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Mechanical Deformation Mechanism of Fiber Reinforced Composites T-joints

IOP Conference Series: Materials science and Engineering 2017年第1期207卷

作者： Wei Su Ke-qiang Cheng Ren-huai Liu Shi-qing Huang Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China MOE Key Lab of Disaster Forecast and Control in Engineering Jinan University Guangzhou China Department of Mechanics and Civil Engineering Jinan University Guangzhou China

In this paper, we focus on the need for ideal theory analytical solution of mechanical deformation mechanism for T-joints. Through removing unnecessary constraints, stress equivalence system of T-joints can be established by force method. Solution equations of unknown nodal forces and the total vertical displacement can also be obtained, and this result can be used to evaluate strength of FRC T-joints.

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Multiple Parameters Side Channel Signal Analysis Using in Hardware Trojan Detection

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Journal of Donghua University(English Edition) 2015年第6期32卷 1055-1059页

作者：刘燕江王力纬谢云冯秋丽侯波 Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology School of Automation Guangdong University of Technology

As the process of economic globalization deepens,a large variety of integrated circuit designers tends to move the chip's manufacturing to the developing *** during the globalization of semiconductor design and fabrication process,integrated circuits are suffering from increasing malicious alterations from the untrusted foundries,which pose a serious threat to the military,finance,transportation and other critical *** noninvasive approach was presented to measure the physical "sidechannel"parameter of a chip such as current or delay,which is effectively capable of detecting the malicious hardware *** intrinsic relationship of a circuit's side-channel parameters was exploited to distinguish the effect of a Trojan in the presence of large random noise and process noise,such as the Dynamic current(IDDT)versus the maximum operating frequency(Fmax)*** Monte Carlo analysis in Hspice using ± 20% Gauss variations in transistor threshold voltage(Vth)was carried out to simulate the circuit state in the real *** Results show that this approach is effective to detect the ultra-small Trojans.

关键词： integrated circuit side-channel parameter Monte Carlo analysis

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Analysis of 1/f noise for polycrystalline silicon TFTs considering mobility power-law parameter

Analysis of 1/f noise for polycrystalline silicon TFTs consi...

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IEEE International Nanoelectronics Conference (INEC)

作者： Hongyu He Yuan Liu Hao Wang Xinnan Lin Xueren Zheng Shengdong Zhang School of Electrical Engineering University of South China Hengyang China School of Electronic and Computer Engineering Shenzhen Graduate School Shenzhen China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Produce Reliability and Environmental Testing Research Institute Guangzhou China School of Physics and Technology Wuhan University Wuhan China School of Electronic and Information Engineering South China University of Technology Guangzhou China

The 1/f noise characteristics are analyzed for the polycrystalline silicon (poly-Si) thin-film transistors (TFTs) in both subthreshold regime and above-threshold regime. Based on carrier number fluctuation model, our previous 1/f noise model for the amorphous InGaZnO TFTs is applied to the poly-Si TFTs considering mobility power-law parameter. The mobility power-law parameter determines the relationship between normalized drain current noise power spectral density (PSD) and drain current. The relationship is verified by the available experimental data.

关键词： Silicon Thin film transistors Logic gates Low-frequency noise Insulators

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An 80 μw radio frequency frontend used for wearable receivers designed in 180 nm Si technology

An 80 μw radio frequency frontend used for wearable receive...

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作者： Kong, Deyu Shi, Zhengyu Liu, Yang Yu, Qi State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China Reliability Physics and Application Technology of Electronic Component Laboratory Guang Zhou China

In this paper we propose a highly integrated radio frequency frontend (RFFE) with its baseband amplifier and filter, used in low power, implantable or body-worn devices in 400 MHz MICS band. An inductorless low-noise amplifier (LNA) with active balun is introduced, which utilizes common source and common gate structure, self balun and noise canceling technique simultaneously. By using cascaded multi-phase injection locking and frequency multiplication the carrier frequency can be detectable without using a phase locked loop (PLL) and mixer, which enables receiver operating with a lower power dissipation. The baseband amplifier provides a gain of more than 60 dB for the IF and limits the higher harmonics. This design consumes less than 80 μW from a 1 V supply. Its main part occupies 0.025 mm2in 180 nm CMOS technology and it is highly integrated except the crystal oscillator and matching network. Copyright © 2015 American Scientific Publishers All rights reserved.

关键词： Phase locked loops

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A 0.32uW physically unclonable fuction with BER <1.18E-5 using current starved inverters

A 0.32uW physically unclonable fuction with BER <1.18E-5 usi...

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IEEE Conference on Electron Devices and Solid-State Circuits

作者： Yinxuan Lyu Jianhua Feng Hongfei Ye Chunhua He Dunshan Yu Institute of Microelectronics Peking University Beijing China Beida(Binhai) Information Research Tianjin China Peking University Beijing Beijing CN Science and Technology on Reliability Physics and Application of Electronic Component Laboratory No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou China

ISBN: (纸本)9781509018314

A novel kind of mono-stable static physically unclonable function (PUF) based on current starved inverters is proposed with ultralow power and high reliability. The design is verified in a standard 40nm low leakage CMOS process to achieve as low as 2.44% native bit error rate (BER) in the worst operation condition. Majority voting technique is used to further improve the BER down to 1.18E-5. In addition, an average power consumption as low as 0.32uW is achieved with a supply voltage of 1.1V. Moreover, the reported superior uniqueness of 0.4999 and standard deviation of uniqueness of 0.0044 further validate the excellent security of the proposed circuit.

关键词： Decision support systems Conferences Electron devices Solid state circuits reliability

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Simple leakage current and 1/f noise expressions for polycrystalline silicon thin-film transistors

Simple leakage current and 1/f noise expressions for polycry...

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IEEE Conference on Electron Devices and Solid-State Circuits

作者： Hongyu He Wanling Deng Yuan Liu Xinnan Lin Xueren Zheng Shengdong Zhang School of Electronic and Computer Engineering Peking University Shenzhen Graduate School Shenzhen China School of Electrical Engineering University of South China Hengyang China Department of Electronic Engineering Jinan University Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Produce Reliability and Environmental Testing Research Institute Guangzhou China School of Electronic and Information Engineering South China University of Technology Guangzhou China

ISBN: (纸本)9781509018314

Simple drain current and 1/f noise expressions are presented for polycrystalline silicon (poly-Si) thin-film transistors (TFTs) in leakage regime. The leakage current expression Ids is derived from the thermal field emission mechanism. The leakage current noise power spectral density (PSD) expression S Ids is derived from the carrier number fluctuation theory. It is proved that S Ids is proportional to ID S , approximately. The current and noise expressions are verified by available experimental data.

关键词： Leakage currents Silicon Thin film transistors Logic gates Tunneling

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Lithium-Ion Battery Capacity Prediction Using Recursive Least Squares with Forgetting Factor

Lithium-Ion Battery Capacity Prediction Using Recursive Leas...

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2015 International Conference on Electrical, Automation and Mechanical Engineering(EAME 2015)

作者： Z.W.Zhou Y.D.Lu Y.Huang Z.Y.Shi X.Li Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute

ISBN: (纸本)9781510806528

How to predict capacity for lithium-ion battery is one of the most important problems in the field of battery health *** make the newest data more efficiently,this paper proposes recursive least squares with forgetting factor to estimate the coefficients of the linear capacity degradation model,and presents the adaptive capacity prediction based on the estimation *** experiment example demonstrates the effectiveness of the proposed approach

关键词： lithium-ion battery capacity prediction recursive least squares with forgetting factor linear degradation model

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Thermal analysis and reliability evaluation on high power flip chip LED

Thermal analysis and reliability evaluation on high power fl...

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China International Forum on Solid State Lighting (SSLCHINA)

作者： Guo-guang Lu Ming-ming Hao Can-xiong Lai Bin Yao Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou P.R.China

We showed a detailed thermal simulation of a high power flip-chip packaged LED, simulation results show that the junction temperature of the LED is more sensitive to the adhesive layer material between the Si substrate and the 1000μm thick Cu heatsink, and less sensitive to the bonding ball material and the heatsink material. Furthermore, three groups of aging tests were conducted on this type of high power flip chip LED, according to the linear regression analysis, the extrapolated lifetime of the high power flip chip LED at 25°C is 37718 hours, we also obtain an acceleration factor 70.5 of resulting in a thermal activation energy of Ea=0.35eV using Arrhenius function.

关键词： Light emitting diodes Aging Flip-chip devices Heating Junctions Bonding Mathematical model

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Single Event Effects in COTS Ferroelectric RAM Technologies

Single Event Effects in COTS Ferroelectric RAM Technologies

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IEEE Workshop on Radiation Effects Data

作者： Zhangang Zhang Zhifeng Lei Zhenlei Yang Xiaohui Wang Bin Wang Jie Liu Yunfei En Hui Chen Bin Li Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute (CEPREI) Guangzhou China South China University of Technology Guangzhou China CEPREI Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China Chinese Academy of Sciences Institute of Modern Physics Lanzhou China

Single event effects (SEE) in two commercial-off-the-shelf (COTS) Ferroelectric Random Access Memory (FeRAM) technologies were investigated by heavy ions and pulsed laser irradiation. At least six SEE types were observed. The majority of the errors were caused by anomalies in the peripheral circuit, which was confirmed by the mirror SRAM technique, non-volatile test mode, and the detailed error information. Single event upset, single event functional interrupt and single event latchup cross sections were reported, with weak dependence on the supply voltage.

关键词： Random access memory Nonvolatile memory Ferroelectric films Ions Mirrors Radiation effects Bismuth

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High dV/dt immunity MOS controlled thyristor using a double variable lateral doping technique for capacitor discharge applications

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Chinese physics B 2014年第7期23卷 691-696页

作者：陈万军孙瑞泽彭朝飞张波 The State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronics Science and Technology of China The Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory

An analysis model of the dV/dt capability for a metal-oxide-semiconductor （MOS） controlled thyristor （MCT） is developed. It is shown that, in addition to the P-well resistance reported previously, the existence of the OFF-FET channel resistance in the MCT may degrade the dV/dt capability. Lower P-well and N-well dosages in the MCT are useful in getting a lower threshold voltage of OFF-FET and then a higher dV/dt immunity. However, both dosages are restricted by the requirements for the blocking property and the forward conduction capability. Thus, a double variable lateral doping （DVLD） technique is proposed to realize a high dV/dt immunity without any sacrifice in other properties. The accuracy of the developed model is verified by comparing the obtained results with those from simulations. In addition, this DVLD MCT features mask-saving compared with the conventional MCT fabrication process. The excellent device performance, coupled with the simple fabrication, makes the proposed DVLP MCT a promising candidate for capacitor discharge applications.

关键词： MOS controlled thyristor capacitor discharge

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