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International Conference on Solid-State and integrated Circuit technology

作者： Zhijiang Zhou Jun Liu Lingling Sun Wei Cheng Haiyan Lu Science and Technology on Monolithic Integrated Circuit and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China The Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou China

ISBN: (纸本)9781479932849

Extraction and verification of small signal equivalent circuit for InP/InGaAs DHBT up to G-band (140 to 220 GHz) is presented in this paper. Based on Π-topology small-signal model, the model parameters are extracted from measured S-parameters directly. Analytical and approximation approach used in this paper allows reducing numbers of model parameters for low frequency analysis. In order to extend the model to higher frequencies, extrinsic parameters are determined using both analytical and optimization methods. The model is verified by comparing the modeled parameters to measured parameters. The investigation results show that the excellent agreements between the measured and simulated data are obtained in the frequency range of 0.2 to 220 GHz.

关键词： Abstracts Analytical models Calibration Scattering parameters Indium phosphide Microwave FET integrated circuits Microwave integrated circuits

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A millimeter wave 11W GaN MMIC power amplifier

A millimeter wave 11W GaN MMIC power amplifier

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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)

作者： Xuming Yu Wei Hong Weibo Wang Hongqi Tao Chunjiang Ren State Key Laboratory of Millimeter Wave Southeast University Nanjing P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China

ISBN: (纸本)9781479943531

A 11 W high power amplifier for millimeter wave application is reported in this paper. The monolithic three-stage amplifier has been realized using a 0.15 μm T-gate field plated AlGaN/GaN high electron mobility transistors (HEMTs) in a microstrip transmission line technology on 3-inch SiC substrate. Saturated output power of 40.5 dBm and peak power-added-efficiency of 20% were measured at 29 GHz with the pulsed DC supply voltage of 24 V. Across the 28-31 GHz range, the amplifier delivers output power above 39.3 dBm with power added efficiency over 15%.

关键词： Gallium nitride Power amplifiers HEMTs MODFETs MMICs Millimeter wave technology Microwave amplifiers

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A 0.33THz Schottky diode frequency doubler with 8% efficiency and 5.4mW output power

A 0.33THz Schottky diode frequency doubler with 8% efficienc...

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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)

作者： Changfei Yao Ming Zhou Yunsheng Luo Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing Jiangsu China Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute Nanjing Jiangsu China

ISBN: (纸本)9781479943531

A 0.33THz frequency doubler is realized with planar Schottky diodes, and the diode is mounted on 50 μm thick quartz substrate. The complete multiplying circuit is optimized and established in 3-D electromagnetic simulation suite. The doubler is self-bias and fixed-tuned. The highest tested multiplying efficiency is 8% and its corresponding output power is 5.4mW with input power of 68mW at 328GHz. The typical measured efficiency is 6% in frequency band 320-358GHz. To the authors' knowledge, these results are comparable to reported frequency doubler performance around 330GHz with integrated diode technology.

关键词： Schottky diodes Power generation Substrates Microwave circuits Electromagnetic waveguides integrated circuit modeling Gold

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An improved through line de-embedding method with even-odd mode measurement

An improved through line de-embedding method with even-odd m...

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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)

作者： Oupeng Li Wei Cheng Lei Wang Haiyan Lu Ruimin Xu Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China

This paper presents a new S-parameter matrix calculation based de-embedding methodology. In this method, a noval even-odd mode measurement is proposed to correct the error in traditional through line de-embedding methodology. The influence of the asymmetric input and output stub is canceled. A comparison of the different de-embedding methods for active device (0.7 μm InP DHBT) are performed up to 66 GHz, the results showed that the proposed method has good accuracy and suitable for millimeter-wave (mmWave).

关键词： Scattering parameters Silicon compounds Semiconductor device measurement Indium phosphide Periodic structures Transmission line measurements Probes

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An improved AgilentHBT model for InP DHBT

An improved AgilentHBT model for InP DHBT

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Asia-Pacific Conference on Microwave

作者： Oupeng Li Lei Wang Wei Cheng Haiyan Lu Guohua Gu Jian Zhang Ruimin Xu Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China

In this paper, an improved InP/InGaAs DHBT large-signal model based on the AgilentHBT model is reported. The collector current model is modified for the consideration of hetero-junction effect, and especially, a dispersion current item is put forward and incorporated into the equivalent circuit. The proposed model is implemented by the use of symbolically-defined devices (SDD) in ADS software. The excellent fitting results in DC and s-parametmers indicate that the modified model has better accuracy compared to the conventional one.

关键词： Microwave circuits Microwave integrated circuits Microwave transistors Decision support systems Noise measurement Radiofrequency integrated circuits

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W-band InP DHBT MMIC Power Amplifier

W-band InP DHBT MMIC Power Amplifier

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International Conference on Computational Problem-Solving (ICCP)

作者： Guohua Gu Lei Wang Weibo Wang Wei Cheng Yuan Wang Haiyan Lu Oupeng Li Jian Zhang Yong Zhang Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China

ISBN: (纸本)9781479942442

In this paper, a monolithic W-band Power amplifier (PA) is presented by using 1μm InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) technology. The PA is consisted by 2 stages 2×1μm and 3 stages 4×1μm emitter width transistors. The total circuit shows small signal gain is above 15dB from 90GHz to 96GHz, and the simulated saturation output power reaches 18.5dBm@94GHz. The chip area is only 1.61mm×1.03mm. This W-band power amplifier MMIC is now being fabricated in progress on the NEDI compound semiconductor process line.

关键词： Indium phosphide Power amplifiers DH-HEMTs MMICs Heterojunction bipolar transistors integrated circuit modeling

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A large signal SDD model for InP DHBT

A large signal SDD model for InP DHBT

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International Conference on Computational Problem-Solving (ICCP)

作者： Oupeng Li Wei Cheng Lei Wang Haiyan Lu Ruimin Xu Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu P. R. China Science and Technology Monolithic Integrated Circuits Modules Laboratory Nanjing P. R. China

ISBN: (纸本)9781479942442

In this paper, a accuracy large-signal model based on agilentHBT model for InP dou-ble heterojunction bipolar transistors (DHBTs) is implemented as symbolically defined device (SDD) in Agilent ADS. The model accounts for most physical phenomena including the Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC and multi-bias small S parameters for InP DHBTs.

关键词： Mathematical model integrated circuit modeling Indium phosphide Heterojunction bipolar transistors DH-HEMTs Equations Junctions

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Low insertion loss GHz GaN SAW device fabricated on self-standing GaN substrate

Low insertion loss GHz GaN SAW device fabricated on self-sta...

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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)

作者： Jianjun Zhou Liang Li Haiyan Lu Cen Kong Yuechan Kong Tangsheng Chen Chen Chen Xiaoyu Wang Haodong Wu Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China Key Laboratory of Modern Acoustics Nanjing University Nanjing P. R. China

ISBN: (纸本)9781479943531

A GHz SAW device with two face-to-face interdigitated transducers (IDTs) was fabricated on self-standing semi-insulating GaN substrate. Using an advanced e-beam lithographical techniques, the IDTs with 0.5μm wide fingers and spacing have been fabricated on self-standing GaN substrate. On wafer measurement of the S parameters have demonstrated the operation at approximately 2 GHz with 10dB insertion loss.

关键词： Gallium nitride Surface acoustic wave devices Substrates Insertion loss Loss measurement HEMTs MODFETs

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Observation of polarization pinning effect in PZT/AlGaN/GaN heterostructure

Observation of polarization pinning effect in PZT/AlGaN/GaN ...

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IEEE Conference on Electron Devices and Solid-State circuits

作者： Yuechan Kong Jianjun Zhou Tangsheng Chen Wenbo Luo Lanzhong Hao Huizhong Zeng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China State key laboratory of electronic thin films and integrated devices University of Electronics Science and Technology of China Chengdu P. R. China

ISBN: (纸本)9781479923366

PZT/AlGaN/GaN metal-ferroelectric-semiconductor (MFS) heterostructure is fabricated and characterized by C-V measurement. A distinct asymmetric shift of C-V curve is observed that when the up-sweep (from negative to positive) starting voltage increases from -10 V to -18 V, the C-V curve shifts positively with the threshold voltage varying from -2.4 V to 1.1 V, whereas the down-sweep (from positive to negative) C-V curve hardly move with different starting voltage. The field-history dependent polarization effect of ferroelectrics is involved into a self-consistent calculation, by which the nature of the asymmetric C-V curve shift is disclosed to be the polarization pinning effect of the underlying AlGaN layer. The results take an insight into the interface polarization coupling in GaN-based MFS structure for memory device applications.

关键词： Gallium nitride TV Capacitance-voltage characteristics

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W-band high output power Schottky diode doublers with quartz substrate

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Journal of Semiconductors 2013年第12期34卷 77-81页

作者：姚常飞周明罗运生李姣许从海 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute

W-band quartz based high output power fix-tuned doublers are analyzed and designed with planar Schot- tky diodes. Full-wave analysis is carried out to find diode embedding impedances with a lumped port to model the nonlinear junction. Passive networks of the circuit, such as the low pass filter, the E-plane waveguide to strip transitions, input and output matching networks, and passive diode parts are analyzed by using electromagnetic simulators, and the different parts are then combined and optimized together. The exported S-parameters of the doubler circuit are used for multiply efficiency analysis. The highest measured output power is 29.5 mW at 80 GHz and higher than 15 mW in 76-94 GHz. The highest measured efficiency is 11.5% at 92.5 GHz, and the typical value is 6.0% in 70-100 GHz.

关键词： high output power frequency doubler planar Schottky diode efficiency

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