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Single Cu nanowire assembled by microdroplet dielectrophoresis on ultrahigh tensible microelectrodes

Chinese science Bulletin 2014年第7期59卷 577-584页

作者： Chaolei Huang Hongjiang Zeng Xiaojun Tian Jie Liu Zaili Dong Tie Li Yuelin Wang State Key Laboratory of Robotics Shenyang Institute of Automation Chinese Academy of Sciences University of Chinese Academy of Sciences Science and Technology on Micro-system Laboratory and State Key Laboratories of Transducer Technology Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

At present,study on dynamic tensile properties and atomic chain fabrication of single nanowire,for understanding its dynamic tensile properties and unique physical properties of atomic chain to fabricate atom scale devices,is one of frontier research issues in nanoscale ***,how to assemble single nanowire on a tensible microstructure becomes one of the most difficult problems,which severely restricts the development of this research *** this paper,after the ultrahigh tensible microelectrode chip is fabricated by MEMS technology,hexamethyldisilazane is utilized to improve hydrophobicity of the chip,and then a microdroplet dielectrophoresis experimental platform and technology is developed to assemble single nanowire on the sensible *** results show that accurate and efficient assembly of single Cu nanowire is realized,which contribute greatly to the further research of dynamic tensile properties and atomic chain *** for guiding the assembly experiments,finite element technology is also utilized to analyze the local microelectro field around the microelectrodes during dieletrophoresis experiments.

关键词：电泳实验纳米线微电极组装介电微滴动态拉伸性能 MEMS技术

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Review Article: Recommended reading list of early publications on atomic layer deposition - Outcome of the "virtual Project on the History of ALD"

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Journal of Vacuum science and technology A: Vacuum, Surfaces and Films 2017年第1期35卷

作者： Ahvenniemi, Esko Akbashev, Andrew R. Ali, Saima Bechelany, Mikhael Berdova, Maria Boyadjiev, Stefan Cameron, David C. Chen, Rong Chubarov, Mikhail Cremers, Veronique Devi, Anjana Drozd, Viktor Elnikova, Liliya Gottardi, Gloria Grigoras, Kestutis Hausmann, Dennis M. Hwang, Cheol Seong Jen, Shih-Hui Kallio, Tanja Kanervo, Jaana Khmelnitskiy, Ivan Kim, Do Han Klibanov, Lev Koshtyal, Yury Krause, A. Outi I. Kuhs, Jakob Kärkkänen, Irina Kääriäinen, Marja-Leena Kääriäinen, Tommi Lamagna, Luca Lapicki, Adam A. Leskelä, Markku Lipsanen, Harri Lyytinen, Jussi Malkov, Anatoly Malygin, Anatoly Mennad, Abdelkader Militzer, Christian Molarius, Jyrki Norek, Malgorzata Özgit-Akgün, Çaǧla Panov, Mikhail Pedersen, Henrik Piallat, Fabien Popov, Georgi Puurunen, Riikka L. Rampelberg, Geert Ras, Robin H. A. Rauwel, Erwan Roozeboom, Fred Sajavaara, Timo Salami, Hossein Savin, Hele Schneider, Nathanaelle Seidel, Thomas E. Sundqvist, Jonas Suyatin, Dmitry B. Törndahl, Tobias Van Ommen, J. Ruud Wiemer, Claudia Ylivaara, Oili M. E. Yurkevich, Oksana Department of Chemistry Aalto University P.O. Box 16100 EspooFI-00076 Finland Department of Materials Science and Engineering Stanford University StanfordCA94305 United States Department of Materials Science and Engineering Aalto University School of Chemical Technology P.O. Box 16200 AaltoFI-00076 Finland Institut Européen des Membranes IEM UMR-5635 Université de Montpellier ENSCM CNRS Place Eugène Bataillon Montpellier Cedex 5F-34095 France Industrial Focus Group XUV Optics University of Twente Enschede7522 ND Netherlands Institute of Solid State Physics Bulgarian Academy of Sciences 72 Tzarigradsko chaussee blvd. Sofia1784 Bulgaria CEPLANT Masaryk University Kotlářská 267/2 Brno611 37 Czech Republic School of Mechanical Science and Engineering School of Optical and Electronic Information Huazhong University of Science and Technology 1037 Luoyu Road Wuhan Hubei430074 China Univ. Grenoble Alpes CNRS SIMAP GrenobleF-38000 France Department of Solid State Sciences CoCooN Ghent University Krijgslaan 281/S1 Ghent9000 Belgium Inorganic Materials Chemistry Ruhr University Bochum Bochum44801 Germany Institute of Chemistry St.-Petersburg State University Universitetskaya emb. 7/9 St.-Petersburg199034 Russia Institute for Theoretical and Experimental Physics Bolshaya Cheremushkinskaya 25 Moscow117218 Russia Fondazione Bruno Kessler Center for Materials and Microsystems Trento38123 Italy VTTFI-02044 Finland Lam Research Corporation TualatinOR97062 United States Department of Materials Science and Engineering Inter-university Semiconductor Research Center College of Engineering Seoul National University Seoul08826 Korea Republic of Globalfoundries AlbanyNY12203 United States Department of Chemistry School of Chemical Engineering Aalto University P.O. Box 16100 AaltoFI-00076 Finland Åbo Akademi TurkuFI-20500 Finland Research and Education Center Nanotechnology Saint Petersburg Electrotechnical University LETI ul. Professora

Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing;the current list is an attempt to remedy this deficiency. © 2016 Author(s).

关键词： Atomic layer deposition

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The role of circulating tumor cells in predicting tumor response after preoperative chemo-radiation therapy for rectal cancer

The role of circulating tumor cells in predicting tumor resp...

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中华医学会第十一次全国放射肿瘤治疗学学术会议

作者： WEN JIE SUN CHUN PING JIA WEI QISHENG GANG LI ZHEN ZHANG Fudan University Shanghai Cancer Center Key Laboratories of Transducer Technology and Science and Technology on Micro-system Laboratory Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

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Theoretical framework for innovation design with optimised customization

Theoretical framework for innovation design with optimised c...

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4th International Conference on Frontiers of Manufacturing science and Measuring technology, ICFMM 2014

作者： Wang, Huan Huan Yang, Qing Ping College of Mechanical Engineering Tianjin University of Science and Technology Tianjin 300222 China Micro Optics Electronic Machine System Education Ministry Key Laboratory Tianjin University Tianjin 300072 China School of Engineering and Design Brunel University Uxbridge Middlesex UB8 3PH United Kingdom

ISBN: (纸本)9783038351924

Design is the core of innovation activity, and it aims to establish better and comprehensive qualities of products. It is also a process to explore and enhance the human experience. During decades of exploration and practice, designers have developed many effective design methods and methodologies. However, users always have more needs and higher expectations. How will the human needs develop in the future? What will the future design is? This paper discusses the relationship between the development of human needs and the process of product evolution, explores the future design trends and presents a theoretical framework for innovation design with optimised customization. © (2014) Trans Tech Publications, Switzerland.

关键词： Product design

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A new hybrid piezoelectric-electromagnetic micro vibration energy harvester

A new hybrid piezoelectric-electromagnetic micro vibration e...

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IEEE Conference on Electron Devices and Solid-State Circuits

作者： Hua Yu Jielin Zhou Wei Wang College of Optoelectronic Engineering Chongqing China Key Laboratory for Optoelectronic Technology & Systems Ministry of Education of China Chongqing China National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology Chongqing China

ISBN: (纸本)9781479923366

The paper presents a new hybrid micro piezoelectric-electromagnetic generator for vibration energy harvesting, which generates energy from low frequency and small amplitude vibration environment, using piezoelectric and electromagnetic conversion mechanisms. The paper outlines factors needed when designing the hybrid energy harvester, including the coupling mathematical model, the finite element analysis, optimization procedure and trade-offs. The proposed hybrid energy harvester is also fabricated and experimental results show that the device can generate an open-circuit voltage of 4.32V and produce a power of 13.47μW with an optimal resistive load of 403KΩ at 0.1 m/s 2 acceleration and 105.2 Hz frequency.

关键词： Materials Electromagnetics Arrays Resistance Coils

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New Trench gate LDMOS for low power applications

New Trench gate LDMOS for low power applications

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International Conference on Ion Implantation technology (IIT)

作者： Dawei Xu Xinhong Cheng Zhongjian Linyan Shen Chao Xia Duo Cao Li Zheng Yuehui Yu State Key Laboratory of Functional Materials for Informatics Chinese Academy of Science Shanghai China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Micro-system & Information Technology Chinese Academy of Science China

A trench gate SOI LDMOS with an oxide trench in the drift region and a trench source plate (TG-LDMOS) is proposed to obtain a high breakdown voltage (BV) and low specific on-resistance (R sp ) simultaneously. The oxide trench extends the drift region in the vertical direction and reshapes the electric field, resulting in reduced cell pitch and R sp . The trench source plate extends to the buried oxide layer (BOX) further enhances the RESURF effect and also works as a dielectric isolation trench. BV of 111V and R sp of 0.87mΩ·cm 2 are obtained for the TG-LDMOS with 3μm cell pitch. Compared with conventional LDMOS (C-LDMOS), R sp of the TG-LDMOS decreases by 63.8%, the transconductance(g m ) increases by 8.3% and the switching delay decreases by 32% at the same BV. Furthermore, the figure-of-merit (FOM=BV 2 /R sp ) of the TG-LDMOS equals to 14.6MW/cm 2 , exhibiting 172.7% improvement than that of C-LDMOS.

关键词： Logic gates Silicon-on-insulator Switches Silicon Delays Electric fields Dielectrics

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Calculation of surface acoustic waves in a multilayered piezoelectric structure

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Journal of Semiconductors 2013年第1期34卷 6-11页

作者：张祖伟温志渝胡晶 Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology Chongqing University National Center for International Research of Micro/Nano-System and New Material Technology Chongqing University Microsystem Research Center Chongqing University

The propagation properties of the surface acoustic waves（SAWs） in a ZnO-SiO2-Si multilayered piezoelectric structure are calculated by using the recursive asymptotic *** phase velocities and the electromechanical coupling coefficients for the Rayleigh wave and the Love wave in the different ZnO-SiO2-Si structures are calculated and *** Love mode wave is found to be predominantly generated since the c-axis of the ZnO film is generally perpendicular to the *** order to prove the calculated results,a Love mode SAW device based on the ZnO-SiO2-Si multilayered structure is fabricated by micromachining,and its frequency responses are *** experimental results are found to be mainly consistent with the calculated ones,except for the slightly larger velocities induced by the residual stresses produced in the fabrication process of the *** deviation of the experimental results from the calculated ones is reduced by thermal annealing.

关键词： SAW RAM multilayered structure

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Design of power management chip for piezoelectric energy harvesting

Design of power management chip for piezoelectric energy har...

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IEEE Conference on Electron Devices and Solid-State Circuits

作者： Hua Yu Shibo Yang Wei Wang College of Optoelectronic Engineering Chongqing University Chongqing China Ministry of Education of China The Key Laboratory for Optoelectronic Technology & Systems Chongqing China National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology Chongqing China

ISBN: (纸本)9781479923366

The paper proposes a complete energy harvesting solution integrated with a low-loss AC/DC rectifier and a high efficiency low dropout regulator (LDO) optimized for micro piezoelectric energy harvester. The AC/DC module converts AC into DC and then supplies power for the following LDO circuit module, through which the whole chip can obtain a stable 3.3V output voltage. A dynamic compensation mechanism is presented to improve the loop stability of LDO, which is easier to achieve high phase margin than traditional compensation strategy. The simulation results of LDO indicate that the typical dropout is 0.4mV with 1mA load current and 61mV with 150mA load current respectively, and the typical voltage line regulation error is 0.025%/V. In addition, the typical load regulation error was 0.00018%. The results demonstrate that the proposed chip meets the requirements of power supply for wireless sensor node (WSN).

关键词： Photonic band gap

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Fabrication of a microstrip patch antenna integrated in low-resistance silicon wafer using a BCB dielectric

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Journal of Semiconductors 2013年第10期34卷 72-75页

作者：王天喜韩梅徐高卫罗乐 Science and Technology on Micro-System Laboratory State Key Laboratory of Transducer TechnologyShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences University of Chinese Academy of Sciences

This paper demonstrates a technique for microstrip patch antenna fabrication using a benzocyclobutene （BCB） dielectric. The most distinctive feature of this method is that the antenna is integrated on a low-resistance silicon wafer, and is fully compatible with the microwave multi-chip module packaging process. Low-permittivity dielectric BCB with excellent thermal and mechanical stability is employed to enhance the performance of the antenna. The as-fabricated antenna is characterized, and the experimental results show that the antenna resonates at 14.9 GHz with a 1.67% impedance bandwidth.

关键词： antenna silicon BCB package

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The fabrication of vibration energy harvester arrays based on AlN piezoelectric film

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Journal of Semiconductors 2013年第11期34卷 79-82页

作者：尚正国李东玲温志渝赵兴强 Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology Chongqing University National Center for International Research of Micro/Nano-System and New Material Technology Chongqing University Microsystem Research Center of Chongqing University

： The fabrication and measurement results of the vibration energy harvester arrays based on the piezoelectric aluminum nitride （AlN） film are presented. The structure design and fabrication process of the device are introduced. The key material, the AIN film with crystal orientation （002）, was deposited by pulsed-DC magnetron sputtering and characterized by X-ray diffraction （XRD）. The resonant frequency, power out, and the open circuit voltage of the device are detected. The optimized load of 80 kΩ and a remarkable maximum power out of 30.4 μW are obtained when the acceleration of 0.9g （g is standard gravity acceleration） is applied. Key words： A1N; crystal orientation; harvester arrays; vibration energy

关键词： AlN crystal orientation harvester arrays vibration energy

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