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Ultimate Strength Analysis of Local Thinning Tee Pipe Considering Plastic Strengthening Effect

Journal of physics: Conference Series 2020年第2期1650卷

作者： Wei Su Wenhao Luo Xianshan Dong Renhuai Liu MOE Key lab of Disaster Forecast and Control in Engineering Guangzhou 510632 China. Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou 510610 China. School of Mechanics and Construction Engineering Jinan University Guangzhou 510632 China

In this paper, the locally thinned three-way structure under internal pressure is analyzed based on the theory of plastic strengthening effect and limit analysis. A finite element model is presented through ANSYS commercial software to simulate the mechanical properties of orthogonal and oblique three-way structures. This paper systematically analyses how the shape and size of the thinning effect the plastic limit load of the pipe and what is the typical failure mode of plastic failure. Some valuable conclusions are drawn, which provide a useful reference for the design and production of the tee pipe.

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Ultimate Strength Analysis of Three-Way Pipe Considering Plastic Reinforcement Effect

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Journal of physics: Conference Series 2020年第2期1650卷

Considering the plastic reinforcement effect in materials, the plastic limit load of the three-way structure is analyzed. ANSYS commercial finite element software is used for numerical simulation. According to the results, the paper discusses the influence of the plastic reinforcement effect on the pipe's plastic ultimate load and failure mode. And the structure is further analyzed to verify the theory and design ideas in actual engineering. For improving the design and safety assessment of the three-way structure, the results provide a theoretical basis and a numerical reference, and the finite element method is economical than the experimental method. At last, it satisfies the accuracy requirements of engineering.

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Scaling Behaviour of State-to-State Coupling During Hole Trapping at Si/SiO2

Scaling Behaviour of State-to-State Coupling During Hole Tra...

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Annual International Symposium on reliability physics

作者： Xiaolei Ma Xiangwei Jiang Jiezhi Chen Liwei Wang Yunfei En School of Information Science and Engineering Shandong University Qingdao P. R. China State Key Laboratory of Superlattices and Microstructures Chinese Academy of Sciences Beijing P. R. China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangdong P. R. China

The decay length scaling behavior of state-to-state coupling between silicon valence band (VBM si ) and oxygen vacancy defect (E defect ) in Si/SiO 2 interface is thoroughly investigated by density-functional theory. The detailed coupling process is revealed, and the scaling rate with interface-defect distance is obtained. Results show that the coupling constants (Vc) decay with the defect distance is not so fast as the WKB approximation predicts, and the reason lies in the fact that the tunneling picture overestimates the localization of the defect states.

关键词： Couplings reliability Tunneling Discrete Fourier transforms Silicon Negative bias temperature instability

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Distinguishing Interfacial Hole Traps in (110), (100) High-K Gate Stack

Distinguishing Interfacial Hole Traps in (110), (100) High-K...

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Annual International Symposium on reliability physics

作者： Yueyang Liu Xiangwei Jiang Liwei Wang Yunfei En Runsheng Wang State Key Laboratory of Superlattices and Microstructures Chinese Academy of Sciences Beijing P. R. China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangdong P. R. China Institute of Microelectronics Peking University Beijing P. R. China

To deeply understand the charge trapping process in high-k gate stacks, we theoretically investigate the hole trapping characteristics of interfacial oxygen vacancies in (110) and (100) Si/SiO 2 /HfO 2 stacks. Si/SiO 2 and SiO 2 /HfO 2 interfacial defects are studied, and the hole trapping rate of each defect is calculated through ab initio simulation combining density-functional theory and Marcus theory. Among the possible hole traps considered in this work, it is suggested that the oxygen vacancies at SiO 2 /HfO 2 interface are the dominant under strong negative gate bias stress, and those at Si/SiO 2 interface can be effective traps only when hydrogen atom (H) or hydroxyl (OH) is induced at the vacancy. Moreover, the most dominant hole trap among the considered traps in the (110) structure locates at the Si/SiO 2 interface, while that in the (100) structure locates at the SiO 2 /HfO 2 interface.

关键词： Logic gates High-k dielectric materials Couplings Silicon Passivation Electric fields Hafnium compounds

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Real-Time Soft Errors Testing System for Large-area QDR Ⅱ+ SRAM Arrays in the Tibetan Plateau

Real-Time Soft Errors Testing System for Large-area QDR Ⅱ+ ...

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中国电子学会可靠性分会第二十届可靠性物理年会

作者： Teng Tong Zhangang Zhang Cunfeng Wei Zhifeng Lei Mohan Li Daowu Li Peilin Wang Tingting Hu Baotong Feng Xiaohui Li Institute of High Energy Physics Chinese Academy of Sciences Beijing 100049 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Ch

A real-time testing system comprised of a large-area array of 72 QDR Ⅱ+ SRAMs (over 10-Gbit,manufactured with 65 nm CMOS technology) was assembled on the Tibetan Plateau at an altitude of 4,300 *** complex and expensive system monitored a large number of devices in parallel for 153 days uninterruptedly under harsh natural radiation ***-one soft errors were observed over the period of validating the test system and the calculated SER value is 2,356 FIT/Mb.

关键词： Real-time testing soft errors large-area array QDR Ⅱ+SRAMs high altitude

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A VSWR measurement system for high power devices in working mode

A VSWR measurement system for high power devices in working ...

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International Conference on Vacuum electronics

作者： Tieyang Wang Fangfang Song Yunfei En Feng Zou Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou 510610 China Institute of Electronics Chinese Academy of Sciences Beijing CN

This paper presents a novel VSWR measurement system for high power electronic vacuum device such as traveling wave tube in working mode. The measurement principles of this VSWR measurement system have been presents. T... 详细信息

ISBN: (纸本)9781538604564

关键词： Frequency measurement Power measurement Receivers Directional couplers Power electronics Attenuation measurement reliability

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Thermal Analysis on the Degradation of GaN HEMTs

Thermal Analysis on the Degradation of GaN HEMTs

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第十九届国际电子封装技术会议(ICEPT 2018)

作者： Bin Zhou Ruguan Li Zhiyuan He Yun Huang Si Chen Xing Fu Science and technology on reliability physics and application of electronic component laboratory CEPREI Guangzhou China

High temperature operation(HTO)experiments were performed on industrial GaN HEMTs *** degradation failure modes of DC parameters such as transconductance reduction,threshold voltage shift,and gate leakage current increase were *** vertical failure localization and analysis of the devices were carried out by electrical *** results show that the increase of the degradation of the die attach layer is the main reason for the increase of the junction temperature and thermal resistance of the ***,the results are analyzed by three-dimensional X-ray imaging confirming the degradation of the die attach *** voids in the die attach layer expanded during the high temperature operation stress experiments,led to a worse heat dissipation performance,which resulting in increased junction temperature,and further accelerate the performance degradation of the devices.

关键词： GaN reliability thermal resistance junction temperature

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An Automatic Recognition Method for PCB Visual Defects

An Automatic Recognition Method for PCB Visual Defects

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International Conference on Sensing, Diagnostics, Prognostics, and Control (SDPC)

作者： Zhongqiu Zhang Xiaodong Wang Shan Liu Li Sun Liye Chen Yangming Guo Ming de College Northwestern Polytechnical University Xi'an China Shaanxi Networks Innovation Institute NorthWestern Polytechnical University Xi'an China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9781538660584;9781538660577

Aiming at the problems of low recognition rate and poor efficiency in traditional manual visual inspection of PCB apparent defects, an effective automatic recognition approach is proposed in this paper. The approach firstly obtains the apparent defect region image based on template matching defect detection algorithm. And then, the features of the apparent defect region image are extracted by combining the gray histogram features and the geometric features. Finally, this paper uses the optimized Support Vector Machine (SVM) classifier for automatic recognition and classification. The simulation results show that the method proposed for PCB's apparent defect in this paper can reach more than 96% recognition rate, which is an effective and feasible automatic recognition method.

关键词： Feature extraction Histograms Support vector machines Training Capacitors Entropy Image segmentation

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The study of natural exposure testing for LED lighting system

The study of natural exposure testing for LED lighting syste...

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International Conference on (ICEPT) electronic Packaging technology

作者： Yao Bin Xu Huawei Zhenwei Zhou Guoguang Lu Canxiong Lai Ruguan Li Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI China

Light emitting diode (LED) lighting is the most promising energy saving solution for future lighting application. For some LED applications, such as the building or bridge lighting application, the corresponding LED lighting system will be expected to be functional as long as the objects stand. Therefore it is necessary to obtain the degradation regularity of LED lighting systems and predict when failure is likely to occur. In this paper, the LED lighting system is defined as LED lamp (composed of a fixed number of LED strings and LED electrical driver). In order to research the degradation regularity of LED lighting systems in the field, natural exposure tests for LED lamps at Xisha and Guangzhou were performed. The key performance parameters including illuminance and color temperature were measured intermittently. Based on the parameter measurement, the performance degradation regularity of LED lamps at different locations was contrastively analyzed. The difference of temperature and humidity between Xisha and Guangzhou was also investigated to reveal the reason of diversity of performance degradation regularity at different location. Finally, data driven approach was used to assess the reliability and predict the remaining useful lifetime of LED lighting systems based the test data during the sustaining natural exposure test. The early warning of degradation and failure of LED lamps can be given according to the RUL prediction.

关键词： Light emitting diodes Feature extraction Electric variables measurement Data mining Prediction algorithms Mathematical model electronics packaging

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Vibrational characteristics evaluation on mid-infrared solid state laser 18

Vibrational characteristics evaluation on mid-infrared solid...

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18th International Conference on electronic Packaging technology, ICEPT 2017

作者： Guo-Guang, Lu Long, Han Lei, Wei Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Fifth Research Institute of MIIT CEPREi Guang Zhou China Key Laboratory of Solid-State Laser Technology North China Research Institute of Electro-Optics Bei Jing China

ISBN: (纸本)9781538629727

The vibrational characteristics of the mid-infrared solid-state laser is an important factor which affects the laser output characteristic and the system integrated performance. Starting with the dynamic equilibrium equation, The simulation models of the vibrating effect of the solid-state laser and the key components are established, and the natural characteristics and dynamic response of the solid-state laser and the key components are obtained, the simulation results are in good agreement with the experimental results that obtained by the laser Doppler velocimeter. The analysis show that whether for vehicle or airborne mounted mid-infrared solid-state laser, the larger stress strain of the lens components is mainly concentrated in the front and rear facet mirrors, beam expander and beam expander input mirrors of 2μm solid-state lasers, and the maximum total mechanical strain and equivalent stress are present at the edge of the input mirror of the beam expander. © 2017 IEEE.

关键词： Dynamic response

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