检索结果-内蒙古大学图书馆

arXiv 2019年

作者： Ablikim, M. Achasov, M.N. Adlarson, P. Ahmed, S. Albrecht, M. Alekseev, M. Amoroso, A. An, F.F. An, Q. Bai, Y. Bakina, O. Ferroli, R. Baldini Ban, Y. Begzsuren, K. Bennett, J.V. Berger, N. Bertani, M. Bettoni, D. Bianchi, F. Biernat, J. Bloms, J. Boyko, I. Briere, R.A. Cai, H. Cai, X. Calcaterra, A. Cao, G.F. Cao, N. Cetin, S.A. Chai, J. Chang, J.F. Chang, W.L. Chelkov, G. Chen, D.Y. Chen, G. Chen, H.S. Chen, J.C. Chen, M.L. Chen, S.J. Chen, Y.B. Cheng, W. Cibinetto, G. Cossio, F. Cui, X.F. Dai, H.L. Dai, J.P. Dai, X.C. Dbeyssi, A. Dedovich, D. Deng, Z.Y. Denig, A. Denysenko, I. Destefanis, M. de Mori, F. Ding, Y. Dong, C. Dong, J. Dong, L.Y. Dong, M.Y. Dou, Z.L. Du, S.X. Fan, J.Z. Fang, J. Fang, S.S. Fang, Y. Farinelli, R. Fava, L. Feldbauer, F. Felici, G. Feng, C.Q. Fritsch, M. Fu, C.D. Fu, Y. Gao, Q. Gao, X.L. Gao, Y. Gao, Y. Gao, Y.G. Gao, Z. Garillon, B. Garzia, I. Gersabeck, E.M. Gilman, A. Goetzen, K. Gong, L. Gong, W.X. Gradl, W. Greco, M. Gu, L.M. Gu, M.H. Gu, S. Gu, Y.T. Guo, A.Q. Guo, L.B. Guo, R.P. Guo, Y.P. Guskov, A. Han, S. Hao, X.Q. Harris, F.A. He, K.L. Heinsius, F.H. Held, T. Heng, Y.K. Hou, Y.R. Hou, Z.L. Hu, H.M. Hu, J.F. Hu, T. Hu, Y. Huang, G.S. Huang, J.S. Huang, X.T. Huang, X.Z. Huesken, N. Hussain, T. Andersson, W. Ikegami Imoehl, W. Irshad, M. Ji, Q. Ji, Q.P. Ji, X.B. Ji, X.L. Jiang, H.L. Jiang, X.S. Jiang, X.Y. Jiao, J.B. Jiao, Z. Jin, D.P. Jin, S. Jin, Y. Johansson, T. Kalantar-Nayestanaki, N. Kang, X.S. Kappert, R. Kavatsyuk, M. Ke, B.C. Keshk, I.K. Khan, T. Khoukaz, A. Kiese, P. Kiuchi, R. Kliemt, R. Koch, L. Kolcu, O.B. Kopf, B. Kuemmel, M. Kuessner, M. Kupsc, A. Kurth, M. Kurth, M.G. Kühn, W. Lange, J.S. Larin, P. Lavezzi, L. Leithoff, H. Lenz, T. Li, C. Li, Cheng Li, D.M. Li, F. Li, F.Y. Li, G. Li, H.B. Li, H.J. Li, J.C. Li, J.W. Li, Ke Li, L.K. Institute of High Energy Physics Beijing100049 China Beihang University Beijing100191 China Beijing Institute of Petrochemical Technology Beijing102617 China Bochum Ruhr-University BochumD-44780 Germany Carnegie Mellon University PittsburghPA15213 United States Central China Normal University Wuhan430079 China China Center of Advanced Science and Technology Beijing100190 China COMSATS University Islamabad Lahore Campus Defence Road Off Raiwind Road Lahore54000 Pakistan Fudan University Shanghai200443 China Novosibirsk630090 Russia GSI Helmholtzcentre for Heavy Ion Research GmbH DarmstadtD-64291 Germany Guangxi Normal University Guilin541004 China Guangxi University Nanning530004 China Hangzhou Normal University Hangzhou310036 China Helmholtz Institute Mainz Johann-Joachim-Becher-Weg 45 MainzD-55099 Germany Henan Normal University Xinxiang453007 China Henan University of Science and Technology Luoyang471003 China Huangshan College Huangshan245000 China Hunan Normal University Changsha410081 China Hunan University Changsha410082 China Indian Institute of Technology Madras Chennai600036 India Indiana University BloomingtonIN47405 United States INFN Laboratori Nazionali di Frascati FrascatiI-00044 Italy INFN and University of Perugia PerugiaI-06100 Italy INFN Sezione di Ferrara FerraraI-44122 Italy University of Ferrara FerraraI-44122 Italy Institute of Physics and Technology Peace Ave. 54B Ulaanbaatar13330 Mongolia Johannes Gutenberg University of Mainz Johann-Joachim-Becher-Weg 45 MainzD-55099 Germany Joint Institute for Nuclear Research Dubna Moscow region141980 Russia Justus-Liebig-Universitaet Giessen II. Physikalisches Institut Heinrich-Buff-Ring 16 GiessenD-35392 Germany KVI-CART University of Groningen GroningenNL-9747 AA Netherlands Lanzhou University Lanzhou730000 China Liaoning University Shenyang110036 China Nanjing Normal University Nanjing210023 China Nanjing University Nanjing210093 Chi

The exclusive process e+e− → ΛΛ, ¯ with Λ → pπ− and Λ¯ → pπ ¯ +, has been studied at √s = 2.396 GeV for measurement of the Λ electric and magnetic form factors, GE and GM. A data sample, corresponding to an integrated luminosity of 66.9 pb−1, was collected with the BESIII detector for this purpose. A multi-dimensional analysis with a complete decomposition of the spin structure of the reaction enables a determination of the modulus of the ratio R = |GE/GM| and, for the first time for any baryon, the relative phase ∆Φ = ΦE − ΦM. The resulting values are obtained using the recent and most precise measured value of the asymmetry parameter αΛ = 0.750 ± 0.010 to be R = 0.96±0.14 (stat.)± 0.02 (sys.) and ∆Φ = 37o± 12o (stat.)± 6o (sys.), respectively. In addition, the cross section is measured with unprecedented precision to be σ = 118.7 ± 5.3 (stat.)± 5.1 (sys.) pb, which corresponds to an effective form factor of |G| = 0.123 ± 0.003 (stat.) ± 0.003 (sys.). The contribution from two-photon exchange is found to be negligible. Our result enables the first complete determination of baryon time-like electromagnetic form factors. Copyright © 2019, The Authors. All rights reserved.

关键词： Hadrons

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Study of the Decays Ds+ → KS0K+ and KL0K+

arXiv

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arXiv 2019年

作者： Ablikim, M. Achasov, M.N. Adlarson, P. Ahmed, S. Albrecht, M. Alekseev, M. Amoroso, A. An, F.F. An, Q. Bai, Y. Bakina, O. Ferroli, R. Baldini Balossino, I. Ban, Y. Begzsuren, K. Bennett, J.V. Berger, N. Bertani, M. Bettoni, D. Bianchi, F. Biernat, J. Bloms, J. Boyko, I. Briere, R.A. Cai, H. Cai, X. Calcaterra, A. Cao, G.F. Cao, N. Cetin, S.A. Chai, J. Chang, J.F. Chang, W.L. Chelkov, G. Chen, D.Y. Chen, G. Chen, H.S. Chen, J.C. Chen, M.L. Chen, S.J. Chen, Y.B. Cheng, W. Cibinetto, G. Cossio, F. Cui, X.F. Dai, H.L. Dai, J.P. Dai, X.C. Dbeyssi, A. Dedovich, D. Deng, Z.Y. Denig, A. Denysenko, I. Destefanis, M. de Mori, F. Ding, Y. Dong, C. Dong, J. Dong, L.Y. Dong, M.Y. Dou, Z.L. Du, S.X. Fan, J.Z. Fang, J. Fang, S.S. Fang, Y. Farinelli, R. Fava, L. Feldbauer, F. Felici, G. Feng, C.Q. Fritsch, M. Fu, C.D. Fu, Y. Gao, Q. Gao, X.L. Gao, Y. Gao, Y. Gao, Y.G. Gao, Z. Garillon, B. Garzia, I. Gersabeck, E.M. Gilman, A. Goetzen, K. Gong, L. Gong, W.X. Gradl, W. Greco, M. Gu, L.M. Gu, M.H. Gu, S. Gu, Y.T. Guo, A.Q. Guo, L.B. Guo, R.P. Guo, Y.P. Guskov, A. Han, S. Hao, X.Q. Harris, F.A. He, K.L. Heinsius, F.H. Held, T. Heng, Y.K. Himmelreich, M. Hou, Y.R. Hou, Z.L. Hu, H.M. Hu, J.F. Hu, T. Hu, Y. Huang, G.S. Huang, J.S. Huang, X.T. Huang, X.Z. Huesken, N. Hussain, T. Andersson, W. Ikegami Imoehl, W. Irshad, M. Ji, Q. Ji, Q.P. Ji, X.B. Ji, X.L. Jiang, H.L. Jiang, X.S. Jiang, X.Y. Jiao, J.B. Jiao, Z. Jin, D.P. Jin, S. Jin, Y. Johansson, T. Kalantar-Nayestanaki, N. Kang, X.S. Kappert, R. Kavatsyuk, M. Ke, B.C. Keshk, I.K. Khoukaz, A. Kiese, P. Kiuchi, R. Kliemt, R. Koch, L. Kolcu, O.B. Kopf, B. Kuemmel, M. Kuessner, M. Kupsc, A. Kurth, M. Kurth, M.G. Kühn, W. Lange, J.S. Larin, P. Lavezzi, L. Leithoff, H. Lenz, T. Li, C. Li, Cheng Li, D.M. Li, F. Li, F.Y. Li, G. Li, H.B. Institute of High Energy Physics Beijing100049 China Beihang University Beijing100191 China Beijing Institute of Petrochemical Technology Beijing China Bochum Ruhr-University BochumD-44780 Germany Carnegie Mellon University PittsburghPA15213 United States Central China Normal University Wuhan430079 China China Center of Advanced Science and Technology Beijing100190 China COMSATS University Islamabad Lahore Campus Defence Road Off Raiwind Road Lahore54000 Pakistan Fudan University Shanghai200443 China Novosibirsk630090 Russia GSI Helmholtzcentre for Heavy Ion Research GmbH DarmstadtD-64291 Germany Guangxi Normal University Guilin541004 China Guangxi University Nanning530004 China Hangzhou Normal University Hangzhou310036 China Helmholtz Institute Mainz Johann-Joachim-Becher-Weg 45 MainzD-55099 Germany Henan Normal University Xinxiang453007 China Henan University of Science and Technology Luoyang471003 China Huangshan College Huangshan245000 China Hunan Normal University Changsha410081 China Hunan University Changsha410082 China Indian Institute of Technology Madras Chennai600036 India Indiana University BloomingtonIN47405 United States INFN Laboratori Nazionali di Frascati INFN and University of Perugia PerugiaI-06100 Italy INFN Sezione di Ferrara FerraraI-44122 Italy Institute of Physics and Technology Peace Ave. 54B Ulaanbaatar13330 Mongolia Johannes Gutenberg University of Mainz Johann-Joachim-Becher-Weg 45 MainzD-55099 Germany Joint Institute for Nuclear Research Dubna Moscow region141980 Russia Justus-Liebig-Universitaet Giessen II. Physikalisches Institut Heinrich-Buff-Ring 16 GiessenD-35392 Germany KVI-CART University of Groningen GroningenNL-9747 AA Netherlands Lanzhou University Lanzhou730000 China Liaoning University Shenyang110036 China Nanjing Normal University Nanjing210023 China Nanjing University Nanjing210093 China Nankai University Tianjin300071 China Peking University Beijing100871

Using an e+e− annihilation data sample corresponding to an integrated luminosity of 3.19 fb−1 and collected at a center-of-mass energy √s = 4.178 GeV with the BESIII detector, we measure the absolute branching fractions B(Ds+ → KS0K+) = (1.425 ± 0.038stat. ± 0.031syst.)% and B(Ds+ → KL0 K+) = (1.485 ± 0.039stat. ± 0.046syst.)%. The branching fraction of Ds+ → KS0K+ is compatible with the world average and that of Ds+ → KL0 K+ is measured for the first time. We present the first measurement of the KS0-KL0 asymmetry in the decays Ds+ → KS,L0 K+, and R(Ds+ → KS,L0 K+) = BB((DDss++→→KKSS00KK++)+)−BB((DDss++→→KKLL00KK++)) = (−2.1 ± 1.9stat. ± 1.6syst.)%. In addition, we measure the direct CP asymmetries ACP(Ds± → KS0K±) = (0.6 ± 2.8stat. ± 0.6syst.)% and ACP(Ds± → KL0 K±) = (−1.1 ± 2.6stat. ± 0.6syst.)%. Copyright © 2019, The Authors. All rights reserved.

关键词： Germanium alloys

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Resistive Switching: Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects (Adv. Mater. 14/2018)

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advanced Materials 2018年第14期30卷

作者： Xiaolong Zhao Jun Ma Xiangheng Xiao Qi Liu Lin Shao Di Chen Sen Liu Jiebin Niu Xumeng Zhang Yan Wang Rongrong Cao Wei Wang Zengfeng Di Hangbing Lv Shibing Long Ming Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Department of Physics Hubei Nuclear Solid Physics Key Laboratory and Center for Ion beam Application Wuhan University Wuhan 430072 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China School of Electronic Electrical and Communication Engineering University of Chinese Academy of Sciences Beijing 100049 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China Department of Nuclear Engineering Texas A&M University College Station TX 77843 USA Materials Science and Technology Division Los Alamos National Laboratory Los Alamos NM 87545 USA

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Design of a multi-channel spin polarimeter

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Chinese Physics C 2015年第3期39卷 113-116页

作者：石潭季福昊叶茂万唯实乔山 Physics Department Laboratory of Advanced Materials and Surface Physics Laboratory Fudan University State key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences Advanced Light Source Lawrence Berkeley National Laboratory School of Physical Science and Technology Shanghai Tech University

All commercial electron spin polarimeters work in single channel mode, which is the bottleneck of researches by spin-resolved photoelectron spectroscopy. By adopting the time inversion antisymmetry of the magnetic field, we developed a multichannel spin polarimeter based on normal incident very low energy electron diffraction （VLEED）. The key point to achieve the multi-channel measurements is the spatial resolution of the electron optics. The test of the electron optics shows that the designed spatial resolution can be achieved and an image type spin polarimeter with 100 times 100, totally ten thousand channels is possible to be realized.

关键词： multi-channel electron spin polarimeter spatial resolution

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Preparation of BN coating on KD-II silicon carbide fiber by dip-coating process

Preparation of BN coating on KD-II silicon carbide fiber by ...

引用

Chinese Materials Congress, CMC 2014

作者： Yang, Bei Zhou, Xin Gui Yu, Jin Shan Wang, Hong Lei Science and Technology on Advanced Ceramic Fibers and Composites Laboratory National University of Defense Technology Changsha410073 China

ISBN: (纸本)9783038353959

Boron nitride(BN) coating on KD-II silicon carbide fiber was prepared from boric acid and urea by a 4-circle dip-coating process. SiCf/SiC composites were prepared from the precursor LPVCS by a HP(heat pressure) assisted PIP(precursor infiltration and pyrolysis) process. The microstructure and crystal structure of the coatings were characterized by SEM and XRD. XPS was adapted to analysis the composition and contents of different elements on the surface of BN coating. The influence of dip-coating process to the fibers was studied by the monofilament strength test. As the results, the monofilament strengths of the dip-coated fibers decreased firstly and increased subsequently. The strengths were slightly higher (3.4%) than the original fiber after 4 circles. The average flexural strength and fracture toughness of the composites with BN coating are respectively 290. 8. MPa and 12. 09. MPa⋅m1/2, while those of composites without coating are 144. 1. MPa and 6. 72. MPa⋅m1/2, respectively. © (2015) Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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41-4: Microscale Pattern Polarized Emission from Semiconductor Nanorods by Photo-Induced Alignment technology

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SID Symposium Digest of Technical Papers 2017年第1期48卷

作者： Wanlong Zhang Julian Schneider Abhishek K. Srivastava Andrey L. Rogach Vladimir G. Chigrinov Hoi Sing Kwok State Key Laboratory on Advanced Displays and Optoelectronics Technologies Hong Kong University of Science and Technology Hong Kong Department of Physics and Materials Science and Centre for Functional Photonics (CFP) City University of Hong Kong Hong Kong

In this paper, we demonstrate the alignment of semiconductor nanorods in both macro and micro scale patterns, highlighting the precise character of photo-alignment technology. The dependence of nanorods’ orientation and emission under exposure to linearly polarized light is exemplified by such patterns, which have potential for future photonic applications.

关键词： nanorod photo-alignment microscale pattern polarized emission

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Back Cover: Enhanced Electrochemical Performance of Ti‐Doping Li1.15Ni0.47Sb0.38O2as Lithium‐excess Cathode for Lithium‐ion Batteries (Chin. J. Chem. 12/2017)

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Chinese Journal of Chemistry 2017年第12期35卷

作者： Xiaozhi Su Xingbo Wang Haiping Chen Zhen Yu Jiaxin Qi Shi Tao Wangsheng Chu Li Song National Synchrotron Radiation Laboratory University of Science and Technology of China Hefei Anhui 230029 China Department of Physics and Electronic Engineering Jiangsu Lab of Advanced Functional Materials Changshu Institute of Technology Changshu Jiangsu 215500 China

The back cover picture shows X‐ray near edge absorption spectroscopy has been applied to cathode materials for lithium‐ion batteries to explore its structure‐activity relationship. The result shows that in the Li‐rich cathode Li 1.15 Ni 0.47 Sb 0.38 O 2 , as a model system, Ti ions replaced the Li ions and then made an antistructure defect. It would change our understanding to the doped method for the cathode layer materials and benefit for designing other more powerful cathodes. In the picture, the road has been represented by the curve shape of the XANES of the as‐studied sample. The atomic arrangement around the Ti ion of the sample has been put into the tank position of the car. NSRL, National Synchrotron Radiation laboratory, is the name of our laboratory. More details are discussed in the article by Chu et al. on page 1853–1860.

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Microstructure, mechanical and dielectric properties of Si3N4-BN composites with different porosities

Microstructure, mechanical and dielectric properties of Si3N...

引用

Chinese Materials Congress, CMC 2014

作者： Liu, Kun Zhang, Chang Rui Li, Bin Wang, Si Qing Cao, Feng Science and Technology on Advanced Ceramic Fibers and Composites Laboratory National University of Defense Technology Changsha410073 China

ISBN: (纸本)9783038353959

Si3N4-BN composites were prepared by die-pressing and precursor infiltration and pyrolysis (PIP) route using borazine as the precursor. The composition, microstructure, mechanical, and dielectric properties of the composites with different porosities were investigated. With the adoption of starch as pore forming substance, drawn the Si3N4 preform from the liquid precursor borazine and decrease the pressure during curing, the porosity of the Si3N4-BN composites were effectively increased. Along with the increase of the porosity of the composites, the mechanical properties were decreased and the dielectric properties were improved. With 20 wt.% starch and drawn Si3N4 preform from borazine before curing, the density, porosity, flexural strength and elastic modulus of the composites were 1.70 g·cm-3, 29.78%, 48.05MPa and 32.45GPa, respectively. The dielectric constants and loss tangents were 4.20~4.44 and 0.48~3.42×10-3 at the frequency 7~ 18GHz. composites with various dielectric and mechanical properties can be designed and prepared according to the application needs. © (2015) Trans Tech Publications, Switzerland.

关键词： Microstructure

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Observation of the topological surface state in the nonsymmorphic topological insulator KHgSb

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Physical Review B 2017年第16期96卷 165143-165143页

作者： A. J. Liang J. Jiang M. X. Wang Y. Sun N. Kumar C. Shekhar C. Chen H. Peng C. W. Wang X. Xu H. F. Yang S. T. Cui G. H. Hong Y.-Y. Xia S.-K. Mo Q. Gao X. J. Zhou L. X. Yang C. Felser B. H. Yan Z. K. Liu Y. L. Chen School of Physical Science and Technology ShanghaiTech University Shanghai 201210 People's Republic of China Advanced Light Source Lawrence Berkeley National Laboratory Berkeley California 94720 USA Pohang Accelerator Laboratory POSTECH Pohang 790-784 Korea Max Planck Institute for Chemical Physics of Solids D-01187 Dresden Germany Department of Physics University of Oxford Oxford OX1 3PU United Kingdom State Key Laboratory of Functional Materials for Informatics SIMIT Chinese Academy of Sciences Shanghai 200050 People's Republic of China State Key Laboratory of Low Dimensional Quantum Physics Department of Physics and Collaborative Innovation Center of Quantum Matter Tsinghua University Beijing 100084 People's Republic of China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 People's Republic of China Collaborative Innovation Center of Quantum Matter Beijing 100190 People's Republic of China Department of Condensed Matter Physics Weizmann Institute of Science Rehovot 7610001 Israel Hefei Science Center CAS and SCGY University of Science and Technology of China Hefei 230026 People's Republic of China

Topological insulators represent unusual topological quantum states, typically with gapped bulk band structure but gapless surface Dirac fermions protected by time-reversal symmetry. Recently, a distinct kind of topological insulator resulting from nonsymmorphic crystalline symmetry was proposed in the KHgX (X=As, Sb, Bi) compounds. Unlike regular topological crystalline insulators, the nonsymmorphic glide-reflection symmetry in KHgX guarantees the appearance of an exotic surface fermion with hourglass shape dispersion (where two pairs of branches switch their partners) residing on its (010) side surface, contrasting to the usual two-dimensional Dirac fermion form. Here, by using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the electronic structures of KHgSb on both (001) and (010) surfaces and reveal the unique in-gap surface states on the (010) surface with delicate dispersion consistent with the “hourglass Fermion” recently proposed. Our experiment strongly supports that KHgSb is a nonsymmorphic topological crystalline insulator with hourglass fermions, which serves as an important step to the discovery of unique topological quantum materials and exotic fermions protected by nonsymmorphic crystalline symmetry.

关键词： Electronic structure Semiconductors Topological materials Angle-resolved photoemission spectroscopy

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Microstructures and mechanical properties of three-dimensional braided carbon fiber reinforced mullite composites with different sols as raw materials

Microstructures and mechanical properties of three-dimension...

引用

Chinese Materials Congress, CMC 2014

作者： Liang, Song Lin Ma, Qing Song Liu, Hai Tao Science and Technology on Advanced Ceramic Fibers and Composites Laboratory National University of Defense Technology Changsha410073 China

ISBN: (纸本)9783038353959

In order to efficiently fabricate dense three-dimensional carbon fiber reinforced mullite matrix composites (3D C/mullite), two kinds of Al2O3-SiO2 sols with high solid content were used as raw materials. The ceramic yield and mullitization behavior of the sols and the densification process were investigated. It is indicated that the two sols have proper solid content and ceramic yield and can be completely transformed into mullite at 1573K, which make them be able to prepare composites. 3D C/mullite composites with a porosity of ∼25% were prepared by repeating less than 20 cycles of infiltration-drying-heating of sols, and the microstructures and mechanical properties were examined. The results suggest that the sol with smaller particle size derived composites exhibit well-sintered dense matrix and physically stronger interfacial bonding, which are beneficial to improve load-bearing and load-transferring capacity of matrix. As a result, this composites show much higher mechanical properties. The flexural strength and modulus are 2.4 times and 1.3 times as those of the sol with larger particle size derived composites, respectively. © (2015) Trans Tech Publications, Switzerland.

关键词： Sol-gels

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