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IEEE International Conference on Communication Problem-Solving

作者： Junling Xie Wei Cheng Yuan Wang Bin Niu Long Chang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

ISBN: (纸本)9781467365451

Passivation of InGaAs/InP double heterostructure bipolar transistors (DHBTs) with room temperature SiN_x deposition was investigated. Due to reduction of surface damages during SiN_x deposition, current gain improvement was observed at low bias voltage region. According to our analysis, a drastic decrease of surface recombination related current component at base-emitter junction occurred after passivation, which is crucial for improving the device reliability.

关键词： InP Heterostructure bipolar transistor Silicon nitride Passivation

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Transient simulation for the thermal design optimization of pulse operated AlGaN/GaN HEMTs

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Micromachines 2020年第1期11卷 76-76页

作者： Guo, Huaixin Chen, Tangsheng Shi, Shang Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility transistors (HEMT) used in high power amplifiers are systematically investigated by using three-dimensional simulation with the finite element method. To improve the calculation accuracy, the nonlinear thermal conductivities and near-junction region of GaN chip are considered and treated appropriately in our numerical analysis. The periodic transient pulses temperature and temperature distribution are analyzed to estimate thermal response when GaN amplifiers are operating in pulsed mode with kilowatt-level power, and the relationships between channel temperatures and pulse width, gate structures, and power density of GaN device are analyzed. Results indicate that the maximal channel temperature and thermal impedance of device are considerably influenced by pulse width and power density effects, but the changes of gate fingers and gate width have no effect on channel temperature when the total gate width and active area are kept constant. Finally, the transient thermal response of GaN amplifier is measured using IR thermal photogrammetry, and the correctness and validation of the simulation model is verified. The study of transient simulation is demonstrated necessary for optimal designs of pulse-operated AlGaN/GaN HEMTs. © 2020 by the authors.

关键词： Gallium nitride

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Study on 2000V SiC JBS Diodes

Study on 2000V SiC JBS Diodes

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2013 3rd International Conference on Electric and Electronics(EEIC 2013)

作者： Gang Chen Lin Wang Runhua Huang Song Bai Yun Li Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

High voltage 4H-SiC Ti schottky junction barrier schottky（JBS） diode with breakdown voltage of 2000 V and forward current of 2A has been fabricated. A low reverse leakage current below 1.9×10A/cm at the bias voltage of-2kV has been obtained. The forward on-state current was 2A at V = 1.9V and 5A at VF = 3V. The chip is 2.3mm×2.3mm. The turn-on voltage is about 1.0V. The on-state resistance is 19.3m?·cm. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was packaged with SMB mode. The thickness of the Nepilayer is 17μm, and the doping concentration is 4.6×10cm. A floating guard rings edge termination have been used to improve the effectiveness of the edge termination technique. By using Ti/Ni/Ag multilayer metal structure, the double side Ag process of 4H-SiC JBS diode is formed. We use the PECVD SiN/SiO as the passivation dielectric and a non photosensitive polyamide as the passivation in the end.

关键词： 4H-SiC JBS Floating guard rings

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100GHz Static Frequency Divider Based On 0.5μm InP/InGaAs DHBT

100GHz Static Frequency Divider Based On 0.5μm InP/InGaAs D...

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2015 International Conference on Communication Problem-Solving(ICCP)

作者： Bin Niu Wei Cheng You-Tao Zhang Yuan Wang Hai-Yan Lu Long Chang Jun-Ling Xie Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

A static divide-by-2 frequency divider based on InP/InGaAs DHBT technology is *** chip thin film resistor and capacitor were *** levels of interconnect were *** collector design and 0.5μm emitter width enable the sta... 详细信息

关键词： m InP/InGaAs DHBT InGaAs InP Static Frequency Divider Based On 0.5

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Growth of compressively-strained GaN films on Si(111) substrates with thick AlGaN transition and AlGaN superlattice buffer layers

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Physica Status Solidi (C) Current Topics in Solid State Physics 2016年第5-6期13卷 181-185页

作者： Pan, Lei Dong, Xun Ni, Jinyu Li, Zhonghui Yang, Qiankun Peng, Daqing Li, Chuanhao Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

In this paper, crack-free GaN films with step-graded AlGaN transition layer and AlGaN superlattice layer as buffer layers were grown on Si(111) substrate by metal-organic chemical vapor deposition(MOCVD). The combination of both buffers effectively improves the properties of GaN layer. With the optimization of the buffer structures, high quality compressively-strained GaN layers with thickness up to 3.6 μm have been obtained on Si(111) substrates. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

关键词： Substrates

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107W CW SiC MESFET with 48.1% PAE

107W CW SiC MESFET with 48.1% PAE

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2013 IEEE 5th International Symposium on Microwave,Antenna,Propagation and EMC Technologies for Wireless Communications

作者： Yonghong Tao Song Bai Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

ISBN: (纸本)9781467360760

In the paper,30mm high-power SiC MESFETs have been *** load-pull testing at 1.5 GHz and 48V drain to source voltage,packaged 2 ×30mm SiC MESFET transistors were demonstrated with output power higher than 107W with 48.1% PAE,and the gain was 10.3 dB under continuous wave RF *** gate periphery divices of 1mm SiC MESFET exhibited 35 dBm output power with more than 55% PAE,and the gain was 12.3 dB under continuous wave RF operation at 1.5 GHz and 48V drain to source voltage.

关键词： SiC MESFET CW load-pull MESFETs load-pull Output power Gain

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Current Gain Increase by SiNx Passivation in InGaAs/InP Double Heterostructure Bipolar Transistors

Current Gain Increase by SiNx Passivation in InGaAs/InP Doub...

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2015 International Conference on Communication Problem-Solving(ICCP)

作者： Junling Xie Wei Cheng Yuan Wang Bin Niu Long Chang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

Passivation of InGaAs/InP double heterostructure bipolar transistors（DHBTs） with room temperature SiN deposition was investigated. Due to reduction of surface damages during SiN deposition, current gain improvement was observed at low bias voltage region. According to our analysis, a drastic decrease of surface recombination related current component at base-emitter junction occurred after passivation, which is crucial for improving the device reliability.

关键词： InP heterostructure bipolar transistor silicon nitride passivation

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Research and Implementation of 150W SiC Internally Match and Power Combiner at S Band

Research and Implementation of 150W SiC Internally Match and...

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2013 IEEE 5th International Symposium on Microwave,Antenna,Propagation and EMC Technologies for Wireless Communications

作者： Gang Chen Shichang Zhong Yuchao Li Song Bai Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

ISBN: (纸本)9781467360760

As one of the third generation semiconductor materials,SiC has many advantages,such as high-power,high gate-drain breakdown voltage,heat stability and anti-radiation *** it is of high value for study and application *** paper bases on 20mm SiC MESFET which is made by NEDI,through internally match circuit and power combiner technology,designs a power *** power module output power has 150W with the gain is 9dB at S-band 2.8GHz under a pulse condition of 100us pulse width and 10% duty cycle.

关键词： SiC MESFET Internally Match Circuit Power Combiner Power combiners pulse condition power module DUTY CYCLE Superhigh frequency

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0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Process

0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Pr...

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17th China International Forum on Solid State Lighting &2020 International Forum on Wide Bandgap Semiconductors (第十七届中国国际半导体照明论坛暨2020国际第三代半导体论坛)

作者： Wei Huang Suyuan Wang Zhu Liu Junyun Zhang Nianning Huang Xinqiang Wang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D State Key Laboratory of Artificial Micro structure and Mesoscopic Physics School of PhysicsPeking U

ISBN: (数字)9780738111889

ISBN: (纸本)9781665419642

The resolution enhancement lithography assisted by chemical shrink(RELACS)is presented to increase the resolution of the i-line *** have succeeded in developing an advanced i-line lithography process based on i-line stepper lithography and second-RELACS ***,the limit resolution of i-line lithography can be increased from 0.35 μm to 0.1 μm at the first time,and the wafer yield of GaN high electron mobility transistor(HEMT)with 3.1 mm gate width which has an Lg = 0.147 μm is 87.4%.Besides,the second-RELACS process is applied to X-band GaN monolithic microwave integrated circuit power amplifier(MMIC PA),the resist width and gate length are about 0.15 μm and 0.2 μ*** is confirmed that the wafer yield of T gate with 6.8 mm gate width can be as high as 70.2%.Comparing with the results of deep ultra-violet(DUV)lithography,the electrical and radio frequency(RF)characteristics of the GaN HEMTs fabricated with the second-RELACS process are stable.

关键词： Lithography Logic gates Gallium nitride Resists HEMTs Microwave circuits Chemicals

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Design of a RF Doherty Power Amplifier Based on Handset Application 15

Design of a RF Doherty Power Amplifier Based on Handset Appl...

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15th International Conference on Microwave and Millimeter Wave technology, ICMMT 2023

作者： Tang, Yujie Zhou, Yingjie Zhou, Hao Yang, Lei Zheng, Yuan Guo, Yufeng Zhang, Yi College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing210023 China Nanjing GuoBo Electronics Co. Ltd Nanjing210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China State Key Laboratory of Millimeter Waves Nanjing210096 China

ISBN: (纸本)9798350338874

A Doherty Power Amplifier (PA) with high efficiency and high linearity that can be used in smart communication devices such as mobile phones in the sub-6GHz frequency band is proposed. This Doherty PA uses the InGaP/GaAs hetero-junction bipolar transistor (HBT) process. Compared with the traditional Doherty PA, the PA in this paper combines the choke inductance of the output collector and the phase compensation circuit with the output circuit of the Doherty PA respectively, which reduces the number of components required for matching. From the simulation, when the power supply voltage of the Doherty power amplifier is 4.2V, the operating frequency is 3.5GHz and the output power is 26.5dBm, the power added efficiency (PAE) reaches 34.5%, at the same time when using a 10MHz bandwidth LTE-3GPPFDD modulated signal the Adjacent Channel Power Ratio (ACPR) below to -35dBc. © 2023 IEEE.

关键词： Efficiency

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