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66th International Annual Meeting of the Human Factors and Ergonomics Society, HFES 2022

作者： Boring, Ronald L. Ulrich, Thomas A. Park, Jooyoung Ahn, Jeeyea Lew, Roger Human Factors and Reliability Department Idaho National Laboratory Idaho FallsID United States Nuclear Engineering Ulsan National Institute of Science and Technology Ulsan Korea Republic of Virtual Technology and Design Program University of Idaho MoscowID United States

The Human Unimodel for Nuclear technology to Enhance reliability (HUNTER) is simulation software for modeling the human portion of risk. HUNTER is built on a framework that separately models individual, task, and environmental factors. As a dynamic human reliability analysis (HRA) method, it affords advantages over traditional static or worksheet-based HRA approaches, such as the ability to model what-if scenarios and produce outputs beyond human error probabilities. In this paper, a validation was conducted of HUNTER task time estimates vs. empirical data collected for a steam generator tube rupture scenario. The HUNTER model produced using GOMS-HRA task-level primitives yielded timing results very closely aligned to empirical reference data for base and complex conditions, suggesting the tool holds promise for HRA requiring time estimation. © 2022 by Human Factors and Ergonomics Society. All rights reserved.

关键词： Ergonomics

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Resonance cavity-enhanced all-optical switching in a GdCo alloy absorber

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Photonics Research 2023年第11期11卷 1870-1879页

作者： YUNQING JIANG XIAOQIANG ZHANG HOUYI CHENG HUAN LIU YONG XU ANTING WANG CONG WANG STÉPHANE MANGIN WEISHENG ZHAO School of Integrated Circuit Science and Engineering Hefei Innovation Research InstituteBeihang UniversityBeijing 100191China Anhui High Reliability Chips Engineering Laboratory Hefei 230013China School of Energy and Power Engineering Beihang UniversityBeijing 100191China Department of Optics and Optical Engineering University of Science and Technology of ChinaHefei 230026China Institut Jean Lamour UMR CNRS 7198Universite de LorraineNancy 54011France

In spintronic applications,there is a constant demand for lower power consumption,high densities,and fast writing speed of data ***-optical switching(AOS)is a technique that uses laser pulses to switch the magnetic state of a recording medium without any external devices,offering unsurpassed recording rates and a simple *** extensive research on the mechanism of AOS,low energy consumption and fast magnetization reversing remain challenging engineering *** this paper,we propose a newly designed cavity-enhanced AOS in Gd Co alloy,which promotes optical absorption by twofold,leading to a 50%reduction in energy ***,the time-resolved measurement shows that the time of reversing magnetization reduces at the same *** new approach makes AOS an ideal solution for energy-effective and fast magnetic recording,paving the way for future developments in high-speed,low-power-consumption data recording devices.

关键词： alloy structure recording

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The Effect of Pore Defects on the Interfacial Thermal Resistance of GaN-Diamond Heterostructure

The Effect of Pore Defects on the Interfacial Thermal Resist...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Chao Yang Pengfei Zhao Jian Wang Dezhi Ma Zhiyuan He Zhiwei Fu Jia-Yue Yang School of Energy and Power Engineering Shandong University Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Jinan China School of Microelectronics Faculty of Electronic and Information Engineering Xi'an Jiaotong University Xi'an China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China School of Energy and Power Engineering Shandong University Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China School of Energy and Power Engineering Shandong University Optics & Thermal Radiation Research Center Institute of Frontier and Interdisciplinary Science Shandong University Jinan China

Heat transfer across the GaN-diamond interface is very important in the thermal management of GaN electronics on diamond substrates. The influence of various defects caused by manufacturing processes on the thermal resistance of the GaN-diamond interface is still unclear. In this work, we use non-equilibrium molecular dynamics simulations to investigate the effect of possible pore defects on GaN-diamond interfacial heat transport. Square pores of different sizes are introduced at the GaN-diamond interface. By changing the pore cross-sectional area, we found that the introduction of pore defects will significantly increase the interfacial thermal resistance compared with the case without defects. Pores can also cause more significant stress and strain on the edge atoms at the interface and may hinder the normal transmission of phonons. At the same time, we calculated the phonon density of states (PDOS) corresponding to different pore sizes to analyze the reason for the change in interfacial thermal resistance. PDOS calculation results show that the higher porosity leads to the enhancement of phonon scattering at the interface. The low-frequency phonons that are more easily transmitted through the interface are scattered into high-frequency phonons, increasing the thermal resistance of the interface.

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Numerical Simulation of Harmonic Response Analysis for Small Out-Line Package

Numerical Simulation of Harmonic Response Analysis for Small...

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Software engineering, Social Network Analysis and Intelligent Computing (SSAIC), Asia-Pacific Conference on

作者： Hai Lin Xianshan Dong Wei Su Qinwen Huang Agam Tomar School of Mechanics and Construction Engineering Jinan University Guangzhou China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China MOE Key lab of Disaster Forecast and Control in Engineering Guangzhou China Faculty of Engineering and Mathematical Sciences University of Western Australia Australia

ISBN: (数字)9798350393682

ISBN: (纸本)9798350393699

In order to discuss the influence of the number of sheets on acceleration and frequency curve of sample surface, the finite element model of clamp, SOP sample and metal sheet is firstly established with Solidworks. Different number of sheets are laid on the surface of SOP sample. Then changing the number of the paper sheets, harmonic response analysis is converted based on modal analysis. The influence of different number of sheet on acceleration and frequency curve is discussed. The results show the relation between acceleration-frequency curve of different thickness of paper, which provides reference for packaging design.

关键词： Solid modeling Social networking (online) Modal analysis Metals Packaging Harmonic analysis Numerical simulation

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Empirical Modeling of NPN Bipolar Transistors Under Reverse Emitter-Base Junction Current Hot Carrier Stress

Empirical Modeling of NPN Bipolar Transistors Under Reverse ...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Xianyu Zhang Hao Niu Ziyang Wang Rui Gao Yingchao Xu School of Optoelectronics and Communication Engineering Xiamen University of Technology Xiamen China National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

Hot carrier stress (HCS) under reverse Emitter-Base junction current (Ireb) is a major degradation mechanism in NPN bipolar transistors. With the continuous miniaturization of devices, the internal electric fields of these devices increase, leading to a heightened possibility of HCS. This makes understanding and mitigating the HCS effect crucial for the development of reliable, high-performance electronic devices. We employed the constant current stress (CCS) method on NPN bipolar transistors subjected to Ireb stress to study HCS. Ireb and temperature dependence are investigated using an empirical HCS model. The results are beneficial in industries where long device lifespan and reliability are critical, such as in space applications, medical devices, or critical infrastructure systems.

关键词： Degradation Industries Bipolar transistors Temperature dependence Temperature Medical devices Hot carriers

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Effect mechanism analysis of low-temperature on short-circuit robustness of SiC MOSFETs

Effect mechanism analysis of low-temperature on short-circui...

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IEEE Conference on Industrial Electronics and Applications (ICIEA)

作者： Pengkai Wang Yuan Chen Xinyu Zhu Hu He Junhui Li State Key Laboratory of Precision Manufacturing for Extreme Service Performance School of Mechanical and Electrical Engineering Central South University Changsha China National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component The China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (数字)9798350360868

ISBN: (纸本)9798350360875

The performance of SiC MOSFETs in practical operational environments is challenged by multifaceted stress scenarios, encompassing thermal, mechanical, and electrical stress, which significantly influence their reliability and operational longevity. Consequently, a comprehensive exploration of aging precursors and failure mechanisms becomes imperative for the SiC MOSFETs under diverse stress interactions. This study focused on the impact of low- temperature storage (LTS) on short-circuit (SC) ruggedness through direct current characteristic tests (DC test), low- frequency noise tests (LFN), and failure analysis (FA) for 1.2 kV SiC MOSFETs. The outcomes revealed that LTS stress adversely affected short-circuit withstand time (SCWT). These findings provide insights into the reliability and operational lifespan of SiC MOSFETs under real-world operating conditions.

关键词： MOSFET Electron traps Temperature Silicon carbide Noise Failure analysis Logic gates

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Research on mechanism of improving the cut-off frequency of terahertz Schottky diodes in air-bridge structures by structure optimization

Research on mechanism of improving the cut-off frequency of ...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Yuebo Liu Ke Zhang QiuLing Qiu Xi Luo Xiaoting Chen Ruihan Liu Honghui Liu Reliability Physics and Application Technology of Electronic Component Key Laboratory China Electronic Product Reliability and Environmental Testing Research Institute (CEPREI) Guangzhou China Reliability Research and Analysis Centre China Electronic Product Reliability and Environmental Testing Research Institute (CEPREI) Guangzhou China Components and materials sector data center China Electronic Product Reliability and Environmental Testing Research Institute (CEPREI) Guangzhou China State Key Laboratory of High Power Semiconductor Lasers Changchun University of Science and Technology Changchun China School of Materials Science and Engineering Xiamen University of Technology Xiamen China School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan China Testing technology Research Center China Electronic Product Reliability and Environmental Testing Research Institute (CEPREI) Guangzhou China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

In the realm of air bridge structures for Schottky barrier diodes operating in the millimetre wave or terahertz band, cut-off frequency serves as a critical metric for gauging device performance. This research holds significance in guiding device design and enhancing performance by refining the device's architecture, thereby reducing capacitance values and elevating cut-off frequency without adding complexity to the manufacturing process. In this study, we investigate how the shape and spacing of mesas or pads impact device capacitance through electrostatic field simulations, leveraging Maxwell's capacitance matrix and mutual capacitance matrix. Simulation analysis and experimental validation reveal that devices with circular Schottky contact electrode pads and minimal pad area exhibit lower capacitance values. Furthermore, we observe that the capacitance of the device initially decreases and then increases with the length of the air bridge. An optimal air bridge length exists that minimizes the capacitance of the device. This research offers valuable insights for refining these devices.

关键词： Electrodes Performance evaluation Schottky diodes Shape Atmospheric modeling Cutoff frequency Schottky barriers

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Proton Irradiation Induced Single-Event Burnout Effect in P-Gan Power Devices

SSRN

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SSRN 2024年

作者： Bai, Ru Xue Guo, Hong Xia Zhang, Hong Zhang, Feng Qi Ma, Wu Ying Ouyang, Xiao Ping Zhong, Xiang Li The School of Materials Science and Engineering Xiangtan University Xiangtan411105 China Northwest Institute of Nuclear Technology Xi’an710024 China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou510610 China Zhejiang University China

The microphysical mechanism of proton-induced single-event burnout (SEB) effect in P-GaN power devices was investigated by experiments and simulations. The experiment results show that when the proton energy is 100 MeV, the proton flence reaches 1.38×1011 p·cm-2, and the bias voltage is 600 V, the device will burnout. The transport and deposition processes of particles in the failure event were simulated by Monte Carlo and TACD methods. The simulation results show that the nuclear reaction of protons with the material of the device leads to the generation of many electron-hole pairs. Under the action of the electric field, electrons are rapidly collected at the drain electrode, and holes accumulate under the gate. The accumulation of charge under the gate lowers the potential barrier, producing the bipolar effect and the back-channel effect. These two effects drive more electrons toward the drain, which leads to a large current breakdown in the drain. Notably, the additional electric field significantly impacts the SEB generation. © 2024, The Authors. All rights reserved.

关键词： Monte Carlo methods

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Structural reliability Analysis Method Based on Regular Vine Copula Model with the Asymmetric Tail Correlation

SSRN

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SSRN 2023年

作者： Liu, Xin Lai, Hao Liu, Kai Wu, Shaowei Li, Qiqi Wang, Fang Zhou, Zhenhua The State Key Laboratory of Mechanical Transmissions Chongqing University 400044 China Hunan Province Key Laboratory of Safety Design and Reliability Technology for Engineering Vehicle Changsha University of Science and Technology Changsha410114 China

Considering the asymmetric tail correlations between variables in reliability analysis, a new structural reliability analysis method based on regular vine copula models is proposed. Firstly, a product of multiple pair-copula functions and marginal density functions based on regular vine copula models are used to construct the joint probability density function. Meanwhile, the asymmetric copula functions are introduced into the candidate construction sets of pair-copula functions for the asymmetric tail correlations between variables. Secondly, the Kendall rank correlation coefficient and the Akaike Information Criterion (AIC) are adopted to select the optimal pair-copula functions. Based on the theory of AIC, the optimal pair-copulas can be selected when the minimum AIC value is obtained. Thirdly, taking the difference of multi-dimensional correlations into account, six different regular vine copula models are used to construct the multivariate joint probability density function and the corresponding reliability analysis based on six types regular vine copula models with the asymmetric tail correlation are proposed. Finally, three numerical examples and an engineering example are investigated to verify the validity of the proposed method. © 2023, The Authors. All rights reserved.

关键词： reliability analysis

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Enhanced Inverter Hybrid Fault Diagnosis Through RAM and CNN Integration

Enhanced Inverter Hybrid Fault Diagnosis Through RAM and CNN...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Linghui Meng Lin Li Yuanyuan Jiang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou Guangdong China Anhui University of Science and Technology School of Institute of Artificial Intelligence Huainan Anhui China Anhui University of Science and Technology School of electrical and Information Engineering Huainan Anhui China

ISBN: (数字)9798350329988

ISBN: (纸本)9798350329995

Deep learning has been widely used in inverter open-circuit fault diagnosis; however, traditional neural networks only extract signal features of inverter faults without distinguishing between significant and minor features. To address this limitation, this paper proposes a diagnostic method for inverter hybrid faults that combine reverse attention mechanism (RAM) and convolutional neural networks. The proposed method highlights important features by utilizing RAM to reverse the attention and prune the minor features. In addition, long short-term memory is used to learn temporal information between the features. Finally, fault classification is performed using fully connected layers. Simulation experiments indicate that the proposed diagnostic method significantly improves fault diagnosis accuracy. Compared to traditional neural network fault diagnosis methods, our proposed method achieves up to 8.07% higher diagnosis accuracy, thereby validating its effectiveness.

关键词： Fault diagnosis Deep learning Accuracy Neural networks Random access memory Feature extraction Inverters Safety Convolutional neural networks Long short term memory

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