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Asia-Pacific Conference on Microwave

作者： Zhihao Chen Xinxin Yu Shuman Mao Yu Fu Jianjun Zhou Yuechan Kong Tangsheng Chen Ruimin Xu Bo Yan Yuehang Xu School of Electronic Science and Engineering University of Electronic Science and Technology of China Chengdu China Research Center of Integrated Circuits and Systems Yangtze Delta Region Institute (Huzhou) University of Electronic Science and Technology of China Huzhou China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

The short channel effects (SCEs) are mainly caused by the generated insufficient depletion region under the gate, which can severely reduce the reliability of devices. In this paper, the effects are analyzed by the proposed metal-insulator-semiconductor (MIS) capacitance model and can be suppressed by the applied high-k upper passivation layer (UPL). To verify the proposed model, the hydrogen-terminated diamond MIS field-effect transistors (C-H diamond MISFETs) with a 40-/100-$\mathrm{nm} \,\mathrm{Al}_{2} \mathrm{O}_{3} / \mathrm{HfO}_{2}$ stacked passivation layer were fabricated. Benefiting from the 100 -nm-thick HfO 2 UPL, the SCEs are suppressed and a high on/off ratio of $\sim 1 \times 10^{9}$ is achieved in the C-H diamond MISFET even a low aspect ratio of 7.5 for the first time. A cut-off frequency (${f}_{\mathrm{T}})$ of 6.1GHz and maximum oscillation frequency $\left(f_{\max }\right.$) of 11.1GHz were also obtained. The above results indicate that C-H diamond MISFETs with a high-k UPL in this work are promising in the high reliability and high frequency applications.

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Design of a RF Doherty Power Amplifier Based on Handset Application

Design of a RF Doherty Power Amplifier Based on Handset Appl...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Yujie Tang Yingjie Zhou Hao Zhou Lei Yang Yuan Zheng Yufeng Guo Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

A Doherty Power Amplifier (PA) with high efficiency and high linearity that can be used in smart communication devices such as mobile phones in the sub-6GHz frequency band is proposed. This Doherty PA uses the InGaP/GaAs hetero-junction bipolar transistor (HBT) process. Compared with the traditional Doherty PA, the PA in this paper combines the choke inductance of the output collector and the phase compensation circuit with the output circuit of the Doherty PA respectively, which reduces the number of components required for matching. From the simulation, when the power supply voltage of the Doherty power amplifier is 4.2V, the operating frequency is 3.5GHz and the output power is 26.5dBm, the power added efficiency (PAE) reaches 34.5%, at the same time when using a 10MHz bandwidth LTE-3GPPFDD modulated signal the Adjacent Channel Power Ratio (ACPR) below to -35dBc.

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Blind Calibration Algorithm for Time-interleaved Analog-to-Digital Conversion System

Blind Calibration Algorithm for Time-interleaved Analog-to-D...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Ziqian Jiang Jie Xu Xiaopeng Li Youtao Zhang Changchun Zhang Yufeng Guo Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

This paper presents a blind calibration algorithm for a multi-channel time-interleaved analog-to-digital conversion system implemented in MATLAB/simulink. The behavior level simulation of the calibration system is carried out. The simulation results show that the signal-to-noise ratio (SNR), signal-to-noise-distortion ratio(SNDR), and spurious-free dynamic range (SFDR) of the signal corrected by the calibration system are greatly improved, which lays a solid foundation for the subsequent digital circuit design. Behavioral simulations are presented for a 4-channel 10-bit TI-ADC in order to verify the effectiveness of the proposed method. Using the introduced calibration technique, SFDR increased by 33 dB on average.

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Low surface roughness gaas/si thin-film deposition using three-step growth method in mbe

Low surface roughness gaas/si thin-film deposition using thr...

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Asia-Pacific Conference on Silicon Carbide and Related Materials, APCSCRM 2019

作者： Wei, Wang Ben, Ma Hanchao, Gao Hailong, Yu Zhonghui, Li Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

ISBN: (纸本)9783035736427

Epitaxial GaAs-on-Si is an ideal material system for studying the physics of mismatched heteroepitaxy of a polar semiconductor layer grown on a non-polar substrate like silicon. Understanding and optimization of the initial nucleation of GaAs on silicon is the most crucial step in the success of GaAs/Si heteroepitaxy. Molecular beam epitaxy (MBE) technique has been used to deposit hetero-epitaxial GaAs thin-film on off-angle Si (100) substrate using the three-step growth method. After optimizing the growth parameters of low temperature (LT) buffer layer and high temperature (HT) epilayer, XRD analyses were performed. Characterization results of the GaAs (004) films which were not subjected to annealing, show a full-width half maximum (FWHM) of 760.1 arc sec and a root mean square (RMS) surface roughness of lower than 1 nm for a scanning area of 10 μm × 10 μm. © 2020 Trans Tech Publications Ltd, Switzerland.

关键词： Molecular beam epitaxy

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A Near-Field Focusing Circularly Polarized Radial Line Slot Array Antenna

A Near-Field Focusing Circularly Polarized Radial Line Slot ...

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European Conference on Antennas and Propagation, EuCAP

作者： Liyuan Zhong Shufeng Zheng Hangqi Yang Yanxiang Yi Qi Luo Chao Gu School of Electronic Engineering Xidian University Xi'an China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China School of Physics Engineering and Computer Science University of Hertfordshire Hatfield UK ECIT Institute Queen's University Belfast Belfast UK

This paper presents the implementation of a near-field focusing (NFF) antenna on basis of radial line slot array (RLSA). The proposed NFF-RLSA antenna is derived from the conventional single-layer spiral-patterned RLSA with circular polarizations, and near-field focused radiation characteristics is realized by adjusting the arrangements of radiating slot pairs and hence the amplitude and phase distribution of RLSA aperture. The designed NFF-RLSA antenna is 14.4λ0 in diameter and 0.17λ0 in height, where λ0 donates the wavelength in free space at the operating frequency, namely 10GHz. Simulation results show that the focus spot is 22.5λ0 away from the antenna aperture, while a focusing gain of 31.2dBi is achieved, and the size of focus spot is 2.48λ0 in width and 11.3λ0 in depth of focus, respectively.

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Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates

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Nanotechnology and Precision Engineering 2020年第4期3卷 241-243页

作者： Yongle Qi Denggui Wang Jianjun Zhou Kai Zhang Yuechan Kong Suzhen Wu Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China China Electronics Technology Group Corporation No.58 Research Institute Wuxi 204035China

Commercially available AlGaN/GaN high-electron-mobility transistors(HEMTs)are beginning to enter the public scene froma range of *** on previous studies,commercial GaN-based electronics are expected to be tolerant to different types of irradiation in *** test this assumption,we compared the characteristic electrical curves obtained at different X-ray irradiation doses for GaN HEMT devices manufactured by Infineon and *** p-GaN-based device was found to be more robust with a stable threshold voltage,whereas the threshold voltage of the device with ametal-insulator-semiconductor gatewas found to shift first in the negative and then the positive *** dynamic phenomenon is caused by the releasing and trapping effects of radiation-induced charges in the dielectric layer and at the interface of irradiated *** such,the p-GaNgate-based GaN HEMT provides a promising solution for use as an electric source in space.

关键词： p-GaN gate GaN HEMTs X-ray irradiation Threshold voltage

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Simplified Evaluation on Cooling Performance of Silicon Microfluidic Interposer

Simplified Evaluation on Cooling Performance of Silicon Micr...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Miao Yu Min Huang Jian Zhu Nanjing University School of Electronic Science and Engineering Nanjing Electronic Devices Institute Nanjing China Nanjing Electronic Devices Institute Nanjing China Nanjing University School of Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

simplified evaluation methods for the analysis on the thermal and hydraulic properties of the silicon microfluidic interposer for GaN power device cooling are proposed in this work. The microjet-microchannel hybrid structure and the parallel microchannel structure are analyzed and compared based on the theoretical and empirical equations. It is depicted that water realizes the best cooling performance among the common coolants driven by the identical pressure in the parallel microchannel structure. The convective heat transfer thermal resistance and heat transfer coefficient of the microjet-microchannel hybrid structure exhibit 22.4 % decrease and 2.24 times enhancement in comparison to the parallel microchannel structure on the conditions of the identical pressure and volume flow rate, respectively.

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System Design of Ultra-High Speed Large-Bandwidth CT $\sum\Delta$ Modulator

System Design of Ultra-High Speed Large-Bandwidth CT $\sum\D...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Kun Liu Yaqin Liu Yuhang Zhuang Yufeng Guo Youtao Zhang Xiaopeng Li Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665482271

This paper presents system design of an ultra-high speed continuous-time (CT) Sigma-Delta $(\Sigma\Delta)$ modulator in MATLAB/SIMULINK. With the help of Toolbox, zero-pole analysis and parameter optimization were carried out for the modulator, followed by the behavior-level simulation of the ideal modulator system. Based on this, the non-ideal factors, including: gain-bandwidth (GBW), clock-jitter, RC-tolerance and excess-loop-delay, are modeled and simulated in the modulator system. The simulation results show that the modulator is suitable for a CT $\Sigma\Delta$ ADC with resolution of 7 -bit, sampling frequency of 10GS/s and signal bandwidth is larger than 300MHz, also lay a foundation for the subsequent circuit design.

关键词： Sigma-delta modulation Microwave integrated circuits Frequency modulation Simulation Bandwidth Millimeter wave integrated circuits integrated circuit modeling

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Microfluidic Silicon Interposer for Thermal Management of Gan Device Integration

SSRN

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SSRN 2022年

作者： Yu, Miao Zhang, Hao Huang, Min Zhang, Hongze Zhu, Jian School of Electronic Science and Engineering Nanjing University Nanjing21002 China Nanjing Electronic Devices Institute Nanjing210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China

The cooling capability of the silicon interposers (SIs) with microjet and microchannel cooling for GaN device has been validated by practical implementations and characterized by numerical analysis in this work. A 5.3 mm × 3.5 mm × 0.08 mm GaN power amplifier (PA) with heating power of ~ 100 W integrated on SI is applied to evaluate the cooling performance of both microfluidic cooling configurations. The maximum hotspot power density of the GaN chip achieves 336.0 ~ 340.5 W/mm 2 , and the average chip power density is 539.0 ~ 546.3 W/cm 2 in the experiments. The SI is integrated with the GaN chip and micro-assembled in a test cube. The surface temperature distributions of the GaN chip are measured with different flow rate at 70 ℃ ambient temperature, and the overall thermal resistance with microjet cooling has 7.11 ~ 7.72 % reduction and its heat transfer coefficient (HTC) increases 12.3 ~ 28.3 % comparing to that with microchannel cooling at the pumping power of 0.5 ~ 1.5 W. The material properties of GaN chip and SI are extracted from the measurement results and support the analysis of the thermal and hydraulic properties of both microfluidic SIs numerically. Their cooling performance and efficiency are evaluated and compared based on the performance evaluation criteria (PEC), field synergy number and entropy generation rate. According to the evaluation results, while the PEC of microjet and microchannel SIs increases with the pumping power, the microjet SI can contribute to the enhancement of the synergetic relation between the flow and temperature fields and reduction of total irreversibility in heat transfer process comparing to the microchannel SI in pursuit of low overall thermal resistance. The field synergy number can improve 90.40 % and the argument entropy generation rate can be 0.376 when the overall thermal resistance is 1.35 K/W. © 2022, The Authors. All rights reserved.

关键词： Gallium nitride

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A High-Speed Level Shifter with dVs/dt Noise Immunity Enhancement Structure for 200V monolithic GaN Power IC

A High-Speed Level Shifter with dVs/dt Noise Immunity Enhanc...

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International Symposium on Power Semiconductor Devices and Ics (ISPSD)

作者： Yifei Zheng Qing Yuan Deyuan Song Yutao Ying Jing Zhu Weifeng Sun Long Zhang Sheng Li Denggui Wang Jianjun Zhou Sen Zhang Nailong He National ASIC System Engineering Research Center Southeast University Nanjing China Wuxi Chipown Micro-electronics limited Wuxi China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China Technology development department CSMC Technologies Corporation Wuxi China

monolithic integration has been demonstrated to be an ideal solution to minimize the parasitics in GaN power IC. Nonetheless, the current commercially GaN process for power IC is far less mature and only n-type HEMTs are available. Therefore, it is difficult for high voltage level shifters to achieve high speed. This work implements a level shifter for GaN IC to achieve both small response time and high $\mathrm{d}V_{\mathrm{S}}/\text{dt}$ noise immunity without complicated signal processing circuits, thus delay and conduction loss will be minimized. The proposed circuit was fabricated in a $1\mu\mathrm{m}$ GaN-on-Silicon process and measured results were performed to verify the characteristics.

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