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Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS

作者： Xiao Yu Yanxiang Liu Hong Zhou Yi Wang Tie Li Xiuli Gao Fei Feng Yuelin Wang Science and Technology on Micro-system Laboratory and State Key Laboratory of Transducer Technology Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

ISBN: (纸本)9781467344777

This paper presents a CMOS MEMS-based thermoelectric energy generator device (TEG) used under natural cooling condition with a high output performance. A thermal matching principle is employed for the TEG chip designing and packaging, in which the thermal resistance of the poly-silicon thermopile is approximate to the external thermal load in the system. A wearable device embedded with the TEG chip has been tested in-door when the cold side is naturally cooled by ambient air. The measured results show an open-circuit voltage of as high as 1.6 V and an output power of 0.49 μW when the temperature of the heat source is at 35 ℃, which makes it to be an applicable wearable TEG device for body warmth converting fabricated by CMOS MEMS-based technology.

关键词： thermoelectric CMOS poly-silicon natural cooling

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Theoretical analysis and concept demonstration of a novel MOEMS accelerometer based on Raman-Nath diffraction

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Journal of Semiconductors 2012年第4期33卷 51-56页

作者：张祖伟温志渝胡晶 Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology Chongqing UniversityChongqing 400030China National Center for International Research of Micro/Nano-System and New Material Technology Chongqing UniversityChongqing 400030China Microsystem Research Center of Chongqing University Chongqing 400030China

The design and simulation of a novel microoptoelectromechanical system （MOEMS） accelerometer based on Raman-Nath diffraction are presented. The device is planned to be fabricated by microelectromechanical system technology and has a different sensing principle than the other reported MOEMS accelerometers. The fun- damental theories and principles of the device are discussed in detail, a 3D finite element simulation of the flexural plate wave delay line oscillator is provided, and the operation frequency around 40 MHz is calculated. Finally, a lecture experiment is performed to demonstrate the feasibility of the device. This novel accelerometer is proposed to have the advantages of high sensitivity and anti-radiation, and has great potential for various applications.

关键词： accelerometer MOEMS Raman-Nath diffraction FPW delay line oscillator

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Design and process test of a novel MOEMS accelerometer based on Raman-Nath diffraction

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Journal of Semiconductors 2012年第9期33卷 82-88页

作者：张祖伟温志渝尚正国李东玲胡晶 Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology Chongqing UniversityChongqing 400030China National Center for International Research of Micro/Nano-System and New Material Technology Chongqing University Chongqing 400030China Microsystem Research Center of Chongqing University Chongqing 400030China

A novel micro-opto-electro-mechanical system （MOEMS） accelerometer based on Raman-Nath diffraction is presented. It mainly consists of an FPW delay line oscillator and optical strip waveguides. The fun- damental theories and principles of the device are introduced briefly. A flexural plate-wave delay-line oscillator is designed to work as an acousto-optic （AO） shifter, which has a Klein-Cook parameter of 0.38. Single-mode optical strip waveguides of 2 μm in width and thicknesses of 0.6 μm are designed by using the effective index method for light transmission. The E^y00 mode waveguide polarizers are designed to ensure the consistency of the light polarization in the waveguides. The fabrication process, based on （100） oriented, 450-#m-thick silicon wafers is proposed in detail, and some difficulties in the process are discussed carefully. At last, a series of process tests are undertaken to solve the proposed problems. The results indicate that the proposed design and fabrication process of the device is dependable and realizable.

关键词： accelerometer MOEMS Raman-Nath diffraction design process test

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Structural Design of a Compact in-Plane Nano-Grating Accelerometer

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Chinese Physics Letters 2012年第11期29卷 219-223页

作者： YAO Bao-Yin ZHOU Zhen FENG Li-Shuang WANG Wen-Pu WANG Xiao Key Laboratory of Micro-nano Measurement-manipulation and Physics(Ministry of Education) Beihang UniversityBeijing 100191 Fundamental of Science on Novel Inertial Instrument&Navigation System Technology Laboratory Beihang UniversityBeijing 100191

A combination of large mass,weak spring and nano-grating is the key for a nano-grating accelerometer to measure nano-G acceleration.A novel compact nano-grating accelerometer integrating a large mass with nano-grating is ***,the numbers of diffraction orders are ***,structure parameters are optimized by finite element analysis to achieve a high sensitivity in an ideal vibration ***,we design the fabrication method to form such a compact nano-grating accelerometer and successfully fabricate the uniform and well-designed nano-gratings with a period of 847 nm,crater of 451 nm by an FIB/SEM dual beam *** on the ANSYS simulation,a nano-grating accelerometer is predicted to work in the first modal and enables the accelerometer to have displacement sensitivity at 197 nm/G with a measurement range of±1 G,corresponding to zeroth diffraction beam optical sensitivity 1%/*** nano-gratings fabricated are very close to those designed ones within experimental error to lay the foundation for the sequent *** results provide a theoretical basis for the design and fabrication of nano-grating accelerometers.

关键词： accelerometer beam integrating

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A monolithic RF transceiver for DC-OFDM UWB

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Journal of Semiconductors 2012年第2期33卷 87-95页

作者： Chen Yunfeng Li Wei Fu Haipeng Gap Ting Chen Danfeng Zhou Feng Cai Deyun Li Dan Niu Yangyang Zhou Hanchao Zhu Ning Li Ning Ren Junyan State Key Laboratory of ASIC&System Fudan UniversityShanghai 201203China Micro-/Nano-Electronics Science and Technology Innovation Platform Fudan UniversityShanghai 201203China

This paper presents a first monolithic RF transceiver for DC-OFDM UWB *** proposed direct-conversion transceiver integrates all the building blocks including two receiver（Rx） cores,two transmitter （Tx） cores and a dual-carrier frequency synthesizer（DC-FS） as well as a 3-wire serial peripheral interface（SPI） to set the operating status of the *** ESD-protected chip is fabricated by a TSMC 0.13-μm RF CMOS process with a die size of 4.5 x 3.6 *** measurement results show that the wideband Rx achieves an NF of 5-6.2 dB,a max gain of 76-84 dB with 64-dB variable gain,an in-/out-of-band IIP3 of-6/＋4 dBm and an input loss S11 of〈-10 in all *** Tx achieves an LOLRR/IMGRR of-34/-33 dBc,a typical OIP3 of＋6 dBm and a maximum output power of -5 *** DC-FS outputs two separate carriers simultaneously with an inter-band hopping time of〈1.2 *** full chip consumes a maximum current of 420 mA under a 1.2-V supply.

关键词： DC-OFDM UWB RF transceiver receiver transmitter synthesizer CMOS

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Analysis of the p^+/p window layer of thin film solar cells by simulation

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Journal of Semiconductors 2012年第2期33卷 23-27页

作者： Lin Aiguo Ding Jianning Yuan Ningyi Wang Shubo Cheng Guanggui Lu Chao Center of Micro/Nano Science&Technology Jiangsu UniversityZhenjiang 212013China Center of Low-Dimension Materials Micro/Nano Device and SystemChangzhou UniversityChangzhou 213164China Jiangsu Laboratory for Solar Cell Materials and Technology Changzhou 213164China

The application of a p~＋/p configuration in the window layer of hydrogenated amorphous silicon thin film solar cells is simulated and analyzed utilizing an AMPS-ID *** differences between p~＋-p-i-n configuration solar cells and p-i-n configuration solar cells are pointed *** effects of dopant concentration, thickness of p~＋-layer,contact barrier height and defect density on solar cells are *** results indicate that solar cells with a p~＋-p-i-n configuration have a better *** open circuit voltage and short circuit current were improved by increasing the dopant concentration of the p~＋ layer and lowering the front contact barrier *** defect density at the p/i interface which exceeds two orders of magnitude in the intrinsic layer will deteriorate the cell property.

关键词： p~＋/p configuration thin film solar cells hydrogenated amorphous silicon solar cells window layer

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Sb Rich Ge_(2)Sb_(5)Te_(5) Alloy for High-Speed Phase Change Random Access Memory Applications

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Chinese Physics Letters 2012年第10期29卷 221-223页

作者： ZHANG Qi SONG San-Nian XU Feng Key Laboratory of MEMS of Ministry of Education School of Electronic Science&EngineeringSoutheast UniversityNanjing 210096 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Micro-system and Information TechnologyChinese Academy of SciencesShanghai 200050

Sb rich Ge_(2)Sb_(5)Te_(5) materials are investigated for use as the storage medium for high-speed phase change memory(PCM).Compared with conventional Ge2Sb2Te5,Ge_(2)Sb_(5)Te_(5) films have a higher crystallisation temperature(~200℃),larger crystallisation activation energy(3.13 eV),and a better data retention ability(100.2℃ for ten years).A reversible switching between set and reset states can be realised by an electric pulse as short as 5 ns for Ge_(2)Sb_(5)Te_(5)-based PCM cells,over 10 times faster than the Ge_(2)Sb_(5)Te_(5)-based *** addition,Ge2Sb2Te5 shows a good endurance up to 3×10^(6) cycles with a resistance ratio of about three orders of *** work clearly reveals the highly promising potential of Ge_(2)Sb_(5)Te_(5) films for applications in high-speed PCM.

关键词： resistance faster retention

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Determination of the Lattice Parameters of a Si Nanobelt in a Tensile Test Process Using an MEMS Actuator

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Chinese Physics Letters 2012年第12期29卷 141-144页

作者： ZENG Hong-Jiang LI Tie JIN Qin-Hua XU Fang-Fang WANG Yue-Lin Science and Technology on Micro-system Laboratory State Key Laboratories of Transducer TechnologyShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050 Department of Precision Machinery and Precision Instrumentation University of Science and Technology of ChinaHefei 230026 Analysis and Testing Center for Inorganic Materials Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 200050

We present an experimental method for in-situ observation of the lattice behavior of a single crystal silicon nanobelt during uniaxial tensile *** in-situ silicon nanobelt tensile testing device for transmission electron microscopy is *** behavior and lattice parameters of the nanobelt are studied using selected area electron diffraction.A statistical and least square methods are used for reducing the measurement errors of the lattice *** results suggest that the trends of the lattice parameters during the tensile test are in agreement with the increasing tensile stress in the silicon ***,the local strain calculated from lattice parameters and the average strain of the nanobelt are compared.

关键词： diffraction. strain belt

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Preparation and characterization of three-dimensional micro-electrode for micro-supercapacitor based on inductively coupled plasma reactive etching technology

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science China(Technological sciences) 2012年第7期55卷 2013-2018页

作者： WEN ChunMing WEN ZhiYu YOU Zheng WANG XiaoFeng Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology Chongqing UniversityChongqing 400030China Microsystem Research Center Chongqing UniversityChongqing 400030China Department of Precision Instruments and Mechanics Tsinghua UniversityBeijing 100084China

The capacity of supercapacitor charge storage depends on the size of the electrode surface area and the active material on the *** enhance the charge storage capacity with a reduced volume,silicon is used as the electrode material,and three-dimensional electrode structure is prepared to increase the electrode surface area on the footprint area by inductively coupled plasma reactive etching(ICP) *** anodic constant current deposition method is employed to deposit manganese oxide on the electrode surface as the electroactive *** comparison,samples without slot are prepared with a two-dimensional *** Electron microscopy(SEM) and Energy Dispersive Spectroscopy(EDS) are used to characterize the surface morphology of the electrode structure and the deposited electroactive *** properties of the electrode are characterized by the cyclic voltammetry(CV) and the constant current charge-discharge *** results show that our approach can effectively increase the electrode surface area with more electroactive substances,and hence can increase storage capacity of the micro-supercapacitor.

关键词： micro Electro Mechanical system（MEMS） micro-supercapacitors three-dimensional electrode inductively coupled plasma reactive etching manganese oxide silicon

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Preparation and Electrochemical Characteristics of Three-dimensional Manganese Oxide micro-supercapacitor Electrode

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Chinese Journal of Chemical Physics 2012年第2期25卷 209-213,I0004页

作者： Chun-ming Wen Zhi-yu Wen Zheng You Xiao-feng Wang Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology Chongqing UniversityChongqing 400030China Microsystem Research Center Chongqing UniversityChongqing 400030China Department of Precision Instruments and Mechanics Tsinghua UniversityBeijing 100084China

In order to increase the electrode surface area and enhance the charge storage capacity, we study the micro electro mechanical system technology to fabricate three-dimensional high aspect ratio micro-electrode structure based on glass. The anodic constant potential method is employed to deposit manganese oxide as electroactive substances on the micro-electrode surface. Cyclic voltammetry and constant current charge-discharge method are both used to prepare electrode electrochemical performance testing, with a two-dimensional electrode without structure for comparison. Experimental results show that three-dimensional elec- trode structure can effectively enhance the charge storage capacity. At 1.0 mA/cm2 charge- discharge density, the three-dimensional electrode shows a capacitance of 17.88 mF/cm2, seven times higher than the two-dimensional electrode.

关键词： micro-supercapacitor micro electro mechanical system Three-dimensional electrode Manganese oxide

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