptor-type trap plays an important role on the threshold voltage, 2DEG density, and short-channel effect. The calculated results are well supported by the numerical simulation and experimental measurement, which verified the correctness and accuracy of the presented model to predict the dependence of threshold voltage, 2DEG density, and short-channel effect on acceptor-type trap.

关键词： Gallium nitride Threshold voltage MODFETs HEMTs Electron traps Logic gates Aluminum oxide

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Research on package reliability of the fiber optic hydrophone based on SEM

Research on package reliability of the fiber optic hydrophon...

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International Conference on (ICEPT) electronic Packaging technology

作者： Shuwang Li Guoguang Lu Canxiong Lai Shaohua Yang Yun Huang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (数字)9781728168265

ISBN: (纸本)9781728168272

As underwater acoustic sensor, the fiber optic hydrophone needs to be used in harsh marine environment for decades. A reliable packaging structure of the fiber optic hydrophone is critical. On one hand, the package structure needs to have a good sound transmission performance to achieve high-precision underwater acoustic detection. On the other hand, it also needs to ensure enough strength to resist hydrostatic pressure and insulate sea water. Therefore, the combination designed of polyurethane packaging and metal matrix is adopted, and the interface was bonded by adhesive. Obviously, the bonded strength of interface is one determined packaging reliability factor, and the proper thickness of adhesive is the guarantee of bonded strength. In other words, if the thickness is not properly controlled, the bonded strength will not enough, and the packaging interface will become the weak links. So, effective measurement and characterization method is the basis of thickness control. In this paper, a research on package reliability of fiber optic hydrophone based on scanning electron microscope (SEM) has been present. In details, two sample preparation methods of breezing method and grinding method were introduced, further the thickness of the adhesive was measured by SEM. The results show that both of two methods can measure the thickness with submicron accuracy, and the comparison test of the same sample shows that two methods have good consistency, and the result is about 12 microns which is a lower than the required adhesive thickness of 25 microns, this will result in the adhesive strength cannot meet the reliable requirements, and became a weak links of reliability. Further analysis also show that, methods proposed in this paper can accurately measure the thickness of adhesive in submicron scale and effectively find the key process defects. This method will help to improve the packaging reliability of the fiber optic hydrophone.

关键词： reliability Optical fibers Sonar equipment Micrometers Thickness measurement Packaging Scanning electron microscopy

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Prediction of electromigration lifetime of copper pillar bumps in ceramic packaging device

Prediction of electromigration lifetime of copper pillar bum...

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International Conference on (ICEPT) electronic Packaging technology

作者： Fangzhou Chen Si Chen Zhiwei Fu Yun Huang Fei Qin Tong An Beijing University of Technology Beijing China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (数字)9781728168265

ISBN: (纸本)9781728168272

In this study, a model for predicting the electromigration lifetime of copper pillar bumps in ceramic packaging device was established. In order to determine the relevant parameters in the Black model of electromigration lifetime prediction, three current density levels, 2.5×10 4 A/cm 2 , 3×10 4 A/cm 2 and 3.5×10 4 A/cm 2 , were selected to conduct the electromigration tests on the Cu pillar bump in ceramic package samples at ambient temperatures of 125°C and 160°C respectively. SEM was used to observe the failure mode of bumps under different temperature and current density. The experiment of on-line monitoring of the bump resistance was used to monitor the resistance information in real time, and then obtain the electromigration lifetime of the copper pillar bumps under each load condition. By determining the current influence index n and the failure activation energy Q, this paper defines the black model of the electromigration lifetime prediction of the copper pillar bumps in the ceramic package.

关键词： Copper Electromigration Resistance Current density Ceramics Couplings Monitoring

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Simulation Analysis of Mechanical Response of Wire Bonding in SiP under Thermal-mechanical-electrical Coupling Load

Simulation Analysis of Mechanical Response of Wire Bonding i...

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IEEE International Conference on Integrated Circuits, Technologies and applications (ICTA)

作者： Fangzhou Chen Si Chen Bin Zhou Yun Huang Fei Qin Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China Beijing University of Technology Beijing China

ISBN: (数字)9781728180328

ISBN: (纸本)9781728180335

The heat dissipation of chips rise the risk for reliability of the system in package (SiP). Sequential coupling FEM simulation method was adopted to evaluate the reliability of SiP. The sub-model technology was used to analyze the thermo-mechanical response of gold wire leads in the whole SiP device. Based on the simulation, the stress and temperature distribution of the lead wires are obtained. The maximum value is compared with the ultimate strength to evaluate the reliability of the product under working conditions.

关键词： Heating systems Wires Lead reliability Integrated circuit modeling Stress Load modeling

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Thermal Annealing of Total Ionizing Dose Effect for Partially-Depleted SOI MOSFET

Thermal Annealing of Total Ionizing Dose Effect for Partiall...

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European Conference on Radiation and its Effects on components and Systems (RADECS)

作者： Chao Peng Zhifeng Lei Zhangang Zhang Yujuan He Yun Huang Yunfei En Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

A radiation hardening process of shallow trench isolation oxide is proposed for 130 nm PDSOI technology. The TID effect and high temperature annealing effect after irradiation are investigated for the PDSOI nMOSFET.

ISBN: (数字)9781665412353

ISBN: (纸本)9781665429597

关键词： Performance evaluation MOSFET Annealing Radiation hardening (electronics) Silicon-on-insulator Silicon nitride MOSFET circuits

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Manganese-Based Lithium-Ion Battery: Mn_(3)O_(4) Anode Versus LiNi_(0.5)Mn_(1.5)O_(4) Cathode

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Automotive Innovation 2020年第2期3卷 123-132页

作者： Wenfeng Mao Wei Yue Feng Pei Xiaochen Zhao Xiangdong Huang Guo Ai Tianjin Key Laboratory of Structure and Performance for Functional Molecules MOE Key Laboratory of Inorganic-Organic Hybrid Functional Material ChemistryCollege of ChemistryTianjin Normal UniversityTianjin 300387China Guangzhou Automobile Group Co. Ltd.Guangzhou 511434China School of Materials Science and Engineering South China University of TechnologyGuangzhou 510641China College of Physics and Materials Science Tianjin Normal UniversityTianjin 300387China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory No.5 Electronic Research Institute of the Ministry of Industry and Information TechnologyGuangzhou 510610China

Lithium-ion batteries(LIBs)are widely used in portable consumer electronics,clean energy storage,and electric vehicle ***,challenges exist for LIBs,including high costs,safety issues,limited Li resources,and manufacturingrelated *** this paper,a novel manganese-based lithium-ion battery with a LiNi_(0.5)Mn_(1.5)O_(4) ‖ Mn_(3)O_(4) structure is reported that is mainly composed of environmental friendly manganese compounds,where Mn_(3)O_(4) and LiNi_(0.5)Mn_(1.5)O_(4) (LNMO)are adopted as the anode and cathode materials,*** proposed structure improves battery safety and reduce costs compared with current battery technology,provides comparable energy density with that of traditional graphite-based ***,the characteristics and the electrochemical performances of the Mn_(3)O_(4) anode and the LNMO cathode are investigated separately against Li metal in half cell configurations,with promising performances being demonstrated by both ***,a full cell structure with Mn_(3)O_(4) against LNMO is constructed that provides an average discharge voltage of 3.5 V and an initial specific capacity of 86.2 mA;h;g−*** importantly,the electrochemical performance of the LNMO‖ Mn_(3)O_(4) full cell and its possible decay mechanisms are discussed systemically;and efficient strategies are proposed to further improve both the electrochemical performance of Mn_(3)O_(4) and the stability of LNMO.

关键词： Mn_(3)O_(4) LiNi_(0.5)Mn_(1.5)O_(4) Chemical synthesis Composite Energy storage

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Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs

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Nuclear science and Techniques 2019年第5期30卷 92-102页

作者： Chang Cai Tian-Qi Liu Xiao-Yuan Li Jie Liu Zhan-Gang Zhang Chao Geng Pei-Xiong Zhao Dong-Qing Li Bing Ye Qing-Gang Ji Li-Hua Mo Institute of Modern Physics Chinese Academy of Sciences University of Chinese Academy of Sciences School of Physical Science and Technology Lanzhou University Academy of Shenzhen State Microelectronic Co. Ltd. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory

Single event effects of 1-T structure programmable read-only memory(PROM) devices fabricated with a 130-nm complementary metal oxide semiconductorbased thin/thick gate oxide anti-fuse process were investigated using heavy ions and a picosecond pulsed laser. The cross sections of a single event upset(SEU) for radiationhardened PROMs were measured using a linear energy transfer(LET) ranging from 9.2 to 95.6 MeV cm^2mg^(-1).The result indicated that the LET threshold for a dynamic bit upset was ～ 9 MeV cm^2mg^(-1), which was lower than the threshold of ～ 20 MeV cm^2mg^(-1) for an address counter upset owing to the additional triple modular redundancy structure present in the latch. In addition, a slight hard error was observed in the anti-fuse structure when employing209 Bi ions with extremely high LET values(～ 91.6 MeV cm^2mg^(-1)) and large ion fluence(～ 1×10~8 ions cm^(-2)). To identify the detailed sensitive position of a SEU in PROMs, a pulsed laser with a 5-μm beam spot was used to scan the entire surface of the *** revealed that the upset occurred in the peripheral circuits of the internal power source and I/O pairs rather than in the internal latches and buffers. This was subsequently confirmed by a ^(181)Ta experiment. Based on the experimental data and a rectangular parallelepiped model of the sensitive volume, the space error rates for the used PROMs were calculated using the CRèME-96 prediction tool. The results showed that this type of PROM was suitable for specific space applications, even in the geosynchronous orbit.

关键词： Anti-fuse PROM Single event effects Heavy ions Pulsed laser Space error rate

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