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检索条件"机构=Science and Technology of Monolithic Integrated and Modules Circuits Key Laboratory"
193 条 记 录,以下是191-200 订阅
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monolithically integrated 850 nm optical receiver front end
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Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics 2007年 第3期27卷 350-355页
作者: Feng, Ou Feng, Zhong Yang, Lijie Jiao, Shilong Jiang, Youquan Chen, Tangsheng Li, Fuxiao Ye, Yutang Nanjing Electronic Devices Institute Nanjing 210016 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China School of Optoelectronic Inf. Uni. of Electronic Science and Technology of China Chengdu 610054 China
An 850 nm monolithically integrated optical receiver front end has been developed with 0.5 μm GaAs PHEMT process, mesa process and interconnected photolithography technology between mesa and plane, which comprises a ... 详细信息
来源: 评论
5Gb/s monolithically integrated GaAs MSM/PHEMT 850nm optical receiver front end
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年 第4期28卷 587-591页
作者: Jiao, Shilong Chen, Tangsheng Qian, Feng Feng, Ou Jiang, Youquan Li, Fuxiao Shao, Kai Ye, Yutang School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Lab. of Monolithic Integrated Circuits and Modules Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China
An 850nm monolithically integrated optical receiver front end is developed with a 0.5μm GaAs PHEMT process, which comprises a metal-semiconductor-metal (MSM) photodetector and a distributed amplifier. The photodetect... 详细信息
来源: 评论
12 Gb/s GaAs PHEMT transimpedance preamplifier for optical receiver
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Tien Tzu Hsueh Pao/Acta Electronica Sinica 2006年 第6期34卷 1156-1158页
作者: Jiao, Shi-Long Feng, Wei Chen, Tang-Sheng Fan, Chao Li, Fu-Xiao Ye, Yu-Tang School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China
A kind of single power supply transimpedance preamplifier (TIA) for optical receiver is developed, using 0.5 μm GaAs PHEMT process. The TIA has a measured -3 dB bandwidth of 9.5 GHz, with transimpedance gain of 43.5&... 详细信息
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