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International Conference on Optics Photonics and Energy Engineering (OPEE)

作者： Ning-Yi Yuan Shu-Bo Wang Xiu-Qin Wang Jian-Ning Ding Feng Ye Jia-Li Zhang Hong-Min Chen Center of Low-dimensional Materials Micro Nano Device and System Jiangsu Polytechnic University Changzhou China Center of Micro/Nano Science & Technology College of Mechanical Engineering Jiangsu University Zhenjiang China Key Laboratory of New Energy Source Changzhou China Changzhou University Changzhou CN

ISBN: (纸本)9781424452347;9781424452354;9781424452361

Optical and electrical parameters of biphasic silicon with different crystalline volume fraction (fc) were estimated via effective medium approximation method and experimental results. Then software AMPS-1D has been performed to investigate the influence of fc on biphasic silicon as the intrinsic layer on the performance of biphasic silicon single-junction and amorphous silicon/biphasic silicon double-junction solar cells. According to the simulation results, biphasic silicon thin film with approximate 50 % fc is suitable to serve as the intrinsic layer of the thin film solar cells, which can achieve the highest conversion efficiency.

关键词： Semiconductor thin films Photovoltaic cells Crystallization Optical films Amorphous silicon Power engineering and energy Amorphous materials Degradation Laboratories Materials science and technology

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A 1-V 60-μW 85-dB dynamic range continuous-time third-order sigma-delta modulator

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Journal of Semiconductors 2009年第12期30卷 118-122页

作者：李渊文齐达董一枫许俊任俊彦 State Key Laboratory of ASIC & System Micro-Nanoelectronics Science and Technology Innovation Platform Fudan University

A 1-V third order one-bit continuous-time（CT） EA modulator is presented. Designed in the SMIC mixedsignal 0.13-μm CMOS process, the modulator utilizes active RC integrators to implement the loop filter. An efficient circuit design methodology for the CT ZA modulator is proposed and verified. Low power dissipation is achieved through the use of two-stage class A/AB amplifiers. The presented modulator achieves 81.4-dB SNDR and 85-dB dynamic range in a 20-kHz bandwidth with an over sampling ratio of 128. The total power consumption of the modulator is only 60 μW from a 1-V power supply and the prototype occupies an active area of 0.12 mm^2.

关键词： analog-to-digital converter continuous-time filter low-power low-voltage sigma-delta modulation

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A novel low-voltage operational amplifier for low-power pipelined ADCs

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Journal of Semiconductors 2009年第1期30卷 82-85页

作者：范明俊任俊彦过瑶李宁叶凡李联 State Key Laboratory of ASIC & System Fudan University Micro-Nanoelectronics Science and Technology Innovation Platform Fudan University

A novel low-voltage two-stage operational amplifier employing class-AB architecture is presented. The structure utilizes level-shifters and current mirrors to create the class-AB behavior in the first and second stages. With this structure, the transconductances of the two stages are double compared with the normal configuration without class-AB behaviors with the same current consumption. Thus power can be saved and the operation frequency can be increased. The nested cascode miller compensation and symmetric common-mode feedback circuits are used for large unit-gain bandwidth, good phase margin and stability. Simulation results show that the sample-and-hold of the 12-bit 40-Ms/s pipelined ADC using the proposed amplifier consumes only 5.8 mW from 1.2 V power supply with signal-to-noise-and-distortion ratio 89.5 dB, spurious-free dynamic range 95.7 dB and total harmonic distortion -94.3 dB with Nyquist input signal frequency.

关键词： low-voltage operational amplifier class-AB two-stage amplifier low-power pipelined ADC

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3D Modeling and Finite-Element Full-wave Simulation of TSV for Stack up SIP Integration Applications

3D Modeling and Finite-Element Full-wave Simulation of TSV f...

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2010 11th International Conference on Electronic Packaging technology & High Density Packaging(2010 电子封装技术与高密度封装国际会议)

作者： Lei Liang Min Miao Zhensong Li Bo Han Xin Sun Yufeng Jin Information Microsystem Institute Beijing Information Science and Technology University.No.35 Nort System & Standard Department Datang Mobile Communications Equipment Co. Ltd.No.29 Xueyuan Road H National Key Laboratory of Micro/Nano Fabrication Technology Peking University＃ 5 Yiheyuan Rd Ha

The modeling and simulation of via's effect on the data transferring or high frequency signal path and device performance have been one of the major concerns in the designing and testing of multilayered electric interconnects in applications like highly integrated system-in-package (SIP)[1] and high-speed circuitry design[2]. The authors of this paper explore the 3D full-wave modeling of through Si vias (TSV) in multilayered SIP and simulate their effects on spectral performance and signal integrity with the help of finite element methodologies. The emphasis of the research is on the revealing of 3D electromagnetic field distribution on fundamental single and differential TSV interlayer interconnects, so that more detailed parasitic effects may be found and equivalent model closer to the reality can be obtained, compared with the methodology based on purely circuit analysis. And the effect of the variations in the TSV diameter and height and the effect of grounded TSV are revealed. Additionally, S21 performance and field distribution of two sort of paired vias are displayed. Waveports are adopted for the full-wave modeling and all the cases are in 0～10GHz range.

关键词： Through-silicon vias Integrated circuit modeling Solid modeling Three dimensional displays Finite element methods Couplings Circuit simulation

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An SPICE Model for PCM Based on Arrhenius Equation

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Chinese Physics Letters 2009年第12期26卷 243-246页

作者：李喜宋志棠蔡道林陈小刚贾晓玲 State Key Laboratory of Functional Materials for Informatics Laboratory of Nanotechnology Shanghai Institute of Micro-system and Information Technology Chinese Academy of Sciences Shanghai 200050 Department of Electronic Science and Technology Tongji University Shanghai 201804

Based on the temperature dependence of the Arrhenius law, an HSPICE compact module using Verilog-A language for phase change memory （PCM） is presented. In the model of this HSPICE compact module, the basic theory that the resistance of the amorphous semiconductor has relations with the activation energy and temperature is used, and an assumption that this theory can be expanded to describe the crystalline semiconductor is employed. Moreover, since an objective reality that the resistance of the semiconductor determines the temperature and the temperature affects the resistance inversely is inevitable, coupling with such positive feedback, this model can reproduce the real-time characteristics of the memory cell accurately. The simulation results show that this model can reproduce the features of the PCM cell well. It can be used in the PCM circuit design and further analysis.

关键词： Chinese climate network complex systems small world community

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A DEP chip with arc-shape microelectrode arrays for the separation of different-size particles

A DEP chip with arc-shape microelectrode arrays for the sepa...

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4th IEEE International Conference on Nano/micro Engineered and Molecular systems, NEMS 2009

作者： Chunag, Cheng-Hsin Chen, Yu-Chi Hsu, You-Ming Huang, Huei-Sheng Hsiao, Fei-Bin Wang, Chin-Hung Department of Mechanical Engineering Institute of Nanotechnology Southern Taiwan University Tainan Taiwan Department of Medical Laboratory Science and Biotechnology National Cheng Kung University Tainan Taiwan Department of Aeronautics and Astronautics National Cheng Kung University Tainan Taiwan Micro System Technology Center Institute Technology Research Institute Southern Tainan Taiwan

ISBN: (纸本)9781424446308

This paper presents a microfluidic chip with arcshape electrodes array (ASEA) for separation of different-size particles/Cells based on negative dielectrophoresis (nDEP). The purpose of ASEA is to generate the dielectrophoretic force perpendicular to the microchannel direction within the gap between each pairs of arc-shape electrodes. The DEP chip consisted of two regions of ASEA;first ASEA was design for aligning all particles floating along with the wall of microchannel before enter the second ASEA region;the configuration of second ASEA was upside down with first region, thus, the DEP force could move particles from the one side of microchannel toward the other side with different magnitude corresponding to its size, consequently, different size of particles can be separated within the second ASEA region. In this study, three typically electrode shapes, trapezoidal shape, convex-arc shape and concave-arc shape, were investigated for constructing an electric field gradient along the perpendicular direction to fluid flow by numerical simulation. A convex arc-shape electrode can provide better separation effect due to the larger effective area of DEP force and relative small variation of VE2 as indicated in the simulation results. Therefore, we fabricated a PDMS microchannel with two convex ASEAs for demonstration of the separation function between 19pm and 8pm polystyrene particles. This method can provide a continuous and high throughput separation of different-size bioparticles once they have similar dielectric properties that cannot separated by traditional DEP approach. © 2009 IEEE.

关键词： Electrophoresis

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EFFECTS OF Si in SiXSb2Te3 FILMS FOR C-RAM

EFFECTS OF Si in SiXSb2Te3 FILMS FOR C-RAM

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第十三届北京分析测试学术报告会暨展览会(BCEIA 2009)

作者： Yan CHENG Qifei GONG Xiaodong HAN Ze ZHANG Ting ZHANG Zhitang SONG Bo LIU Songlin FENG Institute of Microstructure and Property of Advanced Materials Beijing University of Technology School of Materials Science and Engineering University of Science and Technology Beijing Laboratory of Nanotechnology Shanghai Institute of Micro-System and Information TechnologyChinese Academy of Sciences

Chalcogenide random access memory(C-RAM)is considered as a promising technology for the next-generation non-volatile data storage because of its large electrical resistance variation when changing from the amorphous t... 详细信息

关键词： EFFECTS OF Si in SiXSb2Te3 FILMS FOR C-RAM

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EFFECTS OF Si in SiXSb2Te3 FILMS FOR C-RAM

EFFECTS OF Si in SiXSb2Te3 FILMS FOR C-RAM

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2009第十三届北京分析测试学术报告会

作者： Yan CHENG Qifei GONG Xiaodong HAN Ze ZHANG Ting ZHANG Zhitang SONG Bo LIU Songlin FENG Institute of Microstructure and Property of Advanced Materials Beijing University of TechnologyBeijing 100124China School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing 100083China Laboratory of NanotechnologyShanghai Institute of Micro-System and Information TechnologyChinese Academy of SciencesShanghai 200050China

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Design and verified experiment of grating moving light modulator for HDTV

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Guangxue Xuebao/Acta Optica Sinica 2009年第SUPPL. 2期29卷 335-341页

作者： Zhang, Zhihai The Key Laboratory for Opto-Electronic Technology and System Ministry of Education Chongqing University Chongqing 400044 China National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology Chongqing University Chongqing 400044 China

A novel MOEMS-based (micro-Opto-Electro-Mechanical systems) light modulator for laser project display was proposed, which is called Grating Moving Light Modulator (GMLM). It can modulate light by diffraction, and has a simple fabrication process and projection optical system. It is suitable to form 2D array modulator. To satisfy the requirement of HDTV projection system, the formulas and parameters for the key structure design of GMLM are given. The fabrication process is also designed to meet the special distinct of GMLM. Finally, experiments are carried out for the 16 × 16 GMLM array. The static and dynamic projection results of GMLM array are achieved by the laser projection demo system, which verifies the operation and projection principals of GMLM. The size of GMLM is measured as 52 μm × 52 μm. The operation voltage is measured as 6.7 V. The response frequency is measured as 11.9 kHz. Those parameters can satisfy the requirements of HDTV projector. But the uniformity and driving method of GMLM array need improvement. All of the above researches lay the foundation for the HDTV project display system based on GMLM.

关键词： High definition television

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Design and realization for circuit system of CPT atomic clock

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Yi Qi Yi Biao Xue Bao/Chinese Journal of Scientific Instrument 2009年第SUPPL.期30卷 247-250页

作者： Shi, Xiong Xu, Jian Department of Electrical and Information Wuhan Polytechnic University Wuhan 430023 China Division of Micro-Opto-Electro-Mechanical System in Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology Wuhan 430074 China

This paper presents the principle of Coherent Population Trapping (CPT) and gives a method to realize the circuit system of the coherent population trapping passive atomic clock. It was demonstrated by experiments tha... 详细信息

关键词： Timing circuits

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