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International Conference on Radiation Effects of electronic Devices (ICREED)

作者： Chao Peng Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

Radiation-induced degradations of SiC power JBS diodes and MOSFETs are investigated by 181 Ta ion irradiation. The failure mode characteristics and failure mechanism of SiC devices are studied through failure analysi...

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An Artificial Intelligence Near-Field Probe Calibration Method Based on Generative Adversarial Network

An Artificial Intelligence Near-Field Probe Calibration Meth...

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IEEE International Wireless Symposium (IWS)

作者： Shan Xue Yangyang Zhou Jiong Tang Yu Liu Weiheng Shao Duo-Long Wu Xinxin Tian Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China School of Physics and Optoelectronic Engineering Guangdong University of Technology Guangzhou China

ISBN: (数字)9798350389999

ISBN: (纸本)9798350390001

The near field scanning method specified in the international standard IEC-61967 is an important international diagnostic method for detecting electromagnetic compatibility problems. The near-field probe, as an important part of near-field scanning, mainly detects the magnetic field or electric field. The measurement accuracy of the near field probe directly affects the measurement accuracy of the electromagnetic field on the surface of the device, affecting the accuracy of electromagnetic compatibility diagnostics. To ensure measurement accuracy, it is essential to carry out near-field probe calibration. In this work, we proposed an artificial intelligence probe calibration method based on the generative adversarial networks, which helps improve the difference of calibration parts’ quality difference measurement field and eliminate the unnecessary influence field on the probe performance. Based on the proposed method, we effectively calibrate two kinds of electric field probes, which overcomes the problem of the difference of calibration parts’ quality difference measurement field, and eliminate the influence of unnecessary field to the probe performance.

关键词： Wireless communication Magnetic field measurement Accuracy Electric variables measurement Generative adversarial networks Electromagnetic compatibility Calibration Probes Electric fields Artificial intelligence

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Experimental Evaluation of Dynamic On-resistance and Switching Performance of Cascode GaN HEMTs 14

Experimental Evaluation of Dynamic On-resistance and Switchi...

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14th International Conference on reliability, Maintainability and Safety, ICRMS 2023

作者： Li, Yao He, Xuan He, Liang He, Zhiyuan Ni, Yiqiang Han, Xiaobiao Liu, Jun Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits School of Electronics and Information Engineering Anhui University Hefei China School of Electrical Engineering University of South China Hengyang China

ISBN: (纸本)9798350329988

The dynamic on-resistance degradation and switching performance of a commercial 6S0 V cascode GaN power device are evaluated. A double-pulse test platform is used to investigate the dynamic on-resistance behaviors with various off-state drain bias voltages, drain currents, and off-state stress times under hard-switching conditions. To evaluate switching performance, an Si-based metal-oxide-semiconductor field-effect transistor (MOSFET) is used as a reference for comparing dynamic on-resistance and switching energy loss with cascode GaN high-electron-mobility transistors (HEMT). The test results indicate that higher off-state drain bias and drain current lead to more severe dynamic on-resistance degradation. Moreover, with a higher switching speed, the cascode GaN HEMT demonstrates a reduced switching energy loss compared to that of the Si-based MOSFET. © 2023 IEEE.

关键词： Gallium nitride

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Degradation Analysis of Double Trench-Gate SiC MOSFETs Under Single Surge Current Stress

Degradation Analysis of Double Trench-Gate SiC MOSFETs Under...

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International Conference on (ICEPT) electronic Packaging technology

作者： Mowen Zhang Qijun Wen Liang He Dezhi Ma Shuanzhu Fang Zhizheng Wang Zhiyuan He Jia-Yue Yang Yiqiang Chen Reliability Physics and Application of Electronic Component Laboratory School of Energy and Power Engineering Shandong University Science and Technology Jinan China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China School of Integrated Circuits Guangdong University of Technology Guangzhou China School of Energy and Power Engineering Shandong University Jinan China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

In this work, the degradation processes and mechanisms of commercial double trench gate SiC MOSFETs under single surge current (SSC) stresses are delved into. Based on comprehensive characterizations on device parameters before/after SSC stresses, we elucidate degradation behaviors exhibited by these MOSFETs. Notably, when SSC reaches the maximum value, the stability of the threshold voltage (Vth) and on-state resistance ( $R$ ds,on ) suggests that the gate oxide for these MOSFETs is not obviously influenced by SSC stresses. Additionally, scanning acoustic microscopy (SAM) analysis confirm the reliability of package. Through directly measuring the I-V characteristics of the body diode, the damage to body diode is identified as the primary cause of device failure, resulting the increase of the drain leakage current (Idss) and the loss in blocking capability. This work contributes usefully to the refinement of surge reliability assessment for SiC MOSFETs.

关键词： Degradation MOSFET Silicon carbide Current measurement Logic gates Loss measurement Threshold voltage

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Degradation Evaluation of Neutron Irradiation Effect on AlGaN/GaN Metal-Insulator- Semiconductor High Electron Mobility Transistors

Degradation Evaluation of Neutron Irradiation Effect on AlGa...

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International Conference on (ICEPT) electronic Packaging technology

作者： Xiaoyue Duan Pinbo Li Liang He Yijun Shi Xinghuan Chen Yiqiang Ni Jun Liu Zhiyuan He Yiqiang Chen Physics and Application of Electronic Component Laboratory School of Electrical Engineering University of South China Science and Technology on Reliability Hengyang China Physics and Application of Electronic Component Laboratory Science and Technology on Reliability Guangzhou China School of Electrical Engineering University of South China Hengyang China School of Integrated Circuits Guangdong University of Technology Guangzhou China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

We investigate the degradation effects of neutron irradiation on AIGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) in this work. The performance of the devices is characterized through relevant electrical current-voltage (I-V) test and capacitance- voltage (C-V) test. The result indicates that the electrical parameter of the device degrades after neutron irradiation, such as positive shift of threshold voltage, reduction in output drain current, and the increase of the on-resistance. Additionally, combining with the frequency-dependent conductance method, it displays that shallow energy level- interface states at the AIGaN/GaN heterojunction increase, along with slightly shifting to deeper energy level after neutron irradiation. Neutron irradiation introduces more interface states and increase the scattering which degrading the carrier concentration and mobility, causing related degradation on electrical performances. This study provides useful reference value for the application of GaN-based devices in the aerospace.

关键词： Degradation Performance evaluation Radiation effects Electron traps Neutrons Energy states Threshold voltage

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A New Probe with High Sensitivity and Dual components Measurement

A New Probe with High Sensitivity and Dual Components Measur...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Lei Wang Rong Zhou Hongyue Wang Zhangming Zhu Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Electronic Product Reliability and Environmental Testing Research Institute GuangZhou China School of Microelectronics Xidian University Xi'an Shaanxi China

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

A new electromagnetic probe with dual electromagnetic field components measurement and high detection sensitivity is presented in this work. It is well known that a traditional If-shaped loop probe is often utilized to simultaneously test two electric- and magnetic-field components. However, the If-shaped loop has an obvious drawback, which is that the electric-field sensitivity is much lower than the magnetic-field sensitivity. For the purpose of increasing the electric-field sensitivity, a pair of long strips is inserted into the V-shaped loop to increase the electric-field sensitivity in the presented probe. Moreover, some vias fences are used to prevent the undesired electromagnetic modes. For the purpose of verifying the outstanding feature of the probe, a simulated model is given and simulated on a four-layers PCB, and characterized by a standard microstrip line. By combining the long strips and If-shaped loop, the presented probe not only could measure two electric- and magnetic-field components at the same time, but also has a higher detection sensitivity, which could improve measurement accuracy and save measurement time.

关键词： Microwave measurement Strips Sensitivity Magnetic field measurement Millimeter wave measurements Electric variables measurement Time measurement

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Effect of the Off State/Half-On State/On State Electrical Stresses on the reliability of Packaged D-Mode GaN/AlGaN HEMTs

Effect of the Off State/Half-On State/On State Electrical St...

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International Conference on (ICEPT) electronic Packaging technology

作者： Dongsheng Zhao Lijuan Wu Yijun Shi Qingzong Xiao Guoguang Lu Zhiyuan He Liang He Zigui Tu Jie Yuan School of Physical and Electronic Changsha University of Science and Technology Changsha China Application of Electronic Component Laboratory CEPREI The Science and Technology on Reliability Physics Guangzhou China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

In this study, different typical electrical stresses (ES) were applied to the depletion mode GaN/AlGaN high electron mobility transistors (HEMTs) to simulate the application scenarios in real production and life. By applying three kinds of typical electrical stress, we observed the device static obvious changes in the electrical parameters are as follows: (1) Compared with the original device, the threshold voltage VTH of the device has obvious left drift, and the transconductance and Rds,on decrease under the Off State electrical stress; (2) Under the Half-On State/On State electrical stress, the threshold voltage of the device is positively skewed, the on-resistance Rds,on increases, and the saturation leakage current Idsat decreases significantly. The experiments reveal the dependence of threshold voltage (VTH), peak transconductance (Gmmax) and saturation leakage current (Idsat) on different stress modes, which provides an intentional reference for the quality and reliability of subsequent GaN/AlGaN HEMTs practical production applications.

关键词： Degradation Charge carriers Production HEMTs Threshold voltage Leakage currents MODFETs

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Templated synthesis of patterned gold nanoparticle assemblies for highly sensitive and reliable SERS substrates

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Nano Research 2023年第4期16卷 5056-5064页

作者： Jianping Peng Peijiang Liu Yutong Chen Zi-Hao Guo Yanhui Liu Kan Yue South China Advanced Institute for Soft Matter Science and Technology School of Emergent Soft MatterSouth China University of TechnologyGuangzhou 510640China National Key Laboratory for Reliability Physics and Its Application Technology of Electrical Component the 5th Electronics Research Institute of the Ministry of Information IndustryGuangzhou 510610China College of Textiles&Clothing Laboratory of New Fiber Materials and Modern TextileState Key laboratory of Bio-Fibers and Eco-TextilesQingdao UniversityQingdao 266000China

Formation of plasmonic structure in closely packed assemblies of metallic nanoparticles(NPs)is essential for various applications in sensing,renewable energy,authentication,catalysis,and ***,a surface-enhanced Raman scattering(SERS)substrate is fabricated for trace detection with ultrahigh sensitivity and *** SERS substrate is constructed from a simple yet robust strategy through in situ growth patterned assemblies of Au NPs based on a polymer brush templated synthesis *** from the dense and uniform distribution of Au NPs,the resulting Au plasmonic nanostructure demonstrates a very strong SERS effect,while the outer polymer brush could restrict the excessive growth of Au NPs and the patterned design could achieve uniform distribution of Au *** results,an ultra-low limit of detection(LOD)of 10^(−15)M,which has never been successfully detected in other work,is determined for 4-acetamidothiophenol(4-AMTP)molecules and the Raman signals in the random region show good signal homogeneity with a low relative standard deviation(RSD)of 7.2%,indicating great sensitivity and reliability as a SERS *** LOD values of such Au plasmonic nanostructures for methylene blue,thiram,and R6G molecules can also reach as low as 10^(−10)M,further indicating that the substrate has a wide range of applicability for SERS *** the help of finite difference time domain simulations(FDTD)calculation,the electric field distribution of the Au plasmonic nanostructures is simulated,which quantitatively matches the experimental ***,the Au plasmonic nanostructures show good shelf stability for at least 10 months of storage in an ambient environment,indicating potentials for practical applications.

关键词： templated synthesis patterned Au nanostructures surface-enhanced Raman scattering polymer brush plasmonic nanostructures

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Fault Prediction of DC-DC Devices Based on Deep Belief Network

Fault Prediction of DC-DC Devices Based on Deep Belief Netwo...

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International Conference on Sensing, Diagnostics, Prognostics, and Control (SDPC)

作者： Pengfei Yu Jiao Wang Junliang Wan Qiang-ming Cai Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component Guangzhou China China Electronic Products Reliability and Environmental Test Institute Guangzhou China School of Information Engineering Southwest University of Science and Technology Mianyang China

ISBN: (数字)9798350388855

ISBN: (纸本)9798350388862

Fault prediction is an important research field for power supply status management. Choosing an appropriate algorithm has a significant impact on the effectiveness of prediction. This article uses Deep Belief Network (DBN) to predict the device efficiency degradation of an isolated flyback DC-DC converter. Deep Belief Network (DBN) can be seen as a stack of a series of Restricted Boltzmann Machines (RBMs). The final prediction error (RMSE) is 0.00039. The results indicate that DBN has a relatively small error in predicting device efficiency degradation in DC-DC devices. The advantage of DBN is that DBN can perform fault prediction on complex power systems without establishing a physical model. It is convenient to research fault prediction only based on mathematical models.

关键词： Degradation Performance evaluation Deep learning Accuracy Power supplies DC-DC power converters Predictive models Prediction algorithms Mathematical models Sensors

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Research on Phase Consistency of Optical Fiber Delay Module 3

Research on Phase Consistency of Optical Fiber Delay Module

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3rd International Conference on System reliability and Safety Engineering, SRSE 2021

作者： Liao, Wenyuan Li, Shuwang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (纸本)9781665401609

The optical fiber delay module is mainly used in the optically controlled phased array radar system, which plays a core role in the whole system. Among them, the measurement accuracy of the optical fiber delay and the optical fiber length are key technologies to realize the phase consistency of the module. In this paper, the phase error source and phase consistency control method of optical fiber delay module are analyzed. Further, the high precision phase testing technology and reliability test of optical fiber delay module are carried out. It can be concluded that the combination of fiber fusion taper and optical phase shift can significantly improve the phase accuracy. Meanwhile, the phase consistency of each channel of the fiber delay module is very excellent before and after the test. © 2021 IEEE.

关键词： Optical fibers

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