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检索条件"机构=Science and Technology Laboratory on Reliability Physics and Application of Electronic Component"

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reliability Test and Analysis for Vibration-Induced Solder Joint Failure of PBGA Assembly

Reliability Test and Analysis for Vibration-Induced Solder J...

引用

2011 12th International Conference on electronic Packaging technology & High Density Packaging(2011 电子封装技术与高密度封装国际会议)

作者： Bin Zhou Yunfei EN Xueli Qi Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CE Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CE

In order to understand the vibration characteristic of plastic BGA solder joints, the test vehicles with daisy chain were designed, vibration reliability test platform and real-time monitoring platform were developed, a series of vibration test including sweep vibration at different levels and random vibration were conducted, and the comparative study for experiments and simulation results was carried out. And the effect of void and pad type on the maximum vibration stress of solder joint was studied. The results showed the relation between deformation of test vehicle and input accelerator represented nonlinear characteristic. The failure of solder joint was occurred firstly in the PBGA which was located on the center of board due to the maximum deformation. The solder joint failure presented the character of solder joint crack, and the crack was initiated at the soldering interface close to solder joint outmost on BGA side and propagated to the internal of solder joint. It can be known that the soldering interface close to SMD pads on BGA side had higher stress concentration and poorer adhesive strength, NSMD solder pad is useful to raise the vibration reliability of solder joint, and maximum stress of solder joint have few sensitive for the changing of solder pad thickness. The phenomenon was validated in the cross-section results. The soldering voids were easy to induce the stress concentration around the voids.

关键词： Soldering Vibrations Stress reliability Fatigue Clamps

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Study of Vibration reliability Test and Simulation for High Density PBGA Assembly

Study of Vibration Reliability Test and Simulation for High ...

引用

2011 International Conference on Quality,reliability,Risk,Maintenance,and Safety Engineering(2011年质量、可靠性、风险、维修性与安全性国际会议暨第二届维修工程国际学术会议 ICQR2MSE 2011)

作者： Bin ZHOU Xueli QI Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Chi Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Chi

The PBGA assembly test samples which contain daisy chain patterns were designed;vibration reliability test platform and real-time monitoring platform called Event Detector from Analysis Tech were developed. The vibration reliability test and failure analysis were performed, and the comparative study for experiments and simulation results was carried out. The results showed that the outermost corner solder joint in the PBGA module which was far away from the fixation point was most vulnerable to vibration failure;the solder joint failure presented the characteristics of crack. The crack initiation and propagation was across the solder close to SMD pad on component side. The voids solder joint had poorer vibration fatigue life than the normal solder joint under the same level of vibration excitation. There was adverse influence of void on the vibration fatigue life of solder joint. It represented corresponding relationship between the strain of solder joint and the vibration fatigue life of solder joint. Finally, non-linear dynamic deformation behavior of the PCB assembly was validated under external vibration excitation. The results of the study could help to design new reliable surface mount electronic package based on high vibration reliability.

关键词： solder joint vibration test simulation reliability fatigue life

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Effect of substrate material on thermal reliability of high-power electronic packaging device

Effect of substrate material on thermal reliability of high-...

引用

2011 International Symposium on Advanced Packaging Materials, APM 2011

作者： Song, Fang Fang Lai, Ping Science and Technology on Reliability Physics and Application of Electronic Component Laboratory 510610 Guangzhou China China Electronic Product Reliability and Environmental Testing Research Institute No.110 Dongguanzhuang Rd. Tianhe District 510610 Guangzhou China

ISBN: (纸本)9781467301473

Thermal performance and reliability are necessary to be considered for high-power electronic packaging device design. In this paper, the thermal characteristic of one kind of packaging device was studied using FEM and experimentation, for phase shifter. The model for thermal condition of phase shifter was established. The top junction temperature obtained by simution shows tendency as tested experiment results, verifying the correctness of the simulation model and method used. The relation of relative temperature rising to different substrate thickness and material is studied by simution. The quantitative relations of these parameters and temperature provided a theoretical basis for the thermal design and reliability estimate, the optimization of parameters and the reliability improvement of phase shifter. © 2011 IEEE.

关键词： Phase shifters

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Static thermal resistance test and simulation analysis technology for hybrid microcircuit

Static thermal resistance test and simulation analysis techn...

引用

2011 International Symposium on Advanced Packaging Materials, APM 2011

作者： Zhou, Bin Qi, Xueli Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI No. 110 Dongguanzhuang Road Tianhe District Guangzhou China School of Electronic and Information Engineering South China University of Technology Guangzhou China

ISBN: (纸本)9781467301473

The miniaturization of packaging volume for hybrid microcircuit and the increasing of dissipated power for chip make its junction case thermal resistance parameters become the focus of people's study and attention. The thermal resistance sample was designed based on a new embedded copper enhance case and static measurement was used, transient temperature response curve of internal die was showed by testing, thermal resistance - heat capacity network model was obtained through numerical deconvolution, the thermal resistance of internal structures were analyzed, which was compared with the theory calculation result of 45°method, and the effect of each layer structure on overall junction case thermal resistance was analyzed. In addition, heat dissipation performance was studied by comparative analysis between new case and original cold rolled steel case. Finally, temperature distribution and junction case thermal resistance of new hybrid circuit module were studied by finite element simulation. The results showed that the thermal resistance value of new embedded copper packaging case decreased about 50% in contrast to cold rolled steel case. Decreasing overall internal resistance of microcircuit need improves the heat dissipation performance of case, meanwhile, the effect of each layer structure on whole internal thermal resistance should be decreased as much as possible. © 2011 IEEE.

关键词： Heat resistance

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Simulation of the Effect of Surface Roughness on the Mechanical Properties of a Microbeam

Simulation of the Effect of Surface Roughness on the Mechani...

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作者： Wen-Xiao FANG Qin-Wen HUANG Xin LIU Chu-Xuan QIU Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Gua Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Gua Guangdong Inspection and Quarantine Technology Center Guangzhou China

Surface flaw is harmful for the quality of microelectromechanical device, because it could affect the mechanical response of the micro structure inside. In this paper, we simulate the effect of surface roughness on the mechanical properties of a micro beam by a two-dimensional finite element analysis. The random surface is generated in one dimension by a gauss correlation function with two major parameters, root mean square (RMS) σ and correlation length λ. The effect of σ and λ on the bending deflection and eigenfrequency of a 0.5μm (height)×5μm ( length) b eam I s I nvestigated f or t he c ases o f o ne fixed end and two fixed ends, with the following results. Firstly, with a same load, the bending deflection of the microbeam increases with both RMS and correlation length, while the eigenfrequencies (the first to the sixth) of the microbeam decrease with the increase of both RMS and correlation length. In another word, the roughness of the surface softens the microbeam. Secondly, by generating numbers of microbeams with a same σ and λ, we find that the increase of the σ and λ causes the increasing instability degree of the microbeam for the bending deflection Umax and the eigenfrequencies ω in both cases. In the case of two fixed ends, a RMS of 60nm and a correlation length of 300nm lead to a Δumax/Umax=7％ instability degree of the bending, while in the case of one fixed end, they would lead to a value of Δumax/Umax=11％. In the mean time, they lead toΔω/ω=2.9％ instability degree of the first frequency in the case of two fixed ends, and Δω/ω=4.25％ in the case of one fixed end. The simulation would be helpful in the fabrication design of microelectromechanical device.

关键词： surface roughness microbeam bending deflection eigenfrequencies.

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Effect of Gate Bias on ESD Characteristics in NMOS Device

Effect of Gate Bias on ESD Characteristics in NMOS Device

引用

2011 International Symposium on Advanced Packaging Materials(2011年先进电子封装材料国际会议APM)

作者： Yu juan HE Yunfei EN Qingzhong XIAO Hongwei LUO Science and Technology on Reliability Physics and Application of Electrical Component Laboratory Gu Science and Technology on Reliability Physics and Application of Electrical Component Laboratory Gu

@@ I. Purpose Oxide trapped charges which were produced in oxide area of MOSFET in the process of using can cause ESD characteristic changed. So the gate forced given bias to Simulate oxide trapped charges. In this paper, TLP test method was used to study the ESD parameters of NMOSFET with various gate biases. It was indicated that the threshold voltage Vtl and secondary breakdown current lt2 first increased and then decreased with the gate voltage increasing, but the maintained Voltage Vsp essentially unchanged.

关键词： Logic gates Electrostatic discharges Threshold voltage MOSFET circuits Breakdown voltage Materials

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Effect of Channel Width on ESD Characteristics of SOI MOS Device

Effect of Channel Width on ESD Characteristics of SOI MOS De...

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作者： Yujuan HE Qingzhong XIAO Yunfei EN Hongwei LUO Science and Technology on Reliability Physics and Application of Electrical Component Laboratory Gua Science and Technology on Reliability Physics and Application of Electrical Component Laboratory Gua

The ESD characteristic of gate grounded NMOS device with different channel width was studied. It was indicated that the effect of channel width on threshold voltage (Vt1) and maintained voltage (Vsp) was imperceptible and the longer channel width, the larger ESD secondary breakout current (It2). This was probably related to decreased body resistance in thin silicon layer of SOI NMOSFET.

关键词： ESD protection SOI TLP test GGNMOS channel width secondary breakout current

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Life Character Analysis Methods of Storage electronic components

Life Character Analysis Methods of Storage Electronic Compon...

引用

作者： Xin LIU Wenxiao FANG CEPREI Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

Lots of military equipments are in storage, and the equipments are need to evaluate whether showing degenerate character or not，or whether meeting the requirements to use continually or not. Electric components are basic elements, and it is important to evaluate the life character in storage. In this article, the typical components, tantalum capacitor, electromagnetic relays and resistor included, are analyzed with the way of external visual inspection, key electric meters test, inner visual inspection and. 3 analysis cases show that external and inner visual inspection can find life characters of electric components, degeneration of key electric meter can be analyzed by key electric meter test. It can be analyzed effectively for life character of electric components in storage with those analysis ways.

关键词： life character analysis storage electronic components mothods

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Weld technology reliability analysis of cathode in vacuum tube

Weld technology reliability analysis of cathode in vacuum tu...

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2011 International Symposium on Advanced Packaging Materials, APM 2011

作者： Song, Fang Fang Feng, Xian-Long Li, Sha Jin Yu, Shiji Science and Technology on Reliability Physics and Application of Electronic Component Laboratory 510610 Guangzhou China China Electronic Product Reliability and Environmental Testing Research Institute 510610 Guangzhou China Institutes of Electronics No.110 Dongguanzhuang Rd. Tianhe District 510610 Guangzhou China

ISBN: (纸本)9781467301473

Influence of weld technology on reliability and life to cathode in vacuum tube was studied by requests of microwave tube. The quality of weld technology quite affects the emission capability of cathode. The mode of weld quite affects thermal efficiency of cathode in vacuum tube. Thermal efficiency of cathode can increase availably by changing the weld technology on the heat transfer path. Thermal analysis and optimization design of cathode module for vacuum tube was carried out with the FEM in order to obtain required cathode temperature with lower heat power. The weld mode quite affects the cathode heat power, for example, the cathode heat power can reduce 28.6% with 8+8 laser spot welding. We have also built the life test system of TWT's electron gun structure of 8+8 laser spot welding, using this life test system, up to 30 years life of cathode is forecasted. © 2011 IEEE.

关键词： Cathodes

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A study of junction temperature testing method in GaAs PHEMT

A study of junction temperature testing method in GaAs PHEMT

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2011 International Symposium on Advanced Packaging Materials, APM 2011

作者： Hong, Xiao Huang, Yun Li, Shajin Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou Guangdong China 5th Electronics Research Institute of the Ministry of Industry and Information Technology No.110 Dongguanzhuang Rd Guangzhou Guangdong China

ISBN: (纸本)9781467301473

With the development of the RF/microwave technology, more and more GaAs PHEMT device is used and the power of the device is also increasing. However, the test of thermal performance and heat dissipation in packaging device is still a prominent problem. In order to obtain steady operation and longer lifetime, what is the highest temperature environment the device can work? Also the package of the device is a major factor of cooling effect, so the measurement of thermal resistance must be accurate. In this paper, some methods was given to measuring of device junction temperature. Traditional test method such as infrared thermography is not work for the packaging device. A new method to measure the thermal resistance of GaAs PHEMT is given. Based on the electrical measurement method for thermal resistance and Schottky junction temperature of GaAs PHEMT and the factors which influence measuring results are investigated. In the meantime we design the setup of the test system for the measuring. The first is drawing the curve of forward voltage changes and temperature. Then the thermal resistance is measured and calculated. The error introduced by thermal resistance of GaAs PHEMT surface is eliminated. The experimental results show that the method has the advantages of simple structure and good stability. The proposed method is capable to evaluate the thermal resistance of the packaging device such as GaN device, VDMOS and so on. It is very significant to provide evaluation method in reliability test. © 2011 IEEE.

关键词： Heat resistance

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