检索结果-内蒙古大学图书馆

International Conference on Mechatronics Engineering and Electrical Engineering, CMEEE 2014

作者： Chen, G. Zhang, Q.M. Bai, S. Liu, A. Wang, L. Huang, R.H. Li, D.H. Li, Y.N. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China Jinan Semiconductor Institute Jinan China

ISBN: (纸本)9781138027190

High voltage 4H-SiC Ti schottky Junction Barrier Schottky (JBS) diode with breakdown voltage of 2500 V and forward current of 2 A has been fabricated. A low reverse leakage current below 1.13 × 10-4 A/cm2 at the bias voltage of -2.5 kV has been obtained. The forward on-state current was 2 A at VF = 1.8 V. The chip is 2.3 mm × 2.3 mm and the active-region is 1.5 mm × 1.5 mm. The turn-on voltage is about 0.9 V. The on-state resistance is 6.52 mΩ · cm2. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was packaged with SMB seagull package. The thickness of the N—epilayer is 24 µm, and the doping concentration is 4.0 × 1015 cm-3. A floating guard rings edge termination have been used to improve the effectiveness of the edge termination technique. By using Ti/Ni/Ag multilayer metal structure, the double side Ag process of 4H-SiC JBS diode is formed. We use the PECVD SizNy/SiO2 as the passivation dielectric and a non photosensitive polyamide with 390 °C cured temperature as the passivation in the end. © 2015 Taylor & Francis Group, London.

关键词： Silicon carbide

来源：评论

学校读者我要写书评

暂无评论

InGaAs/InP double heterojunction bipolar transistors with fmax=532GHz

InGaAs/InP double heterojunction bipolar transistors with fm...

引用

IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IEEE MTT-S IMWS-AMP 2015

作者： Wei, Cheng Yuan, Wang Bin, Niu Zi-Li, Xie Jun-Ling, Xie Hai-Yan, Lu Yan, Zhao Yan, Sun Tang-Sheng, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing210093 China

ISBN: (纸本)9781479964505

An InGaAs/InP DHBT with InGaAsP composite collector is designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. The DHBT with emitter area of 0.5×5μm2 exhibits a current cutoff frequency ft=350GHz and a maximum oscillation frequency fmax=532GHz which is to our knowledge the highest BVCEO ever reported for InGaAs/InP DHBTs in China. The breakdown voltage is 4.8V. The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage controlled oscillator (VCO) and mixer applications at THz span. © 2015 IEEE.

关键词： Indium phosphide

来源：评论

学校读者我要写书评

暂无评论

Common base four-finger InGaAs/InP DHBT with 535 GHz fmax

Common base four-finger InGaAs/InP DHBT with 535 GHz fmax

引用

IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IEEE MTT-S IMWS-AMP 2015

作者： Bin, Niu Wei, Cheng Yuan, Wang Zi-Li, Xie Jun-Ling, Xie Hai-Yan, Lu Yan, Sun Tang-Sheng, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing210093 China

ISBN: (纸本)9781479964505

A common base four-finger InGaAs/InP DHBT with 535 GHz fmax using 0.5μm emitter technology is fabricated. Multi-finger design was used to increase input current. Common base configuration was compared with common emitter configuration, and demonstrated a smaller K factor at high frequency span, indicating a larger MSG/MAG breakpoint frequency and thus a higher gain when frequency reaches MAG region of common emitter devices. © 2015 IEEE.

关键词： Indium phosphide

来源：评论

学校读者我要写书评

暂无评论

Current Gain Increase by SiN_x Passivation in InGaAs/InP Double Heterostructure Bipolar Transistors

Current Gain Increase by SiN_x Passivation in InGaAs/InP Dou...

引用

IEEE International Conference on Communication Problem-Solving

作者： Junling Xie Wei Cheng Yuan Wang Bin Niu Long Chang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

ISBN: (纸本)9781467365451

Passivation of InGaAs/InP double heterostructure bipolar transistors (DHBTs) with room temperature SiN_x deposition was investigated. Due to reduction of surface damages during SiN_x deposition, current gain improvement was observed at low bias voltage region. According to our analysis, a drastic decrease of surface recombination related current component at base-emitter junction occurred after passivation, which is crucial for improving the device reliability.

关键词： InP Heterostructure bipolar transistor Silicon nitride Passivation

来源：评论

学校读者我要写书评

暂无评论

100GHz Static Frequency Divider Based On 0.5μm InP/InGaAs DHBT

100GHz Static Frequency Divider Based On 0.5μm InP/InGaAs D...

引用

2015 International Conference on Communication Problem-Solving(ICCP)

作者： Bin Niu Wei Cheng You-Tao Zhang Yuan Wang Hai-Yan Lu Long Chang Jun-Ling Xie Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

A static divide-by-2 frequency divider based on InP/InGaAs DHBT technology is *** chip thin film resistor and capacitor were *** levels of interconnect were *** collector design and 0.5μm emitter width enable the sta... 详细信息

关键词： m InP/InGaAs DHBT InGaAs InP Static Frequency Divider Based On 0.5

来源：评论

学校读者我要写书评

暂无评论

Current Gain Increase by SiNx Passivation in InGaAs/InP Double Heterostructure Bipolar Transistors

Current Gain Increase by SiNx Passivation in InGaAs/InP Doub...

引用

2015 International Conference on Communication Problem-Solving(ICCP)

作者： Junling Xie Wei Cheng Yuan Wang Bin Niu Long Chang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

Passivation of InGaAs/InP double heterostructure bipolar transistors（DHBTs） with room temperature SiN deposition was investigated. Due to reduction of surface damages during SiN deposition, current gain improvement was observed at low bias voltage region. According to our analysis, a drastic decrease of surface recombination related current component at base-emitter junction occurred after passivation, which is crucial for improving the device reliability.

关键词： InP heterostructure bipolar transistor silicon nitride passivation

来源：评论

学校读者我要写书评

暂无评论

Wafer-scale integration of GaAs pHEMT on Silicon by epitaxial layer transfer

Wafer-scale integration of GaAs pHEMT on Silicon by epitaxia...

引用

IEEE Conference on Electron Devices and Solid-State circuits

作者： Li Shu Wu Yan Zhao Gui Xiong Shi Wei Cheng Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

The present work describes the study and improvement of heterogeneous integration based on epitaxial layer transfer technique, which is used to separate III/V device from their substrate and transfer to the other substrate. Our work aims in the development of a new process for integration of GaAs device with Silicon substrate. It is based on low temperature bonding of the epitaxial layer transfer technology with bisbenzocyclobutene (BCB). Using this method, we demonstrate that GaAs pseudomorphic high electron mobility transistor (pHEMT) device on a 3 inch-diameter GaAs wafer is transferred to a Silicon substrate, and evaluate the different thickness of BCB that affect the performance of GaAs pHEMT device.

关键词： Conferences Electron devices Solid state circuits

来源：评论

学校读者我要写书评

暂无评论

AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-μm -Thick Epilayers with the Maximum Off-State Breakdown Voltage of 500 V

引用

Chinese Physics Letters 2014年第3期31卷 129-132页

作者： YU Xin-Xin NI Jin-Yu LI Zhong-Hui KONG Cen ZHOU Jian-Jun DONG Xun PAN Lei KONG Yue-Chan CHEN Tang-Sheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016

We report on the high breakdown performance of AlGaN/GaN high electron mobility transistors （HEMTs） grown on 4-inch silicon substrates. The HEMT structure including three Al-content step-graded AlGaN transition layers has a total thickness of 2.7 μm. The HEMT with a gate width WG of 300 μm acquires a maximum off-state breakdown voltage （BV） of 550 V and a maximum drain current of 527 mA/mm at a gate voltage of 2 V. It is found that BV is improved with the increase of gate-drain distance LGD until it exceeds 8 μm and then BV is tended to saturation. While the maximum drain current drops continuously with the increase of LGD. The HEMT with a WG of 3 mm and a LGD of 8 μm obtains an off-state BV of 500 V. Its maximum leakage current is just 13 μA when the drain voltage is below 400 V. The device exhibits a maximum output current of 1 A with a maximum transconductance of 242 mS.

关键词： HIGH electron mobility transistors RESEARCH SILICON -- Research GALLIUM nitride SEMICONDUCTOR doping PHYSICS research

来源：评论

学校读者我要写书评

暂无评论

Development of 10 kV 4H-SiC JBS diode with FGR termination

引用

Journal of Semiconductors 2014年第7期35卷 56-59页

作者：黄润华陶永洪曹鹏飞汪玲陈刚柏松栗瑞李赟赵志飞 Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

The design, fabrication, and electrical characteristics of the 4H-SiC JBS diode with a breakdown voltage higher than 10 kV are presented. 60 floating guard rings have been used in the fabrication. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The n-type epilayer is 100 μm in thickness with a doping of 6 × 10^14 cm^-3. The on-state voltage was 2.7 V at JF = 13 A/cm^2.

关键词： 4It-SiC JBS diodes edge termination floating guard rings

来源：评论

学校读者我要写书评

暂无评论

An InP DHBT 140 GHz-165 GHz Amplifier

An InP DHBT 140 GHz-165 GHz Amplifier

引用

IEEE International Conference on Communication Problem-Solving

作者： Sun Yan Cheng Wei Li Ou Peng Lu Hai Yan Li Xiao Wang Yuan Niu Bin Scienceand Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China

ISBN: (纸本)9781467365451

We present a compact, 3-stage millimeter-wave monolithic integrated circuit (MMIC) amplifier with an operating frequency of 140-165 GHz, formed by common-emitter configured 0.5 μm InP DHBTs and a multilayer thin-film microstrip (TFM) wiring environment. The amplifier smallsignal gain exhibits >5 dB from 140 GHz-165 GHz. The peak gain is 11 dB at 140 GHz. This is the first time reported InP DHBT MMIC amplifier operating in D-band employing TFM in china. The total size of this 3-stage amplifier is only 1.04 mm×0.88 mm.

关键词： Indium phosphide (InP) Heterojunction bipolar transistors (HBTs) Millimeter-wave monolithic integrated circuit (MMIC) Amplifier D-band Thin-film microstrip (TFM)

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：