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检索条件"机构=Science and Technology of Monolithic Integrated and Modules Circuits Key Laboratory"
193 条 记 录,以下是21-30 订阅
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Frequency stability of InP HBT over 0.2 to 220 GHz
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Journal of Semiconductors 2015年 第2期36卷 77-81页
作者: 周之蒋 任坤 刘军 程伟 陆海燕 孙玲玲 The Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Science and Technology on Monolithic Integrated Circuit and Modules Laboratory Nanjing Electronic Devices Institute
The frequency stabilities of lnP DHBTs in a broadband over 1 to 220 GHz are investigated. A hybrid π-topology small-signal model is used to accurately capture the parasitics of devices. The model parameters are extra... 详细信息
来源: 评论
W-band high output power Schottky diode doublers with quartz substrate
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Journal of Semiconductors 2013年 第12期34卷 77-81页
作者: 姚常飞 周明 罗运生 李姣 许从海 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute
W-band quartz based high output power fix-tuned doublers are analyzed and designed with planar Schot- tky diodes. Full-wave analysis is carried out to find diode embedding impedances with a lumped port to model the no... 详细信息
来源: 评论
Design and fabrication of a 3.3 kV 4H-SiC MOSFET
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Journal of Semiconductors 2015年 第9期36卷 54-57页
作者: 黄润华 陶永洪 柏松 陈刚 汪玲 刘奥 卫能 李赟 赵志飞 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China
A 4H-SiC MOSFET with breakdown voltage higher than 3300 V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of the drift layer and DMOSFET cell structu... 详细信息
来源: 评论
Design, fabrication and characterising of 100 W GaN HEMT for Ku-band application
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Journal of Semiconductors 2016年 第8期37卷 49-54页
作者: 任春江 钟世昌 李宇超 李忠辉 孔月婵 陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electron Devices InstituteNanjing 210016 China
Ku-band GaN power transistor with output power over 100 W under the pulsed operation mode is pre- sented. A high temperature A1N nucleation together with an Fe doped GaN buffer was introduced for the developed GaN HEM... 详细信息
来源: 评论
Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode
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Chinese Physics B 2019年 第2期28卷 400-405页
作者: Jin-Lan Li Yun Li Ling Wang Yue Xu Feng Yan Ping Han Xiao-Li Ji College of Electronic Science and Engineering Nanjing University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Electronic Devices Institute College of Electronic and Optical Engineering Nanjing University of Posts and Telecommunications
In this paper, we investigate the influence of deep level defects on the electrical properties of Ni/4H-SiC Schottky diodes by analyzing device current-voltage(I-V) characteristics and deep-level transient spectra(DLT... 详细信息
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A novel circuit architecture for fourth subharmonic mixers
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Journal of Semiconductors 2012年 第6期33卷 56-60页
作者: 姚常飞 许从海 周明 罗运生 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Research Department of Microwave and Millimeter Wave Modules in Aerospace Nanjing Electronic Devices Institute
A circuit topology for high-order subharmonic(SH) mixers is *** phase cancellation of idle frequency components,the SH mixer circuit can eliminate the complicated design procedure of idle frequency ***,the SH mixer ... 详细信息
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A 5.4mW and 6.1% efficiency fixed-tuned 214GHz frequency doubler with Schottky barrier diodes
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High technology Letters 2015年 第1期21卷 85-89页
作者: 姚常飞 Zhou Ming Luo Yunsheng Kou Yanan Li Jiao Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute
A Y-band frequency doubler is analyzed and designed with GaAs planar Schottky diode, which is flip-chip solded into a 50 μm thick quartz substrate. Diode embedding impedance is found by full- wave analysis with lumpe... 详细信息
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Effect of NH3 flow on incorporation efficiency of Al composition and reduction of surface donor states in AlGaN grown by MOVPE
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Physica Status Solidi (C) Current Topics in Solid State Physics 2016年 第5-6期13卷 214-216页
作者: Gao, Tao Xu, Ruimin Zhang, Dongguo Li, Zhonghui Peng, Daqing Don, Xun Chen, Tangsheng Chengdu611731 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
We have studied the effect of various ammonia (NH3) flow rates on AlGaN film grown on GaN using c-plane sapphire as substrate by metal organic chemical vapour deposition. The influences of NH3 flow on the species diff... 详细信息
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Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz
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Chinese Physics Letters 2015年 第7期32卷 175-178页
作者: 牛斌 王元 程伟 谢自力 陆海燕 常龙 谢俊领 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093
A common base four-finger InOaAs/InP double heterojunction bipolar transistor with 535 OHz fmax by using the 0.5 μm emitter technology is fabricated. Multi-finger design is used to increase the input current. Common ... 详细信息
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A high linearity X-band SOI CMOS digitally-controlled phase shifter
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Journal of Semiconductors 2015年 第6期36卷 115-122页
作者: 陈亮 陈新宇 张有涛 李智群 杨磊 Nanjing Electronic Devices Institute Guobo Electronics Co.Ltd RF & OE IC Institute Southeast University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory
This paper proposed an X-band 6-bit passive phase shifter (PS) designed in 0.18 μm silicon-on-insulator (SOI) CMOS technology, which solves the key problem of high integration degree, low power, and a small size ... 详细信息
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