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第十九届国际电子封装技术会议(ICEPT 2018)

作者： Yuan Chen Peng Zhang Xiao ling Lin Wei Su Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The Analysis and Test Center South China University of Technology Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The

With the development of 3D integrated packaging,Through Silicon Via(TSV)has become one of the most promising technologies in 3D stacking *** the important physical connection and electrical connection between the chip and chip,TSV's reliability is undoubtedly the key to determine the reliability of TSV three-dimensional integrated *** three-dimensional integrated device will gradually be failed by the thermal mechanical stress,electrical stress and other stress,which will greatly affect the TSV three-dimensional device *** defects and analyzing the failure mechanism are very important for the optimization and improvement of the design,production and use of TSV 3D integrated *** this paper,the reliability of through-silicon via(TSV)interposer under thermal cycling test was *** of crack along the Top RDL interface and Cu-TSV deformation were identified as two main failure modes after 1000 thermal *** analysis was performed on TSV interposer to understand how the stress distribution in the structure affects the formation and growth of *** results show a good correlation between the positions of the damage observed and the simulation of stress concentration area.

关键词： Through silicon vias Failure analysis finite element analysis 3D integrated circuits

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Influence of Total Ionizing Dose Irradiation on Low-Frequency Noise Responses in Partially Depleted SOI nMOSFETs

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Chinese physics Letters 2017年第11期34卷 106-109页

作者：彭超恩云飞雷志锋陈义强刘远李斌 Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute School of Electronic and Information Engineering South China University of Technology

Total ionizing dose effect induced low frequency degradations in 130nm partially depleted silicon-on-insulator （SOI） technology are studied by ^60Co γ -ray irradiation. The experimental results show that the flicker noise at the front gate is not affected by the radiation since the radiation induced trapped charge in the thin gate oxide can be ignored. However, both the Lorenz spectrum noise, which is related to the linear kink effect （LKE） at the front gate, and the flicker noise at the back gate are sensitive to radiation. The radiation induced trapped charge in shallow trench isolation and the buried oxide can deplete the nearby body region and can activate the traps which reside in the depletion region. These traps act as a GR center and accelerate the consumption of the accumulated holes in the floating body. It results in the attenuation of the LKE and the increase of the Lorenz spectrum noise. Simultaneously, the radiation induced trapped charge in the buried oxide can directly lead to an enhanced flicker noise at the back gate. The trapped charge density in the buried oxide is extracted to increase from 2.21×10^18 eV^-1 cm^-3 to 3.59×10^18？eV^-1 cm^-3 after irradiation.

关键词： SOI MOSFET Influence of Total Ionizing Dose Irradiation on Low-Frequency Noise Responses in Partially Depleted SOI nMOSFETs

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Total Ionizing Dose Radiation Effects in the P-Type Polycrystalline Silicon Thin Film Transistors

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Chinese physics Letters 2017年第1期34卷 133-136页

作者：刘远刘凯陈荣盛刘玉荣恩云飞李斌方文啸 Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Produce Reliability and Environmental Testing Research Institute School of Electronic and Information Engineering South China University of Technology

The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises (LFN) are measured before and after radiation. The experimental results show that threshold voltage and hole-field-effect mobility decrease, while sub-threshold swing and low-frequency noise increase with the increase of the total dose. The contributions of radiation induced interface states and oxide trapped charges to the shift of threshold voltage are also estimated. Furthermore, spatial distributions of oxide trapped charges before and after radiation are extracted based on the LFN measurements.

关键词： Total Ionizing Dose Radiation Effects in the P-Type Polycrystalline Silicon Thin Film Transistors SiO

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An electrical-coupling-suppressing MEMS gyroscope with feed-forward coupling compensation and scalable fuzzy control

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science China(Information sciences) 2017年第4期60卷 180-190页

作者： Chunhua HE Jimeng ZHANG Qiancheng ZHAO Qinwen HUANG Zhenchuan YANG Dacheng ZHANG Guizhen YAN National Key Laboratory of Science and Technology on Micro/Nano Fabrication Institute of Microelectronics Science and Technology on Reliability Physics and Application of Electronic Component Laboratory No.5 Electronics Research Institute of the Ministry of Industry and Information Technology

This paper proposes a novel electrical coupling suppressing and drive closed loop control method for a MEMS gyroscope with feed-forward coupling compensation(FCC) and scalable fuzzy control. Theoretical analysis of the novel method is described in detail, and it is very simple to realize. Experimental results demonstrate that the electrical anti-resonant peaks located at the amplitude-frequency and phase-frequency responses are both eliminated by FCC control, and the height of the amplitude resonant peak increases more than 24 d B over 1800 Hz span. In addition, the overshoot of the transient response with scalable fuzzy control is smaller than 5%, and the settling time is less than 15 ms. The stabilities of the resonant amplitude and phase of the drive-mode velocity with scalable fuzzy control are about 15 ppm and 11 ppm, respectively. The scale factor of the gyroscope is measured to be 33.98 m V/deg/s with nonlinearity about 0.08%. Furthermore, the bias instability of the gyroscope with wavelet analysis is improved to be about 6.3 deg/h from 25.2 deg/h of the gyroscope without wavelet analysis.

关键词： MEMS gyroscope electrical coupling suppressing anti-resonance feed-forward coupling compen sation scalable fuzzy control

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Research on Vibration reliability of DIP Surface-Mounted Solder Joint after Pin Bend

Research on Vibration Reliability of DIP Surface-Mounted Sol...

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第十九届国际电子封装技术会议(ICEPT 2018)

作者： Tao Lu Xiao He Hui Xiao Yabin Zou Baojun Qiu Bin Zhou Department of Reliability Research and Analysis Center Ceprei Laboratory Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Gua

In order to facilitate the entire board reflow process,the pin of a DIP(Dual In-line Package)component is bent into a gull-wing type ***,after a short period of service,the failure of the Dual Inline Package surface-mounted solder joints of this type of product has *** order to analyze the causes of failures,the DIP surface-mount solder joints were synthesized by means of metallographic sectioning,SEM(scanning electron microscope)analysis and numerical simulation *** metallographic sectioning and SEM&EDS analysis,it is found that due to the possible poor coplanarity of the bent DIP pin array,some of the pins are deficient in solder under the reflow soldering,resulting in a solder joint with the effective connection area too small,so that it is cracked by environmental vibration stress during the service *** main objective of the work is to evaluate the long-term reliability of DIP surface mounted solder joints,this study mainly used reliability simulation techniques to perform random vibration simulations on module components,and conducted stress analysis on the vibration response of solder joints to verify the location of solder joint cracking under the vibration *** vibration responses of bent gull-wing solder joints and normal plug-in type solder joints were compared and analyzed through simulation *** vibration reliability of plug-in solder joints was found to be significantly higher than that of gull-wing solder joints after design *** a result,for long-term reliability considerations,this design change is not recommended.

关键词： dual in-line package surface mount solder joint fatigue failure reliability simulation

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A novel robust design method for the sense mode of a MEMS vibratory gyroscope based on fuzzy reliability and Taguchi design

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science China(Technological sciences) 2017年第2期60卷 317-324页

作者： HE ChunHua ZHAO QianCheng HUANG QinWen LIN LongTao YANG ZhenChuan ZHANG DaCheng YAN GuiZhen National Key Laboratory of Science and Technology on Micro/Nano Fabrication Institute of MicroelectronicsPeking University Science and Technology on Reliability Physics and Application of Electronic Component Laboratory No.5 Electronics Research Institute of the Ministry of Industry and Information Technology

This paper proposes a novel robust design method for the sense mode of a MEMS vibratory gyroscope based on fuzzy reliability and Taguchi design. The principles of fuzzy reliability and Taguchi design are both introduced and described in detail. Experimental results demonstrate that the signal to noise ratio of the robust design scheme is better than those of the other experimental *** the full temperature range from -40 to 80°C, the temperature sensitivities of phase margin, gain margin, sensitivity margin,the maximum amplitude of open loop system, bandwidth of closed loop system, and the performance function of the robust design system are all smaller than those of the original design system. Meanwhile, the temperature sensitivity of the bandwidth of the robust design system is improved to 126 from 1075 ppm/°C. Moreover, the bias drift over the full temperature range of the robust design system is improved to 61°/h from 179°/h.

关键词： MEMS gyroscope fuzzy reliability Taguchi design force rebalance control mode-matching

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Study on Lifetime Model of Power Devices Based on Junction Temperature

Study on Lifetime Model of Power Devices Based on Junction T...

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International Conference on Quality, reliability, Risk, Maintenance, and Safety Engineering (ICQR2MSE)

作者： Yuan Chen Peng Zhang Bo Hou Hong-Zhong Huang School of Mechanical and Electrical Engineering University of Electronic Science and Technology of China Chengdu Sichuan P.R. China Analysis and Test Center South China University of Technology Guangzhou Guangdong P.R. China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The Fifth Electronics Research Institute of Ministry of Industry and Information Technology Guangzhou Guangdong P.R. China

ISBN: (数字)9781728114279

ISBN: (纸本)9781728114286

Power devices are widely used in power supply or converter systems in aerospace, rail transit, smart grid, new energy vehicles, industrial electronics and other fields. The reliability of power devices plays an important role in the smooth operation of power electronic system. Junction temperature is an important parameter that determines the lifetime of power devices, and its fluctuation is directly related to the aging and failure of bonding wire and solder layer. In this paper, the NPN high-power switch transistor is tested for power cycling, and the changes of electrical parameters and thermal resistance are compared under different junction temperature variations, and Coffin-Mason model is used to predict its lifetime. The degradation trend of power devices is described by using both life prediction model and sensitive parameter change innovatively. The results show that the prediction lifetime by Coffin-Mason model is consistent with the degradation trend of sensitive parameters.

关键词： Junctions Mathematical model Predictive models Thermal resistance Stress reliability

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The study of natural exposure testing for LED lighting system 18

The study of natural exposure testing for LED lighting syste...

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18th International Conference on electronic Packaging technology, ICEPT 2017

作者： Bin, Yao Huawei, Xu Zhenwei, Zhou Lu, Guoguang Lai, Canxiong Ruguan, Li Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREi Guangzhou China

ISBN: (纸本)9781538629727

Light emitting diode (LED) lighting is the most promising energy saving solution for future lighting application. For some LED applications, such as the building or bridge lighting application, the corresponding LED lighting system will be expected to be functional as long as the objects stand. Therefore it is necessary to obtain the degradation regularity of LED lighting systems and predict when failure is likely to occur. In this paper, the LED lighting system is defined as LED lamp (composed of a fixed number of LED strings and LED electrical driver). In order to research the degradation regularity of LED lighting systems in the field, natural exposure tests for LED lamps at Xisha and Guangzhou were performed. The key performance parameters including illuminance and color temperature were measured intermittently. Based on the parameter measurement, the performance degradation regularity of LED lamps at different locations was contrastively analyzed. The difference of temperature and humidity between Xisha and Guangzhou was also investigated to reveal the reason of diversity of performance degradation regularity at different location. Finally, data driven approach was used to assess the reliability and predict the remaining useful lifetime of LED lighting systems based the test data during the sustaining natural exposure test. The early warning of degradation and failure of LED lamps can be given according to the RUL prediction. © 2017 IEEE.

关键词： Light emitting diodes

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Wave Soldering Structure Optimization Simulation of Multi-layer Ceramic Capacitors

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Journal of physics: Conference Series 2020年第3期1650卷

作者： Wei Su Wenhao Luo Junkui Li Renhuai Liu MOE Key lab of Disaster Forecast and Control in Engineering Guangzhou 510632 China. Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou 510610 China. School of Mechanics and Construction Engineering Jinan University Guangzhou 510632 China

In this paper, the thermal analysis and structural analysis of MLCC are carried out by using the commercial finite element software ANSYS. By comparing the thermal-mechanical analysis results of the structural optimization models of different schemes, the optimal optimization scheme is found. The model calculated the time required for MLCC to reach temperature stability considering thermal convection and heat conduction, and obtained the thermal deformation and thermal stress distribution of MLCC element. Based on the analysis results of MLCC original model, the thermal analysis under different wave soldering temperatures was carried out. Based on the simulated transient results, the structure and materials of MLCC key components were optimized. The results provide a basis for the optimal design of MLCC.

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Effect of Cryogenic Storage on reliability of the BGA Interconnect Solder Joint

Effect of Cryogenic Storage on Reliability of the BGA Interc...

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2018年先进电子材料、计算机与材料工程国际学术会议（AEMCME 2018）

作者： Xing Fu Yunfei En Bin Ma Ruohe Yao Bin Zhou Yun Huang School of Electronics and Information South China University of Technology Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Products Reliability and Environmental Testing Institute

The inhibitory effect of cryogenic factor on the migration rate of Cu atoms resulted in the formation of granular Cu6 Sn5. The cryogenic temperature greatly reduced the active ability of atoms and vacancies leading to the even dispersion of lead atoms. The mismatch in the thermal expansion coefficient between the IMCs and the solder matrix promoted the propagation of tiny cracks. The thicker IMCs induced larger residual stresses and serious mismatch, resulting in the generation of microcracks and peeling.

关键词： Effect of Cryogenic Storage on reliability of the BGA Interconnect Solder Joint BGA

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