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Gate-tuned superconductor-insulator transition in (Li,Fe)OHFeSe

Physical Review B 2016年第6期93卷 060501(R)-060501(R)页

作者： B. Lei Z. J. Xiang X. F. Lu N. Z. Wang J. R. Chang C. Shang A. M. Zhang Q. M. Zhang X. G. Luo T. Wu Z. Sun X. H. Chen Hefei National Laboratory for Physical Science at Microscale and Department of Physics and Key Laboratory of Strongly-coupled Quantum Matter Physics Chinese Academy of Sciences University of Science and Technology of China Hefei Anhui 230026 China Department of Physics Beijing Key Laboratory of Opto-electronic Functional Materials and Micro-nano Devices Renmin University of China Beijing 100872 China Department of Physics and Astronomy Collaborative Innovation Center of Advanced Microstructures Shanghai Jiao Tong University Shanghai 200240 China Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China National Synchrotron Radiation Laboratory University of Science and Technology of China Hefei Anhui 230026 China High Magnetic Field Laboratory Chinese Academy of Sciences Hefei Anhui 230031 China

The antiferromagnetic (AFM) insulator-superconductor transition has always been a center of interest in the underlying physics of unconventional superconductors. However, in the family of iron-based high-Tc superconductors, no intrinsic superconductor-insulator transition has been confirmed so far. Here, we report a first-order transition from superconductor to AFM insulator with a strong charge doping induced by ionic gating in the thin flakes of single crystal (Li,Fe)OHFeSe. The superconducting transition temperature (Tc) is continuously enhanced with electron doping by ionic gating up to a maximum Tc of 43 K, and a striking superconductor-insulator transition occurs just at the verge of optimal doping with highest Tc. A phase diagram of temperature-gating voltage with the superconductor-insulator transition is mapped out, indicating that the superconductor-insulator transition is a common feature for unconventional superconductivity. These results help to uncover the underlying physics of iron-based superconductivity as well as the universal mechanism of high-Tc superconductivity. Our finding also suggests that the gate-controlled strong charge doping makes it possible to explore novel states of matter in a way beyond traditional methods.

关键词： Phase transitions Superconductivity Magnetic insulators Pnictides

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Water Splitting: Strongly Coupled Nafion Molecules and Ordered Porous CdS Networks for Enhanced Visible-Light Photoelectrochemical Hydrogen Evolution (Adv. Mater. 24/2016)

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advanced Materials 2016年第24期28卷 4943-4943页

作者： Zheng, Xue-Li Song, Ji-Peng Ling, Tao Hu, Zhen Peng Yin, Peng-Fei Davey, Kenneth Du, Xi-Wen Qiao, Shi-Zhang Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education Tianjin Key Laboratory of Composite and Functional Materials School of Materials Science and Engineering Tianjin University Tianjin300072 China School of Chemical Engineering The University of Adelaide AdelaideSA5005 Australia School of Physics Nankai University Tianjin300071 China

T. Ling, X.-W. Du, S. Z. Qiao, and co-workers report strongly coupled Nafion molecules and ordered-porous CdS networks for visible-light water splitting. The image conceptually shows how the three-dimensional ordered structure effectively harvests incoming light. As described on page 4935, the inorganic CdS skeleton is homogeneously passivated by the organic Nafion molecules to facilitate hydrogen generation.

关键词： photoelectrochemical water splitting organic–inorganic materials inverse opals

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Nearly-free-electron system of monolayer Na on the surface of single-crystal HfSe2

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Physical Review B 2016年第20期94卷 201121(R)-201121(R)页

作者： T. Eknapakul I. Fongkaew S. Siriroj R. Vidyasagar J. D. Denlinger L. Bawden S.-K. Mo P. D. C. King H. Takagi S. Limpijumnong W. Meevasana School of Physics Suranaree University of Technology Nakhon Ratchasima 30000 Thailand Synchrotron Light Research Institute Nakhon Ratchasima 30000 Thailand Advanced Light Source Lawrence Berkeley National Laboratory Berkeley California 94720 USA SUPA School of Physics and Astronomy University of St. Andrews St. Andrews Fife KY16 9SS United Kingdom Department of Physics University of Tokyo Hongo Tokyo 113-0033 Japan Magnetic Materials Laboratory RIKEN Advanced Science Institute Wako Saitama 351-0198 Japan NANOTEC-SUT Center of Excellence on Advanced Functional Nanomaterials Suranaree University of Technology Nakhon Ratchasima 30000 Thailand

The electronic structure of a single Na monolayer on the surface of single-crystal HfSe2 is investigated using angle-resolved photoemission spectroscopy. We find that this system exhibits an almost perfect “nearly-free-electron” behavior with an extracted effective mass of ∼1me, in contrast to heavier masses found previously for alkali-metal monolayers on other substrates. Our density-functional-theory calculations indicate that this is due to the large lattice constant, causing both exchange and correlation interactions to be suppressed, and to the weak hybridization between the overlayer and the substrate. This is therefore an ideal model system for understanding the properties of two-dimensional materials.

关键词： Electronic structure Transition metal dichalcogenides Two-dimensional electron gas Angle-resolved photoemission spectroscopy Density functional theory

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Observation and study of the decay J/ψ → φηη0

arXiv

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arXiv 2018年

作者： Ablikim, M. Achasov, M.N. Ahmed, S. Albrecht, M. Alekseev, M. Amoroso, A. An, F.F. An, Q. Bai, J.Z. Bai, Y. Bakina, O. Baldini Ferroli, R. Ban, Y. Begzsuren, K. Bennett, D.W. Bennett, J.V. Berger, N. Bertani, M. Bettoni, D. Bianchi, F. Boger, E. Boyko, I. Briere, R.A. Cai, H. Cai, X. Cakir, O. Calcaterra, A. Cao, G.F. Cetin, S.A. Chai, J. Chang, J.F. Chelkov, G. Chen, G. Chen, H.S. Chen, J.C. Chen, M.L. Chen, P.L. Chen, S.J. Chen, X.R. Chen, Y.B. Cheng, W. Chu, X.K. Cibinetto, G. Cossio, F. Dai, H.L. Dai, J.P. Dbeyssi, A. Dedovich, D. Deng, Z.Y. Denig, A. Denysenko, I. Destefanis, M. de Mori, F. Ding, Y. Dong, C. Dong, J. Dong, L.Y. Dong, M.Y. Dou, Z.L. Du, S.X. Duan, P.F. Fang, J. Fang, S.S. Fang, Y. Farinelli, R. Fava, L. Fegan, S. Feldbauer, F. Felici, G. Feng, C.Q. Fioravanti, E. Fritsch, M. Fu, C.D. Gao, Q. Gao, X.L. Gao, Y. Gao, Y.G. Gao, Z. Garillon, B. Garzia, I. Gilman, A. Goetzen, K. Gong, L. Gong, W.X. Gradl, W. Greco, M. Gu, M.H. Gu, Y.T. Guo, A.Q. Guo, R.P. Guo, Y.P. Guskov, A. Haddadi, Z. Han, S. Hao, X.Q. Harris, F.A. He, K.L. He, X.Q. Heinsius, F.H. Held, T. Heng, Y.K. Hou, Z.L. Hu, H.M. Hu, J.F. Hu, T. Hu, Y. Huang, G.S. Huang, J.S. Huang, X.T. Huang, X.Z. Huang, Z.L. Hussain, T. Ikegami Andersson, W. Irshad, M. Ji, Q. Ji, Q.P. Ji, X.B. Ji, X.L. Jiang, X.S. Jiang, X.Y. Jiao, J.B. Jiao, Z. Jin, D.P. Jin, S. Jin, Y. Johansson, T. Julin, A. Kalantar-Nayestanaki, N. Kang, X.S. Kavatsyuk, M. Ke, B.C. Keshk, I.K. Khan, T. Khoukaz, A. Kiese, P. Kiuchi, R. Kliemt, R. Koch, L. Kolcu, O.B. Kopf, B. Kornicer, M. Kuemmel, M. Kuessner, M. Kupsc, A. Kurth, M. Kühn, W. Lange, J.S. Larin, P. Lavezzi, L. Leithoff, H. Li, C. Li, Cheng Li, D.M. Li, F. Li, F.Y. Li, G. Li, H.B. Li, H.J. Li, J.C. Li, J.W. Li, Jin Li, K.J. Li, Kang Li, Ke Li, Lei Li, P.L. Li, P.R. Institute of High Energy Physics Beijing100049 China Beihang University Beijing100191 China Beijing Institute of Petrochemical Technology Beijing102617 China Bochum Ruhr-University BochumD-44780 Germany Carnegie Mellon University PittsburghPA15213 United States Central China Normal University Wuhan430079 China China Center of Advanced Science and Technology Beijing100190 China COMSATS Institute of Information Technology Lahore Defence Road Off Raiwind Road Lahore54000 Pakistan Fudan University Shanghai200443 China Novosibirsk630090 Russia GSI Helmholtzcentre for Heavy Ion Research GmbH DarmstadtD-64291 Germany Guangxi Normal University Guilin541004 China Guangxi University Nanning530004 China Hangzhou Normal University Hangzhou310036 China Helmholtz Institute Mainz Johann-Joachim-Becher-Weg 45 MainzD-55099 Germany Henan Normal University Xinxiang453007 China Henan University of Science and Technology Luoyang471003 China Huangshan College Huangshan245000 China Hunan Normal University Changsha410081 China Hunan University Changsha410082 China Indian Institute of Technology Madras Chennai600036 India Indiana University BloomingtonIN47405 United States INFN Laboratori Nazionali di Frascati FrascatiI-00044 Italy INFN and University of Perugia PerugiaI-06100 Italy INFN Sezione di Ferrara FerraraI-44122 Italy University of Ferrara FerraraI-44122 Italy Institute of Physics and Technology Peace Ave. 54B Ulaanbaatar13330 Mongolia Johannes Gutenberg University of Mainz Johann-Joachim-Becher-Weg 45 MainzD-55099 Germany Joint Institute for Nuclear Research Dubna Moscow region141980 Russia Justus-Liebig-Universitaet Giessen II. Physikalisches Institut Heinrich-Buff-Ring 16 GiessenD-35392 Germany KVI-CART University of Groningen GroningenNL-9747 AA Netherlands Lanzhou University Lanzhou730000 China Liaoning University Shenyang110036 China Nanjing Normal University Nanjing210023 China Nanjing University Nanjing210

We report the observation and study of the decay J/ψ → φηη' using 1.3 × 109 J/ψ events collected with the BESIII detector. Its branching fraction, including all possible intermediate states, is measured to be (2.32 ± 0.06 ± 0.16) × 10−4. We also report evidence for a structure, denoted as X, in the φη' mass spectrum in the 2.0 − 2.1 GeV/c2 region. Using two decay modes of the η' meson (γπ+π− and ηπ+π−), a simultaneous fit to the φη' mass spectra is performed. Assuming the quantum numbers of the X to be JP = 1−, its significance is found to be 4.4σ, with a mass and width of (2002.1±27.5±21.4) MeV/c2 and (129±17±9) MeV, respectively, and a product branching fraction B(J/ψ → ηX)×B(X → φη') = (9.8±1.2±1.7)×10−5. Alternatively, assuming JP = 1+, the significance is 3.8σ, with a mass and width of (2062.8±13.1±7.2) MeV/c2 and (177±36±35) MeV, respectively, and a product branching fraction B(J/ψ → ηX)×B(X → φη') = (9.6±1.4±2.0)×10−5. The angular distribution of J/ψ → ηX is studied and the two JP assumptions of the X cannot be clearly distinguished due to the limited statistics. In all measurements the first uncertainties are statistical and the second systematic. Copyright © 2018, The Authors. All rights reserved.

关键词： Angular distribution

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Cover Picture: Controlling Heat Release from a Close-Packed Bisazobenzene–Reduced-Graphene-Oxide Assembly Film for High-Energy Solid-State Photothermal Fuels (ChemSusChem 7/2017)

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ChemSusChem 2017年第7期10卷 1300-1300页

作者： Xiaoze Zhao Dr. Yiyu Feng Chengqun Qin Weixiang Yang Qianyu Si Prof. Wei Feng School of Materials Science and Engineering Tianjin University Tianjin 300072 P. R China Key Laboratory of Advanced Ceramics and Machining Technology Ministry of Education Tianjin 300072 P. R China Tianjin Key Laboratory of Composite and Functional Materials Tianjin 300072 P. R China Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) Tianjin 300072 P. R China

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A facile and effective strategy to synthesize orthorhombic Sr2Al6O11:Eu2+,Dy3+ with blue-green persistent luminescence

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IOP Conference Series: Materials science and Engineering 2017年第1期167卷

作者： Juan Han Ziqiu Jiang Wenyan Zhang Lingyun Hao Yaru Ni Chunhua Lu Zhongzi Xu College of Material Engineering Jinling Institute of technology Nanjing China Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites Nanjing Tech University Nanjing PR China State Key Laboratory of Materials-Oriented Chemical Engineering College of Materials Science and Engineering Nanjing Tech University Nanjing PR China

Sr2Al6O11:Eu2+,Dy3+ is known as a high efficient material for generating persistent luminescence. Due to its low structural stability, it is a challenge to prepare such orthorhombic material in large scale. In this work, a facile and effective strategy was designed for the preparation of Sr2Al6O11:Eu2+,Dy3+ with high purity by combining the advantages of solid state reaction and chemical vapor deposition method. The prepared Sr2Al6O11:Eu2+,Dy3+ could effectively store the UV light energy and emit blue-green luminescence for 240 min by slow liberation of photo-excited electrons. Its blue-green afterglow was composed of two luminescent emissions which released from the Eu centers located in different crystal fields.

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Photodiodes based in La0.7Sr0.3MnO3 /single layer MoS2 hybrid vertical heterostructures

arXiv

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arXiv 2017年

作者： Niu, Yue Frisenda, Riccardo Svatek, Simon A. Orfila, Gloria Gallego, Fernando Gant, Patricia Agraït, Nicolás León, Carlos Rivera-Calzada, Alberto de Lara, David Perez Santamaria, Jacobo Castellanos-Gomez, Andres Faraday 9 Ciudad Universitaria de Cantoblanco Madrid28049 Spain National Key Laboratory of Science and Technology on Advanced Composites in Special Environments Harbin Institute of Technology Harbin China GFMC Departamento de Fisica de Materiales Universidad Complutense de Madrid Madrid28040 Spain GFMC Instituto de Magnetismo Aplicado "Salvador Velayos" Universidad Complutense de Madrid Madrid28040 Spain Departamento de Física de la Materia Condensada and IFIMAC Universidad Autónoma de Madrid MadridE-28049 Spain Sor Juana Ines de la Cruz 3Cantoblanco Madrid28049 Spain Unidad Asociada "Laboratorio de heteroestructuras con aplicacion en espintronica" UCM/CSIC Sor Juana Ines de la Cruz 3Cantoblanco Madrid28049 Spain

The fabrication of artificial materials by stacking of individual two-dimensional (2D) materials is amongst one of the most promising research avenues in the field of 2D materials. Moreover, this strategy to fabricate new man-made materials can be further extended by fabricating hybrid stacks between 2D materials and other functional materials with different dimensionality making the potential number of combinations almost infinite. Among all these possible combinations, mixing 2D materials with transition metal oxides can result especially useful because of the large amount of interesting physical phenomena displayed separately by these two material families. We present a hybrid device based on the stacking of a single layer MoS2 onto a lanthanum strontium manganite (La0.7Sr0.3MnO3) thin film, creating an atomically thin device. It shows a rectifying electrical transport with a ratio of 103, and a photovoltaic effect with Voc up to 0.4 V. The photodiode behaviour arises as a consequence of the different doping character of these two materials. This result paves the way towards combining the efforts of these two large materials science communities. Copyright © 2017, The Authors. All rights reserved.

关键词： Transition metals

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[email protected] plasmonic nanoarchitectures: An ideal photoanode for dye-sensitized solar cells

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Renewable and Sustainable Energy Reviews 2016年 60卷 408-420页

作者： Alagarsamy Pandikumar Su-Pei Lim Subramaniam Jayabal Nay Ming Huang Hong Ngee Lim Ramasamy Ramaraj Centre for Photoelectrochemistry School of Chemistry Madurai Kamaraj University Madurai 625021 India Low Dimensional Materials Research Centre Department of Physics Faculty of Science University of Malaya 50603 Kuala Lumpur Malaysia Department of Chemistry Faculty of Science Universiti Putra Malaysia 43400 UPM Serdang Selangor Malaysia Functional Device Laboratory Institute of Advanced Technology Universiti Putra Malaysia 43400 UPM Serdang Selangor Malaysia

Rapid depletion of fossil fuel leads to increasing energy demand in the near future and it will force us to seek alternative eco-friendly and renewable energy resources. Dye-sensitized solar cells (DSSCs) represent one of the most promising emerging technologies for light-to-electrical energy conversion. Titania is the most widely used photoanode, but its limited performance due to poor interfacial charge transfer and limited optical properties has motivated the quest for modified titania materials to overcome this issue. The emergence of gold–titania nanocomposite materials (Au–TiO 2 ) as a new component to fabricate the DSSCs has opened up new ways to effectively utilize renewable energy sources. This review article mainly focuses on the superior photovoltaic performance of Au–TiO 2 nanocomposite materials based photoanode in DSSCs. The review justifies how plasmonic Au influences the visible light absorption, electrons transfer process and solar energy conversion efficiency. Data supporting and confirming the superiority of Au on TiO 2 or TiO 2 on Au are briefly presented to justify the possibility of electron transfer from dye to conduction band of the TiO 2 through Au. This account further highlights the recent developments in these area and points out some specific Au–TiO 2 plasmonic nanoarchitectures as photoanode for improved device performance.

关键词： Plasmonic photoanode Nanoarchitectures Dye-sensitized solar cells Green energy Renewable energy

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Solar Cells: Efficient and Flexible Thin Film Amorphous Silicon Solar Cells on Nanotextured Polymer Substrate Using Sol–gel Based Nanoimprinting Method (Adv. Funct. Mater. 13/2017)

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advanced functional Materials 2017年第13期27卷

作者： Chi Zhang Ye Song Min Wang Min Yin Xufei Zhu Li Tian Hui Wang Xiaoyuan Chen Zhiyong Fan Linfeng Lu Dongdong Li Key Laboratory of Soft Chemistry and Functional Materials of Education Ministry Nanjing University of Science and Technology Nanjing 210094 China Shanghai Advanced Research Institute Chinese Academy of Sciences 99 Haike Road Zhangjiang Hi‐Tech Park Pudong Shanghai 201210 China Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong 999077 ChinaSAR

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Unraveling Photoinduced Spin Dynamics in the Topological Insulator Bi2Se3

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Physical Review Letters 2016年第3期116卷 036601-036601页

作者： M. C. Wang S. Qiao Z. Jiang S. N. Luo J. Qi The Peac Institute of Multiscale Sciences Chengdu Sichuan 610031 People’s Republic of China Key Laboratory of Advanced Technologies of Materials Ministry of Education Southwest Jiaotong University Chengdu Sichuan 610031 People’s Republic of China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 People’s Republic of China School of Physical Science and Technology ShanghaiTech University Shanghai 200031 People’s Republic of China School of Physics Georgia Institute of Technology Atlanta Georgia 30332 USA

We report on a time-resolved ultrafast optical spectroscopy study of the topological insulator Bi2Se3. We unravel that a net spin polarization cannot only be generated using circularly polarized light via interband transitions between topological surface states (SSs), but also via transitions between SSs and bulk states. Our experiment demonstrates that tuning photon energy or temperature can essentially allow for photoexcitation of spin-polarized electrons to unoccupied topological SSs with two distinct spin relaxation times (∼25 and ∼300 fs), depending on the coupling between SSs and bulk states. The intrinsic mechanism leading to such distinctive spin dynamics is the scattering in SSs and bulk states which is dominated by Eg2 and A1g1 phonon modes, respectively. These findings are suggestive of novel ways to manipulate the photoinduced coherent spins in topological insulators.

关键词： Electric polarization Surface states Topological insulators Kerr effect Reflectivity

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