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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)

作者： Cen Kong Hui Li Shuwen Jiang Jianjun Zhou Xiaojian Chen Chen Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing China State Key Laboratory of Electronic Thin-Film and Integrated Devices University of Electronic Science and Technology Chengdu China

A monolithic AlGaN/GaN HEMT voltage controlled oscillator (VCO) using barium strontium titanate (BST) MIM varactor is reported first time. The BST thin film was fabricated by RF magnetron sputtering. The fabrication process is fully compatible with the standard GaN MMIC integrated process. An output power of 17dBm and the phase noise of -75dBc/Hz (at 100kHz) and -110dBc/Hz (at 1MHz) are obtained while the bias of the drain is 8V and BST varactor voltage is 0V. The VCO exhibits 500MHz tunable frequency bandwidth at the central frequency of 6.42GHz while BST varactor voltage changed from 0V to 20V.

关键词： Varactors Gallium nitride HEMTs Voltage-controlled oscillators Microwave oscillators MMICs Phase noise

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Effects of AlN and AlGaN Interlayer on Properties of InAlN/GaN Heterostructures

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Chinese Physics Letters 2010年第3期27卷 251-253页

作者：董逊李忠辉李哲洋周建军李亮李赟张岚许晓军徐轩韩春林 National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016

InAlN/GaN heterojunction structures are grown on two-inch c-face（0001） sapphire substrates by metalorganic chemical vapour deposition. AlN and AlGaN interlayers are intentionally inserted into the structure to improve the electrical properties. The lowest sheet resistance of 359 Ω/sq and the highest room-temperature two-dimensional electron gas （2DEG） mobility of 1051 cm2 V-1s-1 is obtained in the structure with AlN thickness of 1.3 nm. The structure with AlN thickness of 2 nm exhibits the highest 2DEG concentration of 1.84×1013 cm-2. The sample with an AlGaN interlayer gives a smoother surface morphology compared to the one using an AlN interlayer, indicating potential applications of this technique in device fabrication.

关键词： Condensed matter: electrical magnetic and optical Semiconductors Surfaces interfaces and thin films

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The performance of thin barrier InAlN/AlN/GaN MIS HEMT with high dielectric insulators

The performance of thin barrier InAlN/AlN/GaN MIS HEMT with ...

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2010 International Conference on Microwave and Millimeter Wave technology, ICMMT 2010

作者： Zhou, J.J. Dong, X. Liu, H.Q. Chen, T.S. Chen, C. National Key Laboratory of Science technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China

ISBN: (纸本)9781424457052

High quality thin barrier InAlN/AlN/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). The metal-insulator- semiconductor (MIS) structure devices were fabricated with high dielectric constant material barium strontium titanate (BST). The gate leakage current is reduced more than one order of magnitude under 40 V reverse bias, by using the high dielectric constant material. High transconductance 200 mS/mm was obtained with 1um gate length. The influence of the high dielectric BST material on the performance of the MIS structure is also investigated. © 2010 IEEE.

关键词： Strontium titanates

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Simulation of polarization pinning effect in PZT/AlGaN/GaN metal-ferroelectric-semiconductor heterostructure

Simulation of polarization pinning effect in PZT/AlGaN/GaN m...

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2010 International Conference on Microwave and Millimeter Wave technology, ICMMT 2010

作者： Kong, Yuechan Zhou, Jianjun Xue, Fangshi Li, Liang Chen, Chen Luo, Wenbo Zeng, Huizhong Zhu, Jun National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China State Key Lab. of Electronic Thin Films and Integrated Devices University of Electronics Science and Technology of China Chengdu 610054 China

ISBN: (纸本)9781424457052

The influence of ferroelectric polarization on the electrical properties of PZT/AlGaN/GaN metal-ferroelectric-semiconductor (MFS) structure is investigated by capacitance-voltage (C-V) measurements. A distinct unsymmetrical shift of the C-V profile is observed that when swept positively, the C-V curve shifts to the right with increasing the negative starting voltage, while hardly move with different starting positive voltage when swept in the opposite direction. To understand this, a pinning effect model is developed and incorporated into self-consistent calculation, with taking history-dependent electric field effect into account. Owing to the strong polarization of underlying AlGaN layer, the switchable polarization of ferroelectric is initially pinned at -1.55 μC/cm2 and does not change after positive bias operation. When increasing the negative sweeping voltage, the partially switched ferroelectric dipoles are increased, which results in the right-shift of the C-V curves, in agreement with the experiment. © 2010 IEEE.

关键词： Aluminum gallium nitride

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InAlN/AlN/GaN HEMTs on sapphire substrate

InAlN/AlN/GaN HEMTs on sapphire substrate

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： H. Q. Liu J. J. Zhou X. Dong T. S. Chen C. Chen National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing China

High quality InAlN/AlN/GaN heterostructure is grown by metal organic chemical deposition (MOCVD) on sapphire substrate. A high two-dimensional electron gas (2DEG) density of 2.5×10 13 cm -2 was measured in this structure. To character the electric property of this heterostructure, a 1-μm-long gate InAlN/AlN/GaN high-electron mobility transistors (HEMTs) were fabricated. A maximum output current density of 1.19 A/mm and a peak extrinsic transconductance of 240 mS/mm were measured with the InAlN/AlN/GaN HEMTs. Compare to the normal AlGaN/AlN/GaN HEMTs, the maximum current density and transconductance is greatly improved due to the high 2DEG density and thin barrier layer.

关键词： Gallium nitride HEMTs MODFETs Density measurement Current density Transconductance Organic chemicals MOCVD Electrons Current measurement

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The performance of thin barrier InAlN/AlN/GaN MIS HEMT with high Dielectric Insulators

The performance of thin barrier InAlN/AlN/GaN MIS HEMT with ...

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2010 International Conference on Microwave and Millimeter Wave technology(2010国际微波与毫米波技术会议 ICMMT2010)

作者： J. J. Zhou X. D H. Q. Liu T. S. Chen C. Chen National Key Laboratory of Science technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China

ISBN: (纸本)9781424457052

High quality thin barrier InAlN/AIN/GaN heterostnicture was grown by metal-organic chemical vapor deposition (MOCVD). The metaMnsulatorsemiconductor (MIS) structure devices were fabricated with high dielectric constant material barium strontium titanate (BST). The gate leakage current is reduced more than one order of magnitude under 40 V reverse bias, by using the high dielectric constant material. High transcooductance 200 mS/mm was obtained with lum gate length. The influence of the high dielectric BST material on the performance of the MIS structure is also investigated.

关键词： Gallium nitride HEMTs Dielectrics and electrical insulation Dielectric materials Metal-insulator structures High-K gate dielectrics Binary search trees Chemical vapor deposition MOCVD Inorganic materials

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Simulation of Polarization Pinning Effect in PZT/AlGaN/GaN Metal-Ferroelectric-Semiconductor Heterostructure

Simulation of Polarization Pinning Effect in PZT/AlGaN/GaN M...

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2010 International Conference on Microwave and Millimeter Wave technology(2010国际微波与毫米波技术会议 ICMMT2010)

作者： Chen Chen Jianjun Zhou Yuechan Kong Liang Li Fangshi Xue Jun Zhu Wenbo Luo Huizhong Zeng National Key Laboratory of Science and technology on Monolithic Integrated Circuits and Modules Nan State key lab of electronic thin films and integrated devices University of Electronics Science and

The influence of ferroelectric polarization on the electrical properties of PZT/AlGaN/GaN metalferroelectric semiconductor (MFS) structure is investigated by capacitance-voltage (C-V) measurements. A distinct unsymmetrical shift of the C-V profile is observed that when swept positively, the C-V curve shifts to the right with increasing the negative starting voltage, while hardly move with different starting positive voltage when swept in the opposite direction. To understand this, a pinning effect model is developed and incorporated into selfconsistent calculation, with taking history-dependent electric field effect into account. Owing to the strong polarization of underlying AlGaN layer, the switchable polarization of ferroelectric is initially pinned at -1.55 uC/cm2 and does not change after positive bias operation. When increasing the negative sweeping voltage, the partially switched ferroelectric dipoles are increased, which results in the right-shift of the C-V curves, in agreement with the experiment.

关键词： Polarization Aluminum gallium nitride Gallium nitride Ferroelectric materials Capacitance-voltage characteristics Voltage integrated circuit technology Buffer layers Electric variables measurement Performance evaluation

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A compact transition structure integrated with DC feed filter for submillimeter wave application

A compact transition structure integrated with DC feed filte...

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2007 IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications, MAPE 2007

作者： Yuangen, Lin Yong, Zhang Ruimin, Xu Jun, Xie Shuyi, Wang School of Electronic Engineering University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules

ISBN: (纸本)1424410444

A compact transition structure integrated with DC feed low pass filter for submillimeter wave application is designed and simulated. In this structure, the probe transition for suspended microstrip is in longitudinal orientation relative to the waveguide, and a sector suspended microstrip low pass filter is integrated for DC feed circuits, Broad bandwidth with low insert loss (

关键词： Low pass filters

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10 Gb/s GaAs PHEMT high gain preamplifier for optical receivers

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年第12期28卷 1902-1911页

作者： Jiao, Shilong Yang, Xianming Zhao, Liang Li, Hui Chen, Zhenlong Chen, Tangsheng Shao, Kai Ye, Yutang School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China

A high gain cascade connected preamplifier for optical receivers is developed with 0.5 μm GaAs PHEMT technology from the Nanjing Electronic Devices Institute. To begin with, the transimpedance amplifier has a -3 dB bandwidth of 10 GHz, with a small signal gain of around 9 dB. The post-stage distributed amplifier (DA) has a -3 dB bandwidth of close to 20 GHz, with a small signal gain of around 12 dB. As a whole, the cascade preamplifier has a measured small signal gain of 21.3 dB and a transimpedance of 55.3 dBΩ in a 50 n system. With a higher signal-to-noise ratio than that of the TIA and a markedly improved waveform distortion compared with that of the DA, the measured output eye diagram for 10 Gb/s NRZ pseudorandom binary sequence is clear and symmetric.

关键词： Optical receivers

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10 Gb/s GaAs PHEMT current mode transimpedance preamplifier for optical receiver

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年第1期28卷 24-30页

作者： Jiao, Shilong Ye, Yutang Chen, Tangsheng Feng, Ou Jiang, Youquan Fan, Chao Li, Fuxiao School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China

A single power supply common-gate (CG) current mode transimpedance preamplifier (TIA) is developed with a 0.5 μm GaAs PHEMT process. The amplifier has a measured -3 dB bandwidth of 7.5 GHz and a transimpedance gain of 45 dBΩ. Both the input and output voltage standing wave ratios (VSWR) are less than 2 within the bandwidth. The equivalent input noise current spectral density varies from 14.3 to 22 pA/√Hz, with an average value of 17.2 pA/√Hz. Having a timing jitter of 14 ps and eye amplitude of about 138 mV, the measured output eye diagram for 10 Gb/s NRZ pseudorandom binary sequence (PRBS) is clear and satisfactory.

关键词： Optical receivers

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