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17th International Conference on electronic Packaging technology, ICEPT 2016

作者： Tao, Lu Hui, Xiao Junhua, Zhu Hongqin, Wang Reliability Research and Analysis Center China Ceprei Laboratory Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9781509013968

Since the initial design layout of hybrid integrated DC/DC (direct current) power converter modules on the printed circuit board exists some disadvantages, the vibration reliability problems of DC/DC modules assembly, such as casing wear, glass insulator, are arisen during the service condition. For in-depth study of the above circumstances, this research conducted random vibration numerical simulations for the DC/DC modules assembly, and under the permission of assembly process, the article carried out a structural optimization design. The results show that it was necessary for the random vibration analysis. By observing the deformation of assembly, the possibility of a collision between the converter modules is verified. The structural optimization of the assembly proves to be successful. © 2016 IEEE.

关键词： Structural optimization

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Interfacial damage extraction method for SiC power MOSFETs based on C-V characteristics

Interfacial damage extraction method for SiC power MOSFETs b...

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International Symposium on Power Semiconductor Devices and Ics (ISPSD)

作者： Jiaxing Wei Siyang Liu Ran Ye Xin Chen Haiyang Song Weifeng Sun Wei Su Shulang Ma Yuwei Liu Feng Lin Bo Hou National ASIC System Engineering Research Center Southeast University Nanjing China CSMC Technologies Corporation Wuxi China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory Guangzhou China

In this work, a useful interfacial damage extraction method for SiC power MOSFETs based on the C-V characteristics is proposed. According to the five different interface situations of the channel region and the JFET region, the Cg-Vg curve can be divided into five relatively independent parts. It demonstrates that the charges injected into the oxide of channel region will lead to an opposite shift in part 11 while the charges injected into the JFET region will result in the shifts in part 111 and IV. Through this way, the location of the charges injected in to the SiO 2 /SiC interface can be distinguished. The correctness of the method is proved by a UIS-stressed SiC power MOSFET. Moreover, the density of the charges injected into the interface oxide can be calculated by the amplitude of the shift in the Cg-Vg characteristic.

关键词： Radio frequency Stress

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Monte Carlo predictions of proton SEE cross-sections from heavy ion test data

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Chinese physics C 2016年第6期40卷 43-48页

作者：习凯耿超张战刚侯明东孙友梅罗捷刘天奇王斌叶兵殷亚楠刘杰 Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China University of Chinese Academy of Sciences Beijing 100049China Academy of Shenzhen State Microelectronics Co. Ltd.Shenzhen 518057China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory ChinaElectronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510610China

The limits of previous methods prompt us to design a new approach （named PRESTACE） to predict proton single event effect （SEE） cross-sections using heavy-ion test data. To more realistically simulate the SEE mechanisms, we adopt Geant4 and a location-dependent strategy to describe the physics processes and the sensitivity of the device. Cross-sections predicted by PRESTAGE for over twenty devices are compared with the measured data. Evidence shows that PRESTACE can calculate not only single event upsets induced by indirect proton ionization, but also direct ionization effects and single event latch-ups. Most of the PRESTAGE calculated results agree with the experimental data within a factor of 2 3.

关键词： single event effects Geant4 protons heavy ions

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Thermal-Structural Coupling Analysis of PCBA System

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IOP Conference Series: Materials science and Engineering 2018年第2期452卷

作者： Wei Su Junhua Zhu Renhuai Liu Zhiyuan He Scienceand Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China MOE Key Lab of Disaster Forecast and Control in Engineering Jinan University Guangzhou China Department of Mechanics and Civil Engineering Jinan University Guangzhou China

In this paper, the thermal and structural analysis of the PCBA system is provided by using the 3-D ANSYS package. The results of thermal and structural analysis for complex and simple model are compared. The paper also describes the deformation analysis of the PCBA system components, and the weak components sensitive to thermal stress are determined though thermal-structual analysis. The results of thermal analysis are helpful to the optimizing overall arrangement design of PCBA system.

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32×32 very long wave infrared HgCdTe FPAs

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Hongwai Yu Jiguang Gongcheng = Infrared and Laser Engineering 2017年第5期 67页

作者： Chen, Honglei Wei, Yanfeng Ding, Ruijun Hao, Lichao Huang, Aibo Xie, Xiaohui Li, Hui Lai, Canxiong Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component The Fifth Research Institute of Ministry of Industry and Information Technology

Very long wave infrared（VLWIR）band is widely used for the remote atmosphere sounding applications,particularly for humidity,CO2 levels,cloud structure and temperature distribution.A 32×32VLWIR HgCdTe focal plane array（FPA）was *** photosensitive component was fabricated by B+ion implanting As-doped p-type material of liquid phase epitaxial growth on ZnCdTe *** readout integrated circuit（ROIC）used a buffered direct injection（BDI）structure with an improved background *** VLWIR focal plane array（FPA）was achieved by combining the HgCdTe detector with ROIC in terms of indium bump bonds,the cutoff wavelength of which was over 14μ*** pixel occupied an area of 60μm×60μ*** could be operated at the temperatures of 50 *** test results show that the peak detectivity and blackbody responsivity of PFAs are 2.57×1010cmHz1/2/W and1.35×107V/W,*** nonuniformity of responsivity is about 45%,and dead pixels ratio is less than 12%.

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Tensile mechanical properties tests of non-standard component in high temperature

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AIP Conference Proceedings 2017年第1期1839卷

作者： Wei Su Renhuai Liu Fangfang Song Junhua Zhu Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou 510610 China

This paper makes research on tensile mechanical properties tests of heater component in electron gun. Tests are studied to get tensile property of heater component at the room and elevated temperature. Though improving test clamping appliance and experimental methods, discussing tensile fracture analysis, rupture mechanism is obtained by in situ observation using scanning electron microscope (SEM). To facilitate engineering application, materials suggestion is given at the end of the paper.

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Sensitivity analysis of pull-in voltage for RF MEMS switch based on modified couple stress theory

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Applied Mathematics and Mechanics(English Edition) 2015年第12期36卷 1555-1568页

作者： Junhua ZHU Renhuai LIU Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Institute of Applied Mechanics Jinan University

An approximate analytical model for calculating the pull-in voltage of a stepped cantilever-type radio frequency （RF） micro electro-mechanical system （MEMS） switch is developed based on the Euler-Bernoulli beam and a modified couple stress theory, and is validated by comparison with the finite element results. The sensitivity functions of the pull-in voltage to the designed parameters are derived based on the proposed model. The sensitivity investigation shows that the pull-in voltage sensitivities increase/decrease nonlinearly with the increases in the designed parameters. For the stepped cantilever beam, there exists a nonzero optimal dimensionless length ratio, where the pull-in voltage is insensitive. The optimal value of the dimensionless length ratio only depends on the dimensionless width ratio, and can be obtained by solving a nonlinear equation. The determination of the designed parameters is discussed, and some recommendations are made for the RF MEMS switch optimization.

关键词： stepped cantilever beam pull-in voltage modified couple stress theory radio frequency （RF） micro electro-mechanical system （MEMS） switch analytical solution,sensitivity analysis

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A 0.32uW physically unclonable fuction with BER <1.18E-5 using current starved inverters

A 0.32uW physically unclonable fuction with BER <1.18E-5 usi...

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2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016

作者： Lyu, Yinxuan Feng, Jianhua Ye, Hongfei He, Chunhua Yu, Dunshan Instituteof Microelectronics Peking University Beijing100871 China Information Research Tianjin300450 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory No.5 Electronics Research Institute Ministry of Industry and Information Technology Guangzhou510610 China

ISBN: (纸本)9781509018307

A novel kind of mono-stable static physically unclonable function (PUF) based on current starved inverters is proposed with ultralow power and high reliability. The design is verified in a standard 40nm low leakage CMOS process to achieve as low as 2.44% native bit error rate (BER) in the worst operation condition. Majority voting technique is used to further improve the BER down to 1.18E-5. In addition, an average power consumption as low as 0.32uW is achieved with a supply voltage of 1.1V. Moreover, the reported superior uniqueness of 0.4999 and standard deviation of uniqueness of 0.0044 further validate the excellent security of the proposed circuit. © 2016 IEEE.

关键词： Bit error rate

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Conducted Emission of I/O Pins near Power Pairs of A Microcontroller Integrated Circuit

Conducted Emission of I/O Pins near Power Pairs of A Microco...

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Asia-Pacific Symposium on Electromagnetic Compatibility

作者： Shuai Ma Min Pan Wenxiao Fang Ping Lai China Electronic Produce Reliability and Environmental Testing Research Institute China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9781467383103

In this paper, we investigate the conducted emission of I/O pins near power pairs of a microcontroller integrated circuit. Our investigation show that with the increase of the distance from the power pairs the I/O pin gives decreasing conducted emission. The spread of the conducted emission from power pairs to I/O pins can be depicted by mutual inductance and mutual capacitor in a lumped circuit model.

关键词： Electromagnetic compatibility Conducted emission Integrated circuit emission modeling

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Influence of heavy ion irradiation on DC and gate-lag performance of AlGaN/GaN HEMTs

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Chinese physics B 2015年第5期24卷 433-437页

作者：雷志锋郭红霞曾畅陈辉王远声张战刚 Key Laboratory of Low Dimensional Materials & Application Technology of Ministry of Education Xiangtan University Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Northwest Institute of Nuclear Technology

AlGaN/GaN high electron mobility transistors （HEMTs） were irradiated by 256 MeV 127I ions with a fluence up to 1 × 10^10 ions/cm2 at the HI-13 heavy ion accelerator of the China Institute of Atomic Energy. Both the drain current ld and the gate current Ig increased in off-state during irradiation. Post-irradiation measurement results show that the device output, transfer, and gate characteristics changed significantly. The saturation drain current, reverse gate leakage current, and the gate-lag all increased dramatically. By photo emission microscopy, electroluminescence hot spots were found in the gate area. All of the parameters were retested after one day and after one week, and no obvious annealing effect was observed under a temperature of 300 K. Further analysis demonstrates that swift heavy ions produced latent tracks along the ion trajectories through the hetero-junction. Radiation-induced defects in the latent tracks decreased the charges in the two-dimensional electron gas and reduced the carrier mobility, degrading device performance.

关键词： GaN HEMTs irradiation heavy ions

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