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[email protected] plasmonic nanoarchitectures: An ideal photoanode for dye-sensitized solar cells

Renewable and Sustainable Energy Reviews 2016年 60卷 408-420页

作者： Alagarsamy Pandikumar Su-Pei Lim Subramaniam Jayabal Nay Ming Huang Hong Ngee Lim Ramasamy Ramaraj Centre for Photoelectrochemistry School of Chemistry Madurai Kamaraj University Madurai 625021 India Low Dimensional Materials Research Centre Department of Physics Faculty of Science University of Malaya 50603 Kuala Lumpur Malaysia Department of Chemistry Faculty of Science Universiti Putra Malaysia 43400 UPM Serdang Selangor Malaysia Functional Device Laboratory Institute of Advanced Technology Universiti Putra Malaysia 43400 UPM Serdang Selangor Malaysia

Rapid depletion of fossil fuel leads to increasing energy demand in the near future and it will force us to seek alternative eco-friendly and renewable energy resources. Dye-sensitized solar cells (DSSCs) represent one of the most promising emerging technologies for light-to-electrical energy conversion. Titania is the most widely used photoanode, but its limited performance due to poor interfacial charge transfer and limited optical properties has motivated the quest for modified titania materials to overcome this issue. The emergence of gold–titania nanocomposite materials (Au–TiO 2 ) as a new component to fabricate the DSSCs has opened up new ways to effectively utilize renewable energy sources. This review article mainly focuses on the superior photovoltaic performance of Au–TiO 2 nanocomposite materials based photoanode in DSSCs. The review justifies how plasmonic Au influences the visible light absorption, electrons transfer process and solar energy conversion efficiency. Data supporting and confirming the superiority of Au on TiO 2 or TiO 2 on Au are briefly presented to justify the possibility of electron transfer from dye to conduction band of the TiO 2 through Au. This account further highlights the recent developments in these area and points out some specific Au–TiO 2 plasmonic nanoarchitectures as photoanode for improved device performance.

关键词： Plasmonic photoanode Nanoarchitectures Dye-sensitized solar cells Green energy Renewable energy

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Solar Cells: Efficient and Flexible Thin Film Amorphous Silicon Solar Cells on Nanotextured Polymer Substrate Using Sol–gel Based Nanoimprinting Method (Adv. Funct. Mater. 13/2017)

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advanced functional Materials 2017年第13期27卷

作者： Chi Zhang Ye Song Min Wang Min Yin Xufei Zhu Li Tian Hui Wang Xiaoyuan Chen Zhiyong Fan Linfeng Lu Dongdong Li Key Laboratory of Soft Chemistry and Functional Materials of Education Ministry Nanjing University of Science and Technology Nanjing 210094 China Shanghai Advanced Research Institute Chinese Academy of Sciences 99 Haike Road Zhangjiang Hi‐Tech Park Pudong Shanghai 201210 China Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong 999077 ChinaSAR

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Study on Structure and Properties of New Heterocyclic Aramid Fibers

Study on Structure and Properties of New Heterocyclic Aramid...

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2015 2nd International Conference on Machinery,Materials Engineering,Chemical Engineering and Biotechnology(MMECEB 2015)

作者： Yingdeng Song Bintai Li Liying Xing Beijing Institute of Aeronautical Materials Science and Technology on Advanced composite LaboratoryAVIC Composite Center

ISBN: (纸本)9781510819092

The structure parameters of a new heterocyclic aramid fiber(F-3B) and the Kevlar-49 fiber were characterized using wide-angle X-ray diffraction(WAXD) in *** tensile strength and modulus of aramid fibers were determined by monofilament tensile *** the correlation of structure parameters with mechanical properties of aramid fibers was *** results show that F-3B has higher tensile modulus and strength than Kevlar-49 due to its more perfect and higher orientation of crystallites in the fiber axial direction.

关键词： Heterocyclic aramid fiber Kevlar-49 Structure-property relation Wide-angle X-ray diffraction Kevlar Aramid fibers Aramid fibers Wide-angle x-ray diffraction Structural parameter quantitative structure property relation AXIAL

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Unraveling Photoinduced Spin Dynamics in the Topological Insulator Bi2Se3

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Physical Review Letters 2016年第3期116卷 036601-036601页

作者： M. C. Wang S. Qiao Z. Jiang S. N. Luo J. Qi The Peac Institute of Multiscale Sciences Chengdu Sichuan 610031 People’s Republic of China Key Laboratory of Advanced Technologies of Materials Ministry of Education Southwest Jiaotong University Chengdu Sichuan 610031 People’s Republic of China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 People’s Republic of China School of Physical Science and Technology ShanghaiTech University Shanghai 200031 People’s Republic of China School of Physics Georgia Institute of Technology Atlanta Georgia 30332 USA

We report on a time-resolved ultrafast optical spectroscopy study of the topological insulator Bi2Se3. We unravel that a net spin polarization cannot only be generated using circularly polarized light via interband transitions between topological surface states (SSs), but also via transitions between SSs and bulk states. Our experiment demonstrates that tuning photon energy or temperature can essentially allow for photoexcitation of spin-polarized electrons to unoccupied topological SSs with two distinct spin relaxation times (∼25 and ∼300 fs), depending on the coupling between SSs and bulk states. The intrinsic mechanism leading to such distinctive spin dynamics is the scattering in SSs and bulk states which is dominated by Eg2 and A1g1 phonon modes, respectively. These findings are suggestive of novel ways to manipulate the photoinduced coherent spins in topological insulators.

关键词： Electric polarization Surface states Topological insulators Kerr effect Reflectivity

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Optoelectronic Devices: Wafer‐Scale Highly Ordered Anodic Aluminum Oxide by Soft Nanoimprinting Lithography for Optoelectronics Light Management (Adv. Mater. Interfaces 5/2017)

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advanced Materials Interfaces 2017年第5期4卷

作者： Chi Zhang Wenchao Li Dongliang Yu Yanshan Wang Min Yin Hui Wang Ye Song Xufei Zhu Paichun Chang Xiaoyuan Chen Dongdong Li Key Laboratory of Soft Chemistry and Functional Materials of Education Ministry Nanjing University of Science and Technology Nanjing 210094 China Shanghai Advanced Research Institute Chinese Academy of Sciences 99 Haike Road Zhangjiang Hi‐Tech Park Pudong Shanghai 201210 China Laboratory of Materials Integration Kainan University No. 1 Kainan Road Taoyuan City 338 Taiwan

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Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit

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Physical Review Letters 2016年第1期116卷 016602-016602页

作者： Yuhan Zhang Jingsi Qiao Si Gao Fengrui Hu Daowei He Bing Wu Ziyi Yang Bingchen Xu Yun Li Yi Shi Wei Ji Peng Wang Xiaoyong Wang Min Xiao Hangxun Xu Jian-Bin Xu Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices Renmin University of China Beijing 100872 China College of Engineering and Applied Sciences Nanjing University Nanjing 210093 China School of Physics Nanjing University Nanjing 210093 China Department of Physics and Astronomy Shanghai Jiao Tong University Shanghai 200240 China and Collaborative Innovation Center of Advanced Microstructures Nanjing 210093 China Department of Physics University of Arkansas Fayetteville Arkansas 72701 USA CAS Key Laboratory of Soft Matter Chemistry Department of Polymer Science and Engineering University of Science and Technology of China Hefei 230026 China Department of Electronic Engineering and Materials Science and Technology Research Center The Chinese University of Hong Kong Hong Kong SAR China

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ∼3 nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals.

关键词： Electrical conductivity Van der Waals interaction 2-dimensional systems Multilayer thin films Organic semiconductors Atomic force microscopy Transmission electron microscopy Transport techniques

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Semiconductor-topological insulator transition of two-dimensional SbAs induced by biaxial tensile strain

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Physical Review B 2016年第24期93卷 245303-245303页

作者： Shengli Zhang Meiqiu Xie Bo Cai Haijun Zhang Yandong Ma Zhongfang Chen Zhen Zhu Ziyu Hu Haibo Zeng Institute of Optoelectronics & Nanomaterials Jiangsu Key Laboratory of Advanced Micro & Nano Materials and Technology College of Material Science and Engineering Nanjing University of Science and Technology Nanjing 210094 China Department of Chemistry Institute for Functional Nanomaterials University of Puerto Rico Rio Piedras San Juan Puerto Rico 00931 USA Department of Physics and Science Jacobs University Bremen Campus Ring 1 28759 Bremen Germany Materials Department University of California Santa Barbara California 93106 USA Beijing Computational Science Research Center Beijing 100094 China

A stibarsen [derived from Latin stibium (antimony) and arsenic] or allemontite, is a natural form of arsenic antimonide (SbAs) with the same layered structure as arsenic and antimony. Thus, exploring the two-dimensional SbAs nanosheets is of great importance to gain insights into the properties of group V-V compounds at the atomic scale. Here, we propose a class of two-dimensional V-V honeycomb binary compounds, SbAs monolayers, which can be tuned from semiconductor to topological insulator. By ab initio density functional theory, both α-SbAs and γ-SbAs display a significant direct band gap, while others are indirect semiconductors. Interestingly, in an atomically thin β-SbAs polymorph, spin-orbital coupling is significant, which reduces its band gap by 200 meV. Especially under biaxial tensile strain, the gap of β-SbAs can be closed and reopened with concomitant change of band shapes, which is reminiscent of band inversion known in many topological insulators. In addition, we find that the Z2 topological invariant is 1 for β-SbAs under the tensile strain of 12%, and the nontrivial topological feature of β-SbAs is also confirmed by the gapless edge states which cross linearly at the Γ point. These ultrathin group-V-V semiconductors with outstanding properties are highly favorable for applications in alternative optoelectronic and quantum spin Hall devices.

关键词： Spin-orbit coupling Topological phase transition 2-dimensional systems Topological insulators Ab initio calculations GGA

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Evaporation-induced failure of hydrophobicity

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Physical Review Fluids 2016年第5期1卷 053901-053901页

作者： H. Luo T. Liu J. Ma P. Wang Y. Wang Y. Leprince-Wang G. Jing School of Physics and National Key Laboratory and Incubation Base of Photoelectric Technology and Functional Materials Northwest University 710069 China Department of Physics The Hong Kong University of Science and Technology Hong Kong Northwest Institute for Non-ferrous Metal Research 710016 China Beijing Key Laboratory of Civil Aircraft Structures and Composite Materials Beijing Aeronautical Science & Technology Research Institute of COMAC (BASTRI) 102211 China Université Paris-Est Laboratoire ESYCOM UPEM 5 Bd. Descartes F-77454 Marne la Vallée France PMMH CNRS-UMR 7636 ESPCI-ParisTech 10 Rue Vauquelin 75005 Paris France

Hydrophobic coatings have tremendous applications in many fields of industries, and their robustness is an important subject of investigation. Here we experimentally demonstrate the detachment of hydrophobic coating and the formation of the residual deposit resulting from an evaporating drop of water. A hydrophobic octadecanethiol (ODT) coating is employed to enhance the hydrophobicity of ZnO nanowire arrays (advancing and receding contact angle of 165° and 128°, respectively). Being a model system of the unique bonding interaction between ODT and ZnO, water drop drying on the structure of ODT/ZnO is examined. Our experimental results showed the significant depression and even failure of the hydrophobicity on this composite surface resulting from collecting the deposits of ODT molecules during the drop drying. By analyzing energy criterion and force balance, surface tension at the moving contact line is identified as a dominating destructive force to unstick the coating molecules. Interestingly, a normal rinsing stream does not damage this coating to alter its hydrophobicity, but rather is overshadowed by the evaporation of the tinny water drop. The drops of rain or condensed water outdoor may thus play the same role to damage the functional coatings after their evaporation. Our findings indicate that more delicate designs are needed to prevent the destructive effects of drop evaporation on superhydrophobic surfaces.

关键词： Coatings Wetting

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Electronic structure of YFe2Ge2 studied by angle-resolved photoemission spectroscopy

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Physical Review B 2016年第2期93卷 024506-024506页

作者： D. F. Xu D. W. Shen D. Zhu J. Jiang B. P. Xie Q. S. Wang B. Y. Pan P. Dudin T. K. Kim M. Hoesch J. Zhao X. G. Wan D. L. Feng State Key Laboratory of Surface Physics Department of Physics Fudan University Shanghai 200433 China Laboratory of Advanced Materials Fudan University Shanghai 200433 China Collaborative Innovation Center of Advanced Microstructures Fudan University Shanghai 200433 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology (SIMIT) Chinese Academy of Sciences Shanghai 200050 China CAS-Shanghai Science Research Center Shanghai 201203 China National Laboratory of Solid State Microstructures Collaborative Innovation Center of Advanced Microstructures and College of Physics Nanjing University Nanjing 210093 China Diamond Light Source Harwell Science and Innovation Campus Didcot OX11 0DE United Kingdom

We report an angle-resolved photoemission spectroscopy study of a ThCr2Si2-type superconductor YFe2Ge2 (Tc≈1.8 K) in the normal state. The resolved low-energy band structure mainly consists of several flat Fe bands, while the renormalization factors of different bands range from 1.7 to 2.8. Around the Fermi level, these bands contribute to a high density of states, which may account for the unusually high Sommerfeld coefficient γ. Besides, a 30 meV kink is observed, which is probably induced by electron-phonon interactions. Our results indicate that YFe2Ge2 is a moderately correlated compound, while electron-phonon coupling should be taken into account to better understand its properties.

关键词： YTTRIUM compounds ELECTRONIC structure PHOTOELECTRON spectroscopy THORIUM compounds ENERGY bands

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High-repetition-rate, high-peak-power passively Q-switched ceramic Nd:YAG 946 nm laser

High-repetition-rate, high-peak-power passively Q-switched c...

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advanced Solid State Lasers, ASSL 2015

作者： Yan, Renpeng Yu, Xin Ma, Yufei Li, Xudong Li, Jiang Pan, Yubai National Key Laboratory of Science and Technology on Tunable Laser Harbin Institute of Technology Harbin150080 China Key Laboratory of Transparent and Opto-functional Advanced Inorganic Materials Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai200050 China

We demonstrate a high-repetition-rate, high-peak-power diode-pumped passively Qswitched ceramic Nd:YAG quasi-three-level laser at 946 nm. The maximum peak power reaches 12.4 kW with a pulse width of 13.0 ns at 3.3 kHz... 详细信息

ISBN: (纸本)9781943580026

关键词： Yttrium aluminum garnet

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