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2013 International Conference on Solar Energy Materials and Energy Engineering(SEMEE 2013)

作者： Gang Chen Song Bai Runhua Huang Yonghong Tao Ao Liu Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

SiC devices have excellent properties such as ultra low loss, high withstand voltage, large capacity, high frequency, and high temperature operation compared with Si devices. The SiC JFET is expected to be appropriate for the power device because a JFET has no oxide-semiconductor interface in the channel region and does not use the low mobility SiC MOSFET inversion layer as a channel. Forward I-V up to 4A for SiC VJFET, Gate voltage from 2V to 3.5V by step 0.5V. Reverse Ⅰ-Ⅴ characteristics up to 4500V(VG=-8V) for SiC VJFET, Gate voltage from -4V to -8V by step -2V. Turn-off characteristics are studied and fast turn-off time of 136 ns at room temperature under DC voltage of 600 V is successfully demonstrated.

关键词： SiC JFET Ohmic Trench

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Application of 1200V-8A SiC JBS diodes in the motor system

Application of 1200V-8A SiC JBS diodes in the motor system

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Liu, Ao Chen, Gang Bai, Song Li, Rui Sun, Wei Feng Nanjing Electronic Device Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China National ASIC System Engineering Research Center Southeast University Nanjing 210096 China

1200V-8A 4H-SiC junction barrier schottky (JBS) diodes were designed and fabricated based on in-house SiC epitaxy and device technology. As a free-wheeling diode for the IGBT in inverter of motor system, the 1200V SiC JBS diode was compared to the Si ultra-fast diode from Fairchild Co. Ltd. The SiC diode achieved 88% recovery loss reduction and corresponding IGBT showed 35% lower turn-on loss. So, it will promote the application of motor system in high frequency and high efficiency. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Silicon carbide

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Terahertz 4th-Order Downconversion Mixer Using Symmetric MOS Varactors

Terahertz 4th-Order Downconversion Mixer Using Symmetric MOS...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Zhao Yingdong Zhang Kai Yang Fei School of Electronic Science & Engineering Southeast University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

A 4th-order subharmonic downconversion mixer with a radio frequency (RF) of 480 GHz and intermediate frequency (IF) of 20 GHz that employs MOS symmetric varactors (SVARs) is demonstrated in 65-nm CMOS. The mixer achieves the minimum conversion loss of 25 dB at 20 GHz, VG = 0.5 V and VNW = 1 V. The return loss of the output port can reach nearly 30 dB, achieving a good matching effect, and can operate at a LO power of 9 dBm. The 4-GHz IF bandwidth spans between 18 and 22 GHz.

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Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET

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Energy and Power Engineering 2013年第4期5卷 1284-1287页

作者： Gang Chen Song Bai Yonghong Tao Yun Li 1Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China 2Nanjing Electronic Devices Institute Nanjing China Nanjing Electronic Devices Institute Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12 A (170 W/cm2) with a current gain of ID/IG = 19746 at gate bias VG = 3 V and drain bias VD = 5.5 V. The SiC VJFET device’s related specific on-resistance 54 mΩ·cm2. The BV gain is 250 V with Vg from -10 V to -4 V and is 350 V with Vg from -4 V to -2 V. Self-aligned floating guard rings provide edge termination that blocks 3180V at a gate bias of ?14 V and a drain-current density of 1.53 mA/cm2.

关键词： 4H-SiC VJFET Ohmic Trench Implant

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Enhancement-mode Al2O3/InAlGaN/GaN MOS-HEMTs with a record drain current density of 1.7 A/mm and a threshold voltage of +1.5 V

Enhancement-mode Al2O3/InAlGaN/GaN MOS-HEMTs with a record d...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Kai Zhang Jianjun Zhou Cen Kong Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing

ISBN: (纸本)9781509046140

The paper reports high performance enhancement-mode MOS-HEMT based on quaternary InAlGaN barrier. A self-aligned gate technology is used for gate recessing, dielectric deposition and gate electrode formation processes, where improved digital recessing process as well as O2 plasma-assisted Al 2 O 3 gate dielectric is developed. Fabricated E-mode MOS-HEMT delivers a record output current density of 1.7A/mm with a threshold voltage (V TH ) of 1.5 V, and a small on-resistance (R on ) of 2.0 Q-mm. Excellent V TH hysteresis and greatly improved gate leakage characteristics are also demonstrated.

关键词： Logic gates HEMTs MODFETs Dielectrics Aluminum oxide Threshold voltage Leakage currents

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InAlN/AlN/GaN HEMTs on sapphire substrate

InAlN/AlN/GaN HEMTs on sapphire substrate

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： H. Q. Liu J. J. Zhou X. Dong T. S. Chen C. Chen National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing China

High quality InAlN/AlN/GaN heterostructure is grown by metal organic chemical deposition (MOCVD) on sapphire substrate. A high two-dimensional electron gas (2DEG) density of 2.5×10 13 cm -2 was measured in this structure. To character the electric property of this heterostructure, a 1-μm-long gate InAlN/AlN/GaN high-electron mobility transistors (HEMTs) were fabricated. A maximum output current density of 1.19 A/mm and a peak extrinsic transconductance of 240 mS/mm were measured with the InAlN/AlN/GaN HEMTs. Compare to the normal AlGaN/AlN/GaN HEMTs, the maximum current density and transconductance is greatly improved due to the high 2DEG density and thin barrier layer.

关键词： Gallium nitride HEMTs MODFETs Density measurement Current density Transconductance Organic chemicals MOCVD Electrons Current measurement

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High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped gate encapsulated with low-κ BCB

High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped ...

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IEEE Conference on Electron Devices and Solid-State circuits

作者： Xinxin Yu Jianjun Zhou Yuechan Kong Daqing Peng Weibo Wang Fangjin Guo Haiyan Lu Wen Wang Cen Kong Zhonghui Li Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781509018314

High power performance AlGaN/GaN HEMT devices with 0.1 μm Y-shaped gates encapsulated with low-κ BCB are reported. The maximum drain current and transconductance of the device are 1.15 A/mm and 350 mS/mm, respectively. The two-terminal breakdown voltage exceeds 30 V, which ensures a high operating voltage. Using the novel 0.1 μm low parasitic Y-shaped gate associated with AlGaN back barrier, a f T of 90 GHz and a f max of 170 GHz were obtained for the device. Through measurements of the W-band GaN MMIC PA, ability of 1.55 W/mm output power density was achieved for the device at frequency of 92 GHz. These outstanding performance indicates the devices are suitable for W-band MMIC applications.

关键词： Decision support systems Logic gates Conferences Electron devices Solid state circuits Gain

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A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using $.13\mu \text{m SiGe}$ HBT process

A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using...

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IEEE International Wireless Symposium (IWS)

作者： Lu Yuxiang Li Zekun Yu Jiayang Li Huanbo Zhou Peigen Lu Haiyan Chen Jixin State Key Laboratory of Millimeter Wave Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

ISBN: (数字)9781665481977

ISBN: (纸本)9781665485838

A 52.5GHz-66GHz frequency tripler using $0.13\mu\mathrm{m}$ SiGe HBT process is presented, which adopts a single balanced structure, with a high conversion gain up to 14.3dB. A maximum saturated output power $(\mathrm{P}_{\text{sat}})$ up to 12.3dBm@57GHz is measured, with a 3-dB bandwidth of 13.5GHz (22.7 % relative bandwidth). A folded marchand balun is applied to transform single-end signals into differential ones, with an amplitude difference less than 0.5dB and a phase difference within $180\pm 6$ degrees. A gain enhancing technique is also adopted. The chip size is $620\mu\mathrm{m}\times 200\mu\mathrm{m}$ without pads and $880\mu\mathrm{m}\times520\mu\mathrm{m}$ altogether.

关键词： Harmonics suppression Power measurement Baluns Power amplifiers Bandwidth Frequency conversion Heterojunction bipolar transistors

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Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusion Bonding for Wafer Level Packaging 21

Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusio...

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21st International Conference on Electronic Packaging technology, ICEPT 2020

作者： Dai, Jiayun Wang, Fei Xu, Lida Zhao, Desheng Han, Ping Chen, Tangshen Nanjing University National Laboratory of Solid State Microstructure China Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Suzhou Institute of Nanotech and Nano-bionics Nano Fabrication Facility Suzhou China

ISBN: (纸本)9781728168265

A low temperature fine pitch wafer scale bonding process through Au-In solid liquid inter diffusion bonding is discussed in this paper. 20 µm fine pitch gold and indium miro-bumps with 10 µm diameter are fabricated on two oxidized silicon wafers. Then the wafer bonding process is accomplished at 180 °C with less than 2 µm alignment accuracy. Daisy chains of nearly 2500 interconnects with a fixed contact size of 10×10 µm2 connected successfully. Besides, there is no significant change of the daisy chain resistance after temperature cycling test. An average die shear strength of more than 20 MPa is also achieved. This work shows great potential of Au-In solid liquid inter diffusion bonding for future high density wafer level packaging and heterogeneous integration. © 2020 IEEE.

关键词： Temperature

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Developing the Ka-band GaN Power HEMT devices

Developing the Ka-band GaN Power HEMT devices

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2012 5th Global Symposium on Millimeter-Waves(2012年第五届全球毫米波会议 GSMM 2012)

作者： J. J. Zhou X. Dong C. Kong Y. C. Kong C. J. Ren Z. H. Li T. S. Chen C. Chen B. Zhang Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

High quality Al0.3Ga0.7N/GaN/Al0.04Ga0.96N double heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). Two kinds of fabrication technology of Ka band GaN HEMT devices were developed. Using developed 0.25 urn self-aligned Tshaped gate technology, a 4.5 W/mm output power density and 28％ PAE were obtained in continues wave (CW) mode at 34GHz. To increase the frequency performance of the GaN HEMT devices, a 0.15 μm Yshaped gate technology was developed. By using this technology, the parasitic capacitance is effectively suppressed. The fT and fmax of the GaN HEMT device fabricated with the 0.15 μm Yshaped gate technologies were greatly improved and reached 80GHz and 110GHz, respectively. A 3.1 W/mm output power density and 26.3％ PAE were also obtained in CW mode at 34GHz.

关键词： Ka-band GaN Power HEMT

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