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Frequency stability of InP HBT over 0.2 to 220 GHz

Journal of Semiconductors 2015年第2期36卷 77-81页

作者：周之蒋任坤刘军程伟陆海燕孙玲玲 The Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Science and Technology on Monolithic Integrated Circuit and Modules Laboratory Nanjing Electronic Devices Institute

The frequency stabilities of lnP DHBTs in a broadband over 1 to 220 GHz are investigated. A hybrid π-topology small-signal model is used to accurately capture the parasitics of devices. The model parameters are extracted from measurements analytically. The investigation results show that the excellent agreement between the measured and simulated data is obtained in the frequency range 200 MHz to 220 GHz. The dominant parameters of the π-topology model, bias conditions and emitter area have significant effects on the stability factor K. The HBT model can be unconditionally stable by reasonable selection of the proper bias condition and the physical layout of the device.

关键词： double heterojunction bipolar transistor （DHBT） small-signal model stability factor

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W-band high output power Schottky diode doublers with quartz substrate

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Journal of Semiconductors 2013年第12期34卷 77-81页

作者：姚常飞周明罗运生李姣许从海 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute

W-band quartz based high output power fix-tuned doublers are analyzed and designed with planar Schot- tky diodes. Full-wave analysis is carried out to find diode embedding impedances with a lumped port to model the nonlinear junction. Passive networks of the circuit, such as the low pass filter, the E-plane waveguide to strip transitions, input and output matching networks, and passive diode parts are analyzed by using electromagnetic simulators, and the different parts are then combined and optimized together. The exported S-parameters of the doubler circuit are used for multiply efficiency analysis. The highest measured output power is 29.5 mW at 80 GHz and higher than 15 mW in 76-94 GHz. The highest measured efficiency is 11.5% at 92.5 GHz, and the typical value is 6.0% in 70-100 GHz.

关键词： high output power frequency doubler planar Schottky diode efficiency

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Design and fabrication of a 3.3 kV 4H-SiC MOSFET

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Journal of Semiconductors 2015年第9期36卷 54-57页

作者：黄润华陶永洪柏松陈刚汪玲刘奥卫能李赟赵志飞 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China

A 4H-SiC MOSFET with breakdown voltage higher than 3300 V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of the drift layer and DMOSFET cell structure of active area. The n-type epilayer is 33μm thick with a doping of 2.5 × 10^15 cm-3. The devices were fabricated with a floating guard ring edge termination. The drain current 1d= 5 A at Vg = 20 V, corresponding to vd = 2.5 v.

关键词： 4H-SiC MOSFET interface state

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Design, fabrication and characterising of 100 W GaN HEMT for Ku-band application

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Journal of Semiconductors 2016年第8期37卷 49-54页

作者：任春江钟世昌李宇超李忠辉孔月婵陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electron Devices InstituteNanjing 210016 China

Ku-band GaN power transistor with output power over 100 W under the pulsed operation mode is pre- sented. A high temperature A1N nucleation together with an Fe doped GaN buffer was introduced for the developed GaN HEMT. The A1GaN/GaN hetero-structure deposited on 3 inch SiC substrate exhibited a 2DEG hall mobility and density of -2100 cm2/（V.s） and 1.0 x 10^13 cm-2, respectively, at room temperature. Dual field plates were introduced to the designed 0.25μm GaN HEMT and the source connected field plate was optimized for minimizing the peak field plate near the drain side of the gate, while maintaining excellent power gain performance for Ku-band application. The load-pull measurement at 14 GHz showed a power density of 5.2 W/mm for the fabricated 400 μm gate periphery GaN HEMT operated at a drain bias of 28 V. A Ku-band internally matched GaN power transistor was developed with two 10.8 mm gate periphery GaN HEMT chips combined. The GaN power transistor exhibited an output power of 102 W at 13.3 GHz and 32 V operating voltage under pulsed operation mode with a pulse width of 100 μs and duty cycle of 10%. The associated power gain and power added efficiency were 9.2 dB and 48%, respectively. To the best of the authors＇ knowledge, the PAE is the highest for Ku-band GaN power transistor with over 100 W output power.

关键词： Ku-band PAE A1GaN/GaN GaN HEMT field plate

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Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode

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Chinese Physics B 2019年第2期28卷 400-405页

作者： Jin-Lan Li Yun Li Ling Wang Yue Xu Feng Yan Ping Han Xiao-Li Ji College of Electronic Science and Engineering Nanjing University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Electronic Devices Institute College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications

In this paper, we investigate the influence of deep level defects on the electrical properties of Ni/4H-SiC Schottky diodes by analyzing device current-voltage(I-V) characteristics and deep-level transient spectra(DLTS). Two Schottky barrier heights(SBHs) with different temperature dependences are found in Ni/4 H-SiC Schottky diode above room temperature. DLTS measurements further reveal that two kinds of defects Z_(1/2) and Ti(c)~a are located near the interface between Ni and SiC with the energy levels of E_C-0.67 eV and E_C-0.16 eV respectively. The latter one as the ionized titanium acceptor residing at cubic Si lattice site is thought to be responsible for the low SBH in the localized region of the diode, and therefore inducing the high reverse leakage current of the diode. The experimental results indicate that the Ti(c)~a defect has a strong influence on the electrical and thermal properties of the 4 H-SiC Schottky diode.

关键词： 4H–SiC Schottky diodes Schottky barrier heights deep defects DLTS

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A novel circuit architecture for fourth subharmonic mixers

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Journal of Semiconductors 2012年第6期33卷 56-60页

作者：姚常飞许从海周明罗运生 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Research Department of Microwave and Millimeter Wave Modules in Aerospace Nanjing Electronic Devices Institute

A circuit topology for high-order subharmonic（SH） mixers is *** phase cancellation of idle frequency components,the SH mixer circuit can eliminate the complicated design procedure of idle frequency ***,the SH mixer circuit can achieve a high port isolation by phase cancellation of the leakage LO, RF and idle frequency *** on the high-order SH mixer architecture,a new Ka-band fourth SH mixer is analyzed and designed,it shows the lowest measured conversion loss of 8.3 dB at 38.4 GHz and the loss is lower than 10.3 dB in 34-39 *** LO-IF,RF-LO,RF-IF port isolation are better than 30.7 dB,22.9dB and 46.5 dB,respectively.

关键词： SH mixers antiparallel diodes conversion loss harmonic balance analysis

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A 5.4mW and 6.1% efficiency fixed-tuned 214GHz frequency doubler with Schottky barrier diodes

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High technology Letters 2015年第1期21卷 85-89页

作者：姚常飞 Zhou Ming Luo Yunsheng Kou Yanan Li Jiao Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute

A Y-band frequency doubler is analyzed and designed with GaAs planar Schottky diode, which is flip-chip solded into a 50 μm thick quartz substrate. Diode embedding impedance is found by full- wave analysis with lumped port to model the nonlinear junction for impedance matching without the need of diode equivalent circuit model. All the matching circuit is designed ＂on-chip＂ and the mul- tiplier is self-biasing. To the doubler, a conversion efficiency of 6.1% and output power of 5.4mW are measured at 214GHz with input power of 88mW, and the typical measured efficiency is 4.5% in 200 - 225 GHz.

关键词： frequency doubler planar schottky diode quartz substrate efficiency

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Effect of NH3 flow on incorporation efficiency of Al composition and reduction of surface donor states in AlGaN grown by MOVPE

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Physica Status Solidi (C) Current Topics in Solid State Physics 2016年第5-6期13卷 214-216页

作者： Gao, Tao Xu, Ruimin Zhang, Dongguo Li, Zhonghui Peng, Daqing Don, Xun Chen, Tangsheng Chengdu611731 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

We have studied the effect of various ammonia (NH3) flow rates on AlGaN film grown on GaN using c-plane sapphire as substrate by metal organic chemical vapour deposition. The influences of NH3 flow on the species diffusion anisotropy of thick AlGaN films were investigated by scanning electron microscopy, atomic force microscopy and high-resolution X-ray diffraction measurements. It is demonstrated that, in addition to the larger NH3 flow, growth of the AlGaN epilayer under the same trimethylaluminum (TMAl) flow condition as others is a critical factor for less micro-cracks. The results of X-ray double crystal diffraction showed that the AlGaN films with larger ammonia flow exhibited lower Al content and smaller (0002) rocking curve width, and while NH3 flow rate reached 23 liter per minute, a (0002) rocking curve width of 295 arcsecond was reached. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

关键词： Metallorganic chemical vapor deposition

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Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz

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Chinese Physics Letters 2015年第7期32卷 175-178页

作者：牛斌王元程伟谢自力陆海燕常龙谢俊领 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093

A common base four-finger InOaAs/InP double heterojunction bipolar transistor with 535 OHz fmax by using the 0.5 μm emitter technology is fabricated. Multi-finger design is used to increase the input current. Common base configuration is compared with common emitter configuration, and shows a smaller K factor at high frequency span, indicating a larger breakpoint frequency of maximum stable gain/maximum available gain （MSG/MAG） and thus a higher gain near the cut-off frequency, which is useful in THz amplifier design.

关键词： InP InGaAs Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz

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A high linearity X-band SOI CMOS digitally-controlled phase shifter

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Journal of Semiconductors 2015年第6期36卷 115-122页

作者：陈亮陈新宇张有涛李智群杨磊 Nanjing Electronic Devices Institute Guobo Electronics Co.Ltd RF & OE IC Institute Southeast University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

This paper proposed an X-band 6-bit passive phase shifter （PS） designed in 0.18 μm silicon-on-insulator （SOI） CMOS technology, which solves the key problem of high integration degree, low power, and a small size T/R module. The switched-topology is employed to achieve broadband and fiat phase shift. The ESD circuit and driver are also integrated in the PS. It covers the frequency band from 7.5 to 10.5 GHz with an EMS phase error less than 7.5%. The input and output VSWRs are less than 2 and the insertion loss （IL） is between 8-14 dB across the 7.5 to 10.5 GHz, with a maximum IL difference of 4 dB. The input 1 dB compression point （IP1dB） is 20 dBm.

关键词： digitally-controlled phase shifter CMOS technology T/R module

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