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检索条件"机构=Science and Technology of Monolithic Integrated and Modules Circuits Key Laboratory"
193 条 记 录,以下是91-100 订阅
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Millimeter wave broadband high sensitivity detectors with zero-bias Schottky diodes
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Journal of Semiconductors 2015年 第6期36卷 105-109页
作者: 姚常飞 周明 罗运生 许从海 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute
Two broadband detectors at W-band and D-band are analyzed and designed with low barrier Schottky diodes. The input circuit of the detectors is realized by low and high impedance microstrip lines, and their output circ... 详细信息
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Frequency stability of InP HBT over 0.2 to 220 GHz
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Journal of Semiconductors 2015年 第2期36卷 77-81页
作者: 周之蒋 任坤 刘军 程伟 陆海燕 孙玲玲 The Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Science and Technology on Monolithic Integrated Circuit and Modules Laboratory Nanjing Electronic Devices Institute
The frequency stabilities of lnP DHBTs in a broadband over 1 to 220 GHz are investigated. A hybrid π-topology small-signal model is used to accurately capture the parasitics of devices. The model parameters are extra... 详细信息
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Design and fabrication of a 3.3 kV 4H-SiC MOSFET
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Journal of Semiconductors 2015年 第9期36卷 54-57页
作者: 黄润华 陶永洪 柏松 陈刚 汪玲 刘奥 卫能 李赟 赵志飞 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China
A 4H-SiC MOSFET with breakdown voltage higher than 3300 V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of the drift layer and DMOSFET cell structu... 详细信息
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A 5.4mW and 6.1% efficiency fixed-tuned 214GHz frequency doubler with Schottky barrier diodes
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High technology Letters 2015年 第1期21卷 85-89页
作者: 姚常飞 Zhou Ming Luo Yunsheng Kou Yanan Li Jiao Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute
A Y-band frequency doubler is analyzed and designed with GaAs planar Schottky diode, which is flip-chip solded into a 50 μm thick quartz substrate. Diode embedding impedance is found by full- wave analysis with lumpe... 详细信息
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Measurement and modeling techniques for InP-based HBT devices to 220GHz
Measurement and modeling techniques for InP-based HBT device...
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IEEE Conference on Electron Devices and Solid-State circuits
作者: Haiyan Lu Wei Cheng Zhijiang Zhou Oupeng Li Bin Niu Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China The Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou China Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu China
In this paper a measurement method for InP-Based HBT devices to 220GHz is presented. S-parameters are de-embedded using TRL calibration structures (70-220GHz) fabricated on-wafer. The results shown in this paper are c... 详细信息
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Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz
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Chinese Physics Letters 2015年 第7期32卷 175-178页
作者: 牛斌 王元 程伟 谢自力 陆海燕 常龙 谢俊领 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093
A common base four-finger InOaAs/InP double heterojunction bipolar transistor with 535 OHz fmax by using the 0.5 μm emitter technology is fabricated. Multi-finger design is used to increase the input current. Common ... 详细信息
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A high linearity X-band SOI CMOS digitally-controlled phase shifter
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Journal of Semiconductors 2015年 第6期36卷 115-122页
作者: 陈亮 陈新宇 张有涛 李智群 杨磊 Nanjing Electronic Devices Institute Guobo Electronics Co.Ltd RF & OE IC Institute Southeast University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory
This paper proposed an X-band 6-bit passive phase shifter (PS) designed in 0.18 μm silicon-on-insulator (SOI) CMOS technology, which solves the key problem of high integration degree, low power, and a small size ... 详细信息
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On-chip integrated inductors with NiFe-SiOx magnetic thin films on GaN  4th
On-chip integrated inductors with NiFe-SiOx magnetic thin fi...
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4th International Conference on Electronics, Communications and Networks, CECNet2014
作者: Kong, Cen Zhou, Jianjun Li, Hui Lu, Haiyan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
Fabrication, characterization, and modeling of on-chip integrated inductors with magnetic thin film (NiFe-SiOX) on sapphire-based GaN substrate was reported. The fabrication processes were compatible with the conventi... 详细信息
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AlGaN/GaN MIS-HEMT with ultrathin barrier using PECVD SiN as passivation and gate-insulating layer  4th
AlGaN/GaN MIS-HEMT with ultrathin barrier using PECVD SiN as...
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4th International Conference on Electronics, Communications and Networks, CECNet2014
作者: Wang, Zheli Zhou, Jianjun Kong, Cen Chen, Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing Jiangsu China
The Twodimensional Electron Gas density (2DEG) and electron mobility (μ) of Al0.3Ga0.7N/GaN heterostructures with a 5-nm-thick barrier increased after the deposition of 10-nm-thick SiN by Plasma Enhanced Chemical Vap... 详细信息
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Fabrication and application of 1.7KV SiC-Schottky diodes
Fabrication and application of 1.7KV SiC-Schottky diodes
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European Conference on Silicon Carbide and Related Materials, ECSCRM 2014
作者: Chen, G. Bai, S. Liu, A. Wang, L. Huang, R.H. Tao, Y.H. Li, Y. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China
High voltage 4H-SiC Ni metal junction barrier schottky (JBS) diode with reverse breakdown voltage of 1700 V and forward current of 5 A has been fabricated. A low reverse leakage current below 3.8×10-5 A/cm2 at th... 详细信息
来源: 评论