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4th International Conference on Information Communication and Signal Processing, ICICSP 2021

作者： Wei, Long Ren, Fang Qin, Zhaohong Gao, Bo Zhang, Zhong Guo, Jing Hou, Chuantao Li, Haibo Science and Technology on Reliability and Environment Engineering Laboratory Beijing Institute of Structure and Environment Engineering Beijing100076 China

ISBN: (纸本)9781665407571

Acoustic imaging implemented by microphone arrays has been widely used in variety of areas. Aiming at overcoming the drawbacks of the exhaustive search processes for some commonly used deconvolution methods, the Partial Swarm Optimization (PSO) combined with a 3D microphone array is introduced in this work to localize the acoustic sources. Based on the analysis result of the simulated data, the proposed method presents the potential to map the acoustic sources in 3D with acceptable computation time. © 2021 IEEE.

关键词： Microphone array

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Degradation Analysis of Double Trench-Gate SiC MOSFETs Under Single Surge Current Stress

Degradation Analysis of Double Trench-Gate SiC MOSFETs Under...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Mowen Zhang Qijun Wen Liang He Dezhi Ma Shuanzhu Fang Zhizheng Wang Zhiyuan He Jia-Yue Yang Yiqiang Chen Reliability Physics and Application of Electronic Component Laboratory School of Energy and Power Engineering Shandong University Science and Technology Jinan China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China School of Integrated Circuits Guangdong University of Technology Guangzhou China School of Energy and Power Engineering Shandong University Jinan China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

In this work, the degradation processes and mechanisms of commercial double trench gate SiC MOSFETs under single surge current (SSC) stresses are delved into. Based on comprehensive characterizations on device parameters before/after SSC stresses, we elucidate degradation behaviors exhibited by these MOSFETs. Notably, when SSC reaches the maximum value, the stability of the threshold voltage (Vth) and on-state resistance ( $R$ ds,on ) suggests that the gate oxide for these MOSFETs is not obviously influenced by SSC stresses. Additionally, scanning acoustic microscopy (SAM) analysis confirm the reliability of package. Through directly measuring the I-V characteristics of the body diode, the damage to body diode is identified as the primary cause of device failure, resulting the increase of the drain leakage current (Idss) and the loss in blocking capability. This work contributes usefully to the refinement of surge reliability assessment for SiC MOSFETs.

关键词： Degradation MOSFET Silicon carbide Current measurement Logic gates Loss measurement Threshold voltage

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Investigation of Threshold Voltage Instability in p-GaN Gate HEMTs Under Surge Current Stress 17

Investigation of Threshold Voltage Instability in p-GaN Gate...

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17th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2024

作者： Wang, Xiaoming Shi, Yu Zhou, David Zhi, Haizhao Xia, Yun Wan, Yuxi Sun, Ruize Chen, Xinghuan Chen, Wanjun Zhang, Bo Shenzhen Pinghu Laboratory Shenzhen518111 China University of Electronic Science and Technology of China State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China Institute of Electronic and Information Engineering of UESTC in Guangdong Dongguan523808 China China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510610 China

ISBN: (纸本)9798350361834

In this paper, the threshold voltage (V T H ) instability mechanism in p-GaN gate HEMTs under surge current stress is revealed. The significant positive shift of V TH (Δ V TH ), which has a strong Ipeak (i.e., the peak value of surge current) dependence, is observed after the surge current passes through the device. As the Ipeak exceeds a critical value (I critical ), the Δ V TH will saturate and may decrease. Furthermore, the I critical varies with the V GS , initial gate leakage current (I g , init ), and substrate termination. It is suggested that electron trapping and hole trapping would take place during the stress. The electron trapping is more dependent on the current level, while the hole trapping is more dependent on the surge voltage, mainly the gate-to-channel voltage (V GC ). It is confirmed by mix-mode simulation and further experiments. © 2024 IEEE.

关键词： Gallium nitride

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Topological surface states as key catalytic elements for hydrogen-evolution reactions with the topological semimetal Cu3PdN

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Physical Review Applied 2024年第6期22卷 064090-064090页

作者： Minghang Li Yinuo Huo Lirong Wang Lei Jin Ying Liu Xuefang Dai Guodong Liu Xiaoming Zhang State Key Laboratory of Reliability and Intelligence of Electrical Equipment and School of Materials Science and Engineering Hebei University of Technology Tianjin 300130 China School of Mechanical Medical and Process Engineering Queensland University of Technology Gardens Point Campus Brisbane QLD 4001 Australia

Topological materials, distinguished by symmetrically protected topological surface states (TSSs), have emerged as highly promising catalysts for hydrogen evolution reactions (HERs). In light of the promising potential of topological materials in catalytic processes, there is an urgent need to delve into the underlying mechanisms. In this work, our focus centers on Cu3PdN, distinguished by its antiperovskite structure. Notably, this material exhibits a distinctive Weyl nodal chain featuring nodal loops in proximity to the Fermi level. We select Cu3PdN as a representative case study to explore and elucidate the intricate interplay between topological properties and catalytic performance. This work was carried out using first-principles calculations. The presence of topological nodal loops, characterized by drumhead surface states, significantly augments the surface density of states, resulting in an outstanding catalytic performance in the HER process. Remarkably, the catalytic efficiency demonstrated by this mechanism surpasses that of the benchmark catalyst Pt. Notably, we uncover a linear correlation between the presence of TSSs and catalytic efficiency. This revelation establishes TSSs as a superior metric for characterizing the performance of topological catalysts compared to conventional descriptors such as the d-band center. Our study not only broadens the landscape of topological catalysis but also provides a tangible exemplar for elucidating the inherent topological mechanisms at play in these catalysts. The identification of Cu3PdN as a potent HER catalyst, guided by TSS properties, represents a significant advancement, offering other avenues for the design and understanding of topological materials in catalytic applications.

关键词： Hydrogen evolution reaction

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Microstructure and properties of Al_(2)O_(3)-ZrO_(2)-TiO_(2)composite coatings prepared by plasma spraying

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Rare Metals 2021年第7期40卷 1825-1834页

作者： Peng-Yue Gao Yu-Duo Ma Wen-Wei Sun Yong Yang Chen Zhang Yu-Hang Cui Yan-Wei Wang Yan-Chun Dong School of Materials Science and Engineering Hebei University of TechnologyTianjin 300132China Key Laboratory for New Type of Functional Materials in Hebei Province Tianjin 300132China State Key Laboratory of Reliability and Intelligence of Electrical Equipment Tianjin 300132China

Al_(2)O_(3)-ZrO_(2)-TiO_(2)coatings were successfully prepared by plasma spraying Al_(2)O_(3)-ZrO_(2)composite powders with and without TiO_(2)*** effects of TiO_(2)on the phase composition,microstructure and properties of the Al_(2)O_(3)-ZrO_(2)coating were *** results show that the Al_(2)O_(3)-ZrO_(2)-TiO_(2)composite powder was composed of t-ZrO_(2),a-Al_(2)O_(3),m-ZrO_(2)and rutile,while the Al_(2)O_(3)-ZrO_(2)-TiO_(2)composite coating consisted of t-ZrO_(2),a-Al_(2)O_(3)and c-Al_(2)O_(3).The diffraction peaks of TiO_(2)could not be detected in the Al_(2)O_(3)-ZrO_(2)-TiO_(2)coating even up to10 wt%TiO_(2)*** reason may be that TiO_(2)was dissolved in the amorphous phase or formed solid solution with c-Al_(2)O_(3)phase in the coating during *** with the Al_(2)O_(3)-ZrO_(2)coating,the as-prepared Al_(2)O_(3)-ZrO_(2)-TiO_(2)coating had denser microstructure,less microcracks and more amorphous *** density of the Al_(2)O_(3)-ZrO_(2)-TiO_(2)coating increased with the increase of TiO_(2)*** Al_(2)O_(3)-ZrO_(2)-10 wt%TiO_(2)coating had the most uniform and dense microstructure,possessed higher toughness,adhesive strength and wear resistance compared with the Al_(2)O_(3)-ZrO_(2)coating,which was due to its lower porosity and more uniform microstructure.

关键词： Al_(2)O_(3)-ZrO_(2) Composite coatings Plasma spraying TiO_(2)

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Degradation Evaluation of Neutron Irradiation Effect on AlGaN/GaN Metal-Insulator- Semiconductor High Electron Mobility Transistors

Degradation Evaluation of Neutron Irradiation Effect on AlGa...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Xiaoyue Duan Pinbo Li Liang He Yijun Shi Xinghuan Chen Yiqiang Ni Jun Liu Zhiyuan He Yiqiang Chen Physics and Application of Electronic Component Laboratory School of Electrical Engineering University of South China Science and Technology on Reliability Hengyang China Physics and Application of Electronic Component Laboratory Science and Technology on Reliability Guangzhou China School of Electrical Engineering University of South China Hengyang China School of Integrated Circuits Guangdong University of Technology Guangzhou China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

We investigate the degradation effects of neutron irradiation on AIGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) in this work. The performance of the devices is characterized through relevant electrical current-voltage (I-V) test and capacitance- voltage (C-V) test. The result indicates that the electrical parameter of the device degrades after neutron irradiation, such as positive shift of threshold voltage, reduction in output drain current, and the increase of the on-resistance. Additionally, combining with the frequency-dependent conductance method, it displays that shallow energy level- interface states at the AIGaN/GaN heterojunction increase, along with slightly shifting to deeper energy level after neutron irradiation. Neutron irradiation introduces more interface states and increase the scattering which degrading the carrier concentration and mobility, causing related degradation on electrical performances. This study provides useful reference value for the application of GaN-based devices in the aerospace.

关键词： Degradation Performance evaluation Radiation effects Electron traps Neutrons Energy states Threshold voltage

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Preparation and Properties of High Temperature Transient Thin Film Thermopile Heat Flux Sensor

SSRN

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SSRN 2024年

作者： Xie, Shanghang Zhu, Jin Jiang, Hongchuan Zhao, Xiaohui Liu, Baorui Jia, Zhouxia State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China Science and Technology on Reliability and Environment Engineering Laboratory Beijing Institute of Structure and Environment Engineering Beijing100076 China

The thermopile of the sensor consists of 192 pairs Pt-PtRh10 thermocouples with length 1 mm and width 100 μm in serpentine series were deposited on Al2O3 ceramic substrates by photolithography-coating process. The thermal resistance layers with the proposed low thermal conductivity coefficient features a meshed cavity structure, four thermal resistance layers were spaced over the thermopile contacts to enhance the sensitivity of the sensor. Calibration of the sensor’s sensitivity was performed by a flat-plate radiative heat flux device, while its response time was measured by pulsed laser. Finally, the sensor’s performance in an actual application environment was simulated using a wind tunnel. The results showed that the thin film heat flux sensor can operate in environments ranging from 200 to 1500 ℃, with a sensitivity of 0.03067 m2·μV/W, the maximum relative error is 8.5% and an average response time of 12.7 μs. The sample exhibited stable performance during wind tunnel testing, responding quickly to changes in heat flux. © 2024, The Authors. All rights reserved.

关键词： Thermocouples

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Research on Brain-Controlled Robot System Based on Intelligent Decision Fusion Shared Control

Research on Brain-Controlled Robot System Based on Intellige...

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第43届中国控制会议

作者： Ziqi Zhang Mengfan Li Jingyu Wang Chunlong Wu State Key Laboratory of Reliability and Intelligence of Electrical Equipment School of Health Science and Biomedical EngineeringHebei University of Technology Hebei Key Laboratory of Bioelectromagnetics and Neuroengineering Tianjin Key Laboratory of Bioelectromagnetic Technology and Intelligent Health School of Health Science and Biomedical Engineering Hebei University of Technology School of Mechanical Engineering Hebei University of Technology

ISBN: (数字)9789887581581

ISBN: (纸本)9798350366907

As machine intelligence continues to advance, the role of Human-Robot Collaboration（HRC） control technology becomes increasingly prominent. In current control systems, it is crucial to consider how to appropriately integrate human decision-making with robotic decision-making on the foundation of machine intelligence. This integration aims to fully leverage the respective decision-making strengths of humans and robots. Brain-Computer Interface（BCI）, as a technology that utilizes human biological signals to recognize human intentions, can accurately convey human decisions to the system. Addressing the issue of limited interaction in brain-controlled robot navigation in unstructured environments, this study proposes a navigation road segmentation method based on the U-net algorithm. This method extracts the effective navigation area and subdivides it,enabling the selection of navigation points *** robot, controlled based on the movease architecture, accomplishes automatic navigation to reach the user-selected navigation points. Through experiments comparing with the single-step shared control mode（SS-SC）, the effectiveness of the intelligent decision fusion shared control（IDF-SC） mode is validated. Eight participants took part in the experiment, where they were instructed to control the robot to navigate towards the endpoint and complete obstacle avoidance tasks. The experimental results indicate that the IDF-SC mode can shorten task duration, reduce the number of commands, and optimize navigation paths. The research outcomes of this project contribute to enhancing the safety and intelligence in the field of human-machine collaboration.

关键词： Human-robot collaboration Brain-computer interface U-net network shared control

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Diagnosis of Inter-Turn Short Circuit Fault of AMB Based on Forgetting Factor Recursive Least Square Algorithm 8

Diagnosis of Inter-Turn Short Circuit Fault of AMB Based on ...

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8th International Conference on reliability of Electrical Products and Electrical Contacts, ICREPEC 2022

作者： Li, Henghui Wu, Lijian Su, Zhenzhong Chen, Junquan Lyu, Zekai Niu, Feng College of Electrical Engineering Zhejiang University Hangzhou China National Key Laboratory of Science and Technology on Vessel Integrated Power System Naval University of Engineering Wuhan China State Key Laboratory of Reliability and Intelligence of Electrical Equipment Hebei University of Technology Tianjin China

ISBN: (纸本)9789881532374

Fault diagnosis is one of the most important ways to improve the reliability of an active magnetic bearing (AMB) system. The inter-turn short circuit (ITSC) fault of an AMB may lead to catastrophic consequence such as rotor impact and winding open circuit. Hence, it is vital to diagnose the ITSC fault in real-time. To diagnosis the ITSC fault of AMB, a model of the AMB with ITSC fault is established in this paper. A method is proposed to extract the fault feature utilizing the forgetting factor recursive least square (FFRLS) algorithm. Furthermore, a compensation method based on look-up table is introduced to improve the robustness of the proposed method to the eccentricity of the rotor. The effectiveness of proposed method is verified by experiments. © ICREPEC *** rights reserved

关键词： Failure analysis

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4.9 GHz A1-mode Lamb Wave Resonator based on Partially Released LN Film

4.9 GHz A1-mode Lamb Wave Resonator based on Partially Relea...

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International Conference on Electronics technology (ICET)

作者： Zhuo Zhang Ting-Yang Zhang Qin-Wen Huang Shao-Hua Yang Xiao-Sheng Zhang Cheng Tu School of Electronic Science and Engineering University of Electronic Science and Technology of China Chengdu China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

This work presents a 4.9 GHz ${A}_{1}$ -mode Lamb wave resonator (LWR) based on partially released Z-cut lithium niobate (LN) thin film, which is aimed at application of 5G communication in N79 band. The designed LWR utilizes the horizontal electric field for efficient excitation of first-order antisymmetric (A 1 ) mode in the acoustic cavity made of LN film. The fabrication process for the designed LWR is described and validated. The measured results show that the partially released devices achieve large electromechanical coupling coefficient (k$_{t}^{2}$=27%), which is comparable to that of reported fully released devices. The measured results are in good agreement with the finite element (FE) simulations. The presented partially released LWRs show prospect to improve the mechanical robustness of such devices without much sacrifice to performance.

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