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Bulk and surface electronic structure of hexagonal structured PtBi2 studied by angle-resolved photoemission spectroscopy

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Physical Review B 2016年第23期94卷 235140-235140页

作者： Q. Yao Y. P. Du X. J. Yang Y. Zheng D. F. Xu X. H. Niu X. P. Shen H. F. Yang P. Dudin T. K. Kim M. Hoesch I. Vobornik Z.-A. Xu X. G. Wan D. L. Feng D. W. Shen State Key Laboratory of Surface Physics Department of Physics and Laboratory of Advanced Materials Fudan University Shanghai 200433 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology (SIMIT) Chinese Academy of Sciences Shanghai 200050 China National Laboratory of Solid State Microstructures College of Physics Nanjing University Nanjing 210093 China Collaborative Innovation Centre of Advanced Microstructures Nanjing 210093 China Department of Physics Zhejiang University Hangzhou 310027 China Diamond Light Source Harwell Science and Innovation Campus Didcot OX11 0DE United Kingdom CNR-IOM TASC Laboratory AREA Science Park-Basovizza 34149 Trieste Italy Zhejiang California International NanoSystems Institute Zhejiang University Hangzhou 310027 China CAS Center for Excellence in Superconducting Electronics (CENSE) Shanghai 200050 China

PtBi2 with a layered hexagonal crystal structure was recently reported to exhibit an unconventional large linear magnetoresistance, while the mechanism involved is still elusive. Using high-resolution angle-resolved photoemission spectroscopy, we present a systematic study on its bulk and surface electronic structure. Through careful comparison with first-principle calculations, our experiment distinguishes the low-lying bulk bands from entangled surface states, allowing the estimation of the real composition of samples. We find significant electron doping in PtBi2, implying a substantial Bi-deficiency-induced disorder therein. Intriguingly, we discover a Dirac-cone-like surface state on the boundary of the Brillouin zone, which is identified as an accidental Dirac band without topological protection. Our findings exclude linear band dispersion in the quantum limit as the cause of the unconventional large linear magnetoresistance but give support to the classical disorder model from the perspective of the electronic structure.

关键词： Dirac fermions Electronic structure Magnetoresistance Surface states Angle-resolved photoemission spectroscopy Density functional theory

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A thin radar-infrared stealth-compatible structure:Design,fabrication,and characterization

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Chinese Physics B 2014年第2期23卷 333-338页

作者：田浩刘海韬程海峰 Science and Technology on Advanced Ceramic Fibers and Composites Laboratory College of Aerospace Science and EngineeringNational University of Defense Technology Science and Technology on Scramjet Laboratory College of Aerospace Science and EngineeringNational University of Defense Technology

A thin radar-infrared stealth-compatible structure with reflectivity below -10 dB in the whole radar X wave band and infrared emissivity less than 0.3 in the infrared region of 8μm-14 μm is reported. The designed stealth-compatible structure consists of metallic frequency selective surface （MFSS）, resistive frequency selective surface （RFSS）, and metal backing from the top down, and it is only 2. l-mm thick. The MFSS is made up of some divided low infrared emissivity metal copper films, and the RFSS consists of a capacitive array of square resistive patches. They are placed close together, working as an admittance sheet because of a mutual influence between them, and the equivalent admittance sheet greatly reduces the thickness of the whole structure. The proposed stealth-compatible structure is verified both by simulations and by experimental results. These results indicate that our proposed stealth-compatible structure has potential applications in stealth fields.

关键词： radar-infrared stealth-compatible structure absorbing property infrared emissivity

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Study of the decay D0 → K¯ 0π−e+νe

arXiv

引用

arXiv 2018年

作者： Ablikim, M. Achasov, M.N. Ahmed, S. Albrecht, M. Alekseev, M. Amoroso, A. An, F.F. An, Q. Bai, Y. Bakina, O. Ferroli, R. Baldini Ban, Y. Begzsuren, K. Bennett, D.W. Bennett, J.V. Berger, N. Bertani, M. Bettoni, D. Bianchi, F. Boger, E. Boyko, I. Briere, R.A. Cai, H. Cai, X. Calcaterra, A. Cao, G.F. Cetin, S.A. Chai, J. Chang, J.F. Chang, W.L. Chelkov, G. Chen, G. Chen, H.S. Chen, J.C. Chen, M.L. Chen, P.L. Chen, S.J. Chen, X.R. Chen, Y.B. Cheng, W. Chu, X.K. Cibinetto, G. Cossio, F. Dai, H.L. Dai, J.P. Dbeyssi, A. Dedovich, D. Deng, Z.Y. Denig, A. Denysenko, I. Destefanis, M. de Mori, F. Ding, Y. Dong, C. Dong, J. Dong, L.Y. Dong, M.Y. Dou, Z.L. Du, S.X. Duan, P.F. Fang, J. Fang, S.S. Fang, Y. Farinelli, R. Fava, L. Feldbauer, F. Felici, G. Feng, C.Q. Fritsch, M. Fu, C.D. Gao, Q. Gao, X.L. Gao, Y. Gao, Y.G. Gao, Z. Garillon, B. Garzia, I. Gilman, A. Goetzen, K. Gong, L. Gong, W.X. Gradl, W. Greco, M. Gu, L.M. Gu, M.H. Gu, Y.T. Guo, A.Q. Guo, L.B. Guo, R.P. Guo, Y.P. Guskov, A. Haddadi, Z. Han, S. Hao, X.Q. Harris, F.A. He, K.L. Heinsius, F.H. Held, T. Heng, Y.K. Hou, Z.L. Hu, H.M. Hu, J.F. Hu, T. Hu, Y. Huang, G.S. Huang, J.S. Huang, X.T. Huang, X.Z. Huang, Z.L. Hussain, T. Andersson, W. Ikegami Imoehl, W. Irshad, M. Ji, Q. Ji, Q.P. Ji, X.B. Ji, X.L. Jiang, H.L. Jiang, X.S. Jiang, X.Y. Jiao, J.B. Jiao, Z. Jin, D.P. Jin, S. Jin, Y. Johansson, T. Kalantar-Nayestanaki, N. Kang, X.S. Kavatsyuk, M. Ke, B.C. Keshk, I.K. Khan, T. Khoukaz, A. Kiese, P. Kiuchi, R. Kliemt, R. Koch, L. Kolcu, O.B. Kopf, B. Kuemmel, M. Kuessner, M. Kupsc, A. Kurth, M. Kühn, W. Lange, J.S. Larin, P. Lavezzi, L. Leiber, S. Leithoff, H. Li, C. Li, Cheng Li, D.M. Li, F. Li, F.Y. Li, G. Li, H.B. Li, H.J. Li, J.C. Li, J.W. Li, K.J. Li, Kang Li, Ke Li, Lei Li, P.L. Li, P.R. Li, Q.Y. Li, T. Li, W.D. Li, W.G. Institute of High Energy Physics Beijing100049 China Beihang University Beijing100191 China Beijing Institute of Petrochemical Technology Beijing102617 China Bochum Ruhr-University BochumD-44780 Germany Carnegie Mellon University PittsburghPA15213 United States Central China Normal University Wuhan430079 China China Center of Advanced Science and Technology Beijing100190 China COMSATS Institute of Information Technology Lahore Defence Road Off Raiwind Road Lahore54000 Pakistan Fudan University Shanghai200443 China Novosibirsk630090 Russia GSI Helmholtzcentre for Heavy Ion Research GmbH DarmstadtD-64291 Germany Guangxi Normal University Guilin541004 China Guangxi University Nanning530004 China Hangzhou Normal University Hangzhou310036 China Helmholtz Institute Mainz Johann-Joachim-Becher-Weg 45 MainzD-55099 Germany Henan Normal University Xinxiang453007 China Henan University of Science and Technology Luoyang471003 China Huangshan College Huangshan245000 China Hunan Normal University Changsha410081 China Hunan University Changsha410082 China Indian Institute of Technology Madras Chennai600036 India Indiana University BloomingtonIN47405 United States INFN Laboratori Nazionali di Frascati FrascatiI-00044 Italy INFN University of Perugia PerugiaI-06100 Italy INFN Sezione di Ferrara FerraraI-44122 Italy University of Ferrara FerraraI-44122 Italy Institute of Physics and Technology Peace Ave. 54B Ulaanbaatar13330 Mongolia Johannes Gutenberg University of Mainz Johann-Joachim-Becher-Weg 45 MainzD-55099 Germany Joint Institute for Nuclear Research Dubna Moscow region141980 Russia Justus-Liebig-Universitaet Giessen II. Physikalisches Institut Heinrich-Buff-Ring 16 GiessenD-35392 Germany KVI-CART University of Groningen GroningenNL-9747 AA Netherlands Lanzhou University Lanzhou730000 China Liaoning University Shenyang110036 China Nanjing Normal University Nanjing210023 China Nanjing University Nanjing210093

We report a study of the decay D0 → K¯ 0π−e+νe based on a sample of 2.93 fb−1 e+e− annihilation data collected at the center-of-mass energy of 3.773 GeV with the BESIII detector at the BEPCII collider. The total branching fraction is determined to be B(D0 → K¯ 0π−e+νe) = (1.434 ± 0.029(stat.) ± 0.032(syst.))%, which is the most precise to date. According to a detailed analysis of the involved dynamics, we find this decay is dominated with the K∗(892)− contribution and present an improved measurement of its branching fraction to be B(D0 → K∗(892)−e+νe) = (2.033 ± 0.046(stat.) ± 0.047(syst.))%. We further access their hadronic form-factor ratios for the first time as rV = V (0)/A1(0) = 1.46 ± 0.07(stat.) ± 0.02(syst.) and r2 = A2(0)/A1(0) = 0.67 ± 0.06(stat.) ± 0.01(syst.). In addition, we observe a significant K¯ 0π− S-wave component accounting for (5.51 ± 0.97(stat.) ± 0.62(syst.))% of the total decay rate. Copyright © 2018, The Authors. All rights reserved.

关键词： Shear waves

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Ultrafast charge transfer processes accompanying KLL Auger decay in aqueous KCl solution

arXiv

引用

arXiv 2017年

作者： Céolin, D. Kryzhevoi, N.V. Nicolas, Ch Pokapanich, W. Choksakulporn, S. Songsiriritthigul, P. Saisopa, Th Rattanachai, Y. Utsumi, Y. Palaudoux, J. Öhrwall, G. Rueff, J.P. Synchrotron SOLEIL l’Orme des Merisiers Saint-Aubin Gif-sur-Yvette CedexF-91192 France Theoretical Chemistry Institute of Physical Chemistry Heidelberg University Im Neuenheimer Feld 229 Heidelberg69120 Germany Faculty of Science Nakhon Phanom University Nakhon Phanom48000 Thailand Synchrotron Light Research Institute Nakhon Ratchasima30000 Thailand NANOTEC-SUT Center of Excellence on Advanced Functional Nanomaterials School of Physics Suranaree University of Technology Nakhon Ratchasima30000 Thailand Department of Applied Physics Faculty of Sciences and Liberal Arts Rajamangala University of Technology Isan Nakhon Ratchasima30000 Thailand CNRS UMR 7614 Laboratoire de Chimie Physique-Matière et Rayonnement ParisF-75005 France Sorbonne Universités UPMC Université Paris 06 UMR 7614 Laboratoire de Chimie Physique-Matière et Rayonnement ParisF-75005 France MAX IV Laboratory P.O. Box 118 LundSE-22100 Sweden

X-ray photoelectron spectroscopy (XPS) and KLL Auger spectra of aqueous KCl solution were measured for the K+ and Cledges. While the XPS spectra of potassium and chloride have similar structures, both exhibiting only weak satellite structures near the main line, the Auger spectra of these isoelectronic ions differ dramatically. A very strong satellite peak was found in the K+ KLL Auger spectrum at the low kinetic energy side of the 1D state. Using equivalent core models and ab initio calculations this spectral structure was assigned to electron transfer processes from solvent water molecules to the solvated K+ cation. Contrary to the potassium case, no extra peak was found in the KLL Auger spectrum of solvated Cl- indicating on a strong dependence of the underlying processes on ionic charge. The observed charge transfer processes are suggested to play an important role in charge redistribution following single and multiple core-hole creation in atomic and molecular systems placed into an environment. Copyright © 2017, The Authors. All rights reserved.

关键词： Charge transfer

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Ultralow-Frequency Collective Compression Mode and Strong Interlayer Coupling in Multilayer Black Phosphorus

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Physical Review Letters 2016年第8期116卷 087401-087401页

作者： Shan Dong Anmin Zhang Kai Liu Jianting Ji Y. G. Ye X. G. Luo X. H. Chen Xiaoli Ma Yinghao Jie Changfeng Chen Xiaoqun Wang Qingming Zhang Department of Physics Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices Renmin University of China Beijing 100872 People’s Republic of China Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics University of Science and Technology of China and Key Laboratory of Strongly-Coupled Quantum Matter Physics Chinese Academy of Sciences Hefei Anhui 230026 People’s Republic of China Collaborative Innovation Center of Advanced Microstructures Nanjing 210093 People’s Republic of China High Magnetic Field Laboratory Chinese Academy of Sciences Hefei Anhui 230031 People’s Republic of China Department of Physics and High Pressure Science and Engineering Center University of Nevada Las Vegas Nevada 89154 USA Department of Physics and Astronomy Shanghai Jiao Tong University Shanghai 200240 People’s Republic of China

The recent renaissance of black phosphorus (BP) as a two-dimensional (2D) layered material has generated tremendous interest, but its unique structural characters underlying many of its outstanding properties still need elucidation. Here we report Raman measurements that reveal an ultralow-frequency collective compression mode (CCM) in BP, which is unprecedented among similar 2D layered materials. This novel CCM indicates an unusually strong interlayer coupling, and this result is quantitatively supported by a phonon frequency analysis and first-principles calculations. Moreover, the CCM and another branch of low-frequency Raman modes shift sensitively with changing number of layers, allowing an accurate determination of the thickness up to tens of atomic layers, which is considerably higher than previously achieved by using high-frequency Raman modes. These findings offer fundamental insights and practical tools for further exploration of BP as a highly promising new 2D semiconductor.

关键词： Heterostructures Multilayer thin films Photonic crystals Piezoelectrics Raman spectroscopy

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Interfacial Magnetization: Spatially Resolved Large Magnetization in Ultrathin BiFeO3(Adv. Mater. 32/2017)

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advanced Materials 2017年第32期29卷

作者： Er‐Jia Guo Jonathan R. Petrie Manuel A. Roldan Qian Li Ryan D. Desautels Timothy Charlton Andreas Herklotz John Nichols Johan van Lierop John W. Freeland Sergei V. Kalinin Ho Nyung Lee Michael R. Fitzsimmons Quantum Condensed Matter Division Oak Ridge National Laboratory Oak Ridge TN 37831 USA Material Science and Technology Division Oak Ridge National Laboratory Oak Ridge TN 37831 USA Imaging and Characterization Core Lab King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi Arabia Center for Nanophase Materials Sciences and Institute for Functional Imaging of Materials Oak Ridge National Laboratory Oak Ridge TN 37831 USA Department of Physics and Astronomy University of Manitoba Winnipeg Manitoba R3T 2N2 Canada Advanced Photon Source Argonne National Laboratory Argonne IL 60439 USA Department of Physics and Astronomy University of Tenessee Knoxville TN 37996 USA

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Fermiology and superconductivity of topological surface states in PdTe2

arXiv

引用

arXiv 2017年

作者： Clark, O.J. Neat, M.J. Okawa, K. Bawden, L. Marković, I. Mazzola, F. Feng, J. Sunko, V. Riley, J.M. Meevasana, W. Fujii, J. Vobornik, I. Kim, T.K. Hoesch, M. Sasagawa, T. Wahl, P. Bahramy, M.S. King, P.D.C. SUPA School of Physics and Astronomy University of St. Andrews St. AndrewsKY16 9SS United Kingdom Materials and Structures Laboratory Tokyo Institute of Technology Kanagawa226-8503 Japan Max Planck Institute for Chemical Physics of Solids Nöthnitzer Straße 40 Dresden01187 Germany CAS SEID SIP 398 Ruoshui Road Suzhou215123 China Diamond Light Source Harwell Campus DidcotOX11 0DE United Kingdom School of Physics Center of Excellence on Advanced Functional Materials Suranaree University of Technology Nakhon Ratchasima30000 Thailand ThEP Commission of Higher Education Bangkok10400 Thailand -CNR Laboratorio TASC in Area Science Park S.S.14 Km 163.5 TriesteI-34149 Italy Quantum-Phase Electronics Center Department of Applied Physics University of Tokyo Tokyo113-8656 Japan Wako351-0198 Japan

We study the low-energy surface electronic structure of the transition-metal dichalcogenide superconductor PdTe2 by spin- and angle-resolved photoemission, scanning tunneling microscopy, and density-functional theory-based supercell calculations. Comparing PdTe2 with its sister compound PtSe2, we demonstrate how enhanced inter-layer hopping in the Te-based material drives a band inversion within the anti-bonding p-orbital manifold well above the Fermi level. We show how this mediates spin-polarised topological surface states which form rich multi-valley Fermi surfaces with complex spin textures. Scanning tunneling spectroscopy reveals type-II superconductivity at the surface, and moreover shows no evidence for an unconventional component of its superconducting order parameter, despite the presence of topological surface states. Copyright © 2017, The Authors. All rights reserved.

关键词： Transition metals

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Cover Picture: Improving the Electrocatalytic Activity of Pt Monolayer Catalysts for Electrooxidation of Methanol, Ethanol and Ammonia by Tailoring the Surface Morphology of the Supporting Core (ChemElectroChem 4/2016)

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ChemElectroChem 2016年第4期3卷 504-504页

作者： Jie Liu Bin Chen Zhengyang Ni Yida Deng Xiaopeng Han Wenbin Hu Prof. Cheng Zhong Key Laboratory of Advanced Ceramics and Machining Technology (Ministry of Education) Tianjin 300072 China State Key Laboratory of Metal Matrix Composites Shanghai Jiao Tong University Shanghai 200240 China Tianjin Key Laboratory of Composite and Functional Materials Department of Materials Science and Engineering Tianjin 300072 China

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Effect of Sintering Additives on Properties of Si_3N_4BN composites Fabricated via Die Pressing and Precursor Infiltration and Pyrolysis Route

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Journal of Wuhan University of technology(Materials science) 2014年第5期29卷 891-894页

作者：刘坤张长瑞 LI Bin WANG Siqing CAO Feng Science and Technology on Advanced Ceramic Fibers and Composites Laboratory College of Aerospace Science and Engineering National University of Defense Technology

The Si3N4-BN composites have been prepared via die pressing and precursor infiltration and pyrolysis route using borazine as precursor, and the effect of sintering additives on properties of the composites has been investigated. After sintering additives are adopted, the a to β phase transition of Si3N4 and the mechanical properties of the composites at both room temperature and high temperature are all increased with small extent. When using Y2O3＋Al2O3 as additives, the phase transition of Si3N4 and the mechanical properties of the composites have better results. The β-Si3N4 content is 17.47%. The flexural strength, elastic modulus and fracture toughness of the composites are 188.74 MPa, 84.34 GPa and 2.96 MPa.m1/2, respectively. After exposed at 1 000 ℃ in the air for 15 min, the flexural strength of the composites is 154.62 MPa with a residual ratio of 81.92%. The elongated β-Si3N4 grains appear in all composites with different sintering additives. Relatively more rod like β-Si3N4 grains can be observed in composites with Y2O3＋Al2O3 as additives, making it to possess better mechanical properties.

关键词： silicon nitride boron nitride borazine composites sintering additives

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Controllable Synthesis and Ceramization of Fe/Si/C Ceramic Precursors

Controllable Synthesis and Ceramization of Fe/Si/C Ceramic P...

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第二届海峡两岸功能材料科技与产业峰会（2015）

作者： Tengfei MAO Qiance ZHANG Yanzi GOU State Key Laboratory of Advanced Ceramic Fibers and Composites College of Aerospace Science and Engineering National University of Defense Technology

Two novel self-assembled ceramic precursors containing iron,PFS and PFS-b-PS,were synthesized through the homopolymerization of 1,1’-ferrocenylsilane and the copolymerization between 1,1’-ferrocenylsilane and styrene separately,both via living anionic ***,the structures,elemental compositions and molecular weights were characterized as well,by FT-IR,NMR,EDS and GPC *** the first time,the homopolymerization mechanism of 1,1’-ferrocenylsilane was simulated,using

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