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Proton induced radiation effect of SiC MOSFET under different bias

Chinese Physics B 2023年第10期32卷 708-715页

作者：张鸿郭红霞雷志锋彭超马武英王迪孙常皓张凤祁张战刚杨业吕伟王忠明钟向丽欧阳晓平 School of Material Science and Engineering Xiangtan UniversityXiangtan 411105China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Electronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510610China Northwest Institute of Nuclear Technology Xi'an 710024China

Radiation effects of silicon carbide metal–oxide–semiconductor field-effect transistors(SiC MOSFETs)induced by 20 MeV proton under drain bias(V_(D)=800 V,V_(G)=0 V),gate bias(V_(D)=0 V,V_(G)=10 V),turn-on bias(V_(D)=0.5 V,V_(G)=4 V)and static bias(V_(D)=0 V,V_(G)=0 V)are *** drain current of SiC MOSFET under turn-on bias increases linearly with the increase of proton fluence during the proton *** the cumulative proton fluence reaches 2×10^(11)p·cm^(-2),the threshold voltage of SiC MOSFETs with four bias conditions shifts to the left,and the degradation of electrical characteristics of SiC MOSFETs with gate bias is the most *** the deep level transient spectrum test,it is found that the defect energy level of SiC MOSFET is mainly the ON2(E_(c)-1.1 eV)defect center,and the defect concentration and defect capture cross section of SiC MOSFET with proton radiation under gate bias increase *** comparing the degradation of SiC MOSFET under proton cumulative irradiation,equivalent 1 MeV neutron irradiation and gamma irradiation,and combining with the defect change of SiC MOSFET under gamma irradiation and the non-ionizing energy loss induced by equivalent 1 MeV neutron in SiC MOSFET,the degradation of SiC MOSFET induced by proton is mainly caused by ionizing radiation *** results of TCAD analysis show that the ionizing radiation damage of SiC MOSFET is affected by the intensity and direction of the electric field in the oxide layer and epitaxial layer.

关键词： proton silicon carbide metal–oxide–semiconductor field-effect transistor(SiC MOSFET) degradation defect ionization radiation damage

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Reinforcing and toughening mechanism of the in-situ metastable nanostructured alumina-titanium oxide composite coating

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材料科学技术（英文版） 2025年第5期208卷 120-131页

作者： Yu-duo Ma Yong Yang Li-wu Yuan Wei Tian Hongjian Zhao Hebei Key Laboratory of New Functional Materials School of Materials Science and EngineeringState Key Laboratory of Reliability and Intelligence of Electrical EquipmentHebei University of TechnologyTianjin 300401China Hebei Huabei Diesel Engine Co. Ltd.Shijiazhuang 050081China Hebei Key Laboratory of New Functional Materials School of Materials Science and EngineeringState Key Laboratory of Reliability and Intelligence of Electrical EquipmentHebei University of TechnologyTianjin 300401China AECC Sichuan Gas Turbine Establishment Chengdu 610500China

High porosity and high brittleness are the main reasons that limit the long-term service life of the alumina-titanium oxide composite ***,a metastable nanostructured alumina-titanium oxide composite coating with high density and high properties was synthesized by plasma spraying of TiO2-Al composite *** main phases of the metastable nanostructured alumina-titanium oxide were y-Al2O3,TiO and *** coating,as prepared,contains various metastable microstructures,such as fine-grained,intra-/inter-granular,and"self-locking"*** metastable microstruc-tures are important for the improvement of hardness and toughness of the *** with other alumina-based composite coatings,the metastable nanostructured alumina-titanium oxide compos-ite coating showed the most impressive overall *** reinforcing and toughening mechanism of the metastable alumina-titanium oxide composite coating included fine grain strengthening and self-toughening of the metastable microstructure.

关键词： In-situ synthesis Metastable oxide Nanostructured coating Reinforcing and toughening mechanism

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Electromagnetically-induced-absorption-like ground state cooling in a hybrid optomechanical system

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Chinese Physics B 2025年第4期34卷 413-421页

作者： Yaoyong Dong Xuejun Zheng Denglong Wang Peng Zhao School of Electromechanical Engineering Guangdong University of TechnologyGuangzhou 510003China School of Mechanical Engineering and Mechanics Xiangtan UniversityXiangtan 411105China School of Physics and Optoelectronics Xiangtan UniversityXiangtan 411105China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510610China

We present a scheme for the electromagnetically-induced-absorption(EIA)-like ground state cooling in a hybrid optomechanical system which is combined by two-level quantum systems(qubits)and a high-Q optomechanical *** the weak qubit-cavity coupling,the system exhibits an EIA-like effect and this effect is caused by quantum destructive interference that is distinct from the conventional EIA effect driven by quantum constructive *** importantly,the EIA-like cooling mechanism can significantly enhance the cooling rate of the hybrid system,enabling the final phonon number beyond the classical cooling limit in the strong optomechanical coupling ***,the cooling effects of the EIA case is better than that of the normalmode splitting case under the same optomechanical coupling strength and qubit dissipation rate.

关键词： electromagnetically induced absorption ground state cooling optomechanics

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Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation

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Chinese Physics B 2023年第2期32卷 525-534页

作者：张鸿郭红霞雷志锋彭超张战刚陈资文孙常皓何玉娟张凤祁潘霄宇钟向丽欧阳晓平 School of Material Science and Engineering Xiangtan UniversityXiangtan 411105China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510610China Northwest Institute of Nuclear Technology Xi'an 710024China

Experiments and simulation studies on 283 MeV I ion induced single event effects of silicon carbide(SiC) metal–oxide–semiconductor field-effect transistors(MOSFETs) were carried out. When the cumulative irradiation fluence of the SiC MOSFET reached 5×10^(6)ion·cm^(-2), the drain–gate channel current increased under 200 V drain voltage, the drain–gate channel current and the drain–source channel current increased under 350 V drain voltage. The device occurred single event burnout under 800 V drain voltage, resulting in a complete loss of breakdown voltage. Combined with emission microscope, scanning electron microscope and focused ion beam analysis, the device with increased drain–gate channel current and drain–source channel current was found to have drain–gate channel current leakage point and local source metal melt, and the device with single event burnout was found to have local melting of its gate, source, epitaxial layer and substrate. Combining with Monte Carlo simulation and TCAD electrothermal simulation, it was found that the initial area of single event burnout might occur at the source–gate corner or the substrate–epitaxial interface, electric field and current density both affected the lattice temperature peak. The excessive lattice temperature during the irradiation process appeared at the local source contact, which led to the drain–source channel damage. And the excessive electric field appeared in the gate oxide layer, resulting in drain–gate channel damage.

关键词： heavy ion silicon carbide metal–oxide–semiconductor field-effect transistors(SiC MOSFET) drain–gate channel drain–source channel single event burnout TCAD simulation

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Two-dimensional dumbbell silicene as a promising anode material for(Li/Na/K)-ion batteries

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Chinese Physics B 2023年第9期32卷 28-34页

作者：刘曼程子爽张小明李叶枫靳蕾刘丛代学芳刘影王啸天刘国栋 State Key Laboratory of Reliability and Intelligence of Electrical Equipment and School of Materials Science and EngineeringHebei University of TechnologyTianjin 300130China School of Physical Science and Technology Southwest UniversityChongqing 400715China

Rechargeable ion batteries require anode materials with excellent performance,presenting a key challenge for *** paper explores the potential of using two-dimensional dumbbell silicene as an anode material for alkali metal ion batteries through density functional theory(DFT)*** findings demonstrate that alkali metal ions have negative adsorption energies on dumbbell silicene,and the energy barriers for Li/Na/K ion diffusion are as low as0.032 e V/0.055 e V/0.21 e V,indicating that metal ions can easily diffuse across the entire surface of dumbbell ***,the average open circuit voltages of dumbbell silicene as anode for Li-ion,Na-ion,and K-ion batteries are 0.42 V,0.41 V,and 0.60 V,respectively,with corresponding storage capacities of 716 m Ah/g,622 m Ah/g,and 716 m Ah/*** results suggest that dumbbell silicene is an ideal anode material for Li-ion,Na-ion,and K-ion batteries,with high capacity,low open circuit voltage,and high ion diffusion ***,our calculations show that the theoretical capacities obtained using DFT-D2 are higher than those obtained using DFT-D3,providing a valuable reference for subsequent theoretical calculations.

关键词： dumbbell silicene density functional theory anode materials ion batteries

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Cooperative effect of Cr and Al elements on passivation enhancement of eutectic high-entropy alloy AlCoCrFeNi_(2.1)with precipitates

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Journal of Materials science & technology 2023年第5期136卷 97-108页

作者： Xiaotian Duan Tiezhuang Han Xiao Guan Yuning Wang Huhu Su Kaisheng Ming Jing Wang Shijian Zheng State Key Laboratory of Reliability and Intelligence of Electrical Equipment Hebei University of TechnologyTianjin 300130China School of Material Science and Engineering Hebei University of TechnologyTianjin 300130China

In conventional corrosion-resistant alloys,precipitation usually reduces corrosion resistance severely by weakening passive films *** this work,we found that the aging-treated AlCoCrFeNi_(2.1)sam-ples,which have abundant nanosized L 12 and body-centered cubic(BCC)precipitates in the lamellar face-centered cubic(FCC)and B2 phases,displayed better corrosion resistance than solution-treated AlCoCrFeNi_(2.1)samples without *** the AlCoCrFeNi_(2.1)alloy,the FCC phase with L1_(2)precipi-tates and the B2 phase with BCC precipitates were protected by passive films enriched with Cr and Al elements,***,the Al-rich passive film of the B2 phase was less stable than the Cr-rich passive film of the FCC phase,so B2 phase dissolved *** Cr-rich passive film of the FCC phase remained stable with the formation of Al-rich L1_(2)precipitates inside the phase because those precipitates with the size of∼5 nm were too small to affect the composition of the Cr-rich passive *** formation of Cr-rich BCC precipitates within the B2 phase increased the content of the Al element inside the phase,improving the stability of Al-rich passive film on the B2 ***,BCC precip-itates with the size of∼30 nm were protected by Cr-rich passive film,which could inhibit the expansion of corrosion ***,the corrosion resistance of eutectic high-entropy alloy AlCoCrFeN 2.1 was unprece-dentedly enhanced by the precipitation of BCC *** study could provide an attractive strategy for designing high-entropy alloys with excellent corrosion resistance and high strength.

关键词： Eutectic high-entropy alloy Passive film Corrosion resistance Precipitates TEM

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0.58 mΩs·cm2/523 v GaN Vertical Schottky Barrier Diode with 15.6 kA/cm2Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation

IEEE Electron Device Letters

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IEEE Electron Device Letters 2024年第6期45卷 964-967页

作者： Qi, Wei Zhou, Feng Ma, Teng Xu, Weizong Zhou, Dong Ren, Fangfang Chen, Dunjun Zhang, Rong Zheng, Youdou Lu, Hai Nanjing University School of Electronic Science and Engineering Nanjing210093 China China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou511370 China

Achieving high-performance fully-vertical GaN devices on low-cost and large-scale foreign substrates are highly attractive for the development of device technology. In this work, by performing pulsed laser lift-off and laser annealing techniques, high-performance fully-vertical GaN Schottky barrier diodes (SBDs) with superior N-face ohmic contact characteristics are demonstrated. The resulting device exhibits low specific contact resistivity of 3.51×10-5Ω · cm2 and differential specific on-resistance of 0.58 mΩ· cm2, as well as intact anode Schottky contact. In particular, this device demonstrates robust electrothermal robustness, such as the largest surge current density of 15.6 kA/cm2 to date. Moreover, by implementing N-implanted termination, the breakdown voltage of the device is remarkably enhanced from 240 to 523 V, which is competitive with the state-of-the-art quasi-vertical SBDs. These results reveal the notable potential of pulsed laser lift-off/annealing combined with N-implanted termination for realizing fully-vertical devices. © 1980-2012 IEEE.

关键词： Anodes

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Automatic Generation of Intelligent Vehicle Testing Scenarios at Intersections Based on Natural Driving Datasets

IEEE Transactions on Intelligent Vehicles

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IEEE Transactions on Intelligent Vehicles 2023年第9期9卷 1-11页

作者： Hu, Lin Lu, Tao Li, Gen Zhang, Xin Cai, Hai School of Automotive and Mechanical Engineering and Hunan Province Key Laboratory of Safety Design and Reliability Technology for Engineering Vehicle Changsha University of Science and Technology Changsha China

Turning right at a junction without the aid of traffic signals is a frequent cause of intersection accidents and a situation that intelligent automobiles will need to handle well in the future. This allows this study to choose the traffic circumstances of turning right at junctions and traveling straight through them. It then suggests an automatic approach for creating test scenarios for intelligent vehicles based on Monte Carlo simulation. Through the examination of scene feature parameters and a natural driving dataset, a Markov chain-based right-turn trajectory model was created. Then, test vehicle trajectories and right-turn trajectories were produced using Monte Carlo simulations. By figuring out the average DTW (Dynamic Time Warping) value between the created and actual right-turn trajectories in the four speed intervals with the highest occurrence probabilities, the authenticity of the generated right-turn trajectories was confirmed. The produced trajectories were simultaneously loaded into the software for cooperative simulation. The AEB (Automatic Emergency Braking) system's shortcomings were shown by extracting the relative positions of the two cars before to the incident. The two popular varieties of AEB algorithm models were then compared using safety and comfort parameters. Furthermore, the test scenario's risk level can be managed by changing the scenario feature settings. There are some potential uses for the suggested test scenario generation method in the testing and assessment of algorithms for intelligent vehicles. IEEE

关键词： Trajectories

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Microstructure evolution and precipitation behavior of Al-Mg-Si alloy during initial aging

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China Foundry 2023年第1期20卷 57-62页

作者： Ya-ya Zheng Bing-hui Luo Wei Xie Wang Li Department of Materials Engineering Hunan University of HumanitiesScience and TechnologyLoudi 417000HunanChina College of Materials Science and Engineering Central South UniversityChangsha 410083China Key Laboratory of Safety Design and Reliability Technology for Engineering Vehicle Changsha University of Science&TechnologyChangsha 410114China

The microstructure evolution and precipitation behavior of Al-Mg-Si alloy during initial aging were studied using hardness testing, conductivity testing, differential scanning calorimetry(DSC), and high resolution transmission electron microscopy(HRTEM). The results show that the precipitation sequence of the Al-Mg-Si alloy during initial aging can be represented as: supersaturated solid solution → spherical Mg/Si clusters → needle-like Guinier Preston(GP) zone → β″. Clusters are completely coherent with the Al matrix. The GP zone with relatively complete independent lattice parameters that differ slightly from the Al matrix parameters, is oriented along the direction of <111>Aland lying on {111}Alplane. The strength of the Al-Mg-Si alloy is greatly enhanced by the threedimensional strain field that exists between the β″ phase and the two {200}Alplanes. After aging at 170 ℃ for 6 h, the hardness reaches the peak of 127 HV and remains for a long time. At this stage, the electrical conductivity keeps relatively stable due to the formation of coherent precipitates(Mg/Si clusters/GP zones) and the reduction in solute atom concentration in the Al matrix. The severe coarsening and decreased number density of the β″ phase during the over-aging stage result in a significant decrease in the hardness.

关键词： Al-Mg-Si alloy precipitation behavior strengthening mechanism strain field β″

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Discussion on the reliability Work of Future Combat Aircraft under Aircraft/Engine Integrated Design 14

Discussion on the Reliability Work of Future Combat Aircraft...

引用

14th International Conference on reliability, Maintainability and Safety, ICRMS 2023

作者： Ding, Yu Li, Tianhao Institute of Reliability Engineering Beihang University Science and Technology The Reliability and Environmental Engineering Laboratory China Beijing China

ISBN: (纸本)9798350329988

Traditional independent methods of aircraft and engine design can no longer meet the mission requirements of future aircraft, including high maneuverability, high energy, large airspace, and wide speed range. To achieve optimal matching between aircraft and engine and promote full play to the maximum performance potential of aircraft and engines, aircraft-engine integration designs are essential. Therefore, considering the highly coupled structure, complex control logic, and dramatic increase in energy and heat dissipation requirements under the integration design to ensure a high mission success rate, corresponding reliability analysis work and reliability level improvement of the whole aircraft are necessary. In this paper, the characteristics of work, structure, environment, and other aspects of aircraft-engine integrated design are initially considered, and the steps to conduct reliability work are discussed. © 2023 IEEE.

关键词： reliability analysis

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