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Research on Silicon-Based Terahertz Communication integrated circuits

Chinese Journal of Electronics 2022年第3期31卷 516-533页

作者： ZHOU Peigen CHEN Jixin TANG Siyuan YU Jiayang WANG Chen LI Huanbo LU Haiyan YAN Pinpin HOU Debin CHEN Zhe HONG Wei State Key Laboratory of Millimeter Waves Southeast University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

With the increasing number of users and emerging new applications, the demand for mobile data traffic is growing rapidly. The limited spectrum resources of the traditional microwave and millimeter-wave frequency bands can no longer support the future wireless communication systems with higher system capacity and data throughput. The terahertz(THz) frequency bands have abundant spectrum resources, which can provide sufficient bandwidth to expand channel capacity and increase transmission data rate. In addition, with the rapid development of silicon-based semiconductor technology,its characteristic size keeps decreasing, and the radio frequency performance of active devices is gradually approaching the performance of III-V semiconductor technology. The realization of THz communication systems based on low-cost, high-stability, and easy-to-integrate silicon-based process has become a feasible solution. This review summarizes the reported silicon-based THz communication systems, as well as the key sub-circuit chips in these systems, including the local oscillator, power amplifier, low noise amplifier, on-chip antenna and transceiver chip, etc.

关键词： abundant spectrum resources silicon-based process silicon-based terahertz communication integrated circuits channel capacity silicon-based semiconductor technology III-V semiconductor technology mobile data traffic millimetre wave integrated circuits future wireless communication systems millimetre wave communication radio frequency performance traditional microwave frequency bands higher system capacity data throughput mobile radio transmission data rate radio transceivers key sub-circuit chips reported silicon-based THz communication systems millimeter-wave frequency bands

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Terahertz 4th-Order Downconversion Mixer Using Symmetric MOS Varactors 15

Terahertz 4th-Order Downconversion Mixer Using Symmetric MOS...

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15th International Conference on Microwave and Millimeter Wave technology, ICMMT 2023

作者： Yingdong, Zhao Kai, Zhang Fei, Yang Southeast University School of Electronic Science & Engineering China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory China

ISBN: (纸本)9798350338874

A 4th-order subharmonic downconversion mixer with a radio frequency (RF) of 480 GHz and intermediate frequency (IF) of 20 GHz that employs MOS symmetric varactors (SVARs) is demonstrated in 65-nm CMOS. The mixer achieves the minimum conversion loss of 25 dB at 20 GHz, VG = 0.5 V and VNW = 1 V. The return loss of the output port can reach nearly 30 dB, achieving a good matching effect, and can operate at a LO power of 9 dBm. The 4-GHz IF bandwidth spans between 18 and 22 GHz. © 2023 IEEE.

关键词： Varactors

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A 2-18 GHz 6-Bit GaAs Positive Voltage Driven Digitally Controlled Attenuator for Phased Array

A 2-18 GHz 6-Bit GaAs Positive Voltage Driven Digitally Cont...

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2023 IEEE International Symposium on Antennas and Propagation, ISAP 2023

作者： Yan, Liwei Peng, Shuang Zhang, Kai Wang, Ziqiang Liu, Chenxi Yang, Fei Wves Southeast University State Key Laboratory of Millimeter Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

ISBN: (纸本)9798350341140

In this paper, an ultra-wideband 6-bit digitally controlled attenuator MMIC for the active phased array that integrates positive voltage digital driving circuits was developed, utilizing GaAs enhanced and depletion mode p-HEMT process. The attenuator design operates in an ultra-wide bandwidth of 2-18 GHz, with a dynamic attenuation range of 0.5-31.5 dB and an attenuation accuracy of less than 0.9 dB over the entire frequency band. The integrated DCFL (direct coupling field effect transistor logic) inverter circuit on the chip enables direct control of the attenuator with a positive voltage while occupying a chip area of only 2.7 mm2. © 2023 IEEE.

关键词： attenuator E/D p-HEMT GaAs MMIC ultra-wideband circuit

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An Aging Small-signal Modeling Method of Microwave Transistors Using GA-ELM Neural Network

An Aging Small-signal Modeling Method of Microwave Transisto...

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2023 International Symposium of Electronics Design Automation, ISEDA 2023

作者： Cheng, Lin Lu, Hongliang Guo, Xiuxiu Yan, Silu Cheng, Wei Zhang, Yuming School of Microelectronics Xidian University Xi'an710071 China Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China

ISBN: (纸本)9798350304510

In this paper, an aging small-signal S-parameters modeling method for microwave transistors is explored using a genetic algorithm (GA) to optimize the Extreme Learning Machine (ELM) neural network. A dual GA-ELM neural network architecture was used to simulate the fresh S-parameters of InP heterojunction bipolar transistor (HBT) devices and the degradation of S-parameters after accelerated aging, respectively. Good agreement was achieved between measured and predicted results of the fresh and aging S-parameters within a frequency range of 0.1 to 40 GHz. © 2023 IEEE.

关键词： Scattering parameters

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Blind Calibration Algorithm for Time-interleaved Analog-to-Digital Conversion System 15

Blind Calibration Algorithm for Time-interleaved Analog-to-D...

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15th International Conference on Microwave and Millimeter Wave technology, ICMMT 2023

作者： Jiang, Ziqian Xu, Jie Li, Xiaopeng Zhang, Youtao Zhang, Changchun Guo, Yufeng Zhang, Yi College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9798350338874

This paper presents a blind calibration algorithm for a multi-channel time-interleaved analog-to-digital conversion system implemented in MATLAB/simulink. The behavior level simulation of the calibration system is carried out. The simulation results show that the signal-to-noise ratio (SNR), signal-to-noise-distortion ratio(SNDR), and spurious-free dynamic range (SFDR) of the signal corrected by the calibration system are greatly improved, which lays a solid foundation for the subsequent digital circuit design. Behavioral simulations are presented for a 4-channel 10-bit TI-ADC in order to verify the effectiveness of the proposed method. Using the introduced calibration technique, SFDR increased by 33 dB on average. © 2023 IEEE.

关键词： Analog to digital conversion

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A micro transfer-printer for high-accuracy optoelectronic and photonic integration 16

A micro transfer-printer for high-accuracy optoelectronic an...

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16th IEEE International Conference on Solid-State and integrated Circuit technology, ICSICT 2022

作者： Wang, Yuxuan Li, Guanyu Kong, Yuchang Zheng, Youdou Shi, Yi Nanjing University School of Electronic Science and Engineering Nanjing210093 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210000 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

A precise integration of the optoelectronic device onto a functional platform, such as silicon photonics, LiNbO3 photonics or Si CMOS, is the key approach that makes the union of the different parts. Here, we propose a micro transfer-printer (μ-TPer) designing for high-accuracy optoelectronic and photonic integration. The used μ-TPer equips a multi-axis movement stage and visual-recognizing system, which recognizes the alignment marks and operates the aligning actions precisely. To employ this μ-TPer, a basic photonic integrated circuit of InP PD onto silicon microring resonator are realized, where the misalignment less than 1 μm can be obtained optimally. This equipment enables a powerful manufacturing route for the various optoelectronic and photonic integrations. © 2022 IEEE.

关键词： Indium phosphide

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Design of a RF Doherty Power Amplifier Based on Handset Application 15

Design of a RF Doherty Power Amplifier Based on Handset Appl...

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15th International Conference on Microwave and Millimeter Wave technology, ICMMT 2023

作者： Tang, Yujie Zhou, Yingjie Zhou, Hao Yang, Lei Zheng, Yuan Guo, Yufeng Zhang, Yi College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing210023 China Nanjing GuoBo Electronics Co. Ltd Nanjing210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China State Key Laboratory of Millimeter Waves Nanjing210096 China

ISBN: (纸本)9798350338874

A Doherty Power Amplifier (PA) with high efficiency and high linearity that can be used in smart communication devices such as mobile phones in the sub-6GHz frequency band is proposed. This Doherty PA uses the InGaP/GaAs hetero-junction bipolar transistor (HBT) process. Compared with the traditional Doherty PA, the PA in this paper combines the choke inductance of the output collector and the phase compensation circuit with the output circuit of the Doherty PA respectively, which reduces the number of components required for matching. From the simulation, when the power supply voltage of the Doherty power amplifier is 4.2V, the operating frequency is 3.5GHz and the output power is 26.5dBm, the power added efficiency (PAE) reaches 34.5%, at the same time when using a 10MHz bandwidth LTE-3GPPFDD modulated signal the Adjacent Channel Power Ratio (ACPR) below to -35dBc. © 2023 IEEE.

关键词： Efficiency

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Terahertz 4th-Order Downconversion Mixer Using Symmetric MOS Varactors

Terahertz 4th-Order Downconversion Mixer Using Symmetric MOS...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Zhao Yingdong Zhang Kai Yang Fei School of Electronic Science & Engineering Southeast University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

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Reliable and broad-range layer identification of Au-assisted exfoliated large area MoS_(2)and WS_(2)using reflection spectroscopic fingerprints

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Nano Research 2022年第9期15卷 8470-8478页

作者： Bo Zou Yu Zhou Yan Zhou Yanyan Wu Yang He Xiaonan Wang Jinfeng Yang Lianghui Zhang Yuxiang Chen Shi Zhou Huaixin Guo Huarui Sun School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of Technology ShenzhenShenzhen 518055China Collaborative Innovation Center of Extreme OpticsShanxi UniversityTaiyuan 030006China State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China University of Science and Technology of China Hefei 230026China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China

The emerging Au-assisted exfoliation technique enables the production of a wealth of large-area and high-quality ultrathin two dimensional(2D)***,damage-free,and reliable determination of the layer number of such 2D films can greatly promote layer-dependent physical studies and device ***,an optical method has been developed for simple,high throughput,and accurate determination of the layer number for Au-assisted exfoliated MoS_(2)and WS_(2)films in a broad thickness *** method is based on quantitative analysis of layer-dependent white light reflection spectra(WLRS),revealing that the intensity of exciton-induced reflection peaks can be used as a clear indicator for identifying the layer *** simple yet robust method will facilitate fundamental studies on layer-dependent optical,electrical,and thermal properties and device applications of 2D *** technique can also be readily combined with photoluminescence(PL)and Raman spectroscopies to study other layer-dependent physical properties of 2D materials.

关键词： Au-assisted exfoliation MoS_(2)and WS_(2) layer identification white light reflection spectra excitonic peaks

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RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

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Journal of Semiconductors 2022年第9期43卷 64-67页

作者： Lishu Wu Jiayun Dai Yuechan Kong Tangsheng Chen Tong Zhang Joint International Research Laboratory of Information Display and Visualization School of Electronic Science and EngineeringSoutheast UniversityNanjing 210096China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China Key Laboratory of Micro-Inertial Instrument and Advanced Navigation Technology Ministry of EducationSchool of Instrument Science and EngineeringSoutheast UniversityNanjing 210096China

This letter presents the fabrication of InP double heterojunction bipolar transistors(DHBTs)on a 3-inch flexible substrate with various thickness values of the benzocyclobutene(BCB)adhesive bonding layer,the corresponding thermal resistance of the InP DHBT on flexible substrate is also measured and *** DHBT on a flexible substrate with 100 nm BCB obtains cut-off frequency f_(T)=358 GHz and maximum oscillation frequency f_(MAX)=530 ***,the frequency performance of the InP DHBT on flexible substrates at different bending radii are *** is shown that the bending strain has little effect on the frequency characteristics(less than 8.5%),and these bending tests prove that InP DHBT has feasible flexibility.

关键词： InP DHBT thermal resistance radio frequency bending

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