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High dV/dt immunity MOS controlled thyristor using a double variable lateral doping technique for capacitor discharge applications

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Chinese physics B 2014年第7期23卷 691-696页

作者：陈万军孙瑞泽彭朝飞张波 The State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronics Science and Technology of China The Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory

An analysis model of the dV/dt capability for a metal-oxide-semiconductor （MOS） controlled thyristor （MCT） is developed. It is shown that, in addition to the P-well resistance reported previously, the existence of the OFF-FET channel resistance in the MCT may degrade the dV/dt capability. Lower P-well and N-well dosages in the MCT are useful in getting a lower threshold voltage of OFF-FET and then a higher dV/dt immunity. However, both dosages are restricted by the requirements for the blocking property and the forward conduction capability. Thus, a double variable lateral doping （DVLD） technique is proposed to realize a high dV/dt immunity without any sacrifice in other properties. The accuracy of the developed model is verified by comparing the obtained results with those from simulations. In addition, this DVLD MCT features mask-saving compared with the conventional MCT fabrication process. The excellent device performance, coupled with the simple fabrication, makes the proposed DVLP MCT a promising candidate for capacitor discharge applications.

关键词： MOS controlled thyristor capacitor discharge

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An anti-trojans design approach based on activation probability analysis

An anti-trojans design approach based on activation probabil...

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IEEE Conference on Electron Devices and Solid-State Circuits

作者： Xuwei Ye Jianhua Feng Haoran Gong Chunhua He Weilei Feng Institute of Microelectronics Peking University Beijing China Science and Technology on Reliability Physics Application of Electronic Component Laboratory Guangzhou China

Hardware Trojan, realized by malicious modification of design characteristics, has emerged as a major security concern. The recently proposed Trojan detection methods are mainly classified into two categories: side-channel signal analysis and logic testing. Due to the stealthy nature of Trojan circuits, it's difficult to activate Trojans to perform logic testing. In this paper, an activation probability-based approach is proposed. A probability obfuscation scan chain (POSC) is presented aiming at increasing the difficulty of Trojan insertion and increasing the activation probability of the Trojan circuits. It proves to be very effective in detecting the presence of a Trojan in a circuit. Experimental results on ISCAS benchmark circuits show that this approach can effectively increase Trojan activation probability and make the detection of the Trojan more easily.

关键词： Conferences Electron devices Solid state circuits

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Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs

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Chinese physics B 2014年第9期23卷 154-160页

作者：彭超胡志远宁冰旭黄辉祥樊双张正选毕大炜恩云飞 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory

we investigate the effects of 60^Co γ-ray irradiation on the 130 nm partially-depleted silicon-on-isolator （PDSOI） input/output （I/O） n-MOSFETs. A shallow trench isolation （STI） parasitic transistor is responsible for the observed hump in the back-gate transfer characteristic curve. The STI parasitic transistor, in which the trench oxide acts as the gate oxide, is sensitive to the radiation, and it introduces a new way to characterize the total ionizing dose （TID） responses in the STI oxide. A radiation enhanced drain induced barrier lower （DIBL） effect is observed in the STI parasitic transistor. It is manifested as the drain bias dependence of the radiation-induced off-state leakage and the increase of the DIBL parameter in the STI parasitic transistor after irradiation. Increasing the doping concentration in the whole body region or just near the STI sidewall can increase the threshold voltage of the STI parasitic transistor, and further reduce the radiation-induced off-state leakage. Moreover, we find that the radiation-induced trapped charge in the buried oxide leads to an obvious front-gate threshold voltage shift through the coupling effect. The high doping concentration in the body can effectively suppress the radiation-induced coupling effect.

关键词： partially depleted silicon-on-isolator n-MOSFET sidewall implant shallow trench isolation totalionizing dose

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Erratum for: 3–10 GHz, 6.54-mW CMOS ultrawideband low-noise amplifier using a hybrid structure

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Microwave and Optical technology Letters 2016年第5期58卷

作者： Mingyuan Y. Sun Wei Meng Lim Zhengyu Y. Shi Qi Yu Yang Liu University of Electronic Science and Technology of China Chengdu 610054 People's Republic of China Nanyang Technological University Singapore 639798 Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory Guangzhou Guangdong 510610 People's Republic of China

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A temperature-controlled system for loss measurement of transformer used in switched-mode power supply

A temperature-controlled system for loss measurement of tran...

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International Conference on (ICEPT) electronic Packaging technology

作者： Di Sun Wenxiao Fang Jiale Lu Xiaoqi He Xiaowen Zhang School of Material and Energy Resources Guangdong University of Technology Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China China Electronic Produce Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (纸本)9781467380003

The switch-mode power supply (SMPS) is being widely used in various fields. The reliability of SMPS is directly affected by the degradation and failure of magnetic component of transformer. It is well known that the loss of the magnetic component of transformer consist of iron loss and copper loss. In this paper, The pros and cons of several common loss measurement methods are discussed and a brief overview of temperature-controlled system for loss measurement of transformer in SMPS is proposed. The system can achieve these goals, within specified flux density and high frequency ranges, and at different temperatures, with high speed and accuracy, then MATLAB programming for data analysis and loss calculation. By doing this, The system can rapidly judge whether the damage of SMPS is caused by the loss of magnetic component.

关键词： Temperature measurement Loss measurement Core loss Magnetic cores Voltage measurement Switched-mode power supply Current measurement

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Vibration analysis of traveling wave tube in working conditions

Vibration analysis of traveling wave tube in working conditi...

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International Conference on Vacuum electronics

作者： Huarong Qiu Fangfang Song Haijun Mo Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Produce Reliability and Environmental Testing Research Institute Guangzhou China School of Mechanical and Automotive Engineering South China University of Technology Guangzhou China

ISBN: (纸本)9781479971114

In the process of working, travelling wave tube (TWT) produces high temperature which leads to thermal stress and also bears mechanical vibration. In this paper, thermal analysis, thermal stress analysis and modal analysis on TWT have been done by ANSYS Workbench, and the first six order modal frequencies and modal shapes are obtained. According to the vibration characteristics of TWT in working conditions as well as non-working conditions, the affection of temperature on the vibration characteristics of TWT have been analyzed.

关键词： Vibrations Thermal analysis Employee welfare Temperature Finite element analysis Modal analysis Electron tubes

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Research on non-destructive testing technology for welding defects of TWT collector

Research on non-destructive testing technology for welding d...

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International Conference on Vacuum electronics

作者： Lu Yang Fangfang Song Zhixin Kang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Produce Reliability and Environmental Testing Research Institute Guangzhou China School of Mechanical and Automotive Engineering South China University of Technology Guangzhou China

ISBN: (纸本)9781479971114

The welding defects of TWT collector have an adverse effect on collector's heat dissipation, which easily cause TWT failure, therefore the ultrasonic testing and 3D X-ray testing technology for welding defects of collector are studied. An ultrasonic testing method which can detect three typical brazed areas is presented, and the assessment criteria of welding defects are made. In the research of 3D X-ray testing technology, welding defects are qualitative and quantitative analyzed, and its results are consistent with the ultrasonic testing results. The investigations show that these two test methods are both important technologies that can ensure the welding quality and reliability of TWT collector, which can be applied in the manufacture.

关键词： Testing Welding Acoustics Three-dimensional displays X-ray imaging Surface impedance Heating

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Research on design of the heat dissipation structure of a typical 100w HP-LED streetlight

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Energy Education science and technology Part A: Energy science and Research 2014年第3期32卷 1765-1778页

作者： Pan, Kailin Lin, Hua Guo, Yu Chen, Renzhang Wang, Xin Zhou, Bin School of Mechanical and Electrical Engineering Guilin University of Electronic Technology China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI China

Considering the heat dissipation of the popularization 100W high power LED (HP-LED) streetlight in market at present is not very well, especially the junction temperature and the thermal stress of LED chips are high in relative, some researches were done to improve the performance of LED heat dissipation and increase thermal mechanical reliability and lifetime. In this paper, the structure model is a typical 100W HP-LED streetlight;the maximal junction temperature and the maximal thermal stress were analyzed by ANSYS thermal mechanical simulation. With experimental analysis, the junction temperature of HP-LED streetlight was tested, and then verified the LED junction temperature simulation through comparing with the experimental test. Finally, the heat dissipation structure of 100W HP-LED streetlight was optimized by using orthogonal experiment design method, which the influence of the structural factor to the tested target was analyzed, to guide the design for the heat dissipation structure of LED streetlight. © Sila science. All Rights Reserved.

关键词： Light emitting diodes

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Hybrid LED driver for multi-channel output with high consistency

Hybrid LED driver for multi-channel output with high consist...

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International Conference on ASIC

作者： D. J. Yu Q. Yu Ning Ning Y. Liu Z. Y. Shi State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu P. R. China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory Guangzhou Guangdong P. R. China

In this paper, a hybrid LED driver for multi-channel output with high consistency is presented. The proposed design utilizes voltage buffer arrays to drive large power MOSFET instead of utilizing conventional single voltage buffer. Also, it can achieve high consistency for multi-output stages and avoid the effect of offset voltage which greatly reduces the accuracy. By setting appropriate biasing current of the buffer to drive the gate of the power MOS, the output current matching precision of each channel is nearly unaffected by the offset of each buffer amplifier. At the same time each power MOSFET can work at a high speed.

关键词： Light emitting diodes Logic gates Mirrors Hybrid power systems MOSFET Impedance matching Power generation

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Helix TWT inherent vibration characteristics analysis and reliability design

Helix TWT inherent vibration characteristics analysis and re...

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International Conference on Vacuum electronics

作者： Fangfang Song Huarong Qiu Yunfei En Dongya Lv China Electronic Produce Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou 510610 China South China University of Technology Guangzhou Guangdong CN Beijing Vacuum Electronics Research Institute 100016 China

ISBN: (纸本)9781479971114

This paper reports a method of inherent vibration characteristics and reliability design, of a type of helix TWT structure. The natural frequencies and mode shapes are obtained as results, which provide technical support and the reference for the reliability design. From the stimulant results, weak vibration structure can be determined, According to the motion equation of beam model, the length size, material; structure stiffness can be carried out for optimization design. In this paper, the natural frequency of the structure of have been improved significantly by shortening the output window cantilever length and adding support sleeve design on the top of electron gun.

关键词： Vibrations Electron tubes Shape reliability engineering Optimization Mathematical model

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