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检索条件"机构=Science and Technology Laboratory on Reliability Physics and Application of Electronic Component"

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Vibration durability modeling and dynamic response analysis of PBGA mixed solder joints

Vibration durability modeling and dynamic response analysis ...

引用

International Conference on (ICEPT) electronic Packaging technology

作者： Bin Zhou Baojun Qiu Yunfei En CEPREI National Key Lab of Science and Technology on Reliability Physics and Application of Electronic Component China

Along with more and more use of high density plastic ball grid array (PBGA) in portable electronic products and military electronic equipments, the vibration fatigue reliability of solder joints for PBGA becomes a critical concern. In this paper, a quarter 3D symmetric model was developed by ANSYS software, then modal analysis of PCBA assembly and random vibration response analysis of mixed solder joints were implemented. The effect of fixation points on mode shape and the size parameters for solder joints on von mises stress were discussed. Finally, the influence of every step mode on the PCB bending deflection was analyzed. The results showed that the first bend mode was the main factor which influences the bend deformation of the PCB. Adopting more fixations can reduce the influence of the first mode. Solder joint with maximum von mises stress (critical solder joint) was occurred on the outmost corner of PBGA which is mounted at the position of PCB largest deformation, and the accurate critical interface was located at the soldering interface between PCB and solder ball. More deflection of PCB causes larger stress of solder joint. The further research found that the first four step natural frequencies are less than 2000Hz, and they are within the vibration frequency range of 5Hz to 2000Hz caused by the transport and application. So it is necessary to optimize the fixation design of PCB assembly. Moreover, within a certain range, the thicker of PCB vehicle can get smaller stress, while the greater height of solder ball would cause greater stress.

关键词： Soldering Vibrations Stress reliability Strain Finite element methods

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A Virtual Channel Calculation Algorithm for application Specific On-chip Networks

A Virtual Channel Calculation Algorithm for Application Spec...

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International Workshop on Intelligent Networks and Intelligent Systems (ICINIS)

作者： Li-Wei Wang National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component Ministry of Industry and Information Technology Guangzhou China

A virtual channel (VC) calculation algorithm for wormhole-switched on-chip networks is proposed. Traditionally, the virtual channels were allocated uniformly, which results in a waste of area and power. To remedy this situation, based on the queuing theory, we propose a router analytical model. Using this model, the proposed algorithm calculates the bandwidth usage at each router in the network according to the traffic characteristics of the target application, and adds VC only to the channels with the highest bandwidth usage. The simulation results show that the VC allocation result is more reasonable and higher total transmission rate can be achieved compared to the uniform VC allocation. For hotspot traffic, about 33.3% savings in buffering resources can be achieved using our algorithm, in the case of achieving similar performance levels.

关键词： Bandwidth Switches System-on-a-chip Resource management Throughput Routing IEEE Press

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Thermal stress characteristics of Cu interconnects using Air-Gap

Thermal stress characteristics of Cu interconnects using Air...

引用

International Conference on (ICEPT) electronic Packaging technology

作者： Xiao-ling Lin Tong-xian Hou Zhang Xiao-wen Ruo-he Yao Institute of Microelectronics South China University of Technology Guangzhou China Institute of Microelectronics School of Electron and Information Engineering South China University of Technology Guangzhou China National Key Laboratory of Science and Technology on Reliability Physics and Application of Electrical Component China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China National Key Laboratory of Science and Technology on Reliability Physics and Application of Electrical Component China Electronic Product Reliability Environmental Testing Research Institute Guangzhou China

Based on the elastic-plastic model, two-dimensional finite element analysis was used to analyze the Air-Gap Cu interconnects thermal stress behaviors. Firstly, the stress evolution with the Air-Gap interconnect formation process steps was studied. Then, two Air-Gap types of Cu interconnects, with Air-Gap in the metal line level or extending to via level, combined with three different dielectrics were modeled to evaluate their stress characteristics. The research result is helpful to understand the influence of the dielectric and Air-Gap structure on the Cu interconnects reliability.

关键词： Stress Air gaps Copper Dielectrics Atmospheric modeling Plastics Strain

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Impact of temperature cycling on copper interconnect

Impact of temperature cycling on copper interconnect

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International Conference on (ICEPT) electronic Packaging technology

作者： Xiao-ling Lin Tong-xian Hou Zhang Xiao-wen Ruo-he Yao Institute of Microelectronics School of Electron and Information Engineering South China University of Technology Guangzhou China National Key Laboratory of Science and Technology on Reliability Physics and Application of Electrical Component China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

Temperature cycling is widely used as a qualification test in the microelectronic industry. This paper investigates an intriguing failure mode observed in such a test. FIB cross-section of test structure and SEM observation were performed for in-situ morphology analysis before and after temperature cycling. It was found that copper films surface morphology damaged substantially. Extrusions and voids were found in these films. Then, a two-dimensional finite element analysis was used to analyze the stress distribution in the test structure, taking into account the thermo-mechanical confinement effect after temperature cycling. Finally, the concept of ratcheting was used to explain fatigue phenomenon of Cu line structures.

关键词： Films Stress Copper Strain Plastics Mathematical model

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Analysis of application Status about Microwave Devices

Analysis of Application Status about Microwave Devices

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2010 11th International Conference on electronic Packaging technology & High Density Packaging(2010 电子封装技术与高密度封装国际会议)

作者： Ping Li Xiao-Ying Cui Ping Lai The Fifth Research Institute of MIIT National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component Dong Guang Zhuang Road Number 110Tian He DistrictGuang ZhouGuang DongChina

The analysis of failure status on microwave devices in recent years have been analysed in this paper. Statistic distribution of sort and the main failure mechanisms on microwave devices in application have been obtain... 详细信息

关键词： Microwave devices Electromagnetic heating Microwave circuits reliability Microwave FET integrated circuits Microwave integrated circuits

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Focused Ion Beam technology and application in Failure Analysis

Focused Ion Beam Technology and Application in Failure Analy...

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2010 11th International Conference on electronic Packaging technology & High Density Packaging(2010 电子封装技术与高密度封装国际会议)

作者： Yuan Chen Xiaowen Zhang National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic component The Fifth Electronics Research Institute of Ministry of Industry and Information Technology No.110 Dongguanzhuang Road Tianhe District Guangzhou Guangdong P.R. China

Focused ion beam, also known as FIB, is a technique widely used in semiconductor field, such as circuit modification, layout verification, microcircuit failure analysis, mask repair and transmission electron microscope (TEM) specimen preparation of site specific locations. Among these applications, microcircuit failure analysis is a very important one. In the paper, after an introduction to the FIB technology and the operating principles, several applications of FIB for microcircuit failure analysis were described and discussed. First, Using FIB system milling for cross-section enable the engineer to review and verify the defect of specific locations. Secondly, FIB systems could be used to remove of the local passivation layer to expose underlying metal lines for mechanical or electron beam probing, emission microscopy, or liquid crystal analysis. Thirdly, local circuit test for defect localization sometimes need FIB system to form probe pads or cut metallization and polysilicon lines to isolate interconnections. Finally, locating shorts and opens in circuitry by utilizing passive voltage contrast (PVC) in FIB system is also a common usage in IC failure analysis. Furthermore, two successful cases for FIB technique analyzing failed integrated circuits were described. Case 1: gold aluminum bonding failure. The connection resistance of Vdd pin of the sample was increasing. With the function of FIB precise micro-cutting, the cross-section of the gold aluminum bonding area was performed and analyzed. The cross-section view showed that gold diffused to aluminum. Combining with EDS analysis, the bonding failure mechanism was attributed to Kirkendall effect. Case 2: dielectric breakdown. The failed sample was a dual 8-bit monolithic analog-to-digital converter. Dielectric breakdown usually occurs between multi-layer metal. First, using passive voltage contrast in FIB, short failure was easily detected by contrast between contacted and non-contacted interconnects. Then cross

关键词： Failure analysis Ion beams Bonding Gold Aluminum Dielectric breakdown

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Effects of Combining Hygro-Thermal Stress on reliability of Plastic QFN Package

Effects of Combining Hygro-Thermal Stress on Reliability of ...

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2010 11th International Conference on electronic Packaging technology & High Density Packaging(2010 电子封装技术与高密度封装国际会议)

作者： Hailong Liu Shaohua Yang Guoyuan Li School of Electronic and Information Engineering South China University of Technology Guangzhou 51 National Key Laboratory of Science and Technology on Reliability Physics and Application of Electron School of Electronic and Information Engineering South China University of Technology Guangzhou 51

In this paper, finite element analysis (FEA) was used to evaluate the stress distribution on quad flat no-lead (QFN) packages. Different models were established, including moisture diffusion, thermo-mechanical stress, hygromechanical stress and hygro-thermo-mechanical stress models. The transient moisture absorption and desorption analysis were performed to estimate the package moisture distribution. A variety of experimental works were designed to study the hygro-thermal stress on the interface of die/mold compound and die attachment delaminaion. After the moisture preconditioning under 85℃/85％RH, it is found that the external mold compound (MC) material of package is almost fully saturated. The differential swelling that occurs between the mold compound and nonpolymeric materials leads to hygroscopic mismatch stresses in the package. The FEA results revealed that there is a significant contribution of hygroscopic swelling induced stress and an obvious effect of hygro-thermo-mechanical stress on package reliability. The experimental results also show that the hygro-thermomechanical stress under lead free reflow temperature produce considerable influence to the package integrity after moisture precondition.

关键词： Moisture Stress Materials reliability Delamination Thermomechanical processes Mathematical model

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reliability of Package on Package (PoP) Subjected to Thermal and Power Loadings

Reliability of Package on Package (PoP) Subjected to Thermal...

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2010 11th International Conference on electronic Packaging technology & High Density Packaging(2010 电子封装技术与高密度封装国际会议)

作者： Jun Cheng Yudong Lu Guoyuan Li School of Electronic and Information Engineering South China University of Technology Guangzhou 51 National Key Laboratory of Science and Technology on Reliability Physics and Application of Electron School of Electronic and Information Engineering South China University of Technology Guangzhou 51

Traditional thermal loading test neglects the influence of power applied to PoP. To address this challenge, board level reliability of PoP subjected coupled thermal and power loadings were investigated in this study. In order to provide the coupled thermal and power loadings, high temperature storage (HTS) and constant current source were chosen for the accelerated test. Five test conditions (0A, 0.5A, 0.75A, 1.0A, 1.5A at 120℃) were adopted to evaluate the board level reliability of PoP. Experiment results revealed that the thermal and especially the power loadings had critical impact on the resistance of solder joints of PoP. The larger the current applied, the more the voids produced. Most of the voids were located on the inner ring of the bottom package. Besides, when solder joints suffered a large current, the generated Joule heat could melt down the solder balls in a short time. Current applied to PoP should be carefully considered and the critical spots located on the inner ring of the bottom package need to be specially tackled to improve the reliability of PoP.

关键词： Loading Thermal loading reliability Soldering Vehicles electronic packaging thermal management Resistance

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Failure mechanism of Sn3.0Ag0.5Cu flip-chip solder joints under electric current stress

Failure mechanism of Sn3.0Ag0.5Cu flip-chip solder joints un...

引用

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009

作者： Lu, Yu-Dong He, Xiao-Qi En, Yun-Fei Wang, Xin China Electronic Product Reliability and Environmental Test Research Institute P.O.Box 1501-05 Guangzhou 510610 China 5th Electronics Research Institute Ministry of Information Industry National Key Laboratory for Reliability Physics and Its Application Guangzhou 510610 China Key Laboratory of Specially Functional Materials College of Materials Science and Engineering South China University of Technology Guangzhou 510640 China

ISBN: (纸本)9781424439102

Electromigration in flip-chip bumps of Sn3.0AgO.5Cu, has been studied at current density of 2.03l04 A/cm2• Three, potential failure modes induced by electromigration in SnAgCu, flip-chip bumps were investigated in terms of microstructural, evolution. According to IPC standard or U.S. Military Standard, (MIL-STD), all theses three kinds of damages would be determined, failure in failure-analysis procedures for microcircuits © 2009 IEEE.

关键词： Electromigration

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Failure modes of Sn3.0Ag0.5Cu flip-chip solder joints under current stress

Failure modes of Sn3.0Ag0.5Cu flip-chip solder joints under ...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Yu-Dong Lu Xiao-Qi He Yun-Fei En Xin Wang Key Laboratory of Specially Functional Materials College of Materials Science and Engineering South China University of Technology Guangzhou China National Key Laboratory of Reliability Physics and Its Application Technology of Electrical Component Electronics Research Institute Guangzhou China

Electromigration in flip chip solder joints of Sn3.0Ag0.5Cu has been studied at current density of 2.03times104 A/cm2 and the bump temperature was at 120 degC. Three potential failure modes were absolved and their corresponding microstructural mechanism was discussed in this paper. The pancake-type void is noticeable failure mode and dominated by current crowding. The continuous void at the cathode of contact interface between IMC and solder was also formed without current crowding. But the void has less area than the void at entire cathode contact interface to the Si Chip. The large area of IMC in left-hand section of solder joints distributed in solder joint uniquely. All of the unique microstructural evolution induced by electromigration concern the migration of atoms and vacancies in interconnects with unique geometry.

关键词： Flip chip solder joints Stress Electromigration Soldering Materials science and technology Flip chip Industrial electronics electronics industry Cathodes Joining materials

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