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International Symposium on Physical & Failure Analysis of Integrated Circuits

作者： Yujuan He Zhifeng Lei Zhangang Zhang Chao Peng Jianke Li Enxia Zhang Yintang Yang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou city R.P.China Vanderbilt University Nashville TN USA Microelectronics Institute Xidian University Xi'an city R.P.China

ISBN: (数字)9781728161693

ISBN: (纸本)9781728161709

The Single Event Functional Interruption (SEFI) effect of the atmospheric neutron radiation in microprocessor parts of automotive electronic systems is analyzed in this study. The white neutron source of CSNS (China Spallation Neutron Source) is used for three automotive electronic Systems to neutron radiation test in the microprocessors in the systems. It shows that the neutron fluence threshold of SEFI varies greatly with the feature size of the device. The 40 nm process device with large feature size do not failure at 5xl0 9 n/cm 2 neutron fluence, but SEFI phenomenon occurs in both devices of 28nm process. The SEFI section and soft error rate of the 28nm process MPU microprocessors are calculated, and the soft error rate is above 10 3 FIT, far exceeding the soft failure rate requirements of automotive electronic systems. It can be seen that large-scale advanced process integrated circuits in automotive electronic systems are susceptible to atmospheric neutron radiation effects, and it will affect automotive safety issues.

关键词： Neutrons Automotive electronics Silicon-on-insulator Error analysis Random access memory reliability Mesons

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Influence of Packaging Forms and Interconnection Structures on Thermal Fatigue reliability of Large-Scale Packaging

Influence of Packaging Forms and Interconnection Structures ...

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International Conference on (ICEPT) electronic Packaging technology

作者： Rourou Jia Bin Zhou Si Chen Tong An Fei Qin Beijing University of Technology Beijing China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (数字)9781728150642

ISBN: (纸本)9781728150659

At present, with the development of the electronic packaging industry, the size of the packaging is getting larger and larger, and the density of the interconnection is getting higher and higher, which brings great challenges to the reliability of the packaged device. Both the packaging forms and the interconnection structures have a great influence on the reliability of the electronic packaging. Column grid array and ball grid array are the two most widely used forms of array interconnects, and the ceramic packaging and plastic packaging are the most widely used forms of packaging. Therefore, in view of different packaging forms and different interconnection structures, three different devices, namely, CCGA (Ceramic Column Grid Array), CBGA (Ceramic Ball Grid Array) and PBGA (Ceramic Ball Grid Array), are used for temperature cycling. Through comparative analysis, the effects of packaging forms and interconnection structures on the reliability of large-scale packaging in low-temperature thermal fatigue environment were studied, and life prediction was carried out. According to the analysis, under the same temperature cycling condition, the form of plastic packaging is better than that of ceramic packaging, and the thermal fatigue resistance of the solder column interconnection structure is stronger than that of the solder ball interconnection structure.

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Decapsulation Method for 3D Stacked-die Packaged Devices

Decapsulation Method for 3D Stacked-die Packaged Devices

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International Symposium on Physical & Failure Analysis of Integrated Circuits

作者： Xiaoling Lin Chaohui Liang Science and Technology Laboratory on Reliability Physics and Application of Electronic Component The fifth institute of MIIT P.R. China Guangzhou China Reliability Analysis Center The fifth institute of MIIT P.R. China Guangzhou China Reliability Analysis Center The fifth institute of MIIT P.R.China Guangzhou China

ISBN: (数字)9781728161693

ISBN: (纸本)9781728161709

3-dimensional (3D) stacked-die package is one of the important package styles for MEMS inertial devices. Its unique packaging brings new challenges for its decapsulation method. In this paper, a new decapsulation method for 3D stacked-die packaged MEMS inertial devices is introduced with method's steps, technical flow and application. This decapsulation method is the combination of laser-decap and multi-steps chemical etching. It reveals the stacked-dies layer by layer and makes the possibility to analyze the structures in the MEMS inertial devices, such as accelerometer, gyroscope, ASIC, etc. It provides good technical support for inner-inspection of 3D stacked-die packaged MEMS inertial devices.

关键词： Micromechanical devices Plastics Etching Accelerometers Chemicals Gyroscopes Morphology

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Effect of random vibration load on flat cover and T-shaped cover in CCGA package

Effect of random vibration load on flat cover and T-shaped c...

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International Conference on (ICEPT) electronic Packaging technology

作者： Zezheng Li Bin Zhou Si Chen Tong An Fei Qin Beijing University of Technology Beijing China Science and technology on reliability physics and application of electronic component laboratory Guangzhou China

ISBN: (数字)9781728150642

ISBN: (纸本)9781728150659

This paper uses the finite element method to establish a three-dimensional finite element model of a ceramic column grid array (CCGA) package flat cover and T-cover structure. The stress distribution of CCGA package sealing cover under three random vibration loads (acceleration root mean square values of 53.5 m/s 2, 92.6 m/s 2 , 119.5 m/s 2 ) is analyzed, and the flat cover and T-shaped cover are respectively determined. The dangerous position of the plate structure, the initial position of the crack and the crack propagation. The results show that the flat cover plate is prone to cracks at the four corners of the interface between sealing cover and solder, and the T-shaped cover plate is liable to cracks in the middle of the edge of the interface between sealing cover and solder.

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Degradation of current–voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors

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Chinese physics B 2018年第6期27卷 524-530页

作者： Li Wang Yuan Liu Kui-Wei Geng Ya-Yi Chen Yun-Fei En School of Electronic and Information Engineering South China University of TechnologyGuangzhou 510640China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREIGuangzhou 510610China Key Laboratory of Silicon Device Technology Chinese Academy of SciencesBeijing 100029China

The instabilities of indium–zinc oxide thin film transistors under bias and/or illumination stress are studied in this paper. Firstly, illumination experiments are performed, which indicates the variations of current–voltage characteristics and electrical parameters（such as threshold voltage and sub-threshold swing） are dominated by the stress-induced ionized oxygen vacancies and acceptor-like states. The dependence of degradation on light wavelength is also investigated. More negative shift of threshold voltage and greater sub-threshold swing are observed with the decrease of light ***, a negative bias illumination stress experiment is carried out. The degradation of the device is aggravated due to the decrease of recombination effects between ionized oxygen vacancies and free carriers. Moreover, the contributions of ionized oxygen vacancies and acceptor-like states are separated by using the mid-gap method. In addition, ionized oxygen vacancies are partially recombined at room temperature and fully recombined at high temperature. Finally, low-frequency noise is measured before and after negative bias illumination stress. Experimental results show few variations of the oxide trapped charges are generated during stress, which is consistent with the proposed mechanism.

关键词： indium-zinc oxide thin film transistor illumination low frequency noise

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Electromagnetic Pattem Extraction and Classification of Integrated Circuit under Different Operation State

Electromagnetic Pattem Extraction and Classification of Inte...

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Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)

作者： Rongquan Chen Weiheng Shao Wenxiao Fang Meizhen Xiao Lei Wang Xinxin Tian Zhiyuan He Hengzhou Liu Xuecheng Xu Yulong Wang Hang Zhang Zeyi Li Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute (CEPREI) Guangzhou China

Extracting electromagnetic patterns by near field scanning can provide concrete information about a device under test (DUT), which benefits a lot when locating EMI sources. In this paper, we extracted the electromagnetic pattern of DUT under different operation state and classify the pattern with a machine learning algorithm for simplifying post-process procedure and better EMC engineering. The result showed different operation state lead to different electromagnetic emission.

关键词： Electromagnetic compatibility Electromagnetics Field programmable gate arrays Integrated circuit modeling Electromagnetic interference Standards

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Spatial resolution measurement of near-field probe by using two adjacent microstrip lines

Spatial resolution measurement of near-field probe by using ...

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Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)

作者： Meizhen Xiao Weiheng Shao Wenxiao Fang Rongquan Chen Xinxin Tian Zeyi Li Lei Wang Hengzhou Liu Yulong Wang Xuecheng Xu Zhiyuan He Heng Zhang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute (CEPRI) Guangzhou China

In this paper, an experiment to distinguish the spatial resolution of different magnetic probes is executed. Different from traditional measuring method of spatial resolution by using one microstrip line, we measured the spatial resolution by changing two adjacent microstrip lines with space distances from 3 mm to 0.6 mm. By analyzing the test results, we can distinguish the spatial resolution of different probes.

关键词： Probes Microstrip Spatial resolution Magnetic field measurement Magnetic fields Electromagnetic compatibility Electromagnetic interference

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Investigating Neutron-Induced Single Event Transient Characteristics by TCAD Simulations in 65 nm technology and Below

Investigating Neutron-Induced Single Event Transient Charact...

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International Conference on Radiation Effects of electronic Devices (ICREED)

作者： Chao Peng Zhifeng Lei Zhangang Zhang Yunfei En Yun Huang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou 510610 China

ISBN: (数字)9781728173184

ISBN: (纸本)9781728173191

The neutron-induced secondary ions can cause single event effects through direct ionization, while the LET values of the secondary ions are quite lower than heavy ions in space. Monte Carlo simulation results show that although the maximum LET of secondary ions produced by different energy neutrons incident into the circuit can reach 25.6 MeV-cm 2 /mg, 98% of the secondary ions have LET values below 16 MeV-cm 2 /mg. This may lead to different charge collection mechanisms and single event transient (SET) characteristics for neutron. In this paper, the charge collection mechanisms of neutron secondary ions in a single 65 nm planar bulk transistor are studied through 3D TCAD simulations. The neutron-induced SET characteristics in planar bulk transistor, UTBB FDSOI and bulk/SOI FinFET are also compared. Based on the simulation results, UTBB FDSOI shows the best single event effect immunity compared with planar bulk transistor, bulk FinFET and SOI FinFET under the same technology node.

关键词： FinFETs Silicon-on-insulator Substrates Ionization Neutrons

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Study on Intermittent Penetration Degradation Life Model of Metal-Glass Sealing Structure

Study on Intermittent Penetration Degradation Life Model of ...

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International Conference on (ICEPT) electronic Packaging technology

作者： Xing Fu Shaohua Yang Jun Luo Si Chen Yun Huang Bin Zhou Science and technology on reliability physics and application of electronic component laboratory Guangzhou China Science and Technology on Analog Integrated Circuit Laboratory Chongqing China

ISBN: (数字)9781728150642

ISBN: (纸本)9781728150659

Moisture is a major environmental factor that causes airtight failure under temperature cycling conditions. Increasing ambient moisture will accelerate metal-glass airtight intermittent penetration degradation. Glass insulators produce fine cracks due to reduced strength under temperature cycling *** on the molecular flow model, the formula for calculating the relationship between leak rate and crack depth and width is obtained. It is concluded that the leak rate is proportional to the cube of the crack width and inversely proportional to the micropore depth. The theoretical calculation results are less than 10% of the measured leak rate *** moisture content converted from the liquid water of three monolayers was calculated, and the airtight HIC metal-glass sealing intermittent degradation life model with a certain leak rate was obtained.

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Vibration and Thermal Fatigue reliability of CCGA components

Vibration and Thermal Fatigue Reliability of CCGA Components

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International Conference on (ICEPT) electronic Packaging technology

作者： Tao Lu Yabin Zou Xiao He Hongqin Wang Hui Xiao Bin Zhou Department of Reliability Research and Analysis Center Ceprei Laboratory Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (数字)9781728150642

ISBN: (纸本)9781728150659

With the development of technology, the requirements for high density and high reliability of electronic components are constantly increasing, and more challenges are placed on packaging technology. CCGA (ceramic column grid array) is developed on the basis of CBGA. It replaces the solder ball with a slender solder column. With the good creep resistance of the solder column, it adapts to thermal stress mismatch for the difference in thermal expansion coefficient between the PCB and the ceramic substrate. Compared with CBGA, CCGA is more suitable for more I/O and large package and assembly, but compared to other package types, CCGA package faces many challenges such as cost and mechanical reliability. In this paper, the finite element simulation technology is used to simulate the vibration and thermal reliability of CCGA solder column with different column types and different materials. The finite element model established by simulation includes key structures such as heat sink, chip, ceramic substrate, solder column, PCB, etc.

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