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International Conference on (ICEPT) electronic Packaging technology

作者： Yuan Chen Na Lin Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The 5th Electronic Institute of MII Guangzhou China School of Electronic and Information Engineering South China University of Technology Guangzhou China

ISBN: (纸本)9781479904990

System in Package (SiP) technology is rapidly evolved from specialty technology used in a narrow set of applications to a high volume technology with wide ranging impact on electronics markets. Numerous concepts for three dimensional (3D) SiP packaging are now emerging driven largely by the demands of portable consumer products. Conventional failure analysis techniques face a great challenge for SiP devices. 3D X-Ray technique can capture three-dimensional information about the internal structure of an object. It is very useful for 3D SiP failure analysis. This paper introduced the technology and methodology of 3D X-Ray Inspection with Computed Tomography. And 3D X-Ray analysis methods aiming at the structure and process characteristics of SiP were discussed. A case using 3D X-Ray technique analyzing a SiP sample was presented.

关键词： X-ray imaging Three-dimensional displays Computed tomography Inspection Image reconstruction Failure analysis Soldering

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Design of prognostic circuit for electromigration failure of integrated circuit

Design of prognostic circuit for electromigration failure of...

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International Symposium on Physical & Failure Analysis of Integrated Circuits

作者： Y. Q. Chen B. Wang Y. F. Zhang Y. F. En Y. Huang Y. D. Lu L. X. Liu X. H. Wang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou Guangdong School of Electronic and Information Technology South China University of Technology Guangzhou Guangdong Science and Technology on Reliability Physics and Application of Electronic Component Laboratory and the No.5 Electronics Research Institute of Ministry of Industry and Information Technology Guangzhou Guangdong China Department of Microelectronics Xidian University Xi'an Shanxi China

ISBN: (纸本)9781479904792

A prognostic circuit for electromigration failure of integrated circuit was proposed, and it was simulated on the base of the SMIC 0.18 um mixed-signal CMOS process model. The prognostic circuit is composed of stress and detection module, two-stage comparator, offset voltage cancellation module, non-overlapping clock generation module, and output module. When the increase amount of resistance for interconnect line exceeds a preset value due to electromigration, the output of the prognostic circuit designed to fail faster will jump from low voltage to high voltage. It indicates the impending failure of hosted circuit because of that the prognostic circuit experiences the same manufacturing process and operational environment as the hosted circuit. The research results are useful for the prediction of performance degradation and failure of integrated circuit.

关键词： reliability Packaging Monitoring

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Sensitive analysis of EMI effect in the μA741 operational amplifier circuit

Sensitive analysis of EMI effect in the μA741 operational a...

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International Conference on Quality, reliability, Risk, Maintenance, and Safety Engineering (ICQR2MSE)

作者： Jin-Li Cheng Yuan Liu Jian-Bo Liu Ai-Xiang Wei Ting Zhang Yun-Fei En Jia-Jun Lv Guangdong University of Technology Guangzhou Guangdong CN School of Material and Energy Guangdong University of Technology Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9781479910151

The electromagnetic interference effects in the μA741 operational amplifier circuit were investigated in this paper. Through the using of pulse injection, the output characteristics of μA741 were simulated by considering of EMI effects. Through sensitivity and smoke analysis, the simulation results shown that the differential input stage and the intermediate amplifying stage are the most sensitive and vulnerable function model in the μA741 circuits to EMI effects.

关键词： Electromagnetic interference Operational amplifiers Integrated circuit modeling Transient analysis Educational institutions Sensitivity

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Lifetime test of 808 nm high power laser diodes

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Guangxue Xuebao/Acta Optica Sinica 2013年第SUPPL.1期33卷

作者： Lu, Guoguang Lei, Zhifeng Huang, Yun En, Yunfei Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Fifth Research Institute of MIIT Guangzhou Guangdong 510610 China

In order to obtain the lifetime index of the single-bar 808 nm high power semicondutor laser, an on-line monitoring system under ten workspaces is set up. Subsequent lifetime tests are completed. The conditions of these tests are 25°C, 100 A, 50°C, 100 A and 50°C, 115 A, respectively. According to the linear regression analysis, the method of least squares, goodness-of-fit test and other statistical knowledge, the power degradation model is obtained. Based on this degradation model the extrapolated lifetime of cm-bars at 25°C is 2.86×109 shots. This lifetime extrapolative method based on the parameter degradation model has some advantages such as short experiment time and high veracity than other traditional accelerated aging test methods.

关键词： Semiconductor lasers

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The application of Fault Tree Analysis Method in Electrical component

The Application of Fault Tree Analysis Method in Electrical ...

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IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

作者： Y. Chen X. Q. He P. Lai Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The Fifth Electronics Research Institute of Ministry of Industry and Information Technology

ISBN: (纸本)9781479904792

Fault tree analysis is a method which is widely used in analysis and forecasting system security and reliability. This analysis method is also applicable for reliability analysis of components. It is first time in domestic to apply FTA techniques to electronic components in this paper. It also introduced the fault tree analysis method for electronic components in detail, including fault tree artificial construction method, qualitative analysis and quantitative analysis methods, which took the failure mode "short" for semiconductor device as an example. According to fault tree analysis for electronic components, it can identify possible failure causes, analyze the major failure causes and present corresponding measures to prevent component failure.

关键词： Fault tree analysis electronic components Electrical components FAILURE MODES component failure Semiconductor devices Construction methods reliability analysis QUANTITATIVE ANALYSIS

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Failure Mechanism of Flip-Chip Circuit Interconnects Induced by Electromigration

Failure Mechanism of Flip-Chip Circuit Interconnects Induced...

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IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

作者： Y. D. Lu B. Y. F. En Z. Y. Shi Science and Technology on Reliability Physics and Application of Electronic Component Laboratory and the No.5 Electronics Research Institute of the Ministry of Industry and Information Technology

ISBN: (纸本)9781479904792

Both Al interconnects and flip-chip solder bumps were sensitive to high current. The failure mechanism of circuits interconnects would be more complicated if the current density in circuits was exceed the critical magnitudes of electromigration in both Al interconnects and solder bumps. The failure of circuit interconnects under different magnitudes of current density was studied and the interaction of electromigration in solder bumps and Al interconnects was discussed. The circuit interconnects of flip chip show three failure phenomena under high current density: voids in Al final metal, inter-diffusion of Al and SnPb, and melting of solder bumps. The voids in Al metal show the directional diffusion of Al atoms was mainly controlled by the electron wind fore. However the inter-diffusion of Al and SnPb demonstrated the electron wind force to Sn and Pb atoms would be ignored in contrast with chemical potential gradient or intrinsic stress. The flow of Sn and Pb atoms under high current density was in opposite direction with electron wind force and uniform with chemical potential gradient.

关键词： Flip chip Electromigration Interconnect Failure

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High breakdown voltage InAlN/AlN/GaN HEMTs achieved by Schottky-Source technology

High breakdown voltage InAlN/AlN/GaN HEMTs achieved by Schot...

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International Symposium on Power Semiconductor Devices and Ics (ISPSD)

作者： Qi Zhou Wanjun Chen Shenghou Liu Bo Zhang Zhihong Feng Shujun Cai Kevin J. Chen State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu Sichuan P.R. China Science and Technology on Reliability Physics and Application Technology of Electronic Component Lab. Guangzhou P.R. China Department of Electronic and Computer Engineering Hong Kong University of Science and Technology Hong Kong The Science and Technology on ASIC Lab. Hebei Semiconductor Research Institute Shijiazhuang P.R. China

In this paper, we demonstrate 253% improvement in the off-state breakdown voltage (BV) of the lattice-matched In 0.17 Al 0.83 N/GaN high-electron-mobility transistors (HEMTs) by using a new Schottky-Source technology. Based on this concept, the Schottky-Source (SS) InAlN/GaN HEMTs are proposed. The SS HEMTs with a L GD of 15 μm showed a three-terminal BV of 650 V, while conventional InAlN/GaN HEMTs of the same geometry showed a maximum BV of 184 V. Without using any field-plate the result measured in the proposed device is the highest BV ever achieved on InAlN/GaN HEMTs. The corresponding specific on-resistance (R sp, on ) is as low as 3.4 mΩ·cm 2 . A BV of 118 V was also obtained in an SS InAlN/GaN HEMTs with L GD =1 μm, which is the highest BV in GaN-based HEMTs featuring such a short L GD with GaN buffer.

关键词： HEMTs MODFETs Gallium nitride Aluminum gallium nitride Gold

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reliability experiment of high power cm-bar arrays

Reliability experiment of high power cm-bar arrays

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2012 13th International Conference on electronic Packaging technology and High Density Packaging, ICEPT-HDP 2012

作者： Lu, Guo-Guang Lei, Zhi-Feng Huang, Yun En, Yun-Fei Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guang Zhou China

ISBN: (纸本)9781467316804

High power laser diodes have found wide spread applications as pump sources for solid state lasers or in direct material processing. Due to the high electrical and optical power densities in the laser structures the reliability is still questionable. We report on lifetime testing of a high power cm-bar arrays using an automated diode array reliability experiment. This computer controlled setup operates the cm-bar array 24 hours a day, and three groups of different operating condition aging test were carried on. Analysis of the aging data suggest that the extrapolated lifetime of cm-bars at 25°C can reach 7950 hours (2.86×109 shots). © 2012 IEEE.

关键词： reliability

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GaAs device Ohmic contact degradation assessment and analysis

GaAs device Ohmic contact degradation assessment and analysi...

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2012 5th Global Symposium on Millimeter-Waves, GSMM 2012

作者： Hong, Xiao Huang, Yun Science and Technology on Reliability Physics and Application of Electronic Component Laboratory 5th Electronics Research Institute Ministry of Industry and Information Technology No.110 Dongguanzhuang Rd GuangZhou China

ISBN: (纸本)9781467313032

GaAs PHEMT are used abroad in high temperature and high power RF/Microwave field;it is the most promising microwave devices. In long-term use, the PHEMT device may cause parameter drift and output power decrease. In this paper, based on the analysis of device structure and degradation mechanism, we design structure doing high-temperature accelerated lift testing, and analyze using SIMS, FIB, EM and other equipment, finally evaluating Ohmic contact of GaAs devices. © 2012 IEEE.

关键词： Ohmic contacts

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Accelerated test and life evaluation method of microwave tube in short vacuum tube

Accelerated test and life evaluation method of microwave tub...

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2012 13th International Conference on electronic Packaging technology and High Density Packaging, ICEPT-HDP 2012

作者： Song, Fang Fang En, Yun Fei Li, Sha Jin Hong, Xiao Su, Xiao-Bao Yu, Shi-Hi Science and Technology on Reliability Physics and Application of Electronic Component Laboratory No.110 Dongguanzhuang Rd. Tianhe District 510610 Guangzhou China Electronics Research Institute Beijing China

ISBN: (纸本)9781467316804

Microwave tubes for communication must have high reliability, high power, and a long life of 10 to 15 years. Cathode as the electric source module in microwave vacuum tubes, its reliability and life directly affect the tube's reliability and life. In this paper, electronic gun in short tubes are accelerated to evaluate the lifetime of one kind of microwave vacuum (such as traveling wave tube). In order to shorten the testing process, accelerated life-test tests method is established at higher operating temperature and currents of cathode. The highest acceleration is obtained at the cathode temperature of 1100 °Cb with the cathode current density of 1.5A/cm 2. One of the most common equations used to analyze cathode lifetimes is the Arrhenius model. Lifetimes were estimated based the time at which 50% cumulative failures had occurred using OriginPro75 software. © 2012 IEEE.

关键词： Cathodes

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