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Enhanced Radiation Sensitivity in Short-Channel Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors

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Chinese physics Letters 2013年第9期30卷 185-189页

作者： PENG Chao ZHANG Zheng-Xuan HU Zhi-Yuan HUANG Hui-Xiang NING Bing-Xu BI Da-Wei State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050 Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory Guangzhou 510610

The total ionizing dose effects of partially depleted silicon-on-insulator(SOI)transistors in a 0.13𝜈m technology are studied by^(60)Co𝛿-ray *** enhanced drain-induced barrier lowering(DIBL)under different bias conditions is related to the parasitic bipolar in the SOI transistor and oxide trapped charge in the buried oxide,and it is experimentally observed for short channel *** enhanced DIBL effect manifests as the DIBL parameter increases with total *** doping concentration is a key factor affecting the total ionizing dose effect of the *** low body doping transistor exhibits not only significant front gate threshold voltage shift as a result of the coupling effect,but also great off-state leakage at high drain voltage due to the enhanced DIBL effect.

关键词： drain transistor bipolar

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RETRACTED ARTICLE: Measurement of ESD protection structure irradiation degradation using TLP method

RETRACTED ARTICLE: Measurement of ESD protection structure i...

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2013 International Conference on Quality, reliability, Risk, Maintenance, and Safety Engineering, QR2MSE 2013

作者： Shi, Qian Xiao, Qing-Zhong Liu, Yuan En, Yun-Fei Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Produce Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (纸本)9781479910144

Ionization radiation causes ESD protection structure of integrated circuit degradation. A new method using Transmission Line Pulse (TLP) test is introduced in this article; this method gives more detailed information of the ESD protection structure's degradation. Turn-on voltage, hold voltage, turn-on resistance of two type ESD protection structures are measured before and after TID radiation test, results are discussed. © 2013 IEEE.

关键词： Electrostatic discharge

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RETRACTED ARTICLE: The failure mode and mechanism analysis of filament in heater of traveling wave tube

RETRACTED ARTICLE: The failure mode and mechanism analysis o...

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2013 International Conference on Quality, reliability, Risk, Maintenance, and Safety Engineering, QR2MSE 2013

作者： Song, Fangfang He, Xiaoqi En, Yunfei Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou Guangdong China

ISBN: (纸本)9781479910144

Traveling wave tube (TWT) is a type of microwave vacuum electronic component. TWT often works under harsh mechanical environment stress, such as vibration, shock. The stress leads to the open circuit of filament in heater, which results in the change of inner structure and electric performances, even failure. This paper introduced a failure case of TWT in use. Failure mode and failure mechanism of filament in heater of a typical TWT was analyzed in this paper. © 2013 IEEE.

关键词： Failure (mechanical)

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Modal and harmonic response analysis of PBGA and S-N curve creation of solder joints

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Sensors and Transducers 2013年第12期161卷 311-317页

作者： Guo, Yu Pan, Kailin Wang, Xin Lu, Tao Zhou, Bin School of Mechanical and Electrical Engineering Guilin University of Electronic Technology 1 Jinji Road Guilin 541004 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI 110 Dongguanzhuang Road Tianhe District Guangzhou 510000 China

In recent years, with the rapid development of the microelectronics industry and the wide application of high-density packaging of electronic products, the environmental requirements for electronic products become harsh increasingly. In addition to the thermal stress, the micro-assembly device will also withstand the effects of vibration and shock with different forms, which may aggravate the elastic and plastic deformation of solder. So that increasing the accumulation of fatigue damage and even make entire electronic product failure. This paper focus on the vibration reliability of PBGA, the model test is conducted in order to ascertain the natural frequency and damping ratio, amplification coefficient, and then sine sweep test at different excitation conditions can be carried out until a solder joint become failure. The finite element model is developed by the ANSYS software. By comparing the results, the stress and strain distribution of failure joint in the first-order frequency range are attained. Finally, a numerical simulation method to obtain the curve of stress and number of the cycle to fail is developed in this paper. © 2013 IFSA.

关键词： Modal analysis

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Analysis of temperature and residual stress distribution in laser welding for Ta/Mo lap joints using FEM

Analysis of temperature and residual stress distribution in ...

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International Conference on Metallic Materials and Manufacturing technology, ICMMMT 2013

作者： Jin, Liang Song, Fang Fang Wei, Guo Qiang Guo, Qi South China University of Technology School of Mechanical and Automotive Engineering Guangzhou 510640 China Science and Technology on Reliability Physics Application Technology of Electronic Component Laboratory Guangzhou 510610 China

ISBN: (纸本)9783037858806

A nonlinear transient three-dimensional finite element model for the laser welding process is developed to investigate the temperature and residual stress distribution. All the major physical phenomena associated to the laser welding process, including temperature dependent thermo-physical and mechanical properties are taken into account in the model. The heat input to the model is assumed to be a Gaussian heat source. Results show that the temperature distribution of laser welding is consistent with the actual, and along-welding line longitudinal stress and transverse stress are retained in the weld zone after laser welding and cooling to the room temperature. © (2013) Trans Tech Publications, Switzerland.

关键词： Residual stresses

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Simulation of the squeeze film damping in a RF MEMS switch

Simulation of the squeeze film damping in a RF MEMS switch

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2nd International Conference on Mechanical Engineering, Industrial electronics and Informatization, MEIEI 2013

作者： Li, Xiang Guang Huang, Qin Wen Wang, Yun Hui School of Information and Communication Engineering North University of China Taiyuan 030051 China China Electronic Produce Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou 510610 China

ISBN: (纸本)9783037858905

Two different dynamic models have been presented to investigate the transient mechanical response of a RF MEMS switch under the effects of squeeze-film damping based on a modified Reynolds equation. Both the perforated and non-perforated structures are built for comparison. The models include realistic dimensions. The surface pressure, the damping force, and the tip displacement are simulated in three different ambient pressures, such as 500Pa, 5kPa, and 0.05MPa. The result shows that the increased damping leads to a substantial decrease in oscillation with increasing pressure for the non-perforated structure. Compared with the perforated pad, there is a much larger damping force acts on the non-perforated surface, and an obvious decrease in damping force with increasing pressure. © (2013) Trans Tech Publications, Switzerland.

关键词： Damping

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A study of the mechanical reliability of a MEMS microphone

A study of the mechanical reliability of a MEMS microphone

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International Symposium on Physical & Failure Analysis of Integrated Circuits

作者： Wenxiao Fang Qinwen Huang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China

This paper describes a failure analysis on a commercial MEMS microphone after a test according to the standard of Mil-Std-883. With the help of test and a finite element simulation, we find that the studied MEMS part of the microphone can survive a stress limit above 20000g normal to the diaphragm plane. Under a constant acceleration high to 30000g, the diaphragm breaks and the devices fail.

关键词： Micromechanical devices Microphones Stress Acceleration reliability Silicon Standards

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Critical factors on the hermetic characteristics of DC/DC power module

Critical factors on the hermetic characteristics of DC/DC po...

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2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013

作者： Li, Xunping He, Xiaoqi En, Yunfei Qi, Guo Science and Technology on Reliability Physics and Application of Electronic Component Laboratory 5th Electronics Research Institute of Ministry of Information Industry Guangzhou China School of Mechanical and Automotive Engineering South China University of Technology Guangzhou China

ISBN: (纸本)9781479912414

The hermeticity of DC/DC power module was analyzed by using finite element thermal analysis software ANSYS to address the critical factors on the reliability issues of glass insulator (or hermeticity). It was found that shell structure parameters, such as the diameter and shape of hole, the thickness of cover and bottom board, especially the boundary constraints make significant influences on the hermitcity of DC/DC during assembly and testing. © 2013 IEEE.

关键词： Finite element method

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The response of electrostatic MEMS structure under mechanical shock and electrostatic forces

The response of electrostatic MEMS structure under mechanica...

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2nd International Conference on Mechanical Engineering, Industrial electronics and Informatization, MEIEI 2013

作者： Li, Xiang Guang Huang, Qin Wen Wang, Yun Hui Jia, Yu Bin Wang, Zhi Bin School of Information and Communication Engineering North University of China Taiyuan 030051 China China Electronic Produce Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou 510610 China Institute of Microelectronics Peking University Beijing 100871 China

ISBN: (纸本)9783037858905

For MEMS devices actuated by electrostatic force, unexpected failure modes can be hardly predicted when the electrostatic force coupled with the shock. A response model is established when a micro cantilever subjected to electrostatic force and mechanical shock. First, based on the theory of transverse forced vibration in vibration mechanics, the equation of motion under shock and electrostatic fore is presented. Then the reduced order model is gained after simplifying by mode superposition method. The computing results indicate that: the shock amplitude and duration are the key factors to affect the reliability of the device;the shock load and electrostatic forces make the threshold voltage much lower than the anticipated value. The micro cantilever may collapse to the substrate even at a voltage far lower than the pull-in voltage. This early dynamic pull-in instability may cause some failures such as short circuit, adhesion or collision damage. © (2013) Trans Tech Publications, Switzerland.

关键词： Electrostatic force

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Construction analysis for inherent reliability evaluation of surface acoustic wave filters

Construction analysis for inherent reliability evaluation of...

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International Conference on (ICEPT) electronic Packaging technology

作者： Hong-Zhi Liu Xin Liu Yun-Fei En Yun Huang Ping Lai Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (纸本)9781479904990

Inherent reliability of Surface acoustic wave filters plays a key role for its application in the mobile communication systems. Construction analysis is an effective method for evaluating the inherent reliability of electronic components. This work provides a construction analysis process for the surface acoustic wave filters, which includes external encapsulation analysis, internal encapsulation analysis and chip-level analysis. The results show that oxidation occurs on the upper surface of the Al electrodes and leads to the formation of Al 2 O 3 . The break in the Al electrode stripe is observed.

关键词： SAW filters Electrodes reliability Encapsulation Acoustic waves Substrates Surface acoustic wave devices

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