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Thermal-Electric-Mechanical coupling simulation of Cu Pillar Bumps under AC current

Thermal-Electric-Mechanical coupling simulation of Cu Pillar...

International Conference on Numerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz applications (NEMO)

作者： Kai Li Zhiwei Fu Si Chen GuoYuan Li Jile Xu School of Micro-Electronics South China University of Technology Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (数字)9781728169668

ISBN: (纸本)9781728169675

With the development of 3D IC, the electromigration of Cu pillar bumps under AC conditions is currently given wide attention. The thermal-electric-mechanical coupling simulation was realized by using the direct coupling element of ANSYS software. We find out that the maximum thermal gradient (TG) is located at IMC layer in the Cu pillar bumps. Due to the large CTE mismatch between the Cu trace and the Si chip, the maximum stress is occurred within the Cu trace. The maximum current density (JS) is located in the middle of the Cu trace and at the corner of the Cu pillar. In addition, during the loading of AC current, with the increase of loading time, the stress and temperature will both increase in the early stage of loading. However, with the current loading continues (t ≥ 0.625s), the temperature and stress gradually maintain at a stabilized level, but show significant fluctuation. With the increase of current frequency, the curves of fluctuation stage will be more and more smooth, and gradually fit to the curve of DC. It is also found that there is a lag between temperature/stress and AC current in the fluctuation stage.

关键词： Couplings Heating systems Fluctuations Loading Silicon Finite element analysis Stress

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Novel physical unclonable functions base on RRAM for hardware trojan horse defense technology

Novel physical unclonable functions base on RRAM for hardwar...

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International Conference on Intelligent Computing, Communication and Devices, ICCD 2017

作者： Yuan, Chi Yuan, Liu Yun-Fei, En Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The Fifth Electronics Research Institute of Ministry of Industry and Information Technology Guangzhou510610 China

ISBN: (纸本)9789811089435

This study proposes a hardware Trojan horse (HTH) defense technology that uses a novel structure of physical unclonable function (PUF) which is based on resistive random access memory (RRAM). An application-specific integrated circuit (ASIC) combined with the technology can effectively prevent HTH embedded. Unlike the conventional silicon PUFs, the randomness of RRAM PUF is not based on process variation and is determined by the stochastic switching mechanism of the RRAM devices. It has some advantages over the conventional one of high security, high reliability, and low area. Experimental results show that the HfO2 RRAM devices have good performances about Hamming distance and reliability. This work demonstrates the RRAM PUF that has great potential for HTH defense. © Springer Nature Singapore Pte Ltd. 2019.

关键词： Hardware security

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Analysis of Physical Degradation Mechanisms of Charge Coupled Device Image Sensor

Analysis of Physical Degradation Mechanisms of Charge Couple...

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International Conference on (ICEPT) electronic Packaging technology

作者： Canxiong Lai Shaohua Yang Shuwang Li Guoguang Lu Yubing Lyu Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China Chongqing Optoelectronics Research Institute Chongqing China

ISBN: (数字)9781728168265

ISBN: (纸本)9781728168272

Charge coupled device (CCD) image sensors are important building blocks for high-responsivity, low noise optical cameras. It plays a critical role in applications including astronomical observation, environmental monitoring, and microscopic study. To achieve overall robust system reliability, good knowledge of reliability physics is indispensable. In this paper, we focus on the physical mechanisms of CCD degradation. Firstly, the functional architecture and implementation of CCD are introduced. The CCD consists of three functional domains which are photosensitive array, readout shift register and on-chip amplifier. Metal-Insulator-Semiconductor (MIS) is the basic structure of both photosensitive array and readout shift register. The on-chip amplifier is a multi-stage source-follower structure which consists of metal oxide semiconductor field effect transistors (MOSFETs). Secondly, the physical mechanisms of CCD degradation are studied. The high electric field in the gate insulator of the photosensitive array and readout shift register imposes a reliability concern of dielectric breakdown. For the on-chip amplifier, hot carrier effect would lead to the characteristic parameters degradation. Finally, reliability evaluation methods of CCD are proposed based on the degradation mechanisms and the stress under application condition.

关键词： Charge coupled devices reliability Degradation System-on-chip Logic gates Stress Shift registers

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Measurement and Crosstalk Analysis of Hexagonal TSV Bundle in 3D ICs

Measurement and Crosstalk Analysis of Hexagonal TSV Bundle i...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Chenbing Qu Zhangming Zhu Yunfei En Liwei Wang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The 5th Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou China School of Microelectronics Xidian University Xi'an China

ISBN: (数字)9781728157337

ISBN: (纸本)9781728157344

Hexagonal ground-shielding through silicon vias (TSVs) in 3D ICs are explored based on measurement and simulation. The measured S-parameters of the TSV-bundle part are successfully extracted by de-embedding technique. The results math well with simulations up to 20GHz. The proposed TSV bundle has a good performance of return and insertion loss. For the hexagonal ground TSV shield system, the crosstalk analysis of neighbor signals in the TSV shield system is made based on the measurements and simulations. The electronic and magnetic field plots show a good capacitive and inductive coupling isolation for the victim signal TSV with shielding ground TSVs. Compared to those coupled-TSVs systems without ground guide, the ground-shielding TSV as well as coaxial TSV has higher noise over the range of frequencies.

关键词： Couplings Three-dimensional displays Magnetic field measurement Crosstalk Scattering parameters Through-silicon vias Integrated circuit modeling

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Boundary layers defect diagnosis and analysis of Through Silicon Via (TSV)

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International Journal of Performability Engineering 2019年第1期15卷 97-106页

作者： Chen, Yuan Zhang, Peng Xia, Kuiliang Huang, Hongzhong School of Mechanical and Electrical Engineering University of Electronic Science and Technology of China Chengdu611731 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Fifth Electronics Research Institute Ministry of Industry and Information Technology Guangzhou510610 China Analysis and Test Center South China University of Technology Guangzhou510640 China School of Microelectronics Xidian University Xi'an710071 China

TSV technology can achieve heterogeneous integration by stacking different technologies and functions of logic chip, memory, MEMS, etc., as a system. There are many significant advantages for heterogeneous integration in terms of cost, performance, and time to market. TSV technology has the potential to improve 3D packaging. As the important physical connection and electrical connection between the chips, TSV's reliability is undoubtedly the key to determine the reliability of TSV three-dimensional integrated devices. As a new interconnect technology, TSV technology faces many process difficulties and challenges. Its reliability has not been fully studied and guaranteed. The process optimization and reliability improvement of TSV have become a hot topic in recent years. Recognition process defects and analysis of the failure mechanism play important roles in the optimization and improvement of design, production, and use of TSV three-dimensional integrated devices. In this paper, the square TSV and circular TSV with different ratios were researched by microphysical analysis and data analysis. The analysis results revealed the key technological factors and physical mechanism of formation of the TSV defects, which can support TSV device development, production, and reliable application. © 2019 Totem Publisher, Inc. All rights reserved.

关键词： Defects

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High-performance fiber-integrated multifunctional graphene-optoelectronic device with photoelectric detection and optic-phase modulation

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Photonics Research 2020年第12期8卷 1949-1957页

作者： LINQING ZHUO PENGPENG FAN SHUANG ZHANG YUANSONG ZHAN YANMEI LINYU ZHANG DONGQUAN LI ZHEN CHE WENGUO ZHU HUADAN ZHENG JIEYUAN TANG JUN ZHANG YONGCHUN ZHONG WENXIAO FANG GUOGUANG LU JIANHUI YU ZHE CHEN Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes Department of Optoelectronic EngineeringJinan UniversityGuangzhou 510632China Engineering Research Center on Visible Light Communication of Guangdong Province Department of Optoelectronic EngineeringJinan UniversityGuangzhou 510632China Key Laboratory of Visible Light Communications of Guangzhou Jinan UniversityGuangzhou 510632China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510610China

In graphene-based optoelectronic devices,the ultraweak interaction between a light and monolayer graphene leads to low optical absorption and low responsivity for the photodetectors and relative high half-wave voltage for the phase ***,an integration of the monolayer graphene onto the side-polished optical fiber is demonstrated,which is capable of providing a cost-effective strategy to enhance the light–graphene interaction,allowing us to obtain a highly efficient optical absorption in graphene and achieve multifunctions:photodetection and optical phase *** a photodetector,the device has ultrahigh responsivity(1.5×10^(7) A/W)and high external quantum efficiency(>1.2×10^(9)%).Additionally,the polybutadiene/polymethyl methacrylate(PMMA)film on the graphene can render the device an optical phase modulator through the large thermo-optic effect of the *** a phase modulator,the device has a relatively low half-wave voltage of 3 V with a 16 dB extinction ratio in Mach–Zehnder interferometer configuration.

关键词： optoelectronic fiber modulator

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Theoretical Study of Bilayer Composite Barrier Based Ferroelectric Tunnel Junction Memory

Theoretical Study of Bilayer Composite Barrier Based Ferroel...

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International Conference on Numerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz applications (NEMO)

作者： Huali Duan Wenxiao Fang Leitao Liu Wenchao Chen ZJU-UIUC Institute International Campus Zhejiang University Haining China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory Guangzhou China GLOBALFOUNDRIES Inc. Malta NY USA

ISBN: (数字)9781728169668

ISBN: (纸本)9781728169675

In this work, majority carrier tunneling current in Ferroelectric tunnel junction (FTJ) with bilayer composite barrier is simulated theoretically by using finite difference method and Wentzel-Kramers-Brillouin (WKB) method. The simulation results reveal that the metal/Al 2 O 3 /HZO/Si FTJ has a significant enhanced tunneling electroresistance (TER) effect as compared to traditional FTJ, and are also consistent with others' experimental results.

关键词： Simulation Tunneling Numerical models Mathematical model Junctions Optimization Finite difference methods

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Low-Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistors with Aluminum Oxide Gate Insulator

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Chinese physics Letters 2018年第4期35卷 123-126页

作者： Ya-Yi Chen Yuan Liu Zhao-Hui Wu Li Wang Bin Li Yun-Fei En Yi-Qiang Chen School of Electronic and Information Engineering South China University of Technology Cuangzhou 510640 Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Produce Reliability and Environmental Testing Research Institute Guangzhou 510610

Low-frequency noise（LFN） in all operation regions of amorphous indium zinc oxide（a-IZO） thin film transistors（TFTs） with an aluminum oxide gate insulator is investigated. Based on the LFN measured results, we extract the distribution of localized states in the band gap and the spatial distribution of border traps in the gate dielectric,and study the dependence of measured noise on the characteristic temperature of localized states for a-IZO TFTs with Al2 O3 gate dielectric. Further study on the LFN measured results shows that the gate voltage dependent noise data closely obey the mobility fluctuation model, and the average Hooge＇s parameter is about 1.18×10^-*** the relationship between the free carrier number and the field effect mobility, we simulate the LFN using the △N-△μ model, and the total trap density near the IZO/oxide interface is about 1.23×10^18 cm^-3eV^-1.

关键词： Low-Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistors with Aluminum Oxide Gate Insulator Al

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Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool

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Chinese physics B 2018年第6期27卷 336-340页

作者： Zhi-Feng Lei Zhan-Gang Zhang Yun-Fei En Yun Huang Key Laboratory of Low Dimensional Materials ＆ Application Technology of Ministry of Education Xiangtan University Xiangtan 411100 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou 510610 China

In this paper, a simulation tool named the neutron-induced single event effect predictive platform（NSEEP^2） is proposed to reveal the mechanism of atmospheric neutron-induced single event effect（SEE） in an electronic device, based on heavy-ion data and Monte-Carlo neutron transport simulation. The detailed metallization architecture and sensitive volume topology of a nanometric static random access memory（SRAM） device can be considered to calculate the real-time soft error rate（RTSER） in the applied environment accurately. The validity of this tool is verified by real-time experimental results. In addition, based on the NSEEP^2, RTSERs of 90 nm–32 nm silicon on insulator（SOI） and bulk SRAM device under various ambient conditions are predicted and analyzed to evaluate the neutron SEE sensitivity and reveal the underlying mechanism. It is found that as the feature size shrinks, the change trends of neutron SEE sensitivity of bulk and SOI technologies are opposite, which can be attributed to the different MBU performances. The RTSER of bulk technology is always 2.8–64 times higher than that of SOI technology, depending on the technology node, solar activity, and flight height.

关键词： atmospheric neutron single event effects soft error rate Monte-Carlo simulation

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An Online Monitoring Scheme of Output Capacitor’s ESR for DCM Buck

An Online Monitoring Scheme of Output Capacitor’s ESR for D...

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Prognostics and System Health Management Conference (PHM-Qingdao)

作者： Xiaoxing Duan Jian Zou Dengyun Lei Bo Hou Liwei Wang Yun Huang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China

Electrolytic capacitor is widely selected as output capacitor in DC-DC converter, while it has limited reliability. Monitoring the equivalent series resistance (ESR) is an effective method to diagnostic the output capacitor. In this paper, an online monitoring scheme of ESR is present for discontinuous conduction mode (DCM) Buck converters. Based on the output ripple voltage, the model of ESR is established. By sampling the output ripple voltage, the ESR is calculated using the sampled values. The proposed method reduces the current measurement and avoids the change of converter topology. The simulation and experimental results verify the effectiveness of the method.

关键词： 5G mobile communication

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