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检索条件"机构=Science and Technology of Monolithic Integrated and Modules Circuits Key Laboratory"
共 193 条 记 录，以下是121-130 订阅
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High-Performance Monolayer WS2 Field-effect Transistors on High-κ Dielectrics
High-Performance Monolayer WS2 Field-effect Transistors on H...
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The 6th International Conference on Nanoscience and technology, China 2015 (第六届中国国际纳米科学技术会议)
作者： Yang Cui Run Xin Zhihao Yu Yiming Pan Zhun-Yong Ong Xiaoxu Wei Junzhuan Wang Yun Wu Tangsheng Chen Yi Shi Baigeng Wang Yong-Wei Zhang Gang Zhang Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineeringand School of Physics Nanjing UniversityNanjing 210093P.R.China Institute of High Performance Computing 1 Fusionopolis Way138632Singapore Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D
WS2 is an attractive two-dimensional semiconductor material for electronic and optoelectronic device applications due to its high phonon limited mobility compared to other transition metal *** measured field-effect mo... 详细信息
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Novel extraction method for small-signal equivalent circuit model of HEMTs based on vector fitting
Novel extraction method for small-signal equivalent circuit ...
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2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014
作者： Wu, Yongzhi Ren, Kun Liu, Jun Wei, Cheng Haiyan, Lu Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou310037 China Science and Technology on Monolithic Integrated Circuit and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
A novel model method for III-V HEMTs small-signal model parameter extraction is presented in this work. All the model elements are directly derived from hot S-parameters, rather than cold S-parameters, by using vector... 详细信息
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Transistors: Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS2by Dielectric and Carrier Screening (Adv. Mater. 3/2016)
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Advanced Materials 2016年 第3期28卷
作者： Zhihao Yu Zhun‐Yong Ong Yiming Pan Yang Cui Run Xin Yi Shi Baigeng Wang Yun Wu Tangsheng Chen Yong‐Wei Zhang Gang Zhang Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 P. R. China Institute of High Performance Computing 1 Fusionopolis Way Singapore 138632 Singapore National Laboratory of Solid State Microstructures School of Physics Nanjing University Nanjing 210093 P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing 210016 P. R. China
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The research of heterogeneous integration based on epitaxial layer transfer technology
The research of heterogeneous integration based on epitaxial...
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IEEE Conference on Electron Devices and Solid-State circuits
作者： LiShu Wu Yan Zhao Wei Cheng Zi Qian Huang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
The present work describes the study and improvement of heterogeneous integration based on epitaxial layer transfer technique, which is used to separate III/V device structures from their substrate and transfer to the... 详细信息
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AlGaN/GaN HEMTs on Si(100) substrate
AlGaN/GaN HEMTs on Si(100) substrate
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IEEE Conference on Electron Devices and Solid-State circuits
作者： Yan Zhao Cen Kong Lishu Wu Wei Cheng Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
The Si (100) substrate of AlGaN/GaN HEMTs shows potential of the intimately heterogeneous integration of GaN and Si electronics. It offers new opportunities to increase the functionality and performance of GaN devices... 详细信息
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On-wafer deembeedding techniques with application to HEMT devices characterization
On-wafer deembeedding techniques with application to HEMT de...
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International Conference on Solid-State and integrated Circuit technology
作者： Haiyan Lu Weibo Wang Jianjun Zhou Tangshen Chen Chen Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Device Institute Nanjing China
Two different deembedding methods, including open-short method and open-short-load+c deembedding method are discussed in this paper. These deembedding techniques are used to remove all parasitic elements of the device... 详细信息
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A 0.15µm gate InAlN/GaN HEMT with thin barrier layer
A 0.15µm gate InAlN/GaN HEMT with thin barrier layer
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IEEE Conference on Electron Devices and Solid-State circuits
作者： Jianjun Zhou Xun Dong Haiyn Lu Ceng Kong Yuechan Kong Tangsheng Chen Chen Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China
High quality thin barrier layer In 0.18 Al 0.82 N/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). A 0.15 μm gate InAlN/GaN HEMT was fabricated with 1A/mm drain current at zero gate b... 详细信息
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Research on the diamond MISFET
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Journal of Semiconductors 2013年 第3期34卷 48-50页
作者： 周建军 柏松 孔岑 耿习娇 陆海燕 孔月婵 陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
Based on the hydrogen-terminated surface channel diamond material,a 1μm gate length diamond metal-insulator-semiconductor field-effect transistor(MISFET) was *** gate dielectric Al_2O_3 was formed by naturally oxidat... 详细信息
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A THz InGaAs/InP double heterojunction bipolar transistor with f_(max)=325 GHz and BV_(CBO)=10.6 V
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Journal of Semiconductors 2013年 第5期34卷 76-78页
作者： 程伟 王元 赵岩 陆海燕 高汉超 杨乃彬 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
A common-base four finger InGaAs/InP double heterostructure bipolar transistor （DHBT） has been designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. Th... 详细信息
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A new on-wafer multiline thru-reflect-line (TRL) calibration standard design
A new on-wafer multiline thru-reflect-line (TRL) calibration...
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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)
作者： Haiyan Lu Zhijiang Zhou Chengwei Jianjun Zhou Tangshen Chen Chen Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing CHN Nanjing Electronic Device Institute Nanjing CHN Hangzhou Dianzi University
By using invert microstrip, a new on wafer multiline TRL calibration kits for THz measurement are designed in this paper. Our approach is based on the multi-frequency formulation of the vector network analyzer calibra... 详细信息
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