Optical and electrical parameters of biphasic silicon with different crystalline volume fraction (fc) were estimated via effective medium approximation method and experimental results. Then software AMPS-ID has been p...
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In this paper, we focus on the Dual-Carrier modulation (DCM) technology in the Ultra Wide Band (UWB) wireless communication system. A new demodulation algorithm-getting fully usage of frequency diversity in the UWB ch...
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In this paper, we focus on the Dual-Carrier modulation (DCM) technology in the Ultra Wide Band (UWB) wireless communication system. A new demodulation algorithm-getting fully usage of frequency diversity in the UWB channel is proposed. system simulator result shows that the proposed method can get 1.5dB gain at the Per (Packet error) performance of 8% while the data rate is 480Mbps under IEEE CM1 channel. What's more, the method can be implemented by a much fewer complexity hardware architecture, for it avoids LLR calculation in the traditional method.
We synthesized undoped and Mn-doped ZnO films on glass substrates using the sol-gel technique. The micro-structure, morphology and optical properties of ZnO films were studied by using X-ray diffraction, Atomic Force ...
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This paper presents a dual-carrier orthogonal frequency-division multiplexing (DC-OFDM) based ultrawideband (UWB) PHY (RF front-end plus baseband processor) which is compliant with C-WPAN UWB standard. The proposed UW...
This paper presents a dual-carrier orthogonal frequency-division multiplexing (DC-OFDM) based ultrawideband (UWB) PHY (RF front-end plus baseband processor) which is compliant with C-WPAN UWB standard. The proposed UWB PHY supports data rates from 53.2 to 480 Mbps, and demonstrates a packet-error-rate (PER) of 8% under multi-path fading, including CM1, CM2, and CM4 channel modes, additive white Gaussian noise (AWGN), and up to 50 ppm carrier frequency offset (CFO) and sampling frequency offset (SFO). It consists of a radio-frequency (RF) transceiver operating in the frequency band group 2 (6204-8844MHz), a 6-bit folding and interpolating analog-to-digital convertors (ADC), a 8-bit current-steering digital-to-analog convertor (DAC) and a digital baseband processor. The front-end circuits have been fabricated using 0.13μm CMOS technology. The digital baseband processor has been implemented on a Xilinx Vertex-5 FPGA platform.
This paper presents a current-mode 6~9GHz RF transmitter for OFDM-UWB system applications. By a current-mode low pass filter with variable gain between the digital-to-analog converter and the up-conversion mixer, this...
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This paper presents a current-mode 6~9GHz RF transmitter for OFDM-UWB system applications. By a current-mode low pass filter with variable gain between the digital-to-analog converter and the up-conversion mixer, this transmitter exceeds the traditional voltage-mode counterpart in terms of high linearity (+3.5-dBm output 1-dB compression point, +12.5-dBm output third intercept point) and low spurious emission (50-dB sideband rejection) with low power consumption (40-mA current under 1.2-V supply voltage). By an output power flattening technique, the output power ripple is restricted within ±0.5dB. By an inductor-less divider and active-inductor LO buffer, a small die area of 0.72 mm 2 is obtained with TSMC's 0.13-μm 1P8M RF CMOS technology. The design is verified through post-layout simulations.
This paper presents the design of a sideband-suppressed synthesizer for dual-carrier MB-OFDM transceivers covering 11 frequency bands from 6.2GHz to 9.4GHz and 3 frequency bands from 4.2GHz to 4.8GHz, each with a band...
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This paper presents the design of a sideband-suppressed synthesizer for dual-carrier MB-OFDM transceivers covering 11 frequency bands from 6.2GHz to 9.4GHz and 3 frequency bands from 4.2GHz to 4.8GHz, each with a bandwidth of 264MHz. Careful band plan is made to minimize the complexity. The synthesizer generates 14 carrier frequencies from a single frequency source. Improvements are made to the circuits to further suppress the sidebands. The synthesizer chip is designed with TSMC's 0.13-μm RF CMOS technology. The circuit draws a current of 42mA from a 1.2V supply. It achieves a sideband rejection of 45dBc and a phase noise of -105dBc/Hz@1MHz.
This paper introduces a microrobotic platform to manipulate and characterize individual paper fibers. Mechanical characterization of individual paper fibers determines the key parameters which affect the quality of pa...
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This paper introduces a microrobotic platform to manipulate and characterize individual paper fibers. Mechanical characterization of individual paper fibers determines the key parameters which affect the quality of paper sheets. Current laboratory tests are based on bulk paper fiber measurements. This paper presents a microrobotic platform which is able to characterize the flexibility of individual paper fibers directly, not in bulk amount and using indirect estimations. The flexibility of three different pulp samples is measured and the experimental results are reported.
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