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检索条件"机构=Science and Technology of Monolithic Integrated and Modules Circuits Key Laboratory"
193 条 记 录,以下是101-110 订阅
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Development of 2500V SMB-seagull SiC JBS diodes
Development of 2500V SMB-seagull SiC JBS diodes
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International Conference on Mechatronics Engineering and Electrical Engineering, CMEEE 2014
作者: Chen, G. Zhang, Q.M. Bai, S. Liu, A. Wang, L. Huang, R.H. Li, D.H. Li, Y.N. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China Jinan Semiconductor Institute Jinan China
High voltage 4H-SiC Ti schottky Junction Barrier Schottky (JBS) diode with breakdown voltage of 2500 V and forward current of 2 A has been fabricated. A low reverse leakage current below 1.13 × 10-4 A/cm2 at the ... 详细信息
来源: 评论
InGaAs/InP double heterojunction bipolar transistors with fmax=532GHz
InGaAs/InP double heterojunction bipolar transistors with fm...
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IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IEEE MTT-S IMWS-AMP 2015
作者: Wei, Cheng Yuan, Wang Bin, Niu Zi-Li, Xie Jun-Ling, Xie Hai-Yan, Lu Yan, Zhao Yan, Sun Tang-Sheng, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing210093 China
An InGaAs/InP DHBT with InGaAsP composite collector is designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. The DHBT with emitter area of 0.5×5μm2... 详细信息
来源: 评论
Common base four-finger InGaAs/InP DHBT with 535 GHz fmax
Common base four-finger InGaAs/InP DHBT with 535 GHz fmax
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IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IEEE MTT-S IMWS-AMP 2015
作者: Bin, Niu Wei, Cheng Yuan, Wang Zi-Li, Xie Jun-Ling, Xie Hai-Yan, Lu Yan, Sun Tang-Sheng, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing210093 China
A common base four-finger InGaAs/InP DHBT with 535 GHz fmax using 0.5μm emitter technology is fabricated. Multi-finger design was used to increase input current. Common base configuration was compared with common emi... 详细信息
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Current Gain Increase by SiN_x Passivation in InGaAs/InP Double Heterostructure Bipolar Transistors
Current Gain Increase by SiN_x Passivation in InGaAs/InP Dou...
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IEEE International Conference on Communication Problem-Solving
作者: Junling Xie Wei Cheng Yuan Wang Bin Niu Long Chang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
Passivation of InGaAs/InP double heterostructure bipolar transistors (DHBTs) with room temperature SiN_x deposition was investigated. Due to reduction of surface damages during SiN_x deposition, current gain improveme... 详细信息
来源: 评论
100GHz Static Frequency Divider Based On 0.5μm InP/InGaAs DHBT
100GHz Static Frequency Divider Based On 0.5μm InP/InGaAs D...
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2015 International Conference on Communication Problem-Solving(ICCP)
作者: Bin Niu Wei Cheng You-Tao Zhang Yuan Wang Hai-Yan Lu Long Chang Jun-Ling Xie Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
A static divide-by-2 frequency divider based on InP/InGaAs DHBT technology is *** chip thin film resistor and capacitor were *** levels of interconnect were *** collector design and 0.5μm emitter width enable the sta... 详细信息
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Current Gain Increase by SiNx Passivation in InGaAs/InP Double Heterostructure Bipolar Transistors
Current Gain Increase by SiNx Passivation in InGaAs/InP Doub...
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2015 International Conference on Communication Problem-Solving(ICCP)
作者: Junling Xie Wei Cheng Yuan Wang Bin Niu Long Chang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
Passivation of InGaAs/InP double heterostructure bipolar transistors(DHBTs) with room temperature SiN deposition was investigated. Due to reduction of surface damages during SiN deposition, current gain improvement ... 详细信息
来源: 评论
Wafer-scale integration of GaAs pHEMT on Silicon by epitaxial layer transfer
Wafer-scale integration of GaAs pHEMT on Silicon by epitaxia...
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IEEE Conference on Electron Devices and Solid-State circuits
作者: Li Shu Wu Yan Zhao Gui Xiong Shi Wei Cheng Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
The present work describes the study and improvement of heterogeneous integration based on epitaxial layer transfer technique, which is used to separate III/V device from their substrate and transfer to the other subs... 详细信息
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AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-μm -Thick Epilayers with the Maximum Off-State Breakdown Voltage of 500 V
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Chinese Physics Letters 2014年 第3期31卷 129-132页
作者: YU Xin-Xin NI Jin-Yu LI Zhong-Hui KONG Cen ZHOU Jian-Jun DONG Xun PAN Lei KONG Yue-Chan CHEN Tang-Sheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016
We report on the high breakdown performance of AlGaN/GaN high electron mobility transistors (HEMTs) grown on 4-inch silicon substrates. The HEMT structure including three Al-content step-graded AlGaN transition laye... 详细信息
来源: 评论
Development of 10 kV 4H-SiC JBS diode with FGR termination
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Journal of Semiconductors 2014年 第7期35卷 56-59页
作者: 黄润华 陶永洪 曹鹏飞 汪玲 陈刚 柏松 栗瑞 李赟 赵志飞 Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory
The design, fabrication, and electrical characteristics of the 4H-SiC JBS diode with a breakdown voltage higher than 10 kV are presented. 60 floating guard rings have been used in the fabrication. Numerical simulation... 详细信息
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An InP DHBT 140 GHz-165 GHz Amplifier
An InP DHBT 140 GHz-165 GHz Amplifier
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IEEE International Conference on Communication Problem-Solving
作者: Sun Yan Cheng Wei Li Ou Peng Lu Hai Yan Li Xiao Wang Yuan Niu Bin Scienceand Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China
We present a compact, 3-stage millimeter-wave monolithic integrated circuit (MMIC) amplifier with an operating frequency of 140-165 GHz, formed by common-emitter configured 0.5 μm InP DHBTs and a multilayer thin-film... 详细信息
来源: 评论