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6th International Conference on electronics technology, ICET 2023

作者： Zhang, Zhuo Zhang, Ting-Yang Huang, Qin-Wen Yang, Shao-Hua Zhang, Xiao-Sheng Tu, Cheng University of Electronic Science and Technology of China School of Electronic Science and Engineering Chengdu China Sci. and Technol. on Reliability Phys. and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (纸本)9798350337693

This work presents a 4.9 GHz A1 -mode Lamb wave resonator (LWR) based on partially released Z-cut lithium niobate (LN) thin film, which is aimed at application of 5G communication in N79 band. The designed LWR utilizes the horizontal electric field for efficient excitation of first-order antisymmetric (A1) mode in the acoustic cavity made of LN film. The fabrication process for the designed LWR is described and validated. The measured results show that the partially released devices achieve large electromechanical coupling coefficient (kt2=27%), which is comparable to that of reported fully released devices. The measured results are in good agreement with the finite element (FE) simulations. The presented partially released LWRs show prospect to improve the mechanical robustness of such devices without much sacrifice to performance. © 2023 IEEE.

关键词： Surface waves

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Study on the effect of self-heating effect of bulk acoustic wave filter on the interpolation loss in the band

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International Journal of Nanomanufacturing 2023年第3-4期18卷 178-188页

作者： Ruan, Bin Liu, Tingting Yang, Shaohua Huang, Qinwen Wu, Ming Shao, Weiheng School of Information Engineering Southwest University of Science and Technology No. 59 Qinglong Road Sichuan Province Mianyang621010 China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability Environmental Testing Research Institute Guangdong Province Guangzhou510610 China Pandhus Microsystem Co. Ltd. Innovation Centre Phase 2 Room 301 Building 3 Science and Technology Business Park Sichuan Mianyang China

The self-heating effect occurs when the bulk acoustic wave filter is loaded with power, leading to the deterioration of the insertion loss. In this paper, the self-heating effect of bulk acoustic wave filters at high frequency power is investigated. A test system is built to obtain the maximum surface temperature and the insertion loss of the bulk acoustic wave filter at different power levels. The test results show that the self-heating effect causes the internal temperature of the bulk acoustic wave filter to increase further after increasing the power, resulting in the increase of the insertion loss. The test system and analysis method in this paper verify the relationship between the self-heating effect and the insertion loss, and can provide guidance for the construction of the relevant reliability test system of the bulk acoustic wave filter. Copyright © The Author(s) 2023. Published by Inderscience Publishers Ltd.

关键词： Deterioration

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A novel learning approach to MIMO networked control systems with uncertain parameters 14

A novel learning approach to MIMO networked control systems ...

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14th IEEE Global reliability and Prognostics and Health Management Conference, PHM-Hangzhou 2023

作者： Jia, Hanguang School of Automation Science and Engineering South China University of Technology National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou China

ISBN: (纸本)9798350301359

This paper proposes a new learning approach to solve control design problems involving uncertain parameters in MEMO networked control systems. This approach combines neural network technology with control system modeling in real-time through learning and adaptation of data, thereby achieving stability and optimization of network-based control systems. The authors first establish a network-based control model and then improve it by replacing the linear parameters with nonlinear ones. To ensure real-time and stable communication between devices, this method also uses adaptive iterative learning control (AILC) technology and error feedback control technology. A network-based control system is used to verify the effectiveness of the proposed approach. The results show that this approach is effective in achieving sufficient communication between devices, adapting to uncertain parameters, and improving control performance. © 2023 IEEE.

关键词： AILC communication error feedback control MIMO networked control systems uncertain parameters

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Investigation on the Degradation Mechanism of AlGaN/GaN HEMTs under the Effect of Microwave Pulses at Different Powers 14

Investigation on the Degradation Mechanism of AlGaN/GaN HEMT...

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14th IEEE Global reliability and Prognostics and Health Management Conference, PHM-Hangzhou 2023

作者： Yang, Fanfeng Liao, Min Zeng, Binjian Yang, Peiliang Chen, Yiqiang College of Materials Science and Engineering Xiangtan University Xiangtan China The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9798350301359

We have investigated the effect of microwave pulse stress of different powers on AlGaN/GaN HEMTs. The dc characteristics of the devices were first scrutinized. The results indicate that the electrical characteristics of the devices are degraded after stress. The saturation drain-source current decreases from 681.8 mA to 246.5 mA, a decrease of 63.8 %, at the power 40 dBm. And at the power 45 dBm, the saturation drain-source current drops even more, from 662.3 mA to 176.7 mA, a drop of 73.3 %. The stress results in significant positive drift of threshold voltage and decrease of gate leakage current. And the degradation is more obvious with increasing microwave pulses power. Then, the internal defects of the device are characterized by low-frequency noise method, and the mechanism of device degradation is discussed. At the power of 45 dBm, the internal defect density of the device doubles, resulting in more electrons being captured at the channel. This is useful for the reliability level of future devices and practical applications. © 2023 IEEE.

关键词： AlGaN/GaN HEMTs degradation low-frequency noise microwave pulses power

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Vias electromigration lifetime reliability evaluation by using focus ion beam method 24

Vias electromigration lifetime reliability evaluation by usi...

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24th electronics Packaging technology Conference, EPTC 2022

作者： Wen, Zhang Xiao Ling, Lin Xiao Dai, Zongbei Rui, Gao Science and Technology on Reliability Physics and Application of Electronic Component Laboratory 78 west of ZhuCun Avenue ZengCheng district Guangzhou511370 China

ISBN: (纸本)9798350398854

The FIB (Focus Ion Beam) Construction analysis is widely used in FA field, such as evaluating process limitations, debugging, and root cause demonstration. In this paper, we describe the reliability check method of the via by using FIB. Based on the electromigration (EM) test of the vias, the reliability check method of the vias is studied through the influence of void area ratio in the via on the EM lifetime of the via. The results showed that under different operating conditions, the same void area ratio has almost the same influence on the EM lifetime, and with the increase of void area ratio in the via, the EM lifetime of the via decreases, when the lifetime decreases by 20%, the corresponding void area ratio is about 12%, which can be used as the check criteria of the via. © 2022 IEEE.

关键词： Electromigration

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Determination of blind elements of InGaAs short-wave infrared focal plane detector with high effective pixel rate for low-orbit satellite communication based on dark signal voltage change rate and sliding window detection

Determination of blind elements of InGaAs short-wave infrare...

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2023 Advanced Fiber Laser Conference, AFL 2023

作者： Liu, Yuebo Wang, Meng Luo, Xi Wang, Hongyue Lai, Canxiong Yang, Shaohua Lu, Guoguang Ma, Teng Reliability Physics and Application Technology of Electronic Component Key Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou511370 China Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou Institute of Technology Xidian University Guangzhou510555 China State Key Laboratory of High-Power Semiconductor Lasers Changchun University of Science and Technology Changchun130022 China

ISBN: (纸本)9781510677661

The effective pixel rate is a key performance parameter of infrared focal plane detectors and is also a key parameter for assessing the reliability degradation trend of the device. The application scenario of InGaAs short wavelength infrared focal plane detectors for interstellar alignment is different from that of conventional imaging detectors, where the signal values of each pixel of the focal plane are mainly used to determine the position of the laser bright spot, rather than the gray values used to generate the image. From the point of view of blind element evaluation, for the low-orbit satellite communications application scenario, the rate of change of the response values of the image elements in each local region of the InGaAs short-wave infrared focal plane detector for interplanetary alignment with optical flux has a greater impact on the performance of the device than the absolute response values of the image elements. In order to adapt to this evaluation requirement, this work designs a sliding window blind element determination method based on the rate of change of the dark signal voltage for the intrinsic characteristics of the detector, which utilizes the principle of equivalence of the effects of luminous flux and integration time on the detector signal voltage value, which is more adaptable to the practical application scenarios of interstellar-aligned shortwave infrared focal plane detectors, and the entire focal plane is divided into a number of localized regions, and the sliding detection window is used for blind element determination, which avoids the fully aligned shortwave infrared focal plane detector. Blind meta-judgment, which avoids the phenomenon of misjudgment that often occurs in global judgment. This blind judgment method is also of great importance for the reliability evaluation of InGaAs shortwave infrared focal plane detectors with high effective pixel rate for interstellar alignment. © COPYRIGHT SPIE. Downloading of the abstract i

关键词： Orbits

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A New Five-layer Differential Magnetic-Field Probe With High Sensitivity

A New Five-layer Differential Magnetic-Field Probe With High...

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IEEE International Wireless Symposium (IWS)

作者： Yuan Chi Lei Wang Guoguang Lu Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute GuangZhou China

ISBN: (数字)9798350389999

ISBN: (纸本)9798350390001

This work introduces a novel differential magnetic-field probe that incorporates parasitic elements. The probe features a pair of shorted differential loops as the parasitic components, which significantly boost detection sensitivity due to the expanded detection area. The construction of the proposed probe includes a U-shaped loop with dual outputs serving as the primary element, supplemented by a pair of shorted differential loops acting as parasitic elements, a set of shorted vias, a set of connected vias, and numerous shielded vias. First, the usual single-loop probe is applied to measure the electric and magnetic field components at the same time. Subsequently, a pair of shorted loops are integrated into the differential single-loop probe to function as parasitic elements, thereby increasing the reception of magnetic flux. To demonstrate the design rationality, the correspondingly simulated results are given in this work. Ultimately, the probe with integrated parasitic elements is crafted, printed, and assessed. The simulation results indicate that the developed probe exhibits high detection sensitivity.

关键词： Wireless communication Magnetic flux Wireless sensor networks Sensitivity Simulation Magnetic noise Feature extraction Magnetic fields Probes Magnetic shielding

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Logo Detection of Integrated Circuit Based on CycleGAN Method and Improved YOLO-v4-tiny Model

Logo Detection of Integrated Circuit Based on CycleGAN Metho...

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International Conference on (ICEPT) electronic Packaging technology

作者： Yue Zhao Zhizhe Wang Jun Luo Qiuzhen Zhang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

Focusing on the application requirements for precise detection of Integrated Circuit (IC) logos, and aiming at the problems of difficulty in obtaining database samples, uneven sample sizes, and low detection accuracy, a logo detection of IC Based on cycle-GAN method and improved YOLO-v4-tiny model is proposed. This article uses the cycle-GAN method to amplify small sample images in the IC logo image dataset. Next, the Coordinate Attention (CA) attention mechanism is embedded in the YOLO-v4-tiny model to improve the accuracy of feature representation in lightweight networks, thereby improving detection accuracy. The experimental results show that the cycle-GAN data augmentation method can effectively expand the dataset, and it has been validated on commonly used networks that the enhanced dataset can effectively improve the accuracy of integrated circuit logo detection. In addition, the improved YOLO-v4-tiny model achieved a mAP index of 98.17% on the augmented dataset, which can meet the accuracy index of the integrated circuit logo detection system and reduce the computational resources required for deployment.

关键词： Accuracy Attention mechanisms Databases Computational modeling Focusing Object detection Data augmentation

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Evaluation of p-GaN HEMTs degradation under high temperatures forward and reverse gate bias stress 2

Evaluation of p-GaN HEMTs degradation under high temperature...

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2023 2nd International Symposium on Semiconductor and electronic technology

作者： Jiang, Kun Deng, Jing Ni, Yiqiang Liu, Jun Liu, Xin He, Zhiyuan He, Liang School of Electrical Engineering University of South China Hunan Province Hengyang421001 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangdong Province Guangzhou510610 China

In this study, the degradation behavior and physical mechanism of the p-GaN HEMT devices under high-temperature gate bias (HTGB) with +5 V and -5 V were investigated. The DC characteristics show that the device after forward HTGB stress exhibits an obvious negative threshold voltage (Vth) shift, while the device after reverse HTGB exhibits a negligible shift. The following explanations could be given for the deterioration mechanism: a portion of the two-dimensional hole gas (2DHG) accumulated in the p-GaN layer at the p-GaN/AlGaN interface under long-term forward bias may fill the trap in the AlGaN layer through the tunneling effect. In addition, the drain-source on-resistance of the device had increased after +5 V HTGB stress, and a distinct decrease of accumulated capacitance was observed in the Cg-Vg curve. It indicates a degradation of the gate quality of the device after applying a forward-biased HTGB stress. © 2023 Institute of physics Publishing. All rights reserved.

关键词： Aluminum gallium nitride

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Analysis of Power Cycle Aging Test for SiC MOSFET 14

Analysis of Power Cycle Aging Test for SiC MOSFET

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14th IEEE Global reliability and Prognostics and Health Management Conference, PHM-Hangzhou 2023

作者： Zheng, Zhouyou Meng, Linghui Li, Xin Ruan, Bin Cui, Haotian School of Electrical and Information Engineering Anhui University of Science and Technology Anhui Huainan China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guang dong Guang zhou China School of Information Engineering Southwest University of Science and Technology Mianyang China

ISBN: (纸本)9798350301359

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are gradually replacing silicon (Si)based devices as the core devices for power conversion in high-temperature, high-pressure, and high-frequency applications due to their superior material properties. The long-term reliability of SiC MOSFETs has become a research focus. Power cycling tests, an important aging test for evaluating device reliability, can reflect the reliability under real working conditions to some extent. The test is conducted using a constant on/off time mode, and the on-state resistance and body diode voltage drop of the devices are measured online during the aging test. The experimental results show that an increase in on-state resistance during power cycling tests causes an increase in junction temperature, which leads to wire bond aging and eventually results in SiC MOSFET failure. © 2023 IEEE.

关键词： failure mechanism junction temperature measurement power cycling test SiC MOSFET

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