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检索条件"机构=Science and Technology Laboratory on Reliability Physics and Application of Electronic Component"

共 497 条记录，以下是371-380 订阅

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Location techniques of failure analysis ESD damage in electronic component

Location techniques of failure analysis ESD damage in electr...

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Ping Lai Youliang Wang Xiaosi Liang Xianjun Kuang Jinlin Zou Science and Technology on Reliability Physics Application of Electronic Component Laboratory Guangzhou P. R. China Reliability Research and Analysis Center CEPREI Guangzhou P. R. China

ESD damage is often slight and even imperceptible. It is important to locate the damage in order to make sure if the damage is caused by ESD or not, before correct improvements can be adopted. Some location techniques... 详细信息

ISBN: (纸本)9781479966332

关键词： Electrostatic discharges Failure analysis Scanning electron microscopy Optical microscopy Integrated optics Optical imaging

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A prognostic cell for electromigration failure of integrated circuit

A prognostic cell for electromigration failure of integrated...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： X. B. Xu Y. Q. Chen Y. D. Lu B. Wang School of Materials Science and Engineering South China University of Technology Guangzhou China Science and Technology on Reliability Physics Application of Electronic Component Laboratory Guangzhou China School of Electronic and Information Technology South China University of Technology Guangzhou China

As we know, expendable prognostic cell, such as "canary" and fuse, is a kind of method that can be applied for prognostics, and it fails earlier than the host product, which provides advance warning of failure. In this paper, a prognostic cell was proposed for electromigration (EM) failure of integrated circuit(IC), and it is composed of stress and detection module, two-stage low gain amplifier, high gain comparator, non-overlapping clock generation module, bias voltage generation module, and output module. The prognostic cell was designed to fail faster than host circuit, and was successfully simulated on the base of SMIC 0.18 urn mixed-signal CMOS process model. The output of the prognostic cell could accurately flip from low voltage to high voltage as the amount of resistance increased by more than 20% caused by EM, and the function was verified experimentally. This indicates the impending failure of host circuit, which shows that the present prognostic cell can be used to provide advance warning of EM failure. The research results are useful for the reliability insurance and failure prediction of IC.

关键词： Stress Electromigration Integrated circuits Clocks Resistance Computer architecture Voltage measurement

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Study on annealing effects of irradiated Ga0.5In0.5P/GaAs/Ge solar cell by 170 keV proton

Study on annealing effects of irradiated Ga0.5In0.5P/GaAs/Ge...

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Long Yue Yiyong Wu Qiujiao Fu Yanqing Zhang Science and Technology on Reliability Physics Application of Electronic Component Laboratory Guangzhou China CPI JiangXi Nuclear Power Co. LTD JiuJiang China Harbin Institute of Technology Harbin China

ISBN: (纸本)9781479966332

In this paper, the degradation and annealing behavior of irradiated Ga 0.5 In 0.5 P/GaAs/Ge solar cells by 170 keV proton were investigated through light I-V and dark I-V analysis. Ga 0.5 In 0.5 P/GaAs/Ge solar cells were firstly irradiated by 170 keV proton with faience up to 1×10 12 p/cm 2 using equivalent ground simulation facility. The results indicated that 170 keV proton irradiation could introduce large amount of vacancies into base region of solar cells, and induce the degradation of light I-V properties of solar cells. The irradiated solar cells were annealed using isothermal annealing technique at 423 K It was shown that after annealing process, the open-circuit voltage (V oc ), short-circuit current (I sc ) and maximum power (P max ) of irradiated Ga 05 In 05 P/GaAs/Ge solar cells recovered with annealing time firstly, and then reach to a saturated level. Four parameter including series resistance (R s ), shunt resistance (R sh ), diffusion-junction reverse saturation current (I sl ) and recombination-junction reverse saturation current (I sc ) can be extracted from dark I-V curves of solar cells by non-linear numerical fitting. The results of evolution of light I-V and dark I-V indicated defects in the region near the junction show longer-time annealing dynamic behavior compared with defects in junction region.

关键词： Photovoltaic cells Annealing Gallium arsenide Junctions Protons Radiation effects Degradation

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Thermal coupling effects and thermal resistance matrix research of multi-heat sources MCM

Thermal coupling effects and thermal resistance matrix resea...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Ji Cheng Xiaoqi He Xunping Li Bin Zhou Hengwei Bao Lianrong Zhou Zhangchao Wang School of Materials and Energy Guangdong University of Technology Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China East China Research Institute of Microelectronic Hefei China

ISBN: (纸本)9781479966332

High density assembly results in evident thermal coupling effect among chips in MCM. Junction temperature is decided by self-heating effect and thermal coupling effect. It can be accurately calculated by using the thermal resistance matrix. This paper focused on thermal coupling effect and presented heat conduction routes and thermal resistance model of three different MCM (lateral-chip, stacked-chip and lateral-and-stacked chip). Based on linear superposition theory, the thermal resistance matrix was established by FEA simulation, the model of calculating junction temperature was obtained by thermal resistance matrix. The model was verified by infrared thermal imaging equipment and the relative error was less than 2%.

关键词： Thermal resistance Junctions Couplings Thermal conductivity Thermal analysis Heating

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Effect of gold wire configuration parameters on the reliability of the stacked die package

Effect of gold wire configuration parameters on the reliabil...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Y. Tang P. F. Zhang B. Zhou G. Y. Li College of Automation Zhongkai University of Agriculture and Engineering Guangzhou China School of Electronic and Information Engineering South China University of Technology Guangzhou China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory Guangzhou China

Based on the module design of DTV receiver subsystem, effect of gold wire configuration parameters on the reliability of stacked die package for CPU and DDR chips was investigated by finite element method (FEM). In order to meet the requirement of the minimized package and rapid signal transmission between chips, the BGA package suitable for minimization was selected as packaging type, the 3D stacked die package was adopted as packaging structure, and wire was used as interconnection. Results show that the wire geometric parameters affected the quality of wires. With an increase in loop height, the stress of joints decreases. However, the central portion of wire deformation increases and results in short-circuit between fine pitch wires. Hence, the loop height of 150μm was optimized for this special package. With an increase in horizontal spacing of wire, the stress of joints decreases. When the horizontal spacing of wire is greater than 7mm, serious deformation appears at the central of wire. Thus, the horizontal spacing of wire might be controlled in the range of 1-6mm. When the vertical spacing of pad ranges from 0.2mm to 1.2mm, the stress of solder joints firstly increases and then decreases, and the central portion of wire deformation increases slightly. The optimized vertical spacing of pad is 0.2mm, 0.5mm, and 0.7mm. Results of this study could be a good reference for the selection of wire configuration of the stacked die package.

关键词： Wires Stress Joints Strain Bonding Gold reliability

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The effect of Pb content on the solidification behavior and shear performance of Sn3.0Ag0.5Cu/Cu joint

The effect of Pb content on the solidification behavior and ...

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Xunping Li Bin Zhou Xiongfeng Wei Yunfei En Xin Wang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The 5 Electronics Research Institute of Ministry of Information Industry. Guangzhou P. R. China Guilin University of Electronic Technology Guilin Guangxi CN

ISBN: (纸本)9781479966332

The effect of Pb content in the rang of 0~37wt.% on solidification behavior and shear performance of Sn3.0Ag0.5Cu/Cu joint was investigated. It was shown that Pb contamination showed a significant influence on the solidification behavior of Sn3.0Ag0.5Cu/Cu joint. A little amount of Pb resulted in the formation of ternary eutectic Sn-Pb-Ag phase with a low melting temperature and a mushy region between primary solidification phase and Sn-Pb-Ag phase during solidification stage of mixed joint. The mushy zone decreased with the increasing of Pb content and disappeared when Pb content in solder matrix of joint exceeded 18.34wt.% The addition of Pb in Sn3.0Ag0.5Cu/Cu joint has been shown to be beneficial to improve the shear force of SAC/Cu joint by using ball shear test method and the shear force of single interface mixed solder joint was in parabolic relationship with Pb content. The formation of ternary eutectic Sn-Pb-Ag phase and mushy zone in solidification stage had no obvious influence on the shear force of mixed solder joint.

关键词： Lead Joints Soldering Microstructure Force reliability

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Study on fatigue ductility coefficient and life prediction for mixed solder joints under thermal cycle loads

Study on fatigue ductility coefficient and life prediction f...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Bin Zhou Tao Lu Jincheng You Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China School of Mechanical and Electrical Engineering Guilin University of Electronic Technology Guilin Guangxi CN School of Mechanical and Electrical Engineering Guilin University of Electronic Technology Guangzhou Guangdong CN

ISBN: (纸本)9781479966332

Lead-free solder ball of PBGA with SnPb solder paste in the weight ratio of 1:0.5 was mounted for mixed soldering experimental sample. Temperature cycling experiment was carried out at -55 °C ~ +125 °C conditions. The event detector was employed to monitor the solder joint failure in realtime in terms of IPC-9701 standard, and the Weibull curve of mixed solder joint failure was established. Thermal fatigue ductility coefficient of mixed solder joints was deduced based on the failure data of solder joints and IPC-SM-785 standard. Moreover, the microstructure and the failure mode of mixed solder joints were analyzed during different thermal cycles using scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The results showed that the thermal fatigue ductility coefficient of mixed solder joints was 0.8306, which is greater than 0.325 of Sn63Pb37 solder joints because of the larger elastic modulus of mixed solder increasing its brittleness. The mixed solder joints cracking in temperature cycling test begin from the lead-rich region in corners. Crack interface presents grain boundary slip characteristics, which suggest the grain boundary dislocations caused by shear stress is still the main reason of solder joints cracking. The growth of IMC layer in mixed solder joints is not sensitive to temperature cycling condition, and there are lead-rich phase, Cu 6 Sn 5 alloys and Ag 3 Sn alloys coexistence inside the mixed solder joints after thermal cycles. Further research for long-term reliability regular data is still needed.

关键词： Soldering Fatigue Lead reliability Microstructure Scanning electron microscopy

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Supply voltage dependence of single event upset sensitivity in diverse SRAM devices

Supply voltage dependence of single event upset sensitivity ...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Zhangang Zhang Jie Liu Youmei Sun Mingdong Hou Teng Tong Song Gu Tianqi Liu Chao Geng Kai Xi Huijun Yao Jie Luo Jinglai Duan Dan Mo Hong Su Zhifeng Lei Yunfei En Yun Huang Science and Technology on Reliability Physics Application of Electronic Component Laboratory Guangzhou China Material Research Center Chinese Academy of Sciences Lanzhou China Institute of Modern Physics Chinese Academy of Sciences Lanzhou Gansu CN

ISBN: (纸本)9781479966332

Experimental evidences are presented showing the variety of supply voltage dependence of single event upset (SEU) sensitivity in diverse SRAM devices. Devices under test (DUTs) from Alliance Memory, ISSI and IDT companies with different technologies were irradiated by several kinds of heavy ions at Heavy ion Research Facility in Lanzhou (HIRFL) cyclotrons. For the Alliance 256 kb SRAM device, SEU cross section increases by more than one order of magnitude as supply voltage decreases from 5.0 V to 3.0 V. SEU data of Alliance 64 kb SRAM also exhibits significant supply voltage dependence. The reduction of critical charge is the predominant factor worsening the device performance. While for the Alliance 8 Mb, ISSI 2 Mb and IDT 256 kb SRAM devices, no obvious trend was observed, which is attributed to the negligible net contribution of competing mechanisms. Those results suggest that the worst-case supply voltage for evaluation of SEU sensitivity depends on the test devices.

关键词： Random access memory Single event upsets Silicon MOSFET Sensitivity Transient analysis

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Effect of nano-dopant on intermetallic compounds growth in Sn-3.0Ag-0.5Cu-xBi solder joints during aging process

Effect of nano-dopant on intermetallic compounds growth in S...

引用

The 15th International Conference on electronic Packaging technology (ICEPT 2014) ) (第十五届电子封装技术国际会议)

作者： Y.Tang B.Zhou Z.Z.Wu G.Y.Li J.H.Huang School of Electronic and Information Engineering South China University of TechnologyGuangzhouChin Science and Technology on Reliability Physics and Application Technology of Electronic Component Lab School of Electronic and Information Engineering South China University of TechnologyGuangzhouChin

The effect of nano-Bi particles on the growth of intermetallic compound(IMC)between Sn-3.0Ag-0.5Cu-xBi(x=0.0,0.8,1.5,2.5,3.5,and 4.5 wt.%)solder and Cu substrate during aging process at temperatures of 120,150,and 190℃ has been investigated in this *** electron microscopy(SEM)was used to observe the microstructural evolution of the solder joints and measure the thickness of IMC *** dispersive X-ray(EDX)was adopted to identify the composite of the IMC *** activation energies and growth rates of the IMC layer were *** show that adding nano-Bi into Sn-3.0Ag-0.5Cu solder can increase activation energy and thus reduce the atomic diffusion rate,so as to suppress the excessive growth of the IMC *** solder joints containing about 0.8wt.%nano-Bi has the highest activation energy and the lowest growth *** images reveal that with an increase in nano-Bi to 0.8 wt.%,the number of small particles precipitated along grain boundary reaches *** on the observation of the microstructural evolution of the solder joints,a grain boundary pinning mechanism for inhibition of the IMC grow due to nano-Bi addition is proposed.

关键词： lead-free solder nano-dopant intermetallic growth activation energy

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Thermal analysis of high power laser diodes by electro-thermal indirect coupling finite-element method

Thermal analysis of high power laser diodes by electro-therm...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Mingming Hao Xia Liu Ligang Tan Hongbo Zhu Science and Technology on Reliability Physics Application of Electronic Component Laboratory Guangzhou China Software Quality Engnerring Research Center China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China State Key Lab on High Power Semiconductor lasers Changchun University of Science and Technology Changchun China State Key Laboratory of Luminescence and Application Chinese Academy of Sciences Changchun China

ISBN: (纸本)9781479966332

Since the invention of laser diodes, research on thermal management has become a hot topic during last decade because the problem not only restrict output power of the laser diodes but also influence the reliability of the devices. Electro-Thermal indirectly coupling method was used to calculate temperature distribution of a CW p-side-down high power diode laser, the result show that the highest temperature of p-side-down laser diode is just 34.7°C, which is lower than that of 51.1'C calculated by simply thermal method. Experiment result indicated that the junction temperature is 36.7°C which is more closer to the indirectly coupling method. Temperature of p-side-up diode laser is also studied by FEM and the result shows that the temperature is as high as 90.9 °C, therefore the p-side-down method is priority than p-side-up method. Relationship between emitter width/cavity length and junction temperature has also been investigated, the result shows that with the increasing of emitter width and cavity length the junction temperature reduce rapidly. Thermal effect of the diode laser working at QCW mode has also been studied. When the repetition rate is 1kHz and pulse width is 200μs, the temperature at end of period is equal to ambient temperature even the peak current reach to 1000A. The temperature at end of period is also equal to ambient temperature when the pulse width is at 600μs. But when the repetition rate increase to 6kHz, the temperature at end of period would be increased rapidly with the peak current is 255A.

关键词： Diode lasers Heating Temperature distribution Junctions Finite element analysis Semiconductor lasers Couplings

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