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检索条件"机构=Science and Technology of Monolithic Integrated and Modules Circuits Key Laboratory"
193 条 记 录,以下是191-200 订阅
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Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices
arXiv
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arXiv 2019年
作者: Li, Weisheng Zhou, Jian Cai, Songhua Yu, Zhihao Zhang, Jialin Fang, Nan Li, Taotao Wu, Yun Chen, Tangsheng Xie, Xiaoyu Ma, Haibo Yan, Ke Dai, Ningxuan Wu, Xiangjin Zhao, Huijuan Wang, Zixuan He, Daowei Pan, Lijia Shi, Yi Wang, Peng Chen, Wei Nagashio, Kosuke Duan, Xiangfeng Wang, Xinran National Laboratory of Solid State Microstructures School of Electronic Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210093 China National Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional Materials College of Engineering and Applied Sciences Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210093 China Department of Chemistry National University of Singapore 3 Science Drive 3 117543 Singapore Department of Materials Engineering University of Tokyo Tokyo113-8656 Japan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing210016 China School of Chemistry and Chemical Engineering Nanjing University Nanjing210023 China Department of Chemistry and Biochemistry University of California Los AngelesCA United States
Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-quality, ultrathin high-κ dielectrics t... 详细信息
来源: 评论
高质量GaN薄膜的MOCVD同质外延生长
高质量GaN薄膜的MOCVD同质外延生长
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第十七届全国化合物半导体材料微波器件和光电器件学术会议
作者: Liang Li 李亮 Zhonghui Li 李忠辉 Weike Luo 罗伟科 Xu Dong 董逊 Daqing Peng 彭大青 Dongguo Zhang 张东国 微波毫米波单片集成和模块电路重点实验室 南京电子器件研究所南京210016 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronics Device InstituteNaning210016 China
采用金属有机化学气相沉积(MOCVD)方法,在GaN自支撑衬底上同质外延生长了GaN薄膜,得到高质量的GaN外延薄膜。X射线衍射(XRD)结果显示其(002)面摇摆曲线半高宽小于100弧秒,原子力显微镜(AFM)照片上能看到连续的二维台阶流形貌,其表面租... 详细信息
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Transistors: Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS2by Dielectric and Carrier Screening (Adv. Mater. 3/2016)
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Advanced Materials 2016年 第3期28卷
作者: Zhihao Yu Zhun‐Yong Ong Yiming Pan Yang Cui Run Xin Yi Shi Baigeng Wang Yun Wu Tangsheng Chen Yong‐Wei Zhang Gang Zhang Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 P. R. China Institute of High Performance Computing 1 Fusionopolis Way Singapore 138632 Singapore National Laboratory of Solid State Microstructures School of Physics Nanjing University Nanjing 210093 P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing 210016 P. R. China
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