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International Conference on Vacuum Electronics

作者： Xianbao Shi Laxma Reddy Billa Yubin Gong Muhammad Nadeem Akram Xuyuan Chen Department of Micro-and Nano-system Technology (IMST) Buskerud and Vestfold University College Norway National Key Laboratory of Science and Technology on Vacuum Electronics University of Electronic Science and Technology of China Chengdu Sichuan China

ISBN: (纸本)9781467392181

In this paper, an E-plane bending input/output structure in terahertz staggered double vane traveling wave tube (TWT) is designed. This structure is considered more suitable for fabrication using the MEMS technology. The simulation results show that this structure also possesses a low reflection coefficient. Moreover, the optimized PIC simulation results are given in this paper.

关键词： Attenuators Blades Electron tubes Couplers micromechanical devices Fabrication Reflection coefficient

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Design of a graphene capacitive pressure sensor for ultra-low pressure detection

Design of a graphene capacitive pressure sensor for ultra-lo...

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IEEE International Conference on Nano/micro Engineered and Molecular systems (NEMS)

作者： Yangxi Zhang Yiming Gui Fanrui Meng Chengchen Gao Yilong Hao Institute of Microelectronics Peking University Beijing China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing China Device and system Collaborative Innovation Center for Micro/Nano Fabrication Beijing China Innovation Center for MicroNanoelectronics and Integrated System Beijing China

ISBN: (纸本)9781509019489

This paper reports the design and theoretical calculation of a capacitive ultra-low pressure sensor, which is based on circular suspend graphene diaphragm array. The atom scale thickness and high mechanical strength of suspend graphene diaphragm both contribute to ultra-low pressure measure range. As the size of single suspend graphene diaphragm is limited by fabrication process, a parallel connected sensor array is designed to achieve detectable capacitance change and redundancy. In calculation, a sensor array with 40,000 5μm radius suspend graphene diaphragm cells in 4mm×4mm size can provide 288fF/Pa sensitivity to pressure load.

关键词： Graphene Capacitance Pressure sensors Sensor arrays Films Electrodes Sensitivity

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Intermediate layer bonding for silicon and piezoelectric on UV Adhesive

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Key Engineering Materials 2015年 645卷 86-91页

作者： Xuanyang, Wang Liu, Huan Lei, Rui Liu, Weiguo Xi'An Technological University Micro-optoelectronic System Labs Xi'an China Science and Technology on Low-light-level Night Vision Laboratory Xi'an China

During making the surface acoustic wave devices and integrated circuit hybrid integrated electronics, it needs to put the piezoelectric crystal and silicon wafer bonding together. By selecting a certain wavelengths of UV curing adhesive, then exposing with 300-436nm wavelength of exposure machine, 8mmÃ-8mm bonding chips are got. Bonding LiNbO3, quartz and silicon wafer respectively, measured maximum shear force is 116.2 N and 117.9 N with shear force test machine. The fracture energy is 5.831 J/m2 measured by crack-opening method test LiNbO3 bonding chips. The results show that piezoelectric crystal and silicon wafer bonding interface level off and the bonding of the middle layer thickness for about 3 microns observed the bonding section with SEM. © (2015) Trans Tech Publications, Switzerland.

关键词： Wafer bonding

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Reliable deposition of ultra-thin parylene

Reliable deposition of ultra-thin parylene

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IEEE International Conference on micro Electro Mechanical systems

作者： Wei Wang Dongyang Kang Wangzhi Dai Yu-Chong Tai Electrical Engineering Caltech CA USA National Key Laboratory of Science and Technology on Micro/Nano Fabrication Innovation Center for Micro-Nano-electronics and Integrated System Beijing China Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781509006090

This paper reports a novel and reliable process to prepare ultra-thin parylene film based on a principle combining both molecular effusion and diffusion. For the first time, a technique for the deposition of parylene film thinner than 20 nm in a highly controllable and repeatable way is developed. Parylene films with various thicknesses could also be prepared in a single deposition run by using this method. This technique holds promising potentials in extensive applications, such as protection/dielectric layer for needle electrodes and flexible electronics, semi-permeable membrane, and other polymer engineering.

关键词： Decision support systems micromechanical devices

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Fabrication of aluminum nitride films by reactive pulse DC magnetron sputtering for vibration energy harvester

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Key Engineering Materials 2015年 645卷 1133-1138页

作者： Shang, Zhengguo Li, Dongling Wang, Shengqiang National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology Chongqing University Chongqing China Microsystem Research Center Chongqing University Chongqing China

Aluminum nitride(AlN) film as a piezoelectric material has been used widely, particularly in vibration energy harvester due to its unique and enhanced properties such as high temperature resistance and compatibility with CMOS processes. In this work, AlN film with (002) preferred orientation was prepared on silicon wafers by pulse DC reactive magnetron sputtering(RMS), and the properties such as peak intensity, full width at half maximum (FWHM) and surface morphology were investigated by x-ray diffraction (XRD) and scanning electron microscopy (SEM). The preferred orientation was found to be sensitive to deposition conditions such as gas flow rate, power, bottom electrodes materials and substrates temperature. The results shows that the intensity was 1.1×105 counts, the FWHM was 1.9° when the temperature was 260°C. The film was used to fabricate the vibrated energy harvester successful and the power density reached about 3000uW/cm3 at the vibration frequency under 1g acceleration. © 2015 Trans Tech Publications, Switzerland.

关键词： Magnetron sputtering

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Fabrication of ultrasmooth polymer films by concentration control and spin speed adjustment

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Key Engineering Materials 2015年 645卷 330-334页

作者： Guo, Yan Liu, Weiguo Liu, Huan Zhou, Shun Wu, Lei Li, Fei Micro-optoelectrical System Laboratory Xi'an Technological University Xi'an Shaanxi710021 China Science and Technology on Low-Light-Level Night Vision Laboratory Xi'an Shaanxi710065 China

In order to obtain ultrasmooth polymer films, in combination with sacrificial layer a variety of impending structures in MEMS devices can be easily prepared. Two methods using polymer concentration control and spin speed adjustment to planarize polymer surface are presented. The influence of polymer concentration and spin speed on the effect of photoresist planarization is studied on. Through a large number of experiments, optimized process parameters are collected. It is found that the roughness was reduced effectively when the spin high speed was 5000rpm for 50 seconds under the condition of volume dilution ratio of 1:5. This process is able to produce a smooth surface structure. © (2015) Trans Tech Publications, Switzerland.

关键词： Polymer films

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Four-step FBAR Filters Design Method and SOI BOX Buffered Via-hole Etching Scheme

Four-step FBAR Filters Design Method and SOI BOX Buffered Vi...

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)

作者： GAO Yang CAI Xun HE Xuefeng Institute of Electronic Engineering China Academy of Engineering Physics State Key Laboratory of Particle Detection and Electronics Institute of High Energy PhysicsCAS School of Information Engineering Southwest University of Science and Technology National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology Chongqing University

In this paper, we present an easy to use 4-step design method for film bulk acoustic resonator(FBAR) filters, and demonstrated by a FDD-LTE band 7 FBAR Rx filter design case. According to the center frequency and bandwidth of FBAR filter, we determine thickness of each film in the FBAR film stack at the step 1. The step 2 gets the filter's circuit architecture. In the step 3, we obtain the active area of each FBAR unit. To get this, we made the resonance area value of series FBAR units and the ratio of resonance area value of parallel FBAR units and series FBAR units into two types of optimization parameters reasonably. Taking the given insertion loss and out-of-band rejection of filter as the optimization objective, we obtained the optimized values by the algorithm based on gradient in ADS software. The last step 4 aiming at minimizing filter passband ripple. In the design case, this aim is fulfilled by a novel FBARs' electrode layer thickness adjusting method, and intentionally slightly mismatches the series resonant frequency of the series FBAR units with the parallel resonant frequency of the parallel FBAR units. As in the design case results, a only 300 nm thick SiO 2 support layer need to survive the backside via-hole etching micro-fabrication process, so we proposed a buried oxide layer(BOX) buffered 2-step via-hole etching scheme, which taking advantage of the etching self-stop characteristic of BOX. Design case results show that insertion loss of the Rx filter is 0.6 d B, rejection in Tx frequency band is 40.4 d B and passband ripple is 0.4 d B. Thus we validate the feasibility of the design method.

关键词： Four-step FBAR Filters Design Method and SOI BOX Buffered Via-hole Etching Scheme filter SOI

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Safety Analysis on a Novel Solid State Thermal Mechanical Discriminator

Safety Analysis on a Novel Solid State Thermal Mechanical Di...

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)

作者： JIA Le GAO Yang WANG Yu-hang LV Jun-guang School of Information Engineering Southwest University of Science and Technology Institute of Electronic Engineering China Academy of Engineering Physics National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology Chongqing University State Key Laboratory of Particle Detection and Electronics Institute of High Energy Physics CAS

In order to strengthen safety in abnormal environment, we analyze safety on the Solid State Thermal Mechanical Discriminator(SSTMD). Firstly, we calculate the number of Thermo-Mechanical Switches(TMSs) by means of a method with probability theory when the probability of unintentional unlock on the SSTMD is less than 10-6. Then the probability of safety failure on the SSTMD is estimated by analyzing the relationship between probability of a TMS from OFF state to ON state and temperature in abnormal high temperature environment. We put forward two design criteria for the layout of the SSTMD by analyzing working principle of the Trap TMSs played a role as intrinsic thermal weaklink to reduce the probability of safety failure on SSTMD in abnormal high temperature environment. There are two design rules to enhance the thermal weaklink effect. Firstly, TMSs can be classed as two groups: the Route TMSs and the Trap TMSs, and those two class TMSs should be evenly layout as far as possible, to obtain equal probability of contacting hotspot for the Trap TMSs to work in abnormal high-temperature environment. Secondly, we choose lower melting point of materials on the Trap TMSs to make them preemptively switch to the ON state before the Route TMSs. Additionally, we find the intrinsic shock weaklink effect in the Route TMSs, and enhanced this beneficial effect by etching an annular groove on the back of insulating film membrane of the Route TMSs, to ensure the safety of the SSTMD in abnormal shock/vibration environments. By revealing and taking advantage of those two weaklink effects, we get a novel SSTMD architecture with integrated thermal and shock weaklink functions, which would be quite suitable for the high consequence system applications.

关键词： TMS Safety Analysis on a Novel Solid State Thermal Mechanical Discriminator

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Light trapping characteristics of glass substrate with hemisphere pit arrays in thin film Si solar cells

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Chinese Physics B 2015年第4期24卷 16-21页

作者：陈乐王庆康王阳培华黄堃沈向前 Key Laboratory for Thin Film and Micro-fabrication of the Ministry of Education Department of Microelectronics and NanoscienceShanghai Jiao Tong University College of Physical Science and Technology Engineering Guangxi Universities Key Laboratory of Complex System Optimization and Big Data Processing Yulin Normal University

In this paper, the light trapping characteristics of glass substrate with hemisphere pit （HP） arrays in thin film Si solar cells are theoretically studied via a numerical approach. It is found that the HP glass substrate has good antireflection properties. Its surface reflectance can be reduced by - 50% compared with planar glass. The HP arrays can make the unabsorbed light return to the absorbing layer of solar cells, and the ratio of second absorption approximately equals 30%. Thus, the glass substrate with the hemisphere pit arrays （HP glass） can effectively reduce the total reflectivity of a solar celt from 20% to 13%. The lip glass can also prolong the optical path length. The numerical results show that the total optical path length of the thin film Si solar cell covered with the HP glass increases from 2ω to 409. These results are basically consistent with the experimental results.

关键词： numerical approach light trapping hemispherical pit （HP） optical path length solar cells

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H-plane Loaded and Phase Velocity Tapered SWS for Improved Performance of TWT THz Sources

H-plane Loaded and Phase Velocity Tapered SWS for Improved P...

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2016 IEEE 9th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies

作者： Xuyuan Chen Laxma R.Billa Xianbao Shi M.Nadeem Akram Department of Micro- and Nano-System Technology University College of Southeast Norway State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Laser SpectroscopyShanxi University Vacuum Electronics National Laboratory School of Physical ElectronicsUniversity of Electronic Science and Technology of China

The design optimization and simulation for high performance of two types of slow wave structures(SWS) for micro-electro-mechanical system(MEMS) terahertz(THz)sources are presented,e.g.,THz staggered double vane(SDV)traveling wave tube(TWT) working at center frequency of 220 GHz,H-plane and E-plane loaded(HEL) rectangular TWT working at center frequency of 400 *** structures are able to realize a larger interaction impedance,thereby resulting in higher gain and improved output power of the *** further enhance the energy transferring between the electron beam and THz wave,the maximum length of the interaction section can be extended using the phase velocity tapering technique,where the spent electron beam energy can be reused by resynchronizing the phase velocity of the THz signal with electron velocity at the second section of the *** an achievement,improved power of more than 50%is achieved over the operated bandwidth for both *** designs have considered the LIGA fabrication for these vacuum MEMS THz sources.

关键词： Terahetz TWT Phase velocity tapered technology H-loaded and E-loaded corrugation

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