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21st International Conference on Miniaturized systems for Chemistry and Life sciences, microTAS 2017

作者： Hun, Tingting Liu, Yaoping Guo, Yechang Liu, Xiaoyi Wang, Wei Sun, Yan Fan, Yubo School of Biological Science and Medical Engineering Beihang University Key Laboratory for Biomechanics and Mechanobiology of Ministry of Education Beijing100191 China Institute of Microelectronics Peking University Beijing100871 China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing100871 China Innovation Center for Micro-Nano-electronics and Integrated System Beijing100871 China State Key Laboratory of Transducer Technology Chinese Academy of Sciences Shanghai200050 China

ISBN: (纸本)9780692941836

Investigations on single-cell level are significant in cellular researches, and the captured of single cell have been reported by many researchers. However, there is still a lack of effective methods to realize high-throughput cell capture and arrangement simultaneously. In this paper, we compared three micropattern methods for high-throughput cell capture and arrangement, and we found a micropore-arrayed membrane based micropattern method could reach efficiency higher than 90%. © 17CBMS-0001.

关键词： Cytology

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"Zero change" platform for monolithic back-end-of-line integration of phase change materials in silicon photonics

arXiv

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arXiv 2023年

作者： Wei, Maoliang Xu, Kai Tang, Bo Li, Junying Yun, Yiting Zhang, Peng Wu, Yingchun Bao, Kangjian Lei, Kunhao Chen, Zequn Ma, Hui Sun, Chunlei Liu, Ruonan Li, Ming Li, Lan Lin, Hongtao State Key Laboratory of Modern Optical Instrumentation Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province College of Information Science and Electronic Engineering Zhejiang University Hangzhou310027 China Institute of Microelectronics the Chinese Academy of Sciences Beijing100029 China Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Hangzhou310024 China Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province School of Engineering Westlake University Zhejiang Hangzhou310030 China Institute of Advanced Technology Westlake Institute for Advanced Study Zhejiang Hangzhou310024 China State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China

Monolithic integration of novel materials for unprecedented device functions without modifying the existing photonic component library is the key to advancing heterogeneous silicon photonic integrated circuits. To achieve this, the introduction of a silicon nitride etching stop layer at selective area, coupled with low-loss oxide trench to waveguide surface, enables the incorporation of various functional materials without disrupting the reliability of foundry-verified devices. As an illustration, two distinct chalcogenide phase change materials (PCM) with remarkable nonvolatile modulation capabilities, namely Sb2Se3 and Ge2Sb2Se4Te1, were monolithic back-end-of-line integrated into silicon photonics. The PCM enables compact phase and intensity tuning units with zero-static power consumption. Taking advantage of these building blocks, the phase error of a push-pull Mach-Zehnder interferometer optical switch could be trimmed by a nonvolatile phase shifter with a 48% peak power consumption reduction. Mirco-ring filters with a rejection ratio >25dB could be applied for >5-bit wavelength selective intensity modulation, and waveguide-based >7-bit intensity-modulation photonic attenuators could achieve >39dB broadband attenuation. The advanced "Zero change" back-end-of-line integration platform could not only facilitate the integration of PCMs for integrated reconfigurable photonics but also open up the possibilities for integrating other excellent optoelectronic materials in the future silicon photonic process design kits. © 2023, CC BY.

关键词： Selenium compounds

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Exceptional-Surface- Tailored Robust microlaser

Exceptional-Surface- Tailored Robust Microlaser

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Conference on Lasers and Electro-Optics (CLEO)

作者： Kun Liao Yangguang Zhong Zhuochen Du Guodong Liu Chentong Li Xianxin Wu Chunhua Deng Cuicui Lu Xingyuan Wang Che Ting Chan Qinghai Song Shufeng Wang Xinfeng Liu Xiaoyong Hu Qihuang Gong Department of Physics State Key Laboratory for Mesoscopic Physics Collaborative Innovation Center of Quantum Matter Beijing Academy of Quantum Information Sciences Nano-optoelectronics Frontier Center of Ministry of Education Peking University Beijing China CAS Key Laboratory of Standardization and Measurement for Nanotechnology CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology Beijing China State Key Laboratory on Tunable laser Technology Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System Harbin Institute of Technology (Shenzhen) Shenzhen China Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurements of Ministry of Education Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems School of Physics Beijing Institute of Technology Beijing China College of Mathematics and Physics Beijing University of Chemical Technology Beijing China Department of Physics The Hong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong China Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan Shanxi China Peking University Yangtze Delta Institute of Optoelectronics Nantong Jiangsu China

We report a scalable strategy to realize a robust on-chip integrated microlaser source with simultaneous in-plane emission, linewidth compression, and pump energy utilization improvement based on different orders of e... 详细信息

ISBN: (纸本)9798350369311

关键词： Lasers and electrooptics system-on-chip Pump lasers Electro-optical waveguides

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Structural disorder by octahedral tilting in inorganic halide perovskites: New insight with Bayesian optimization

arXiv

引用

arXiv 2023年

作者： Li, Jingrui Pan, Fang Zhang, Guo-Xu Liu, Zenghui Dong, Hua Wang, Dawei Jiang, Zhuangde Ren, Wei Ye, Zuo-Guang Todorović, Milica Rinke, Patrick Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education International Center for Dielectric Research School of Electronic Science and Engineering International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi’an Jiaotong University Xi’an710049 China MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage School of Chemistry and Chemical Engineering Harbin Institute of Technology Harbin150001 China Key Laboratory for Physical Electronics and Devices of the Ministry of Education Shaanxi Key Lab of Information Photonic Technique School of Electronic Science and Engineering Xi’an Jiaotong University Xi’an710049 China School of Microelectronics Key Lab of Micro-Nano Electronics and System Integration of Xi’an City Xi’an Jiaotong University Xi’an710049 China State Key Laboratory for Manufacturing Systems Engineering International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi’an Jiaotong University Xi’an710049 China Department of Chemistry and 4D LABS Simon Fraser University British Columbia BurnabyV5A 1S6 Canada Department of Mechanical and Materials Engineering University of Turku TurkuFI-20014 Finland Department of Applied Physics Aalto University AALTO P.O.Box 11100 FI-00076 Finland

Structural disorder is common in metal-halide perovskites and important for understanding the functional properties of these materials. First-principles methods can address structure variation on the atomistic scale, but they are often limited by the lack of structure-sampling schemes required to characterize the disorder. In this work, structural disorder in the benchmark inorganic halide perovskites CsPbI3 and CsPbBr3 is computationally studied in terms of the three octahedral-tilting angles. The consequent variation in energetics and properties are described by three-dimensional potential-energy surfaces (PESs) and property landscapes, delivered by Bayesian Optimization Structure Search method with integrated density-functional-theory (DFT) calculations. The rapid convergence of the PES with about 200 DFT data points in three-dimensional searches demonstrates the power of active learning and strategic sampling with Bayesian optimization. Further analysis indicates that disorder grows with increasing temperature, and reveals that the materials band gap at finite temperatures is a statistical mean over disordered structures. © 2023, CC BY.

关键词： Lead compounds

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Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline𝛽β-Ga_(2)O_(3)thin film on SiC

引用

Fundamental Research 2021年第6期1卷 691-696页

作者： Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang Huarui Sun Ruijie Qian Zhenghua An Fengwen Mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Collaborative Research Center Meisei UniversityHinoJapan Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of ***,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to *** overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC *** of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 *** thermoreflectance measurements were employed to investigate the thermal *** thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing *** barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk *** thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.

关键词： Thermal management Heterogeneous integration Wafer scale𝛽β-Ga_(2)O_(3)on SiC Ion-cutting technique Schottky barrier diodes(SBDs) Transient thermoreflectance(TTR) measurements

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Correlations between polarization and structural information of supertetragonal PbTiO3

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Physical Review B 2022年第2期105卷 024106-024106页

作者： Feng Zhang Jiale Zhang Hongmei Jing Zhipeng Li Dawei Wang Chun-Lin Jia School of Microelectronics and State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an 710049 China Key Lab of Micro-Nano Electronics and System Integration of Xi'an City Xi'an Jiaotong University Xi'an 710049 China School of Physics and Information Technology Shaanxi Normal University Xi'an 710062 China School of Materials Science and Engineering University of Science and Technology Beijing Beijing 100083 China Ernst Ruska Center for Microscopy and Spectroscopy with Electrons Research Center Jülich D-52425 Jülich Germany

The huge axial ratio of supertetragonal perovskites can induce large polarization due to the coupling between the unit cell and ion displacements, which often results in higher Curie temperature or better ferroelectric properties. With the progress of vertical strain engineering, experimentally available supertetragonal PbTiO3 raises much interest in the relation between its intrinsic polarization and structural characteristics, such as the axial ratio and ion displacements that can be obtained with a high-resolution (scanning) transmission electron microscope nowadays. However, the interpretation and use of such obtained structural information are not without peril. Here, employing first-principles calculations, we report on the relationship between the polarization and the structural information for supertetragonal PbTiO3. Our investigation shows that, unlike normal PbTiO3, the strong sublinear correlation raises the difficulty to quantitatively estimate the spontaneous polarization for the axial ratio larger than 1.15. In addition, the relative displacement between cations (i.e., Pb and Ti) proves to be an unsuitable structural parameter to determine the spontaneous polarization, emphasizing the importance of obtaining the positions of anions, albeit presumably more difficult, along with cations.

关键词： Ferroelectricity Ferroelectrics Perovskites Density functional calculations First-principles calculations Scanning transmission electron microscopy Strain engineering

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Room-temperature waveguide integrated quantum register in a semiconductor photonic platform

arXiv

引用

arXiv 2023年

作者： Hu, Haibo Zhou, Yu Yi, Ailun Bao, Tongyuan Liu, Chengying Luo, Qi Zhang, Yao Wang, Zi Li, Qiang Lu, Dawei Liu, Zhengtong Xiao, Shumin Ou, Xin Song, Qinghai Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems Harbin Institute of Technology Shenzhen518055 China Pengcheng Laboratory Shenzhen518055 China Shenzhen518045 China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China The Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China Institute of Advanced Semiconductors Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang Hangzhou311200 China State Key Laboratory of Silicon Materials and Advanced Semiconductors School of Materials Science and Engineering Zhejiang University Hangzhou310027 China Shenzhen Institute for Quantum Science and Engineering Department of Physics Southern University of Science and Technology Shenzhen518055 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China

Quantum photonic integrated circuits are reshaping quantum networks and sensing by providing compact, efficient platforms for practical quantum applications. Despite continuous breakthroughs, integrating entangled registers into photonic devices on a CMOS-compatible platform presents significant challenges. Herein, we present single electron-nuclear spin entanglement and its integration into a silicon-carbide-on-insulator (SiCOI) waveguide. We demonstrate the successful generation of single divacancy electron spins and near-unity spin initialization of single 13C nuclear spins. Both single nuclear and electron spin can be coherently controlled and a maximally entangled state with a fidelity of 0.89 has been prepared under ambient conditions. Based on the nanoscale positioning techniques, the entangled quantum register has been further integrated into SiC photonic waveguides for the first time. We find that the intrinsic optical and spin characteristics of the register are well preserved and the fidelity of the entangled state remains as high as 0.88. Our findings highlight the promising prospects of the SiCOI platform as a compelling candidate for future scalable quantum photonic applications. Copyright © 2023, The Authors. All rights reserved.

关键词： Silicon on insulator technology

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Flexible Piezo-Mems Fabrication Process Based on Thinned Piezoelectric Thick Film

Flexible Piezo-Mems Fabrication Process Based on Thinned Pie...

引用

IEEE International Conference on micro Electro Mechanical systems

作者： Zhiran Yi Wenming Zhang Bin Yang The National Key Laboratory of Science and Technology on Micro/Nano Fabrication Shanghai Jiao Tong University Shanghai CHINA The State Key Laboratory of Mechanical System and Vibration School of Mechanical Engineering Shanghai Jiao Tong University Shanghai CHINA

ISBN: (数字)9781665419123

ISBN: (纸本)9781665430241

High-temperature sintering is critical fabrication process for piezoelectric ceramics to reach a high quality. Generally, the sintering process is not employed in the fabrication process of piezoelectric thin film due to the low melting temperature bonding components or substrates. Piezoelectric thick film process based on mechanical thinning technology is becoming a key technology to develop high-quality piezoelectric ceramics in piezo-MEMS devices. Here, piezoelectric film transferring process, bonding process and laser cutting technology are employed for the flexible piezo-MEMS fabrication process, which is promising to develop high performance flexible piezo-MEMS devices, such flexible piezoelectric tactile sensors, flexible piezoelectric energy harvesters or flexible piezoelectric pressure sensors.

关键词： Fabrication Thick films Ceramics Piezoelectric devices Bonding Surface treatment Substrates

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Water vapor-assisted synthesis of highly crystalline boron nitride aerogels for enhancing thermal management and mechanical performance

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Ceramics International 2025年

作者： Zhenlong Yao Jing Lin Rui Zhang Xiangqian Gao Tiantian Deng Chao Yu Menglin Chen Chengchun Tang Yang Huang Hebei Key Laboratory of Boron Nitride Micro and Nano Materials School of Materials Science and Engineering Hebei University of Technology Tianjin 300130 PR China Tianjin Key Laboratory of Aviation Fire Protection System Tianjin 300308 PR China

Boron nitride (BN) aerogels, characterized by three-dimensional porous networks, combine the exceptional properties of hexagonal BN (h-BN) with low density and high porosity, making them promising for applications in adsorption, catalysis, thermal management, and composites. Despite advances in scalable production of BN aerogels through fiber assembly using melamine diborate (M·2B) precursors, synthesizing high-performance BN aerogels remains challenging. In this study, a high-temperature pyrolysis process, featuring a unique water vapor-pretreatment step, has been employed to produce high-quality BN aerogel composed of interconnected BN microfibers. At 600 °C, the M·2B molecular crystal precursor undergoes a rapid decarbonization process, while the introduction of water vapor pretreatment can effectively enhance decarbonization efficiency, thereby enabling the synthesis of highly crystalline BN aerogels. As the water vapor pretreatment time increasing, the crystallization of BN microfibers within the aerogel has been significantly improved, resulting in superior thermal stability, oxidation resistance, thermal conductivity and mechanical properties of BN aerogels. Notably, the BN aerogel prepared after 60 min's water vapor treatment (BN-60) demonstrates exceptional thermal stability and oxidation resistance with minimal mass loss at high temperatures.

关键词： Antioxidation BN aerogel High crystallization Water vapor-assisted pretreatment

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Magnetic order in XY-type antiferromagnetic monolayer CoPS3 revealed by Raman spectroscopy

引用

Physical Review B 2021年第23期103卷 235411-235411页

作者： Qiye Liu Le Wang Ying Fu Xi Zhang Lianglong Huang Huimin Su Junhao Lin Xiaobin Chen Dapeng Yu Xiaodong Cui Jia-Wei Mei Jun-Feng Dai Shenzhen Institute for Quantum Science and Engineering and Department of Physics Southern University of Science and Technology Shenzhen 518055 China Department of Physics The University of Hong Kong Pokfulam 999077 Hong Kong Shannxi Institute of Flexible Electronics Northwestern Polytechnical University Xi'an 710072 China School of Science and State Key Laboratory on Tunable Laser Technology and Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System Harbin Institute of Technology Shenzhen 518055 China Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices Southern University of Science and Technology Shenzhen 518055 China Shenzhen Key Laboratory of Quantum Science and Engineering Shenzhen 518055 China

Mermin-Wagner-Coleman theorem predicts no long-range magnetic order at finite temperature in the two-dimensional (2D) isotropic systems, but it does predict a quasi-long-range order with a divergent correlation length at the Kosterlitz-Thouless (KT) transition for planar magnets. As a representative of two-dimensional planar antiferromagnets, single-layer CoPS3 carries the promise of monolayer antiferromagnetic platforms for the ultimately thin spintronics. Here, with the aid of magnetostriction which is sensitive to the local magnetic order, we observe the signature phonon mode splitting of below TKT in monolayer CoPS3. The two-magnon signal in the monolayer one manifests the associated magnetic transition. It indicates the quasi-long-range order in an exact 2D planar spin model below KT phase transition. The ratio (J′/J) between the interlayer and intralayer interactions, which characterizes the 2D behaviors, is evaluated to be around 0.03. Our results provide an efficient method to detect the quasi-long-range antiferromagnetic ordering in the two-dimensional magnets down to the monolayer limit.

关键词： Antiferromagnetism Magnetostriction Antiferromagnets Transition metal dichalcogenides Raman spectroscopy

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