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检索条件"机构=Science and Technology of Monolithic Integrated and Modules Circuits Key Laboratory"
193 条 记 录,以下是91-100 订阅
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Current Gain Increase by SiN_x Passivation in InGaAs/InP Double Heterostructure Bipolar Transistors
Current Gain Increase by SiN_x Passivation in InGaAs/InP Dou...
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IEEE International Conference on Communication Problem-Solving
作者: Junling Xie Wei Cheng Yuan Wang Bin Niu Long Chang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
Passivation of InGaAs/InP double heterostructure bipolar transistors (DHBTs) with room temperature SiN_x deposition was investigated. Due to reduction of surface damages during SiN_x deposition, current gain improveme... 详细信息
来源: 评论
Transient simulation for the thermal design optimization of pulse operated AlGaN/GaN HEMTs
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Micromachines 2020年 第1期11卷 76-76页
作者: Guo, Huaixin Chen, Tangsheng Shi, Shang Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility... 详细信息
来源: 评论
Study on 2000V SiC JBS Diodes
Study on 2000V SiC JBS Diodes
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2013 3rd International Conference on Electric and Electronics(EEIC 2013)
作者: Gang Chen Lin Wang Runhua Huang Song Bai Yun Li Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
High voltage 4H-SiC Ti schottky junction barrier schottky(JBS) diode with breakdown voltage of 2000 V and forward current of 2A has been fabricated. A low reverse leakage current below 1.9×10A/cm at the bias vo... 详细信息
来源: 评论
100GHz Static Frequency Divider Based On 0.5μm InP/InGaAs DHBT
100GHz Static Frequency Divider Based On 0.5μm InP/InGaAs D...
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2015 International Conference on Communication Problem-Solving(ICCP)
作者: Bin Niu Wei Cheng You-Tao Zhang Yuan Wang Hai-Yan Lu Long Chang Jun-Ling Xie Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
A static divide-by-2 frequency divider based on InP/InGaAs DHBT technology is *** chip thin film resistor and capacitor were *** levels of interconnect were *** collector design and 0.5μm emitter width enable the sta... 详细信息
来源: 评论
Growth of compressively-strained GaN films on Si(111) substrates with thick AlGaN transition and AlGaN superlattice buffer layers
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Physica Status Solidi (C) Current Topics in Solid State Physics 2016年 第5-6期13卷 181-185页
作者: Pan, Lei Dong, Xun Ni, Jinyu Li, Zhonghui Yang, Qiankun Peng, Daqing Li, Chuanhao Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
In this paper, crack-free GaN films with step-graded AlGaN transition layer and AlGaN superlattice layer as buffer layers were grown on Si(111) substrate by metal-organic chemical vapor deposition(MOCVD). The combinat... 详细信息
来源: 评论
107W CW SiC MESFET with 48.1% PAE
107W CW SiC MESFET with 48.1% PAE
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2013 IEEE 5th International Symposium on Microwave,Antenna,Propagation and EMC Technologies for Wireless Communications
作者: Yonghong Tao Song Bai Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
In the paper,30mm high-power SiC MESFETs have been *** load-pull testing at 1.5 GHz and 48V drain to source voltage,packaged 2 ×30mm SiC MESFET transistors were demonstrated with output power higher than 107W wit... 详细信息
来源: 评论
Current Gain Increase by SiNx Passivation in InGaAs/InP Double Heterostructure Bipolar Transistors
Current Gain Increase by SiNx Passivation in InGaAs/InP Doub...
收藏 引用
2015 International Conference on Communication Problem-Solving(ICCP)
作者: Junling Xie Wei Cheng Yuan Wang Bin Niu Long Chang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
Passivation of InGaAs/InP double heterostructure bipolar transistors(DHBTs) with room temperature SiN deposition was investigated. Due to reduction of surface damages during SiN deposition, current gain improvement ... 详细信息
来源: 评论
Research and Implementation of 150W SiC Internally Match and Power Combiner at S Band
Research and Implementation of 150W SiC Internally Match and...
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2013 IEEE 5th International Symposium on Microwave,Antenna,Propagation and EMC Technologies for Wireless Communications
作者: Gang Chen Shichang Zhong Yuchao Li Song Bai Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
As one of the third generation semiconductor materials,SiC has many advantages,such as high-power,high gate-drain breakdown voltage,heat stability and anti-radiation *** it is of high value for study and application *... 详细信息
来源: 评论
0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Process
0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Pr...
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17th China International Forum on Solid State Lighting &2020 International Forum on Wide Bandgap Semiconductors (第十七届中国国际半导体照明论坛暨2020国际第三代半导体论坛)
作者: Wei Huang Suyuan Wang Zhu Liu Junyun Zhang Nianning Huang Xinqiang Wang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D State Key Laboratory of Artificial Micro structure and Mesoscopic Physics School of PhysicsPeking U
The resolution enhancement lithography assisted by chemical shrink(RELACS)is presented to increase the resolution of the i-line *** have succeeded in developing an advanced i-line lithography process based on i-line s... 详细信息
来源: 评论
Design of a RF Doherty Power Amplifier Based on Handset Application  15
Design of a RF Doherty Power Amplifier Based on Handset Appl...
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15th International Conference on Microwave and Millimeter Wave technology, ICMMT 2023
作者: Tang, Yujie Zhou, Yingjie Zhou, Hao Yang, Lei Zheng, Yuan Guo, Yufeng Zhang, Yi College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing210023 China Nanjing GuoBo Electronics Co. Ltd Nanjing210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China State Key Laboratory of Millimeter Waves Nanjing210096 China
A Doherty Power Amplifier (PA) with high efficiency and high linearity that can be used in smart communication devices such as mobile phones in the sub-6GHz frequency band is proposed. This Doherty PA uses the InGaP/G... 详细信息
来源: 评论