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检索条件"机构=Science and Technology of Monolithic Integrated and Modules Circuits Key Laboratory"
193 条 记 录,以下是101-110 订阅
排序:
Study on Fabrication and Fast Switching of High Voltage SiC JFET
Study on Fabrication and Fast Switching of High Voltage SiC ...
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2013 International Conference on Solar Energy Materials and Energy Engineering(SEMEE 2013)
作者: Gang Chen Song Bai Runhua Huang Yonghong Tao Ao Liu Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
SiC devices have excellent properties such as ultra low loss, high withstand voltage, large capacity, high frequency, and high temperature operation compared with Si devices. The SiC JFET is expected to be appropriate... 详细信息
来源: 评论
Application of 1200V-8A SiC JBS diodes in the motor system
Application of 1200V-8A SiC JBS diodes in the motor system
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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013
作者: Liu, Ao Chen, Gang Bai, Song Li, Rui Sun, Wei Feng Nanjing Electronic Device Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China National ASIC System Engineering Research Center Southeast University Nanjing 210096 China
1200V-8A 4H-SiC junction barrier schottky (JBS) diodes were designed and fabricated based on in-house SiC epitaxy and device technology. As a free-wheeling diode for the IGBT in inverter of motor system, the 1200V SiC... 详细信息
来源: 评论
Terahertz 4th-Order Downconversion Mixer Using Symmetric MOS Varactors
Terahertz 4th-Order Downconversion Mixer Using Symmetric MOS...
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Zhao Yingdong Zhang Kai Yang Fei School of Electronic Science & Engineering Southeast University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory
A 4th-order subharmonic downconversion mixer with a radio frequency (RF) of 480 GHz and intermediate frequency (IF) of 20 GHz that employs MOS symmetric varactors (SVARs) is demonstrated in 65-nm CMOS. The mixer achie...
来源: 评论
Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET
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Energy and Power Engineering 2013年 第4期5卷 1284-1287页
作者: Gang Chen Song Bai Yonghong Tao Yun Li 1Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China 2Nanjing Electronic Devices Institute Nanjing China Nanjing Electronic Devices Institute Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China
A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12... 详细信息
来源: 评论
Enhancement-mode Al2O3/InAlGaN/GaN MOS-HEMTs with a record drain current density of 1.7 A/mm and a threshold voltage of +1.5 V
Enhancement-mode Al2O3/InAlGaN/GaN MOS-HEMTs with a record d...
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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
作者: Kai Zhang Jianjun Zhou Cen Kong Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing
The paper reports high performance enhancement-mode MOS-HEMT based on quaternary InAlGaN barrier. A self-aligned gate technology is used for gate recessing, dielectric deposition and gate electrode formation processes... 详细信息
来源: 评论
InAlN/AlN/GaN HEMTs on sapphire substrate
InAlN/AlN/GaN HEMTs on sapphire substrate
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: H. Q. Liu J. J. Zhou X. Dong T. S. Chen C. Chen National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing China
High quality InAlN/AlN/GaN heterostructure is grown by metal organic chemical deposition (MOCVD) on sapphire substrate. A high two-dimensional electron gas (2DEG) density of 2.5×10 13 cm -2 was measured in this... 详细信息
来源: 评论
High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped gate encapsulated with low-κ BCB
High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped ...
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IEEE Conference on Electron Devices and Solid-State circuits
作者: Xinxin Yu Jianjun Zhou Yuechan Kong Daqing Peng Weibo Wang Fangjin Guo Haiyan Lu Wen Wang Cen Kong Zhonghui Li Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
High power performance AlGaN/GaN HEMT devices with 0.1 μm Y-shaped gates encapsulated with low-κ BCB are reported. The maximum drain current and transconductance of the device are 1.15 A/mm and 350 mS/mm, respective... 详细信息
来源: 评论
A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using $.13\mu \text{m SiGe}$ HBT process
A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using...
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IEEE International Wireless Symposium (IWS)
作者: Lu Yuxiang Li Zekun Yu Jiayang Li Huanbo Zhou Peigen Lu Haiyan Chen Jixin State Key Laboratory of Millimeter Wave Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory
A 52.5GHz-66GHz frequency tripler using $0.13\mu\mathrm{m}$ SiGe HBT process is presented, which adopts a single balanced structure, with a high conversion gain up to 14.3dB. A maximum saturated output power $(\mat... 详细信息
来源: 评论
Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusion Bonding for Wafer Level Packaging  21
Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusio...
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21st International Conference on Electronic Packaging technology, ICEPT 2020
作者: Dai, Jiayun Wang, Fei Xu, Lida Zhao, Desheng Han, Ping Chen, Tangshen Nanjing University National Laboratory of Solid State Microstructure China Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Suzhou Institute of Nanotech and Nano-bionics Nano Fabrication Facility Suzhou China
A low temperature fine pitch wafer scale bonding process through Au-In solid liquid inter diffusion bonding is discussed in this paper. 20 µm fine pitch gold and indium miro-bumps with 10 µm diameter are fab... 详细信息
来源: 评论
Developing the Ka-band GaN Power HEMT devices
Developing the Ka-band GaN Power HEMT devices
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2012 5th Global Symposium on Millimeter-Waves(2012年第五届全球毫米波会议 GSMM 2012)
作者: J. J. Zhou X. Dong C. Kong Y. C. Kong C. J. Ren Z. H. Li T. S. Chen C. Chen B. Zhang Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
High quality Al0.3Ga0.7N/GaN/Al0.04Ga0.96N double heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). Two kinds of fabrication technology of Ka band GaN HEMT devices were developed. Using... 详细信息
来源: 评论