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检索条件"机构=Science and Technology Laboratory on Reliability Physics and Application of Electronic Component"

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Anomaly analysis of tensile mechanical properties of welding test pieces

Anomaly analysis of tensile mechanical properties of welding...

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Jing Yao Weiguo Hou Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China Science and Technology on Reliability Physics Application of Electronic Component Laboratory CEPREI Guangzhou China

ISBN: (纸本)9781479966332

Aiming at the mechanical properties abnormality of one welding specimen for an aerospace cylinder, scanning electron microscope (SEM) and metallographic microscope were used to observe and analyze the fracture and weld structure of test pieces under tensile test, and the reason of property abnormality was obtained. On the fracture of welding test pieces under tensile test formed two evident characteristic zones, one of which was the initial zone looking like arc ribbons alternating with each other. More obvious texture structure formed in the welding heat affected zone, whose direction was consistent with that of the fracture in the up arc zonal fracture region. The reason of abnormality of tensile property of welding test pieces was that relatively significant texture structure formed in the welding heat affected zone, while the formation of texture structure was related to the temperature field and stress in the process of welding.

关键词： Welding Morphology Scanning electron microscopy Stress Microstructure Heating

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Accelerated test and life prediction of integrated Dewar for infrared detector

Accelerated test and life prediction of integrated Dewar for...

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Shaohua Yang Canxiong Lai Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component Guangzhou China

ISBN: (纸本)9781479966332

The integrated micro metal Dewar is an essential assembly in the infrared detector, and it is required more than ten years vacuum lifetime during application. In this paper, the critical effect factors and failure mechanisms on the vacuum lifetime were analyzed. Four groups of high temperature accelerated life test were introduced, according to the vacuum degradation mechanism, the end-of-life of samples that under failure criterion were fitted and extrapolated. Based on Weibull distribution, the characteristic lifetime of each group samples and activation energy were calculated. Finally, the dewar lifetime extrapolation to room temperature of work condition was predicted more than 12 years.

关键词： Life estimation Stress Degradation Heating Infrared detectors reliability Metals

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A prognostics and health management roadmap for LED lighting system

A prognostics and health management roadmap for LED lighting...

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Bin Yao Canxiong Lai Yun Huang Guoguang Lu Science and Technology on Reliability Physics Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9781479966332

Prognostics and health management (PHM) can provide early warning of failures, reduce unscheduled maintenance events, extend time interval of maintenance cycle, and reduce the life cycle cost of LED lighting systems. In this paper, LED lamp (composed of a fixed number of LED strings and a driving system) is regarded as LED lighting system. This paper introduces different PHM approaches, including data driven method, model driven approach and so on. A PHM implementation roadmap for LED lighting system is then presented. The process of selecting the prognostic approach and its implementation at different parts of LED lighting system is enabled using failure modes, mechanisms and effects analysis. This paper also presents an evaluation method of the return on investment from implementing PHM in LED lighting systems. By this method, the life cycle cost of an LED lighting system maintained by unscheduled maintenance and the life cycle cost of the same system maintained using a PHM approach can be compared.

关键词： Light emitting diodes Prognostics and health management Lighting Maintenance engineering Degradation Monitoring reliability

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Au electromigration and Ti segregation in TiPtAu gate of PHEMTs

Au electromigration and Ti segregation in TiPtAu gate of PHE...

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Yun Huang Shajin Li Science and Technology on Reliability Physics Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9781479966332

In the paper, an evaluation structure was designed to investigate the degradation of gate metal in PHEMTs, and it can be used to separately appraise the resisted electromigration levels of the evaporated Ti/Pt/Au and the electroplated Au. The results show that the electromigration resistant level of electroplated Au of Ti/Pt/Au-Au is at least four times lower than that of the evaporated Ti/Pt/Au. For the elements of Au, Ga and Ti in gate metal of Ti/Pt/Au-Au, the degradation of diffusing migration was observed by SIMS. In addition, serious segregation and influx for the element of Ti destroyed the performance of the Schottky barrier in gate structure.

关键词： Gold Logic gates Electromigration PHEMTs Degradation Thermal stability

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reliability assessment of Algangan Hemts for high voltage applications based on high temperature reverse bias test

Reliability assessment of Algangan Hemts for high voltage ap...

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Chang Zeng Yuansheng Wang Xueyang Liao Ruguan Li Yiqiang Chen Ping Lai Yun Huang Yunfei En Science and Technology on Reliability Physics Application of Electronic Component Laboratory GuangZhou China

ISBN: (纸本)9781479966332

We have submitted the AlGaN/GaN High electron mobility transistors (HEMTs) to the high temperature reverse bias(HTRB) stress to assess their reliability for high voltage operations. The effects of HTRB stress as a function of the V DG and stress time on the DC parameters and trapping effects were investigated. The study was based on combined DC and pulsed characterization, transient measurement. It provides the following information: 1) the exposure to HTRB may result in a permanent degradation in on-state current, the transconductance, and a slightly positive shift of threshold voltage; 2) the high temperature (T A =175°C) step reverse bias (V DG stepped from 20V to 80V) stress tests revealed that the gate leakage current I GS increased abruptly after 50V stress voltage V DG ; 3) interestingly, the long term high temperature moderate reverse bias(V DG ≤40V) stress resulted in some positive effects such as the decrease of gate leakage current, improved gate lag characteristics and the decrease of current collapse in pulsed measurement during the whole test; 4) the reverse-bias voltage is the key factor but for reliability assessment of AlGaN/GaN HEMTs for high voltage application based on HTRB stress; 5) The degradation mechanism of the gate leakage current under relatively high voltage HTRB test has been ascribed to the degradation metal and semiconductor interface; 6) the improved I-V characteristic under moderately voltage HTRB test has been attributed to the reduction of lateral tunneling current.

关键词： Stress Gallium nitride HEMTs MODFETs Aluminum gallium nitride Logic gates Degradation

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reliability evaluation on 3–5μm solid state lasers

Reliability evaluation on 3–5μm solid state lasers

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Guoguang Lu Mingming Hao Shaofeng Xie Yun Huang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9781479966332

Thermal effects in solid-state laser materials are a critical issue for designing diode-pumped solid-state lasers, the temperature distribution with different pump beam transverse profiles by using finite element method on 3-5μm solid-state laser are give in this paper. Based on the theoretical analysis, the thermal focal length of Tm: YAP crystal "b" direction and "c" direction are also given in this paper. Otherwise, the aging test for 3-5μm solid-state laser is developed, and the aging test results show that the lifetime of 3-5μm solid-state laser is reach to 134 hours.

关键词： Crystals Laser excitation Pump lasers Surface emitting lasers Temperature distribution Power lasers

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Modeling of thermal behavior in the amorphous silicon thin film transistors

Modeling of thermal behavior in the amorphous silicon thin f...

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Yuan Liu Yunfei En Yujuan He Zhifeng Lei Science and Technology on Reliability Physics Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9781479966332

This paper proposed a two-dimensional thermal impedance model for amorphous silicon thin film transistors (a-Si:H TFTs) from a system of coupled energy equations, heat flowing equations and boundary conditions. By using of this model, the channel temperature distribution and thus the maximum channel temperature can be calculated. This model can be applied to describe the thermal behavior and thermal reliability of a-Si:H TFTS in the design phase.

关键词： Thin film transistors Temperature distribution Heating Logic gates Mathematical model Integrated circuit modeling Integrated circuit interconnections

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Experimental research of picosecond pulsed laser irradiating InGaAs photoelectric detectors

Experimental research of picosecond pulsed laser irradiating...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Canxiong Lai Zhifeng Lei Mingming Hao Guoguang Lu Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9781479966332

Great progress in photoelectric detector technology has been achieved during the passed decade. InGaAs photoelectric detectors operate at room temperature with high quantum efficiency for wavelengths up to 1.7microns and are useful for short wavelength IR (SWIR) applications. With the widespread use of photoelectric detectors in different aspects, the study of laser-induced effects such as disturbance and damage to photoelectric detectors is becoming an increasingly concern. In this paper, the responding signals of InGaAs photoelectric detectors under various laser power density and reverse bias are investigated in detail. The generation and transportation behaviors of photogenerated carriers and their contributions to the external response signals are analyzed. Besides, the damage effects induced by a high level of laser power density are also studied. The results are significant for the study on the behaviors of photoelectric detectors under pulsed-laser irradiation.

关键词： Detectors Density measurement Power lasers Power system measurements Indium gallium arsenide Laser modes Laser theory

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application of PEM and OBIRCH to defect localization of integrated circuits

Application of PEM and OBIRCH to defect localization of inte...

引用

3rd International Conference on Materials science and Manufacturing, ICMSM 2014

作者： Lian, Jian Wen Lin, Xiao Ling Yao, Ruo He School of Electron and Information Engineering South China University of Technology Guangzhou 510641 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The Fifth Electronics Research Institute of MIIT Guangzhou 510610 China

ISBN: (纸本)9783038350460

With the increasing integration and complexity of microelectronic devices, fault isolation has been challenged. Photon Emission Microscopy (PEM) and Optical Beam Induced Resistance Change (OBIRCH) are effective tools for defect localization and fault characterization in failure analysis. In this paper, the principles and different application condition of PEM and OBIRCH are discussed. PEM is very helpful for locating defects emitting photon, but can not detect the defects which have no photon emitting, such as shorted metal interconnects;OBIRCH as a complementary, has a high success rate for locating resistance defects. Two cases with failure mechanisms illuminated are presented to show the different application of PEM and OBIRCH. © (2014) Trans Tech Publications, Switzerland.

关键词： Defects

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Hermetic Packaging of Kovar Alloy and Low-carbon Steel Structure in Hybrid Integrated Circuit(HIC)System Using Parallel Seam Welding Process

Hermetic Packaging of Kovar Alloy and Low-carbon Steel Struc...

引用

The 15th International Conference on electronic Packaging technology (ICEPT 2014) ) (第十五届电子封装技术国际会议)

作者： Junde Wang Xunping Li Yunfei En Xiaoqi He Xinping Zhang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Gua Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Gua School of Materials Science and Engineering South China University of Technology Guangzhou China

This work aims to characterize the microstructure and temperature field of the hermetic packaging structure by welding the cover made of Kovar alloy and the base made of a low-carbon low-alloy steel(i.e.,#10 steel)using parallel seam welding(PSW)*** microstructure of welded joints and distribution of elements were analyzed by scanning electron microscopy(SEM)equipped with energy dispersive spectrometer(EDS).Welding mechanism of PSW is discussed and temperature field of PSW is studied by a nonlinear transient finite element *** FEM simulation,the surface contact pair is created to form weld beam and the heat generated by a pulse current is taken as a moving heat *** results show that the maximum temperature in the weldment is 1105.3℃,which is below the melting point of Kovar alloy and #10 steel(both in 1400~1500℃).The cross-sectional microstructure analysis results of the welded joint show that welded junction is localized between the plating layers of two base materials,both Kovar alloy and #10 steel did not melt during the welding *** simulation value of the temperature at the plating coat layer on Kovar side is larger than that on #10 steel because of boundary conditions and thermal *** phenomenon can be seen at the location 3 mm away from the *** temperature on the node of Kovar with a distance of 5 mm from the weldment is 796℃.

关键词： hermetic packaging parallel seam welding microstructure welding temperature field

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