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检索条件"机构=Science and Technology Monolithic Integrated Circuits"

共 193 条记录，以下是111-120 订阅

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An InP DHBT 140 GHz-165 GHz Amplifier

An InP DHBT 140 GHz-165 GHz Amplifier

引用

2015 International Conference on Communication Problem-Solving(ICCP)

作者： Sun Yan Cheng Wei Li Ou Peng Lu Hai Yan Li Xiao Wang Yuan Niu Bin Scienceand Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China

We present a compact, 3-stage millimeter-wave monolithic integrated circuit(MMIC) amplifier with an operating frequency of 140-165 GHz, formed by common-emitter configured 0.5 um In P DHBTs and a multilayer thin-film microstrip(TFM) wiring environment. The amplifier smallsignal gain exhibits >5 dB from 140 GHz-165 GHz. The peak gain is 11 dB at 140 GHz. This is the first time reported In P DHBT MMIC amplifier operating in D-band employing TFM in china. The total size of this 3-stage amplifier is only 1.04 mm ×0.88 mm.

关键词： Indium phosphide(InP) Heterojunction bipolar transistors(HBTs) Millimeter-wave monolithic integrated circuit(MMIC) Amplifier D-band thin-film microstrip(TFM)

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100GHz Static Frequency Divider Based on 0.5μm InP/InGaAs DHBT

100GHz Static Frequency Divider Based on 0.5μm InP/InGaAs D...

引用

IEEE International Conference on Communication Problem-Solving

作者： Bin Niu Wei Cheng You-Tao Zhang Yuan Wang Hai-Yan Lu Long Chang Jun-Ling Xie Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

A static divide-by-2 frequency divider based on InP/InGaAs DHBT technology is presented. On chip thin film resistor and capacitor were integrated. Two levels of interconnect were developed. Composite collector design ... 详细信息

ISBN: (纸本)9781467365451

关键词： frequency dividers Static frequency divider Double heterojunction bipolar transistors Capacitors FILM RESISTORS THIN FILM RESISTORS

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Influence of SiH4 flow rate on GaN films with in-situ SiNx mask on sapphire surface

Influence of SiH4 flow rate on GaN films with in-situ SiNx m...

引用

3rd International Conference on Materials science and Manufacturing, ICMSM 2014

作者： Li, Zhong Hui Peng, Da Qing Luo, Wei Ke Li, Liang Zhang, Dong Guo Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

ISBN: (纸本)9783038350460

Sapphire substrate was treated by SiH4 under NH3 atmosphere before GaN growth and nano-size islands SiNx mask was formed on the substrate. Properties of GaN films were investigated by high resolution X-ray diffraction, photoluminescence and transmission electron microscopy. The results indicated that the SiH4 flow rate is an important factor affecting the size and density of SiNx mask besides SiH4 treatment time. The GaN films grown on the SiNx-patterned sapphire substrate revealed an epitaxial lateral overgrowth mode, which affected 3D to 2D growth time and the microstructures of GaN films. The lowest FWHM value of (102) rocking curve was 286 arcsec. as the SiH4 flow rate of 0.5sccm, with the calcultated edge-type dislocations density of 4.28×109cm-2. © (2014) Trans Tech Publications, Switzerland.

关键词： X ray diffraction

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Modeling Techniques for Graphene field-effect transistors

Modeling Techniques for Graphene field-effect transistors

引用

2015 International Conference on Communication Problem-Solving(ICCP)

作者： Haiyan Lu Yun Wu Shuai Huo Yuehang Xu Yuechan Kong Tangshen Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute University of Electronic Science and Technology of China

ISBN: (纸本)9781467365451

This paper presents a hybrid-π equivalent circuit extract method for graphene field-effect transistors up to 66 GHz. Because the G-FET channel cannot be pinched off, the open and short structures are used to remove parasitic element of the pad. The intrinsic elements of the model parameters are extracted from measured S-parameters directly. The model is verified with experiments and simulations, and good agreements are observed. The model will provide some insights and guidance for the practical use of the GFETs and can be embedded in circuit simulation tools.

关键词： FET Modeling Techniques for Graphene field-effect transistors Graphene

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Simulation, fabrication and characterization of 6500V 4H-SiC JBS diode

Simulation, fabrication and characterization of 6500V 4H-SiC...

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2013 International Conference on Mechatronics and Semiconductor Materials, ICMSCM 2013

作者： Huang, Run Hua Tao, Yong Hong Chen, Gang Bai, Song Li, Rui Li, Yun Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9783037859391

4H-SiC JBS diode with breakdown voltage higher than 6.5 kV has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper, the simulation, the fabrication, and the electrical characteristics of 4H-SiC JBS diode were reported. The drift layer thickness and doping are 55 μm and 9×1014 cm-3 respectively. 60 floating guard rings edge were fabricated as termination. The on-state voltage was 4 V at JF = 7A. © (2014) Trans Tech Publicutions, Switzerland.

关键词： Silicon carbide

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Development of self-aligned process to decrease gate length in recessed SiC SIT

Development of self-aligned process to decrease gate length ...

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2014 International Conference on Manufacturing technology and Electronics Applications, ICMTEA 2014

作者： Chen, Gang Bai, Song Wang, Lin Tao, Yong Hong Liu, Haiqi Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9783038353287

Because of difficulty in deep ion implantation, the recessed gate structure has been favored in SiC SIT. In order to improve the frequency, it is a good method to decrease the gate length by eliminating the side wall ion implantation affection. We developed normally-on RF 4H-SiC SIT with high small signal gain. The effect of forming the side wall protection between the source mesa and the gate area was simulated. © (2014) Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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High-Performance Monolayer WS2 Field-effect Transistors on High-κ Dielectrics

High-Performance Monolayer WS2 Field-effect Transistors on H...

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The 6th International Conference on Nanoscience & technology, China 2015

作者： Yang Cui Run Xin Zhihao Yu Yiming Pan Zhun-Yong Ong Xiaoxu Wei Junzhuan Wang Yun Wu Tangsheng Chen Yi Shi Baigeng Wang Yong-Wei Zhang Gang Zhang Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineeringand Collaborative Innovation Center of Advanced MicrostructuresNanjing University School of Physics Nanjing University Institute of High Performance Computing Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute

WS2 is an attractive two-dimensional semiconductor material for electronic and optoelectronic device applications due to its high phonon limited mobility compared to other transition metal dichalcogenides. The measured field-effect mobility thus far, however, is much smaller than theoretical predictions, dominated by extrinsic factors including charge traps and impurities. Here, we report that the combination of high-quality Al2O3 dielectric substrate and thiol chemistry passivation could effectively reduce the interface traps and Coulomb impurities, leading to a significant improvement of device performances. Especially, metallic transport is observed at higher carrier density and low temperature. Moreover, through repairing sulfur vacancies, record high mobility is reached at room temperature(83 cm2V-1s-1) and low temperature(337 cm2V-1s-1). Furthermore, we develop a theoretical model for explaining charge transport in the monolayer WS2. Our work provides a viable route towards studying intrinsic charge transport in monolayer WS2 devices.

关键词： tungsten disulfide(WS2),transition metal dichalcogenides(TMDs),mobility,interface

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Design of single crystal silicon based RF MEMS switch with high contact force 3

Design of single crystal silicon based RF MEMS switch with h...

引用

3rd Asia-Pacific Conference on Antennas and Propagation, APCAP 2014

作者： Di, Mei Jing, Wu YuanWei, Yu PeiRan, Zhang Jian, Zhu NanJing Electronic Devices Institute NanJing210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory NanJing210016 China

ISBN: (纸本)9781479943548

A metal contact RF MEMS switch based on single crystal silicon is presented in this article. Performance of the switch is demonstrated numerically in simulations. The mN-level contact and release forces are achieved. Pull-in voltage is calculated to be 40V. 1.5mN contact force and 1.2mN release force are achieved when actuation voltage is 50V. The isolation and insertion loss are better than -30.8dB and -0.09dB respective between DC and 10GHz. The fabrication process is presented as well. © 2014 IEEE.

关键词： Silicon wafers

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High-Performance Monolayer WS2 Field-effect Transistors on High-κ Dielectrics

High-Performance Monolayer WS2 Field-effect Transistors on H...

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The 6th International Conference on Nanoscience and technology, China 2015 (第六届中国国际纳米科学技术会议)

作者： Yang Cui Run Xin Zhihao Yu Yiming Pan Zhun-Yong Ong Xiaoxu Wei Junzhuan Wang Yun Wu Tangsheng Chen Yi Shi Baigeng Wang Yong-Wei Zhang Gang Zhang Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineeringand School of Physics Nanjing UniversityNanjing 210093P.R.China Institute of High Performance Computing 1 Fusionopolis Way138632Singapore Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D

关键词： tungsten disulfide (WS2) transition metal dichalcogenides (TMDs) mobility interface

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Influence of SiH4 treatment time on the properties of GaN films grown on in-situ SiNx patterned sapphire substrate

Influence of SiH4 treatment time on the properties of GaN fi...

引用

International Conference on Solid-State and integrated Circuit technology

作者： Daqing Peng Zhonghui Li Dongguo Zhang Chuanhao Li Liang Li Xun Dong Jinyu Ni Lei Pan Weike Luo Science and Technology on Monolithic Integrated Circuits Nanjing Electronic Devices Institute Nanjing CHINA

ISBN: (纸本)9781479932849

Sapphire substrate was treated by SiH 4 under NH 3 atmosphere and nano-size islands SiN x mask was formed on the surface. GaN films were grown on the SiN x -patterned sapphire substrates to form GaN/SiN x /Al 2 O 3 structure. The influence of SiH 4 treatment time on crystalline quality and luminance properities of GaN films were studied. The lowest density of screw and edge type dislocations of 1.3×10 8 cm -2 and 5.0×10 9 cm -2 was got by SiH 4 treatment time of 120s, together with the lowest FWHM of GaN PL spectra of 5.4nm. The result indicated that SiH 4 treatment time could affect the size and density of SiN x islands. The SiN x mask with modified SiH 4 treatment time increased 3D to 2D growth time of high temperature GaN, which was the major factor improving the crystalline quality of GaN films.

关键词： Gallium nitride Films Substrates Temperature measurement Fasteners X-ray diffraction Atmosphere

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